CN113363356A - 异质结太阳能电池及其制造方法 - Google Patents

异质结太阳能电池及其制造方法 Download PDF

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CN113363356A
CN113363356A CN202110610151.9A CN202110610151A CN113363356A CN 113363356 A CN113363356 A CN 113363356A CN 202110610151 A CN202110610151 A CN 202110610151A CN 113363356 A CN113363356 A CN 113363356A
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amorphous silicon
silicon layer
intrinsic
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silane
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马哲国
王琳
吴科俊
汪训忠
张效国
钟潇
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Ideal Energy Sunflower Vacuum Equipment Taixing Ltd
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Abstract

本发明提供异质结太阳能电池及其制造方法。所述异质结太阳能电池包括N型单晶硅片，所述N型单晶硅片的正面上依次形成有第一及第三本征非晶硅层、N型非晶硅层、第一透明导电膜以及第一电极，其反面上依次形成有第二及第四本征非晶硅层、P型非晶硅层、第二透明导电膜以及第二电极，其中第一以及第二本征非晶硅层通过工艺气体为不掺氢的硅烷的第一本征PECVD工艺形成；所述第三本征非晶硅层通过工艺气体包括二氧化碳、氢气以及硅烷的第二本征PECVD工艺形成，其中二氧化碳与硅烷的体积比随时间增加而在0.1‑0.6的范围内增大；所述第四本征非晶硅层通过第三本征PECVD工艺形成，第三本征PECVD工艺的工艺气体包括氢气以及硅烷。本发明有助于提高电池转换效率。

