JP2013125890A - 光電変換素子およびその製造方法 - Google Patents
光電変換素子およびその製造方法 Download PDFInfo
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- JP2013125890A JP2013125890A JP2011274354A JP2011274354A JP2013125890A JP 2013125890 A JP2013125890 A JP 2013125890A JP 2011274354 A JP2011274354 A JP 2011274354A JP 2011274354 A JP2011274354 A JP 2011274354A JP 2013125890 A JP2013125890 A JP 2013125890A
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- type amorphous
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 271
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 276
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 225
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 90
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000009279 wet oxidation reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 28
- 238000002161 passivation Methods 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 131
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 37
- 230000007246 mechanism Effects 0.000 description 34
- 238000005215 recombination Methods 0.000 description 26
- 230000006798 recombination Effects 0.000 description 26
- 238000002360 preparation method Methods 0.000 description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 239000000969 carrier Substances 0.000 description 14
- 238000010248 power generation Methods 0.000 description 14
- 229910017817 a-Ge Inorganic materials 0.000 description 13
- 230000005684 electric field Effects 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000605 extraction Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274354A JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274354A JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013125890A true JP2013125890A (ja) | 2013-06-24 |
| JP2013125890A5 JP2013125890A5 (enrdf_load_stackoverflow) | 2015-08-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011274354A Pending JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013125890A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013172056A1 (ja) * | 2012-05-14 | 2016-01-12 | 三菱電機株式会社 | 光電変換装置およびその製造方法、光電変換モジュール |
| WO2018061769A1 (ja) * | 2016-09-27 | 2018-04-05 | パナソニックＩｐマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| JP2021516873A (ja) * | 2018-11-27 | 2021-07-08 | チンアオ ソーラー カンパニー リミテッド | 結晶シリコン太陽電池及びその製造方法、太陽光発電モジュール |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008021993A (ja) * | 2006-06-30 | 2008-01-31 | General Electric Co <Ge> | 全背面接点構成を含む光起電力デバイス及び関連する方法 |
| JP2009535845A (ja) * | 2006-05-04 | 2009-10-01 | サンパワー コーポレイション | ドーピングされた半導体ヘテロ接合電極を有する太陽電池 |
| JP2010504636A (ja) * | 2006-09-26 | 2010-02-12 | コミサリア、ア、レネルジ、アトミク | 背面ヘテロ接合太陽電池製造方法 |
| JP2010183080A (ja) * | 2009-02-04 | 2010-08-19 | Lg Electronics Inc | 太陽電池及びその製造方法 |
| JP2013102159A (ja) * | 2011-11-07 | 2013-05-23 | Samsung Sdi Co Ltd | 光電変換素子及び光電変換素子の製造方法 |
-
2011
- 2011-12-15 JP JP2011274354A patent/JP2013125890A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009535845A (ja) * | 2006-05-04 | 2009-10-01 | サンパワー コーポレイション | ドーピングされた半導体ヘテロ接合電極を有する太陽電池 |
| JP2008021993A (ja) * | 2006-06-30 | 2008-01-31 | General Electric Co <Ge> | 全背面接点構成を含む光起電力デバイス及び関連する方法 |
| JP2010504636A (ja) * | 2006-09-26 | 2010-02-12 | コミサリア、ア、レネルジ、アトミク | 背面ヘテロ接合太陽電池製造方法 |
| JP2010183080A (ja) * | 2009-02-04 | 2010-08-19 | Lg Electronics Inc | 太陽電池及びその製造方法 |
| JP2013102159A (ja) * | 2011-11-07 | 2013-05-23 | Samsung Sdi Co Ltd | 光電変換素子及び光電変換素子の製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013172056A1 (ja) * | 2012-05-14 | 2016-01-12 | 三菱電機株式会社 | 光電変換装置およびその製造方法、光電変換モジュール |
| WO2018061769A1 (ja) * | 2016-09-27 | 2018-04-05 | パナソニックＩｐマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| JPWO2018061769A1 (ja) * | 2016-09-27 | 2019-07-04 | パナソニックＩｐマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| JP2021516873A (ja) * | 2018-11-27 | 2021-07-08 | チンアオ ソーラー カンパニー リミテッド | 結晶シリコン太陽電池及びその製造方法、太陽光発電モジュール |
| JP7068541B2 (ja) | 2018-11-27 | 2022-05-16 | チンアオ ソーラー カンパニー リミテッド | 結晶シリコン太陽電池及びその製造方法、太陽光発電モジュール |
| US11961930B2 (en) | 2018-11-27 | 2024-04-16 | Jingao Solar Co., Ltd. | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly |
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