JP2013166931A - 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品 - Google Patents

感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品 Download PDF

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JP2013166931A
JP2013166931A JP2013015055A JP2013015055A JP2013166931A JP 2013166931 A JP2013166931 A JP 2013166931A JP 2013015055 A JP2013015055 A JP 2013015055A JP 2013015055 A JP2013015055 A JP 2013015055A JP 2013166931 A JP2013166931 A JP 2013166931A
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group
monomer
copolymer
formula
alkyl
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JP2013166931A5 (https=
Inventor
Owendi Ongayi
オーウェンディ・オンゲイ
James W Thackeray
ジェームズ・ダブリュー．サッカレー
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
JP2013015055A 2012-02-15 2013-01-30 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品 Pending JP2013166931A (ja)

Applications Claiming Priority (2)

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US201261599421P 2012-02-15 2012-02-15
US61/599,421 2012-02-15

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JP2016181710A Division JP6373921B2 (ja) 2012-02-15 2016-09-16 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品

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JP2013166931A true JP2013166931A (ja) 2013-08-29
JP2013166931A5 JP2013166931A5 (https=) 2016-05-19

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JP2013015055A Pending JP2013166931A (ja) 2012-02-15 2013-01-30 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品
JP2016181710A Active JP6373921B2 (ja) 2012-02-15 2016-09-16 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品
JP2018077643A Withdrawn JP2018135529A (ja) 2012-02-15 2018-04-13 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品

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JP2018077643A Withdrawn JP2018135529A (ja) 2012-02-15 2018-04-13 感光性コポリマー、このコポリマーを含むフォトレジスト組成物、およびこれから形成される物品

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US (1) US9182662B2 (https=)
JP (3) JP2013166931A (https=)
KR (1) KR101515453B1 (https=)
CN (1) CN103254346B (https=)
TW (1) TWI567095B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150072365A (ko) * 2013-12-19 2015-06-29 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토애시드-발생 공중합체 및 관련 포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법
JP2015129273A (ja) * 2013-12-19 2015-07-16 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 酸不安定基を有する共重合体、フォトレジスト組成物、塗布基板、および電子デバイス形成方法
WO2015151765A1 (ja) * 2014-03-31 2015-10-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
JP2017031422A (ja) * 2012-06-28 2017-02-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品
US11720022B2 (en) 2019-02-12 2023-08-08 Samsung Electronics Co., Ltd. Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same

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US9182662B2 (en) * 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom
US9703200B2 (en) * 2013-12-31 2017-07-11 Rohm And Haas Electronic Materials Llc Photolithographic methods
KR102325949B1 (ko) * 2014-11-27 2021-11-12 삼성전자주식회사 포토레지스트용 고분자, 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
JP6782569B2 (ja) * 2016-06-28 2020-11-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP6735171B2 (ja) * 2016-07-22 2020-08-05 東京応化工業株式会社 高分子化合物の製造方法
JP6789024B2 (ja) * 2016-07-22 2020-11-25 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法、並びに、高分子化合物
JP2024031844A (ja) * 2022-08-23 2024-03-07 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR20240043584A (ko) * 2022-09-27 2024-04-03 에스케이하이닉스 주식회사 반도체 소자 제조 방법

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017031422A (ja) * 2012-06-28 2017-02-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ポリマー組成物、このポリマー組成物を含むフォトレジスト、およびこのフォトレジストを含むコーティングされた物品
KR20150072365A (ko) * 2013-12-19 2015-06-29 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토애시드-발생 공중합체 및 관련 포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법
JP2015129273A (ja) * 2013-12-19 2015-07-16 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 酸不安定基を有する共重合体、フォトレジスト組成物、塗布基板、および電子デバイス形成方法
KR101704477B1 (ko) 2013-12-19 2017-02-08 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토애시드-발생 공중합체 및 관련 포토레지스트 조성물, 코팅된 기판, 및 전자 디바이스의 형성 방법
JP2017197764A (ja) * 2013-12-19 2017-11-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 酸不安定基を有する共重合体、フォトレジスト組成物、塗布基板、および電子デバイス形成方法
WO2015151765A1 (ja) * 2014-03-31 2015-10-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
JP2015197509A (ja) * 2014-03-31 2015-11-09 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物の製造方法及び感活性光線性又は感放射線性樹脂組成物
US11720022B2 (en) 2019-02-12 2023-08-08 Samsung Electronics Co., Ltd. Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same

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JP2017039937A (ja) 2017-02-23
US20130209934A1 (en) 2013-08-15
KR101515453B1 (ko) 2015-04-29
JP2018135529A (ja) 2018-08-30
KR20130094247A (ko) 2013-08-23
CN103254346A (zh) 2013-08-21
US9182662B2 (en) 2015-11-10
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