Description

异质结太阳能电池及其制造方法
技术领域
本发明涉及太阳能电池制造领域，特别涉及异质结太阳能电池及其制造方法。
背景技术
薄膜/晶硅异质结太阳能电池(以下简称异质结太阳能电池，又可称HIT或HJT或SHJ太阳能电池)属于第三代高效太阳能电池技术，它结合了晶体硅与硅薄膜的优势，具有转换效率高、温度系数低等特点，将会逐步替代PERC(Passivated Emitterand Rear Cell)电池，成为光伏电池的主流。
异质结太阳能电池的核心制造工艺为其各种非晶硅薄膜的形成，具体包括：利用等离子增强化学气相沉积(PECVD)工艺在表面织构化或制绒后的N型晶体硅的正反面上，通过不掺氢的硅烷作为反应气体的PECVD工艺形成第一本征非晶硅层以及第二本征非晶硅层，之后通过反应气体中氢气与硅烷的体积比为5-10的PECVD工艺在N型晶体硅的正反面上形成第三本征非晶硅层以及第四本征非晶硅层。
上述现有技术制成的异质结太阳能电池的各个本征非晶硅层特别是位于正面的第三本征非晶硅层，由于其禁带宽度较窄，导致对应的太阳能转换效率偏低。为解决现有技术中本征非晶硅层禁带宽度较窄引起的各种问题，业界有人将每个本征非晶硅层都制成掺氧的氢化非晶硅，此举虽能提高禁带宽度，但是掺氧的氢化非晶硅来钝化晶体硅绒面的实际钝化效果并不好。
因此，如何提供一种异质结太阳能电池及其制造方法，以提高太阳电池效率，已成为业内亟待解决的技术问题。
发明内容
针对现有技术的上述问题，本发明提出了一种用于制造异质结太阳能电池的方法，所述方法包括以下步骤：
通过制绒清洗工艺对N型单晶硅片进行制绒及清洗；
通过第一本征PECVD工艺在N型单晶硅片的正反两面上分别形成第一本征非晶硅层以及第二本征非晶硅层，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷；
通过第二本征PECVD工艺在N型单晶硅片的正面上形成第三本征非晶硅层，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大；
通过第三本征PECVD工艺在N型单晶硅片的反面上形成第四本征非晶硅层，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷；
通过N型PECVD工艺在所述第三本征非晶硅层上形成N型非晶硅层；
通过P型PECVD工艺在所述第四本征非晶硅层上形成P型非晶硅层；
通过反应等离子沉积工艺或者物理气相沉积工艺在所述N型非晶硅层以及所述P型非晶硅层上分别形成第一透明导电膜以及第二透明导电膜；以及
通过丝网印刷工艺在所述第一透明导电膜以及所述第二透明导电膜上分别形成第一电极以及第二电极。
在一实施例中，所述P型PECVD工艺的工艺气体包括硼烷以及硅烷，所述N型PECVD工艺的工艺气体包括磷烷以及硅烷。
在一实施例中，所述N型非晶硅层的厚度为5-10nm，所述P型非晶硅层的厚度为5-10nm，所述第一透明导电膜以及所述第二透明导电膜的厚度均为70-110nm。
在一实施例中，所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10。
本发明还提供一种异质结太阳能电池，其包括N型单晶硅片，所述N型单晶硅片的正面上依次形成有第一本征非晶硅层、第三本征非晶硅层、N型非晶硅层、第一透明导电膜以及第一电极，所述N型单晶硅片的反面上依次形成有第二本征非晶硅层、第四本征非晶硅层、P型非晶硅层、第二透明导电膜以及第二电极，其中所述第一本征非晶硅层以及第二本征非晶硅层通过第一本征PECVD工艺形成，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷；所述第三本征非晶硅层通过第二本征PECVD工艺形成，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大；所述第四本征非晶硅层通过第三本征PECVD工艺形成，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷。
在一实施例中，所述P型PECVD工艺的工艺气体包括硼烷以及硅烷，所述N型PECVD工艺的工艺气体包括磷烷以及硅烷。
在一实施例中，所述第一本征非晶硅层的厚度为1-8nm，第二本征非晶硅层厚度为1-8nm，第三本征非晶硅层的厚度为1-8nm，第四本征非晶硅层的厚度为1-8nm。
在一实施例中，所述N型非晶硅层的厚度为5-10nm，所述P型非晶硅层的厚度为5-10nm，所述第一透明导电膜以及所述第二透明导电膜的厚度均为70-110nm。
