JP2013125890A5 - - Google Patents
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- Publication number
- JP2013125890A5 JP2013125890A5 JP2011274354A JP2011274354A JP2013125890A5 JP 2013125890 A5 JP2013125890 A5 JP 2013125890A5 JP 2011274354 A JP2011274354 A JP 2011274354A JP 2011274354 A JP2011274354 A JP 2011274354A JP 2013125890 A5 JP2013125890 A5 JP 2013125890A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- conductivity type
- film
- amorphous film
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 6
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 238000005234 chemical deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000009279 wet oxidation reaction Methods 0.000 claims 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274354A JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274354A JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013125890A JP2013125890A (ja) | 2013-06-24 |
| JP2013125890A5 true JP2013125890A5 (enrdf_load_stackoverflow) | 2015-08-06 |
Family
ID=48776962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011274354A Pending JP2013125890A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013125890A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104137269B (zh) * | 2012-05-14 | 2016-12-28 | 三菱电机株式会社 | 光电变换装置及其制造方法、光电变换模块 |
| JP6785477B2 (ja) * | 2016-09-27 | 2020-11-18 | パナソニックＩｐマネジメント株式会社 | 太陽電池セルおよび太陽電池セルの製造方法 |
| CN209389043U (zh) | 2018-11-27 | 2019-09-13 | 晶澳（扬州）太阳能科技有限公司 | 晶体硅太阳能电池及光伏组件 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
| US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
| FR2906406B1 (fr) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
| KR101142861B1 (ko) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| KR101826912B1 (ko) * | 2011-11-07 | 2018-02-08 | 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 | 광전변환소자 및 그 제조 방법 |
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2011
- 2011-12-15 JP JP2011274354A patent/JP2013125890A/ja active Pending