JP2013150000A5 - - Google Patents

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Publication number
JP2013150000A5
JP2013150000A5 JP2013062296A JP2013062296A JP2013150000A5 JP 2013150000 A5 JP2013150000 A5 JP 2013150000A5 JP 2013062296 A JP2013062296 A JP 2013062296A JP 2013062296 A JP2013062296 A JP 2013062296A JP 2013150000 A5 JP2013150000 A5 JP 2013150000A5
Authority
JP
Japan
Prior art keywords
region
contact
insulating film
emitter
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013062296A
Other languages
English (en)
Japanese (ja)
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JP2013150000A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2013062296A priority Critical patent/JP2013150000A/ja
Priority claimed from JP2013062296A external-priority patent/JP2013150000A/ja
Publication of JP2013150000A publication Critical patent/JP2013150000A/ja
Publication of JP2013150000A5 publication Critical patent/JP2013150000A5/ja
Pending legal-status Critical Current

Links

JP2013062296A 2013-03-25 2013-03-25 Ｉｇｂｔ Pending JP2013150000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013062296A JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013062296A JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011052100A Division JP5568036B2 (ja) 2011-03-09 2011-03-09 Ｉｇｂｔ

Publications (2)

Publication Number Publication Date
JP2013150000A JP2013150000A (ja) 2013-08-01
JP2013150000A5 true JP2013150000A5 (enExample) 2014-07-24

Family

ID=49047137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013062296A Pending JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Country Status (1)

Country Link
JP (1) JP2013150000A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
US10529839B2 (en) 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
JP6192686B2 (ja) * 2015-07-02 2017-09-06 株式会社豊田中央研究所 半導体装置
JP2017037921A (ja) 2015-08-07 2017-02-16 トヨタ自動車株式会社 Ｉｇｂｔ
CN109075199B (zh) 2016-10-17 2021-08-31 富士电机株式会社 半导体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105579A (ja) * 1987-10-19 1989-04-24 Fujitsu Ltd 絶縁ゲート型バイポーラトランジスタ
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
JP2002158355A (ja) * 2000-11-20 2002-05-31 Nec Kansai Ltd 半導体装置およびその製造方法
JP2006120789A (ja) * 2004-10-20 2006-05-11 Toshiba Corp 半導体装置
JP5383009B2 (ja) * 2007-07-17 2014-01-08 三菱電機株式会社 半導体装置の設計方法
US8222108B2 (en) * 2009-07-08 2012-07-17 Force Mos Technology Co., Ltd. Method of making a trench MOSFET having improved avalanche capability using three masks process

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