在一实施例中，所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10。
与现有技术相比，本发明具有以下有益效果：
第一，本发明的异质结太阳能电池包括的N型单晶硅片的正面上依次形成有第一本征非晶硅层、第三本征非晶硅层、N型非晶硅层、第一透明导电膜以及第一电极，所述第三本征非晶硅层通过第二本征PECVD工艺形成，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大。第三本征非晶硅层为掺氧氢化非晶硅，能提升沉积速率，优化本征非晶硅层和N型非晶硅层的能带适配，改善电子传输，能将电池效率提高0.2-0.3％。
第二，本发明的异质结太阳能电池的第一本征非晶硅层以及第二本征非晶硅层通过第一本征PECVD工艺形成，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷；所述第四本征非晶硅层通过第三本征PECVD工艺形成，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷。第一本征非晶硅层以及第二本征非晶硅层能防止非晶硅薄膜在晶体硅表面的外延生长，提高N型单晶硅片表面的钝化效果，降低缺陷态密度。
附图说明
在结合以下附图阅读本公开的实施例的详细描述之后，能够更好地理解本发明的上述特征和优点。在附图中，各组件不一定是按比例绘制，并且具有类似的相关特性或特征的组件可能具有相同或相近的附图标记。
图1为本发明的异质结太阳能电池的组成结构示意图。
图2为本发明的用于制造异质结太阳能电池的方法的流程示意图。
具体实施方案
以下结合附图和具体实施例对本发明作详细描述，以便更清楚理解本发明的目的、特点和优点。应理解的是，以下结合附图和具体实施例描述的诸方面仅是示例性的，而不应被理解为对本发明的保护范围进行任何限制。除非上下文明确地另外指明，否则单数形式“一”和“所述”包括复数指代物。
参见图1，其显示了本发明的异质结太阳能电池的组成结构示意图。如图1所示，异质结太阳能电池1包括N型单晶硅片10。所述N型单晶硅片10的正面S1上依次形成有第一本征非晶硅层11、第三本征非晶硅层13、N型非晶硅层15、第一透明导电膜17以及第一电极19，所述N型单晶硅片10的反面S2上依次形成有第二本征非晶硅层12、第四本征非晶硅层14、P型非晶硅层16、第二透明导电膜18以及第二电极20。以下对异质结太阳能电池1的各个构件进行详细说明。
N型单晶硅片10的电阻率可为0.5-3Ω.cm，厚度可为100-180μm(微米)，尺寸可为125mm×125mm、156mm×156mm、166mm×166mm或210mm×210mm等现在常用或未来的通用尺寸。N型单晶硅片10的正反面上可通过氢氧化钠或氢氧化钾等碱性溶液形成有类似金字塔形的绒面。
第一本征非晶硅层11以及第二本征非晶硅层12可通过第一本征PECVD工艺在N型单晶硅片的正面S1、反面S2上形成。第一本征PECVD工艺的工艺气体为不掺氢的硅烷。第一本征非晶硅层11以及第二本征非晶硅层12的厚度均可为1-8nm(纳米)。
第三本征非晶硅层13通过第二本征PECVD工艺形成，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大，所述增大为近似线性增大。
第四本征非晶硅层14通过第三本征PECVD工艺形成，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷。所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10。
N型非晶硅层15的厚度可为5-10nm，其可通过N型PECVD工艺形成。N型PECVD工艺的工艺气体包括磷烷或其他适于进行N型掺杂的气体以及硅烷，也可选择性地包括氢气。
P型非晶硅层16的厚度可为5-10nm，其可通过P型PECVD工艺形成。P型PECVD工艺的工艺气体包括硼烷或其他适于进行P型掺杂的气体以及硅烷，也可选择性地包括氢气。
第一透明导电膜17和第二透明导电膜18均可为氧化铟锡ITO或ZnO基TCO或IWO或ITIO透明导电薄膜，其可以通过反应等离子沉积(RPD)工艺或者物理气相沉积(PVD)工艺分别形成在N型非晶硅层15和P型非晶硅层16上。所述第一透明导电膜17和第二透明导电膜18的厚度均可为70-110nm。
第一电极19以及第二电极20可由业界通常使用的银浆丝网印刷及固化而形成。异质结太阳能电池1的其他各构件的具体厚度及特性对于本领域的技术人员为已知的，在此不再赘述。
