JP2013122487A - 金属格子の製造方法、金属格子およびｘ線撮像装置 - Google Patents
金属格子の製造方法、金属格子およびｘ線撮像装置 Download PDFInfo
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- JP2013122487A JP2013122487A JP2011270088A JP2011270088A JP2013122487A JP 2013122487 A JP2013122487 A JP 2013122487A JP 2011270088 A JP2011270088 A JP 2011270088A JP 2011270088 A JP2011270088 A JP 2011270088A JP 2013122487 A JP2013122487 A JP 2013122487A
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- metal
- etching
- silicon substrate
- resist layer
- silicon
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Links
- 238000000034 method Methods 0.000 title claims abstract description 346
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 286
- 239000002184 metal Substances 0.000 title claims abstract description 286
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 95
- 238000003384 imaging method Methods 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 233
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 233
- 239000010703 silicon Substances 0.000 claims abstract description 233
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 230000008569 process Effects 0.000 claims abstract description 183
- 238000005530 etching Methods 0.000 claims abstract description 157
- 238000005323 electroforming Methods 0.000 claims abstract description 71
- 238000000059 patterning Methods 0.000 claims abstract description 50
- 238000007790 scraping Methods 0.000 claims description 64
- 230000003647 oxidation Effects 0.000 claims description 55
- 238000007254 oxidation reaction Methods 0.000 claims description 55
- LFEUVBZXUFMACD-UHFFFAOYSA-H lead(2+);trioxido(oxo)-$l^{5}-arsane Chemical compound [Pb+2].[Pb+2].[Pb+2].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O LFEUVBZXUFMACD-UHFFFAOYSA-H 0.000 claims description 50
- 230000001681 protective effect Effects 0.000 claims description 50
- 238000001312 dry etching Methods 0.000 claims description 43
- 230000004224 protection Effects 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 description 269
- 239000007789 gas Substances 0.000 description 77
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 72
- 229910052814 silicon oxide Inorganic materials 0.000 description 63
- 239000011347 resin Substances 0.000 description 39
- 229920005989 resin Polymers 0.000 description 39
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 22
- 229910044991 metal oxide Inorganic materials 0.000 description 21
- 150000004706 metal oxides Chemical class 0.000 description 21
- 238000012546 transfer Methods 0.000 description 21
- 238000005229 chemical vapour deposition Methods 0.000 description 20
- 238000009616 inductively coupled plasma Methods 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 238000009623 Bosch process Methods 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000037303 wrinkles Effects 0.000 description 4
- 238000004846 x-ray emission Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 235000006408 oxalic acid Nutrition 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000002120 advanced silicon etching Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000002591 computed tomography Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000009979 protective mechanism Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 2
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000000333 X-ray scattering Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
- Measurement Of Radiation (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Apparatus For Radiation Diagnosis (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011270088A JP2013122487A (ja) | 2011-12-09 | 2011-12-09 | 金属格子の製造方法、金属格子およびｘ線撮像装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011270088A JP2013122487A (ja) | 2011-12-09 | 2011-12-09 | 金属格子の製造方法、金属格子およびｘ線撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013122487A true JP2013122487A (ja) | 2013-06-20 |
