JP2013150000A - Ｉｇｂｔ - Google Patents

Ｉｇｂｔ Download PDF

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Publication number
JP2013150000A
JP2013150000A JP2013062296A JP2013062296A JP2013150000A JP 2013150000 A JP2013150000 A JP 2013150000A JP 2013062296 A JP2013062296 A JP 2013062296A JP 2013062296 A JP2013062296 A JP 2013062296A JP 2013150000 A JP2013150000 A JP 2013150000A
Authority
JP
Japan
Prior art keywords
region
contact
trench
emitter
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013062296A
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English (en)
Japanese (ja)
Other versions
JP2013150000A5 (enExample
Inventor
Jun Saito
順 斎藤
Satoru Machida
悟 町田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Toyota Central R&D Labs Inc
Original Assignee
Toyota Motor Corp
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp, Toyota Central R&D Labs Inc filed Critical Toyota Motor Corp
Priority to JP2013062296A priority Critical patent/JP2013150000A/ja
Publication of JP2013150000A publication Critical patent/JP2013150000A/ja
Publication of JP2013150000A5 publication Critical patent/JP2013150000A5/ja
Pending legal-status Critical Current

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013062296A 2013-03-25 2013-03-25 Ｉｇｂｔ Pending JP2013150000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013062296A JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013062296A JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2011052100A Division JP5568036B2 (ja) 2011-03-09 2011-03-09 Ｉｇｂｔ

Publications (2)

Publication Number Publication Date
JP2013150000A true JP2013150000A (ja) 2013-08-01
JP2013150000A5 JP2013150000A5 (enExample) 2014-07-24

Family

ID=49047137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013062296A Pending JP2013150000A (ja) 2013-03-25 2013-03-25 Ｉｇｂｔ

Country Status (1)

Country Link
JP (1) JP2013150000A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
JP2017017222A (ja) * 2015-07-02 2017-01-19 株式会社豊田中央研究所 半導体装置
DE102016113455A1 (de) 2015-08-07 2017-02-09 Toyota Jidosha Kabushiki Kaisha Igbt
US10529839B2 (en) 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
US10741547B2 (en) 2016-10-17 2020-08-11 Fuji Electric Co., Ltd. Semiconductor device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105579A (ja) * 1987-10-19 1989-04-24 Fujitsu Ltd 絶縁ゲート型バイポーラトランジスタ
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
JP2002158355A (ja) * 2000-11-20 2002-05-31 Nec Kansai Ltd 半導体装置およびその製造方法
JP2006120789A (ja) * 2004-10-20 2006-05-11 Toshiba Corp 半導体装置
JP2009026797A (ja) * 2007-07-17 2009-02-05 Mitsubishi Electric Corp 半導体装置
US20110008939A1 (en) * 2009-07-08 2011-01-13 Force Mos Technology Co. Ltd. Method of making a trench MOSFET having improved avalanche capability using three masks process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105579A (ja) * 1987-10-19 1989-04-24 Fujitsu Ltd 絶縁ゲート型バイポーラトランジスタ
JPH11345969A (ja) * 1998-06-01 1999-12-14 Toshiba Corp 電力用半導体装置
JP2002158355A (ja) * 2000-11-20 2002-05-31 Nec Kansai Ltd 半導体装置およびその製造方法
JP2006120789A (ja) * 2004-10-20 2006-05-11 Toshiba Corp 半導体装置
JP2009026797A (ja) * 2007-07-17 2009-02-05 Mitsubishi Electric Corp 半導体装置
US20110008939A1 (en) * 2009-07-08 2011-01-13 Force Mos Technology Co. Ltd. Method of making a trench MOSFET having improved avalanche capability using three masks process

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016096307A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置
US9437720B2 (en) 2014-11-17 2016-09-06 Toyota Jidosha Kabushiki Kaisha Semiconductor device
US10529839B2 (en) 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
JP2017017222A (ja) * 2015-07-02 2017-01-19 株式会社豊田中央研究所 半導体装置
US9595603B2 (en) 2015-07-02 2017-03-14 Toyota Jidosha Kabushiki Kaisha Semiconductor device
DE102016113455A1 (de) 2015-08-07 2017-02-09 Toyota Jidosha Kabushiki Kaisha Igbt
US10741547B2 (en) 2016-10-17 2020-08-11 Fuji Electric Co., Ltd. Semiconductor device

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