JP2013123028A5 - - Google Patents
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- Publication number
- JP2013123028A5 JP2013123028A5 JP2012092883A JP2012092883A JP2013123028A5 JP 2013123028 A5 JP2013123028 A5 JP 2013123028A5 JP 2012092883 A JP2012092883 A JP 2012092883A JP 2012092883 A JP2012092883 A JP 2012092883A JP 2013123028 A5 JP2013123028 A5 JP 2013123028A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- heat treatment
- treatment apparatus
- sample
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims 15
- 230000008018 melting Effects 0.000 claims 4
- 238000002844 melting Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012092883A JP5977986B2 (ja) | 2011-11-08 | 2012-04-16 | 熱処理装置 |
| US13/550,638 US9490104B2 (en) | 2011-11-08 | 2012-07-17 | Heat treatment apparatus |
| KR1020120078383A KR101360970B1 (ko) | 2011-11-08 | 2012-07-18 | 열처리 장치 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011244083 | 2011-11-08 | ||
| JP2011244083 | 2011-11-08 | ||
| JP2012092883A JP5977986B2 (ja) | 2011-11-08 | 2012-04-16 | 熱処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013123028A JP2013123028A (ja) | 2013-06-20 |
| JP2013123028A5 true JP2013123028A5 (enExample) | 2015-01-08 |
| JP5977986B2 JP5977986B2 (ja) | 2016-08-24 |
Family
ID=48223007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012092883A Expired - Fee Related JP5977986B2 (ja) | 2011-11-08 | 2012-04-16 | 熱処理装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9490104B2 (enExample) |
| JP (1) | JP5977986B2 (enExample) |
| KR (1) | KR101360970B1 (enExample) |
Families Citing this family (18)
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|---|---|---|---|---|
| CN105206496B (zh) | 2008-08-04 | 2019-07-05 | 北美Agc平板玻璃公司 | 等离子体源和用等离子体增强的化学气相沉积来沉积薄膜涂层的方法 |
| JP2013222878A (ja) * | 2012-04-18 | 2013-10-28 | Hitachi High-Technologies Corp | プラズマ熱処理方法および装置 |
| KR20150046966A (ko) * | 2013-10-23 | 2015-05-04 | 삼성디스플레이 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| US9129918B2 (en) * | 2013-10-30 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for annealing semiconductor structures |
| JP2015106595A (ja) * | 2013-11-29 | 2015-06-08 | 株式会社日立ハイテクノロジーズ | 熱処理装置 |
| US9338834B2 (en) * | 2014-01-17 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company Limited | Systems and methods for microwave-radiation annealing |
| CN107615888B (zh) * | 2014-12-05 | 2022-01-04 | 北美Agc平板玻璃公司 | 利用宏粒子减少涂层的等离子体源和将等离子体源用于沉积薄膜涂层和表面改性的方法 |
| ES2883288T3 (es) | 2014-12-05 | 2021-12-07 | Agc Glass Europe Sa | Fuente de plasma de cátodo hueco |
| JP6643029B2 (ja) * | 2015-10-06 | 2020-02-12 | 東洋炭素株式会社 | 単結晶炭化ケイ素基板の加熱処理容器及びエッチング方法 |
| US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
| US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
| US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
| US20170192457A1 (en) * | 2015-12-31 | 2017-07-06 | AAC Technologies Pte. Ltd. | Touch panle, haptics touch display using same, and manufacturing method for making same |
| CN107527768B (zh) * | 2016-06-17 | 2022-07-01 | 松下知识产权经营株式会社 | 电磁铁装置以及搭载了该电磁铁装置的电磁继电器 |
| CN107527769B (zh) * | 2016-06-17 | 2021-05-18 | 松下知识产权经营株式会社 | 电磁铁装置以及搭载了该电磁铁装置的电磁继电器 |
| US11515129B2 (en) * | 2019-12-03 | 2022-11-29 | Applied Materials, Inc. | Radiation shield modification for improving substrate temperature uniformity |
| US20240014052A1 (en) * | 2020-08-13 | 2024-01-11 | Ci Systems (Israel) Ltd. | Synchronization between temperature measurement device and radiation sources |
| WO2024043166A1 (ja) * | 2022-08-22 | 2024-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び基板処理システム |
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| US4687895A (en) * | 1984-07-30 | 1987-08-18 | Superwave Technology, Inc. | Conveyorized microwave heating system |
