JP2013149694A - 電荷蓄積型メモリ装置 - Google Patents
電荷蓄積型メモリ装置 Download PDFInfo
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- JP2013149694A JP2013149694A JP2012007608A JP2012007608A JP2013149694A JP 2013149694 A JP2013149694 A JP 2013149694A JP 2012007608 A JP2012007608 A JP 2012007608A JP 2012007608 A JP2012007608 A JP 2012007608A JP 2013149694 A JP2013149694 A JP 2013149694A
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- 238000003860 storage Methods 0.000 title claims abstract description 111
- 239000004065 semiconductor Substances 0.000 claims abstract description 108
- 230000000903 blocking effect Effects 0.000 claims abstract description 67
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims abstract description 14
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 13
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 10
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 9
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 abstract description 25
- 230000004888 barrier function Effects 0.000 abstract description 10
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- 238000000034 method Methods 0.000 description 26
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 20
- 239000012535 impurity Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 12
- 229910007541 Zn O Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 125000005843 halogen group Chemical group 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- -1 microscopically Chemical compound 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】コントロールゲート104に窒化インジウム、窒化亜鉛等の仕事関数が5.4電子ボルト以上6.5電子ボルト以下の高仕事関数化合物半導体を用いる。その結果、コントロールゲート104と接するブロッキング絶縁膜106とのバリヤが高く広くなり、電荷蓄積層103への電荷の注入・引き出しにおいて、電荷蓄積層103とコントロールゲート104の間の電荷の移動を抑制できる。また、ブロッキング絶縁膜106をより薄くできるので、電荷の注入・引き出しに必要な電圧を下げることができる。
【選択図】図1
Description
図5(A)に、本実施の形態の電荷蓄積型メモリ装置の例を図示する。ここでは、トランジスタのチャネル方向の断面模式図を示す。トランジスタはp型の単結晶珪素の半導体領域101上に電荷蓄積層103と半導体領域101との間に適切な厚さのトンネル絶縁膜105を有する。
図6(A)に、本実施の形態の電荷蓄積型メモリ装置の例を図示する。なお、一部の記載については実施の形態1を参酌できる。ここでは、トランジスタのチャネル方向の断面模式図を示す。トランジスタはn型の単結晶珪素の半導体領域201上に電荷蓄積層203と、半導体領域201と電荷蓄積層203との間に適切な厚さのトンネル絶縁膜205を有する。
図6(B)と図6(C)の特徴を併せ持つ電荷蓄積型メモリ装置の作製方法の例について図7を用いて簡単に説明する。なお、多くの工程は公知の半導体技術を用いればよいので詳細はそれらを参照できる。
102 不純物領域
102a ソース
102b ドレイン
103 電荷蓄積層
104 コントロールゲート
104a コントロールゲートの第1導電層
104b コントロールゲートの第2導電層
105 トンネル絶縁膜
106 ブロッキング絶縁膜
107 n型領域
108a ハロー領域
108b ハロー領域
111 半導体領域
113 電荷蓄積層
114 コントロールゲート
115 トンネル絶縁膜
116 ブロッキング絶縁膜
201 半導体領域
202a ソース
202b ドレイン
203 電荷蓄積層
203a 窒化珪素膜
204 コントロールゲート
204a コントロールゲートの第1導電層
204b コントロールゲートの第2導電層
205 トンネル絶縁膜
205a 絶縁膜
206 ブロッキング絶縁膜
206a 絶縁膜
207 弱いn型領域
208 n型領域
209a 側壁
209b 側壁
Claims (9)
- ブロッキング絶縁膜とそれに接するコントロールゲートを有し、前記コントロールゲートが、インジウムあるいは亜鉛の少なくとも一つと窒素とを有する仕事関数が5.4電子ボルト以上6.5電子ボルト以下のn型半導体を有することを特徴とする電荷蓄積型メモリ装置。
- 前記コントロールゲートが前記n型半導体よりなる層と、他の材料よりなる層とを有することを特徴とする請求項1に記載の電荷蓄積型メモリ装置。
- 前記ブロッキング絶縁膜が電荷蓄積層に接することを特徴とする請求項1または2のいずれかに記載の電荷蓄積型メモリ装置。
- 前記電荷蓄積層が窒化珪素であることを特徴とする請求項3に記載の電荷蓄積型メモリ装置。
- 前記n型半導体のキャリア濃度は1×1019cm−3以上であることを特徴とする請求項1乃至請求項4のいずれか一に記載の電荷蓄積型メモリ装置。
- 前記ブロッキング絶縁膜は、前記n型半導体とその電子親和力との差が1.8電子ボルト以上であり、また、その差が、前記ブロッキング絶縁膜の電子親和力の2倍以下であることを特徴とする請求項1乃至請求項5のいずれか一に記載の電荷蓄積型メモリ装置。
- 前記ブロッキング絶縁膜は、酸化ジルコニウム、酸化ハフニウム、酸化イットリウム、酸化ランタン、酸化ガリウム、酸化ガリウムアルミニウム、珪酸ジルコニウム、珪酸ハフニウム、窒化アルミニウム、窒化ガリウムアルミニウムのいずれか一であること特徴とする請求項1乃至請求項6のいずれか一に記載の電荷蓄積型メモリ装置。
- 前記n型半導体は、窒化インジウムあるいは窒化亜鉛のいずれか一であること特徴とする請求項1乃至請求項7のいずれか一に記載の電荷蓄積型メモリ装置。
- 前記ブロッキング絶縁膜の酸化珪素換算の厚さが0.2nm乃至4nmであること特徴とする請求項1乃至請求項8のいずれか一に記載の電荷蓄積型メモリ装置。
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JP2019024087A (ja) * | 2017-07-21 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、記憶装置、及び電子機器 |
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JP2010010349A (ja) * | 2008-06-26 | 2010-01-14 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2010093070A (ja) * | 2008-10-08 | 2010-04-22 | Canon Inc | 電界効果型トランジスタ及びその製造方法 |
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JP2019024087A (ja) * | 2017-07-21 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、記憶装置、及び電子機器 |
JP7224124B2 (ja) | 2017-07-21 | 2023-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、記憶装置、及び電子機器 |
US11678490B2 (en) | 2017-07-21 | 2023-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
US11985828B2 (en) | 2017-07-21 | 2024-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
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