JP2013115083A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP2013115083A
JP2013115083A JP2011257128A JP2011257128A JP2013115083A JP 2013115083 A JP2013115083 A JP 2013115083A JP 2011257128 A JP2011257128 A JP 2011257128A JP 2011257128 A JP2011257128 A JP 2011257128A JP 2013115083 A JP2013115083 A JP 2013115083A
Authority
JP
Japan
Prior art keywords
semiconductor element
heat
semiconductor device
substrate
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2011257128A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013115083A5 (enExample
Inventor
Takumi Ihara
匠 井原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to JP2011257128A priority Critical patent/JP2013115083A/ja
Priority to US13/668,623 priority patent/US20130134574A1/en
Priority to CN2012104688562A priority patent/CN103137574A/zh
Publication of JP2013115083A publication Critical patent/JP2013115083A/ja
Publication of JP2013115083A5 publication Critical patent/JP2013115083A5/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26165—Alignment aids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H01L2224/83138—Aligning involving guiding structures, e.g. spacers or supporting members the guiding structures being at least partially left in the finished device
    • H01L2224/8314—Guiding structures outside the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2011257128A 2011-11-25 2011-11-25 半導体装置及びその製造方法 Ceased JP2013115083A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011257128A JP2013115083A (ja) 2011-11-25 2011-11-25 半導体装置及びその製造方法
US13/668,623 US20130134574A1 (en) 2011-11-25 2012-11-05 Semiconductor device and method for fabricating the same
CN2012104688562A CN103137574A (zh) 2011-11-25 2012-11-19 半导体器件及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011257128A JP2013115083A (ja) 2011-11-25 2011-11-25 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2013115083A true JP2013115083A (ja) 2013-06-10
JP2013115083A5 JP2013115083A5 (enExample) 2014-09-18

Family

ID=48466076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011257128A Ceased JP2013115083A (ja) 2011-11-25 2011-11-25 半導体装置及びその製造方法

Country Status (3)

Country Link
US (1) US20130134574A1 (enExample)
JP (1) JP2013115083A (enExample)
CN (1) CN103137574A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017199819A (ja) * 2016-04-28 2017-11-02 日立オートモティブシステムズ株式会社 電子制御装置
US10236189B2 (en) 2017-06-21 2019-03-19 International Business Machines Corporation Adhesive-bonded thermal interface structures for integrated circuit cooling
WO2022224537A1 (ja) * 2021-04-20 2022-10-27 日立Astemo株式会社 車載装置
JP7242824B1 (ja) 2021-12-16 2023-03-20 レノボ・シンガポール・プライベート・リミテッド 放熱構造および電子機器

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI582905B (zh) * 2016-01-07 2017-05-11 晨星半導體股份有限公司 晶片封裝結構及其製作方法
US11355412B2 (en) * 2018-09-28 2022-06-07 Xilinx, Inc. Stacked silicon package assembly having thermal management
CN111211059B (zh) * 2018-11-22 2023-07-04 矽品精密工业股份有限公司 电子封装件及其制法与散热件
CN109755197A (zh) * 2019-01-14 2019-05-14 苏州通富超威半导体有限公司 封装结构及其形成方法
CN110416097B (zh) * 2019-06-12 2021-05-11 苏州通富超威半导体有限公司 防止铟金属溢出的封装结构及封装方法
US20210035921A1 (en) 2019-07-30 2021-02-04 Intel Corporation Soldered metallic reservoirs for enhanced transient and steady-state thermal performance
TWI730703B (zh) * 2020-03-31 2021-06-11 大陸商上海兆芯集成電路有限公司 晶片封裝體
US11705381B2 (en) 2021-06-04 2023-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. High efficiency heat dissipation using thermal interface material film
CN115939053A (zh) * 2022-05-20 2023-04-07 江苏芯德半导体科技有限公司 一种半导体封装结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281573B1 (en) * 1998-03-31 2001-08-28 International Business Machines Corporation Thermal enhancement approach using solder compositions in the liquid state
US20050201062A1 (en) * 2004-03-11 2005-09-15 International Business Machines Corporation Apparatus and method for attaching a heat sink to an integrated circuit module
JP2007258430A (ja) * 2006-03-23 2007-10-04 Fujitsu Ltd 半導体装置
JP2012015372A (ja) * 2010-07-01 2012-01-19 Nec Corp 電子部品の冷却構造、電子部品装置、ヒートシンク