参见图2，其显示了本发明的一种用于制造异质结太阳能电池的方法20的流程示意图。如图2所示，所述方法20首先进行步骤S200，通过制绒清洗工艺对N型单晶硅片10进行制绒及清洗。在本实施例中，步骤S200中可通过碱腐蚀溶液(例如氢氧化钠或氢氧化钾溶液)对N型单晶硅片10进行去损伤层和形成类似金字塔形的绒面。
所述方法20继续进行步骤S210，通过第一本征PECVD工艺在N型单晶硅片10的正面S1、反面S2上分别形成第一本征非晶硅层11以及第二本征非晶硅层12，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷。在本实施例中，第一本征非晶硅层11以及第二本征非晶硅层12的厚度均可为1-8nm。
所述方法20继续进行步骤S220，通过第二本征PECVD工艺在N型单晶硅片10的正面S1上形成第三本征非晶硅层13，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大。在本实施例中，第三本征非晶硅层13的厚度为1-8nm，所述第二本征PECVD工艺的工艺气体中的所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内近似线性增大。
所述方法20继续进行步骤S230，通过第三本征PECVD工艺在N型单晶硅片的反面上形成第四本征非晶硅层14，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷。在本实施例中，所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10，第四本征非晶硅层14的厚度为1-8nm。
所述方法20继续进行步骤S240，通过N型PECVD工艺在所述第三本征非晶硅层13上形成N型非晶硅层15。在本实施例中，所述N型PECVD工艺的工艺气体包括磷烷以及硅烷，所述N型非晶硅层的厚度为5-10nm。
所述方法20继续进行步骤S250，通过P型PECVD工艺在所述第四本征非晶硅层上形成P型非晶硅层16。在本实施例中，所述P型PECVD工艺的工艺气体包括硼烷以及硅烷，所述P型非晶硅层的厚度为5-10nm。
所述方法20继续进行步骤S260，通过反应等离子沉积工艺或者物理气相沉积工艺在N型非晶硅层15以及第二P型非晶硅层16上分别形成第一透明导电膜17以及第二透明导电膜18。在本实施例中，所述第一透明导电膜17以及第二透明导电膜18均可为氧化铟锡ITO或ZnO基TCO或IWO或ITIO透明导电薄膜，其厚度均可为70-110nm。
所述方法20继续进行步骤S270，通过丝网印刷工艺在第一透明导电膜17以及第二透明导电膜18上分别形成第一电极19以及第二电极20。在本实施例中，第一电极19以及第二电极20可由业界通常使用的银浆丝网印刷及固化而形成。
本发明的异质结太阳能电池及其制造方法首先通过制绒清洗工艺对N型单晶硅片进行制绒及清洗；然后通过工艺气体为不掺氢的硅烷的第一本征PECVD工艺在N型单晶硅片的正反两面上分别形成第一本征非晶硅层以及第二本征非晶硅层；之后通过第二本征PECVD工艺在N型单晶硅片的正面上形成第三本征非晶硅层，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大；接着通过第三本征PECVD工艺在N型单晶硅片的反面上形成第四本征非晶硅层，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷；然后通过N型PECVD工艺在所述第三本征非晶硅层上形成N型非晶硅层；接着通过P型PECVD工艺在所述第四本征非晶硅层上形成P型非晶硅层；然后通过反应等离子沉积工艺或者物理气相沉积工艺在所述N型非晶硅层以及所述P型非晶硅层上分别形成第一透明导电膜以及第二透明导电膜；最后通过丝网印刷工艺在所述第一透明导电膜以及所述第二透明导电膜上分别形成第一电极以及第二电极。
本发明有助于改善光吸收造成的光损失，提高电池电流和效率，同时阶梯性掺氧氢化非晶硅优化了非晶硅层和N型非晶硅层的能带适配，改善电子传输，能将电池效率提高0.2-0.3％。第一本征非晶硅层以及第二本征非晶硅层能提高N型单晶硅片表面的钝化效果，降低缺陷态密度。掺氧氢化非晶硅沉积速率上升，所以工艺所需的时间大大降低，有利于提高设备产能。
上述实施例是提供给熟悉本领域内的人员来实现或使用本发明的，熟悉本领域的人员可在不脱离本发明的发明思想的情况下，对上述实施例做出种种修改或变化，因而本发明的保护范围并不被上述实施例所限，而应该是符合权利要求书提到的创新性特征的最大范围。