| US4922079A (en) * | 1988-03-18 | 1990-05-01 | Raytheon Company | Combination cooking cartridge |
| JPH01243530A (ja) * | 1988-03-25 | 1989-09-28 | Seiko Epson Corp | 半導体装置の製造方法 |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| KR960000190B1 (ko) * | 1992-11-09 | 1996-01-03 | 엘지전자주식회사 | 반도체 제조방법 및 그 장치 |
| JPH07231073A (ja) * | 1994-02-17 | 1995-08-29 | Canon Inc | 半導体基板及びその製造方法 |
| ATE181637T1 (de) * | 1994-10-31 | 1999-07-15 | Applied Materials Inc | Plasmareaktoren zur halbleiterscheibenbehandlung |
| JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| KR100266021B1 (ko) * | 1997-12-16 | 2000-09-15 | 김영환 | 플라즈마 열처리장치 및 이를 이용한 캐패시터 형성방법 |
| US6450116B1 (en) * | 1999-04-22 | 2002-09-17 | Applied Materials, Inc. | Apparatus for exposing a substrate to plasma radicals |
| US6227140B1 (en) * | 1999-09-23 | 2001-05-08 | Lam Research Corporation | Semiconductor processing equipment having radiant heated ceramic liner |
| JP2001115267A (ja) * | 1999-10-19 | 2001-04-24 | Canon Inc | プラズマ処理装置及び処理方法 |
| TW511158B (en) * | 2000-08-11 | 2002-11-21 | Alps Electric Co Ltd | Plasma processing apparatus and system, performance validation system thereof |
| US6632325B2 (en) * | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| US7605023B2 (en) * | 2002-08-29 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for a semiconductor device and heat treatment method therefor |
| US7189940B2 (en) * | 2002-12-04 | 2007-03-13 | Btu International Inc. | Plasma-assisted melting |
| DE602005025976D1 (de) | 2004-02-06 | 2011-03-03 | Panasonic Corp | Herstellungsverfahren für ein siliziumcarbidhalbleiterbauelement |
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| JP4633425B2 (ja) * | 2004-09-17 | 2011-02-16 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| JP4004510B2 (ja) * | 2005-03-23 | 2007-11-07 | 有限会社マテリアルデザインファクトリ− | 触媒cvd装置 |
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| JP5076349B2 (ja) * | 2006-04-18 | 2012-11-21 | ウシオ電機株式会社 | 極端紫外光集光鏡および極端紫外光光源装置 |
| KR20070104253A (ko) * | 2006-04-21 | 2007-10-25 | 동경 엘렉트론 주식회사 | Ti 막의 성막 방법 및 컴퓨터 판독 가능 기억 매체 |
| US20100024732A1 (en) * | 2006-06-02 | 2010-02-04 | Nima Mokhlesi | Systems for Flash Heating in Atomic Layer Deposition |
| US20080178805A1 (en) * | 2006-12-05 | 2008-07-31 | Applied Materials, Inc. | Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode |
| EP2111631A1 (en) | 2007-01-25 | 2009-10-28 | BTU International, Inc. | Microwave hybrid and plasma rapid thermal processing or semiconductor wafers |
| JP5049417B2 (ja) * | 2007-02-07 | 2012-10-17 | スタンレー電気株式会社 | 車両用灯具のリフレクター |
| US20080236490A1 (en) * | 2007-03-29 | 2008-10-02 | Alexander Paterson | Plasma reactor with an overhead inductive antenna and an overhead gas distribution showerhead |
| JP5069967B2 (ja) | 2007-07-25 | 2012-11-07 | 株式会社日立国際電気 | 熱処理用部材の製造方法 |
| JP2009231341A (ja) | 2008-03-19 | 2009-10-08 | Ulvac Japan Ltd | アニール装置、SiC半導体基板の熱処理方法 |
| JP2010034481A (ja) | 2008-07-31 | 2010-02-12 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法および半導体装置 |
| WO2011006018A2 (en) * | 2009-07-08 | 2011-01-13 | Plasmasi, Inc. | Apparatus and method for plasma processing |
| US8826855B2 (en) * | 2010-06-30 | 2014-09-09 | Lam Research Corporation | C-shaped confinement ring for a plasma processing chamber |
| JP2012238629A (ja) * | 2011-05-10 | 2012-12-06 | Hitachi High-Technologies Corp | 熱処理装置 |
-
2012
- 2012-04-16 JP JP2012092883A patent/JP5977986B2/ja not_active Expired - Fee Related
- 2012-07-17 US US13/550,638 patent/US9490104B2/en active Active
- 2012-07-18 KR KR1020120078383A patent/KR101360970B1/ko active Active
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