| JP2013122487A5 JP2013122487A5 (enExample) | 2014-07-17 |
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| JP2011270088A Pending JP2013122487A (ja) | 2011-12-09 | 2011-12-09 | 金属格子の製造方法、金属格子およびｘ線撮像装置 |
Country Status (1)
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| JP (1) | JP2013122487A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
| KR101678596B1 (ko) | 2015-07-01 | 2016-11-23 | 이비테크(주) | 엑스선회절격자 선택형 위상차 엑스선 영상장치 |
| JP2017041539A (ja) * | 2015-08-20 | 2017-02-23 | 大日本印刷株式会社 | 金属充填構造体及びその製造方法 |
| JP2017116475A (ja) * | 2015-12-25 | 2017-06-29 | キヤノン株式会社 | Ｘ線遮蔽格子、該ｘ線遮蔽格子の製造方法及び該ｘ線遮蔽格子を備えるｘ線トールボット干渉計 |
| WO2017159255A1 (ja) * | 2016-03-14 | 2017-09-21 | 株式会社島津製作所 | 放射線位相差撮影装置 |
| KR101832988B1 (ko) * | 2016-08-04 | 2018-02-28 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
| WO2018097559A1 (ko) * | 2016-11-28 | 2018-05-31 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
| US10045753B2 (en) | 2014-07-24 | 2018-08-14 | Canon Kabushiki Kaisha | Structure, method for manufacturing the same, and talbot interferometer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6243133A (ja) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH097997A (ja) * | 1995-06-16 | 1997-01-10 | Japan Aviation Electron Ind Ltd | アンダーエッチング補正方法及びアンダーエッチング補正マスク |
| JP2005256110A (ja) * | 2004-03-12 | 2005-09-22 | Seiko Instruments Inc | 電鋳用型の構造と製造方法およびその電鋳用型を用いた電鋳方法 |
| JP2010185728A (ja) * | 2009-02-10 | 2010-08-26 | Nanocreate Co Ltd | Ｘ線タルボ回折格子の製造方法、ｘ線タルボ回折格子、ｘ線タルボ干渉計及びｘ線位相イメージング装置 |
| JP2011157622A (ja) * | 2010-01-08 | 2011-08-18 | Canon Inc | 微細構造体の製造方法 |
| JP2011162854A (ja) * | 2010-02-10 | 2011-08-25 | Canon Inc | マイクロ構造体の製造方法および放射線吸収格子 |
-
2011
- 2011-12-09 JP JP2011270088A patent/JP2013122487A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6243133A (ja) * | 1985-08-20 | 1987-02-25 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPH097997A (ja) * | 1995-06-16 | 1997-01-10 | Japan Aviation Electron Ind Ltd | アンダーエッチング補正方法及びアンダーエッチング補正マスク |
| JP2005256110A (ja) * | 2004-03-12 | 2005-09-22 | Seiko Instruments Inc | 電鋳用型の構造と製造方法およびその電鋳用型を用いた電鋳方法 |
| JP2010185728A (ja) * | 2009-02-10 | 2010-08-26 | Nanocreate Co Ltd | Ｘ線タルボ回折格子の製造方法、ｘ線タルボ回折格子、ｘ線タルボ干渉計及びｘ線位相イメージング装置 |
| JP2011157622A (ja) * | 2010-01-08 | 2011-08-18 | Canon Inc | 微細構造体の製造方法 |
| JP2011162854A (ja) * | 2010-02-10 | 2011-08-25 | Canon Inc | マイクロ構造体の製造方法および放射線吸収格子 |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
| US10045753B2 (en) | 2014-07-24 | 2018-08-14 | Canon Kabushiki Kaisha | Structure, method for manufacturing the same, and talbot interferometer |
| KR101678596B1 (ko) | 2015-07-01 | 2016-11-23 | 이비테크(주) | 엑스선회절격자 선택형 위상차 엑스선 영상장치 |
| JP2017041539A (ja) * | 2015-08-20 | 2017-02-23 | 大日本印刷株式会社 | 金属充填構造体及びその製造方法 |
| JP2017116475A (ja) * | 2015-12-25 | 2017-06-29 | キヤノン株式会社 | Ｘ線遮蔽格子、該ｘ線遮蔽格子の製造方法及び該ｘ線遮蔽格子を備えるｘ線トールボット干渉計 |
| WO2017159255A1 (ja) * | 2016-03-14 | 2017-09-21 | 株式会社島津製作所 | 放射線位相差撮影装置 |
| JPWO2017159255A1 (ja) * | 2016-03-14 | 2019-01-31 | 株式会社島津製作所 | 放射線位相差撮影装置 |
| US10732132B2 (en) | 2016-03-14 | 2020-08-04 | Shimadzu Corporation | Radiation phase contrast imaging device |
| KR101832988B1 (ko) * | 2016-08-04 | 2018-02-28 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
| WO2018097559A1 (ko) * | 2016-11-28 | 2018-05-31 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
| KR20180060312A (ko) * | 2016-11-28 | 2018-06-07 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
| KR101871956B1 (ko) * | 2016-11-28 | 2018-07-02 | 주식회사 티지오테크 | 모판, 모판의 제조 방법, 및 마스크의 제조 방법 |
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