JP2013125891A5 - - Google Patents
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- Publication number
- JP2013125891A5 JP2013125891A5 JP2011274370A JP2011274370A JP2013125891A5 JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5 JP 2011274370 A JP2011274370 A JP 2011274370A JP 2011274370 A JP2011274370 A JP 2011274370A JP 2013125891 A5 JP2013125891 A5 JP 2013125891A5
- Authority
- JP
- Japan
- Prior art keywords
- type
- amorphous
- amorphous silicon
- film
- type amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims 33
- 239000010408 film Substances 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 12
- 238000006243 chemical reaction Methods 0.000 claims 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 229910052732 germanium Inorganic materials 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274370A JP2013125891A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011274370A JP2013125891A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013125891A JP2013125891A (ja) | 2013-06-24 |
| JP2013125891A5 true JP2013125891A5 (enrdf_load_stackoverflow) | 2015-01-22 |
Family
ID=48776963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011274370A Pending JP2013125891A (ja) | 2011-12-15 | 2011-12-15 | 光電変換素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2013125891A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016140309A1 (ja) * | 2015-03-04 | 2016-09-09 | シャープ株式会社 | 光電変換素子およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2545066B2 (ja) * | 1985-11-14 | 1996-10-16 | 鐘淵化学工業株式会社 | 半導体装置 |
| FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
| JP2009152222A (ja) * | 2006-10-27 | 2009-07-09 | Kyocera Corp | 太陽電池素子の製造方法 |
| JP2010021490A (ja) * | 2008-07-14 | 2010-01-28 | Kobe Steel Ltd | 半導体配線 |
| KR101142861B1 (ko) * | 2009-02-04 | 2012-05-08 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US8525018B2 (en) * | 2009-09-07 | 2013-09-03 | Lg Electronics Inc. | Solar cell |
-
2011
- 2011-12-15 JP JP2011274370A patent/JP2013125891A/ja active Pending
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