JP2013115362A - 窒化物半導体ダイオード - Google Patents
窒化物半導体ダイオード Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 127
- 239000012535 impurity Substances 0.000 claims abstract description 59
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 33
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 239000011777 magnesium Substances 0.000 claims description 24
- 239000011701 zinc Substances 0.000 claims description 24
- 229910002704 AlGaN Inorganic materials 0.000 claims description 16
- 229910052742 iron Inorganic materials 0.000 claims description 14
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001312 dry etching Methods 0.000 abstract description 35
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 31
- 230000015556 catabolic process Effects 0.000 abstract description 21
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 17
- 239000010410 layer Substances 0.000 description 263
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 75
- 229910002601 GaN Inorganic materials 0.000 description 71
- 230000004888 barrier function Effects 0.000 description 36
- 238000009792 diffusion process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- -1 concentration Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
【解決手段】窒化物半導体積層膜の上面に塩素ガスを用いたドライエッチングにより形成した凹部6の底面および側面部に対して、所望の不純物を拡散させる、または所望の不純物を添加した窒化物半導体を再成長することにより、アノード電極7が接触する窒化物半導体積層膜の側面部を高抵抗化させ、逆方向リーク電流を低減する。
【選択図】図1
Description
ために部分的にハッチングを付す場合がある。
はじめに、本発明者らが行った実験結果について説明する。本発明者らは、特許文献1および非特許文献1に記載されているような横型ダイオードの逆方向特性に関する知見を得るため、AlGaN/GaNシングルヘテロ構造を有するエピタキシャル基板を使って、図11および図12に示す構造を有する2種類の横型ダイオードを試作し、両者の逆方向特性を比較・評価した。なお、ここでいうリセス構造とは、基板表面に形成した凹部内に設けた電極を含む素子の構造を指すものとする。
次に、本発明の実施の形態2である窒化物半導体ダイオードの実施形態について説明する。図2および図3は、それぞれ本実施の形態に係る窒化物半導体ダイオードの断面図および平面図である。
次に、本発明の実施の形態3である窒化物半導体ダイオードの実施形態について説明する。図8は、本実施の形態に係る窒化物半導体ダイオードの断面図である。
2 高抵抗バッファ層
3 バリア層
4 キャップ層
5、5a〜5c 導電層
6 凹部
7、7a アノード(ショットキー)電極
8、8a、8b カソード(オーミック)電極
9 再成長層
10 SiO2膜
11 中間GaN層
12 n型層
13 p型不純物拡散領域
15 凸部
16 n型GaN基板
17 低濃度n型GaN層
20 キャップ膜
Claims (10)
- 基板と、
前記基板上に形成された第1窒化物半導体層および前記第1窒化物半導体層よりもバンドギャップエネルギーが大きい第2窒化物半導体層が積層されたヘテロ接合型の積層膜と、
前記積層膜の側面にオーミック接続されたカソード電極と、
アノード電極と、
を備え、
前記積層膜は、前記第1窒化物半導体層および前記第2窒化物半導体層の界面であるヘテロ接合面の深さに達する凹部を備え、
前記凹部において、C(炭素)、Fe(鉄)、Zn(亜鉛)、Mg(マグネシウム)の群から選択された少なくとも1種類以上の不純物が注入された領域を備え、
前記アノード電極は、前記領域に接して前記積層膜とショットキー接続していることを特徴とする窒化物半導体ダイオード。 - 前記領域は、前記積層膜自体に前記不純物を注入するか、前記不純物を含む膜を成膜することにより形成されていることを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記領域は、CもしくはFeが4×1016cm−3以上の濃度で含まれているか、またはMgが1×1017cm−3以上の濃度で含まれていることを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記領域における前記不純物の濃度は、前記カソード電極と前記積層膜との界面の前記積層膜中の前記不純物の濃度よりも高いことを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記第1窒化物半導体層はGaNを含み、
前記第2窒化物半導体層はAlGaN、InAlNまたはInAlGaNを含むことを特徴とする請求項1記載の窒化物半導体ダイオード。 - 前記カソード電極に隣接する前記積層膜内にはSiが導入されていることを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記基板はサファイア、Si、SiCまたはGaNを含むことを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記積層膜の最上層に形成された前記第2窒化物半導体層上にはGaNを含むキャップ層が形成されていることを特徴とする請求項1記載の窒化物半導体ダイオード。
- 前記領域はGaN、AlGaN、InGaN、InAlNまたはInAlGaNを含むことを特徴とする請求項2記載の窒化物半導体ダイオード。
- 前記第1窒化物半導体層および前記第2窒化物半導体層にはCまたはFeが導入されていることを特徴とする請求項1記載の窒化物半導体ダイオード。
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US11923463B2 (en) * | 2021-04-29 | 2024-03-05 | Virginia Tech Intellectual Properties, Inc. | Power Schottky barrier diodes with high breakdown voltage and low leakage current |
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US8896027B2 (en) | 2014-11-25 |
US20130134443A1 (en) | 2013-05-30 |
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