Claims (10)

1.一种用于制造异质结太阳能电池的方法，所述方法包括以下步骤：
通过制绒清洗工艺对N型单晶硅片进行制绒及清洗；
通过第一本征PECVD工艺在N型单晶硅片的正反两面上分别形成第一本征非晶硅层以及第二本征非晶硅层，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷；
通过第二本征PECVD工艺在N型单晶硅片的正面上继续形成第三本征非晶硅层，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大；
通过第三本征PECVD工艺在N型单晶硅片的反面上继续形成第四本征非晶硅层，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷；
通过N型PECVD工艺在所述第三本征非晶硅层上形成N型非晶硅层；
通过P型PECVD工艺在所述第四本征非晶硅层上形成P型非晶硅层；
通过反应等离子沉积工艺或者物理气相沉积工艺在所述N型非晶硅层以及所述P型非晶硅层上分别形成第一透明导电膜以及第二透明导电膜；以及
通过丝网印刷工艺在所述第一透明导电膜以及所述第二透明导电膜上分别形成第一电极以及第二电极。
2.根据权利要求1所述的用于制造异质结太阳能电池的方法，其特征在于，所述P型PECVD工艺的工艺气体包括硼烷以及硅烷，所述N型PECVD工艺的工艺气体包括磷烷以及硅烷。
3.根据权利要求1所述的用于制造异质结太阳能电池的方法，其特征在于，所述第一本征非晶硅层的厚度为1-8nm，第二本征非晶硅层厚度为1-8nm，第三本征非晶硅层的厚度为1-8nm，第四本征非晶硅层的厚度为1-8nm。
4.根据权利要求1所述的用于制造异质结太阳能电池的方法，其特征在于，所述N型非晶硅层的厚度为5-10nm，所述P型非晶硅层的厚度为5-10nm，所述第一透明导电膜以及所述第二透明导电膜的厚度均为70-110nm。
5.根据权利要求1所述的用于制造异质结太阳能电池的方法，其特征在于，所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10。
6.一种异质结太阳能电池，其包括N型单晶硅片，所述N型单晶硅片的正面上依次形成有第一本征非晶硅层、第三本征非晶硅层、N型非晶硅层、第一透明导电膜以及第一电极，所述N型单晶硅片的反面上依次形成有第二本征非晶硅层、第四本征非晶硅层、P型非晶硅层、第二透明导电膜以及第二电极，其中所述第一本征非晶硅层以及第二本征非晶硅层通过第一本征PECVD工艺形成，所述第一本征PECVD工艺的工艺气体为不掺氢的硅烷；所述第三本征非晶硅层通过第二本征PECVD工艺形成，所述第二本征PECVD工艺的工艺气体包括二氧化碳、氢气以及硅烷，其中所述二氧化碳与硅烷的体积比随时间增加而在0.1-0.6的范围内增大；所述第四本征非晶硅层通过第三本征PECVD工艺形成，所述第三本征PECVD工艺的工艺气体包括氢气以及硅烷。
7.根据权利要求6所述的异质结太阳能电池，其特征在于，所述P型PECVD工艺的工艺气体包括硼烷以及硅烷，所述N型PECVD工艺的工艺气体包括磷烷以及硅烷。
8.根据权利要求6所述的异质结太阳能电池，其特征在于，所述第一本征非晶硅层的厚度为1-8nm，第二本征非晶硅层厚度为1-8nm，第三本征非晶硅层的厚度为1-8nm，第四本征非晶硅层的厚度为1-8nm。
9.根据权利要求6所述的异质结太阳能电池，其特征在于，所述N型非晶硅层的厚度为5-10nm，所述P型非晶硅层的厚度为5-10nm，所述第一透明导电膜以及所述第二透明导电膜的厚度均为70-110nm。
10.根据权利要求6所述的异质结太阳能电池，其特征在于，所述第三本征PECVD工艺的工艺气体中所述氢气与硅烷的体积比为5-10。
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CN113921661A (zh) * 2021-09-23 2022-01-11 上海理想万里晖薄膜设备有限公司 用于制造异质结太阳能电池的方法及异质结太阳能电池
CN114220887A (zh) * 2021-12-11 2022-03-22 中威新能源(成都)有限公司 异质结太阳电池的制备方法、异质结太阳电池及应用
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法

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CN113921661A (zh) * 2021-09-23 2022-01-11 上海理想万里晖薄膜设备有限公司 用于制造异质结太阳能电池的方法及异质结太阳能电池
TWI809987B (zh) * 2021-09-23 2023-07-21 大陸商理想萬里暉半導體設備（上海）股份有限公司 用於製造異質結太陽能電池的方法及異質結太陽能電池
CN113921661B (zh) * 2021-09-23 2023-12-01 理想万里晖半导体设备(上海)股份有限公司 用于制造异质结太阳能电池的方法及异质结太阳能电池
CN114242833A (zh) * 2021-11-18 2022-03-25 国家电投集团科学技术研究院有限公司 异质结太阳电池的硅片处理方法
CN114220887A (zh) * 2021-12-11 2022-03-22 中威新能源(成都)有限公司 异质结太阳电池的制备方法、异质结太阳电池及应用
WO2023103477A1 (zh) * 2021-12-11 2023-06-15 中威新能源(成都)有限公司 异质结太阳电池、其制备方法及发电装置

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