JP2013143523A - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】炭化珪素層を加熱しつつ炭化珪素と化学反応し得るプロセスガスを炭化珪素層へ供給することによって、炭化珪素層に対する熱エッチングが行われる。この熱エッチングにより炭化珪素層上に炭素膜50が形成される。炭素膜50から炭化珪素層中へ炭素が拡散するように炭化珪素層が熱処理される。
【選択図】図6
Description
図1に示すように、本実施の形態の炭化珪素半導体装置は、バイポーラ型半導体装置の一種であるトレンチゲート型のIGBT90(Insulated Gate Bipolar Transistor)である。IGBT90は、p型を有する基板31と、基板31の主表面(図中、上面)上にエピタキシャルに形成された炭化珪素層82とを有する。基板31は、結晶型が六方晶の炭化珪素または結晶型が立方晶の炭化珪素からなる。これに対応して、基板31上にエピタキシャルに形成されている炭化珪素層82も、結晶型が六方晶の炭化珪素あるいは結晶型が立方晶の炭化珪素からなる。またIGBT90はさらに、ゲート絶縁膜8と、ゲート電極9と、層間絶縁膜10と、エミッタ電極42と、エミッタ配線層43と、コレクタ電極44と、保護電極15とを有する。
図2に示すように、基板31上に炭化珪素層80が形成される。具体的には、p型の基板31上にまずp型のバッファ層36がエピタキシャルに形成され、バッファ層36上にn型のドリフト層32がエピタキシャルに形成される。炭化珪素層80の形成方法としては、たとえば化学気相成長法(CVD法)を用いることができる。CVD法における原料ガスとしてはシラン(SiH4)およびプロパン(C3H8)の混合ガスを用いることができる。また原料ガスのキャリアガスとして、たとえば水素ガス(H2)を用いることができる。またp型を付与するための不純物としては、たとえばアルミニウム(Al)を用いることができる。またn型を付与するための不純物としては、たとえば窒素(N)またはリン(P)を用いることができる。
次に炭化珪素層81の熱処理が行われる。この熱処理によって、炭素膜50から炭化珪素層81中へ炭素原子が拡散する。拡散した炭素原子の一部は、炭化珪素層81中の炭素空孔と結合し、この結果、炭素空孔の一部が消滅する。これにより炭素空孔密度が低減する。
本実施の形態のIGBT90の製造方法によれば、炭化珪素層80(図4)に対する熱エッチングの際に、熱エッチングによって侵食される面上に炭素膜50(図5)が形成される。また熱エッチングの際の熱処理によって、炭素膜50から炭化珪素層80(図4)中へ炭素原子が拡散し、この炭素原子が炭化珪素層80(図4)中の炭素空孔と結合する。これにより炭化珪素層80が、より少ない炭素空孔密度を有する炭化珪素層81(図5)に変化する。よってより高品質の炭化珪素層を有するIGBT90(図1)が得られる。また同時にこの熱エッチングによって、ゲート電極9を配置するためのトレンチ6を形成することができる。
図14に示すように、本実施の形態の炭化珪素半導体装置は、バイポーラ型半導体装置の一種であるプレーナ型のIGBT190である。IGBT190は、p型を有する基板131と、基板131の主表面(図中、上面)上にエピタキシャルに形成された炭化珪素層182とを有する。基板131は、結晶型が六方晶の炭化珪素または結晶型が立方晶の炭化珪素からなる。これに対応して、基板131上にエピタキシャルに形成されている炭化珪素層182も、結晶型が六方晶の炭化珪素または結晶型が立方晶の炭化珪素からなる。またIGBT190はさらに、ゲート絶縁膜108と、ゲート電極109と、層間絶縁膜110と、エミッタ電極142と、エミッタ配線層143と、コレクタ電極144と、保護電極115とを有する。
図15に示すように、基板131上に炭化珪素層180が形成される。具体的には、p型の基板131上にまずp型のバッファ層136がエピタキシャルに形成され、バッファ層136上にn型のドリフト層132がエピタキシャルに形成される。炭化珪素層180の形成方法としては、たとえば化学気相成長法(CVD法)を用いることができる。CVD法における原料ガスとしてはシラン(SiH4)とプロパン(C3H8)の混合ガスを用いることができる。また原料ガスのキャリアガスとして、たとえば水素ガス(H2)を用いることができる。またp型を付与するための不純物としては、たとえばアルミニウム(Al)を用いることができる。またn型を付与するための不純物としては、たとえば窒素(N)またはリン(P)を用いることができる。
本実施の形態のIGBT190の製造方法によれば、炭化珪素層180(図16)に対する熱エッチングの際に、熱エッチングによって侵食される面上に炭素膜150(図17)が形成される。また熱エッチングの際の熱処理によって、炭素膜150から炭化珪素層180(図16)中へ炭素原子が拡散し、この炭素原子が炭化珪素層180(図16)中の炭素空孔と結合する。これにより炭化珪素層180が、より少ない炭素空孔密度を有する炭化珪素層181(図17)に変化する。よってより高品質の炭化珪素層を有するIGBT190(図14)が得られる。
Claims (9)
- 炭化珪素層を加熱しつつ炭化珪素と化学反応し得るプロセスガスを前記炭化珪素層へ供給することによって、前記炭化珪素層に対する熱エッチングを行う工程を備え、前記熱エッチングを行う工程により前記炭化珪素層上に炭素膜が形成され、さらに
前記炭素膜から前記炭化珪素層中へ炭素が拡散するように前記炭化珪素層を熱処理する工程を備える、炭化珪素半導体装置の製造方法。 - 前記炭化珪素半導体装置はバイポーラ型半導体装置を含む、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素層を熱処理する工程は、前記熱エッチングを行う工程において前記炭化珪素層が加熱される温度よりも高い温度によって行われる、請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記プロセスガスは、塩素原子を含むエッチングガスを含む、請求項1〜3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記プロセスガスは、酸素原子を含む酸化ガスを含む、請求項1〜4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記熱エッチングを行う工程は、前記プロセスガス中の前記酸化ガスの濃度を低下させる工程を含む、請求項5に記載の炭化珪素半導体装置の製造方法。
- 前記熱処理する工程の後に、残存した前記炭素膜を除去する工程をさらに備える、請求項1〜6のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記熱エッチングを行う工程は、前記炭化珪素層上にトレンチを形成するように行われる、請求項1〜7のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記トレンチ内にゲート電極を形成する工程をさらに備える、請求項8に記載の炭化珪素半導体装置の製造方法。
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WO2015019731A1 (ja) * | 2013-08-07 | 2015-02-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
WO2015025632A1 (ja) * | 2013-08-21 | 2015-02-26 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2018166196A (ja) * | 2017-03-28 | 2018-10-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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EP2750198A4 (en) | 2011-08-26 | 2015-04-15 | Nat Univ Corp Nara Inst | SiC SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
JP2015176995A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社東芝 | 半導体装置およびその製造方法 |
WO2015151413A1 (ja) * | 2014-03-31 | 2015-10-08 | 東洋炭素株式会社 | SiC基板の表面処理方法、SiC基板、及び半導体の製造方法 |
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WO2015019731A1 (ja) * | 2013-08-07 | 2015-02-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
JP2015032813A (ja) * | 2013-08-07 | 2015-02-16 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
WO2015025632A1 (ja) * | 2013-08-21 | 2015-02-26 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
US9647081B2 (en) | 2013-08-21 | 2017-05-09 | Sumitomo Electric Industries, Ltd. | Method for manufacturing silicon carbide semiconductor device |
JP2018166196A (ja) * | 2017-03-28 | 2018-10-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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