Family Cites Families (95)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE420964B (sv) * 1980-03-27 1981-11-09 Asea Ab Kompositmaterial och sett for dess framstellning
US4843693A (en) * 1986-05-19 1989-07-04 John Chisholm Method of making a crimped wire mesh heat exchanger/sink
JP2544497B2 (ja) * 1990-02-28 1996-10-16 株式会社日立製作所 コンピュ―タ冷却装置
JP2821229B2 (ja) * 1990-03-30 1998-11-05 株式会社日立製作所 電子回路装置
JP2927010B2 (ja) * 1991-03-01 1999-07-28 株式会社日立製作所 半導体パッケージ
JP3018554B2 (ja) * 1991-04-25 2000-03-13 株式会社日立製作所 半導体モジュ−ル及びその製造方法
JP3232618B2 (ja) * 1992-02-05 2001-11-26 株式会社日立製作所 Ｌｓｉ冷却装置
US5312508A (en) * 1992-10-16 1994-05-17 John Chisholm Attaching crimped wire mesh to an object requiring heat transfer
US5323294A (en) * 1993-03-31 1994-06-21 Unisys Corporation Liquid metal heat conducting member and integrated circuit package incorporating same
US5604978A (en) * 1994-12-05 1997-02-25 International Business Machines Corporation Method for cooling of chips using a plurality of materials
EP0732743A3 (en) * 1995-03-17 1998-05-13 Texas Instruments Incorporated Heat sinks
CN1179619C (zh) * 1996-09-09 2004-12-08 Nec东金株式会社 高导热性复合磁体
DE19805930A1 (de) * 1997-02-13 1998-08-20 Furukawa Electric Co Ltd Kühlvorrichtung
US6286206B1 (en) * 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
US5990418A (en) * 1997-07-29 1999-11-23 International Business Machines Corporation Hermetic CBGA/CCGA structure with thermal paste cooling
US6018459A (en) * 1997-11-17 2000-01-25 Cray Research, Inc. Porous metal heat sink
US6121680A (en) * 1999-02-16 2000-09-19 Intel Corporation Mesh structure to avoid thermal grease pump-out in integrated circuit heat sink attachments
US6984685B2 (en) * 2000-04-05 2006-01-10 The Bergquist Company Thermal interface pad utilizing low melting metal with retention matrix
US6541310B1 (en) * 2000-07-24 2003-04-01 Siliconware Precision Industries Co., Ltd. Method of fabricating a thin and fine ball-grid array package with embedded heat spreader
US6523608B1 (en) * 2000-07-31 2003-02-25 Intel Corporation Thermal interface material on a mesh carrier
US6400014B1 (en) * 2001-01-13 2002-06-04 Siliconware Precision Industries Co., Ltd. Semiconductor package with a heat sink
US6472743B2 (en) * 2001-02-22 2002-10-29 Siliconware Precision Industries, Co., Ltd. Semiconductor package with heat dissipating structure
JP4714371B2 (ja) * 2001-06-06 2011-06-29 ポリマテック株式会社 熱伝導性成形体及びその製造方法
JP4062994B2 (ja) * 2001-08-28 2008-03-19 株式会社豊田自動織機 放熱用基板材、複合材及びその製造方法
JP2003152145A (ja) * 2001-08-31 2003-05-23 Sumitomo Electric Ind Ltd 半導体放熱用基板とその製造方法及びパッケージ
US6561267B2 (en) * 2001-09-28 2003-05-13 Intel Corporation Heat sink and electronic circuit module including the same
JP4268778B2 (ja) * 2001-12-27 2009-05-27 ポリマテック株式会社 発熱電子部品の冷却方法及びそれに用いる熱伝導性シート
US6773963B2 (en) * 2002-01-16 2004-08-10 Intel Corporation Apparatus and method for containing excess thermal interface material
JP2005516425A (ja) * 2002-01-30 2005-06-02 エレル，デイビット フィン対空気の接触面積が大きいヒートシンク
US7173334B2 (en) * 2002-10-11 2007-02-06 Chien-Min Sung Diamond composite heat spreader and associated methods
AU2003284065A1 (en) * 2002-10-11 2005-05-05 Chien-Min Sung Carbonaceous heat spreader and associated methods
US6919504B2 (en) * 2002-12-19 2005-07-19 3M Innovative Properties Company Flexible heat sink
JP4471646B2 (ja) * 2003-01-15 2010-06-02 株式会社豊田自動織機 複合材及びその製造方法
US6921971B2 (en) * 2003-01-15 2005-07-26 Kyocera Corporation Heat releasing member, package for accommodating semiconductor element and semiconductor device
KR100594602B1 (ko) * 2003-04-28 2006-06-30 히다치 훈마츠 야킨 가부시키가이샤 구리 기재 저열팽창 고열전도 부재의 제조 방법
US20040261988A1 (en) * 2003-06-27 2004-12-30 Ioan Sauciuc Application and removal of thermal interface material
US7044199B2 (en) * 2003-10-20 2006-05-16 Thermal Corp. Porous media cold plate
JP2005136018A (ja) * 2003-10-29 2005-05-26 Denso Corp 半導体装置
US20060035413A1 (en) * 2004-01-13 2006-02-16 Cookson Electronics, Inc. Thermal protection for electronic components during processing
US7470990B2 (en) * 2004-03-31 2008-12-30 Endicott Interconnect Technologies, Inc. Low moisture absorptive circuitized substrate with reduced thermal expansion, method of making same, electrical assembly utilizing same, and information handling system utilizing same
US7549460B2 (en) * 2004-04-02 2009-06-23 Adaptivenergy, Llc Thermal transfer devices with fluid-porous thermally conductive core
US20050254208A1 (en) * 2004-05-17 2005-11-17 Belady Christian L Air flow direction neutral heat transfer device
US6965171B1 (en) * 2004-06-07 2005-11-15 International Business Machines Corporation Method and structure for selective thermal paste deposition and retention on integrated circuit chip modules
US20060060952A1 (en) * 2004-09-22 2006-03-23 Tsorng-Dih Yuan Heat spreader for non-uniform power dissipation
JP2006140327A (ja) * 2004-11-12 2006-06-01 Matsushita Electric Ind Co Ltd 配線基板およびこれを用いた電子部品の実装方法
US7554190B2 (en) * 2004-12-03 2009-06-30 Chris Macris Liquid metal thermal interface material system
US7755179B2 (en) * 2004-12-20 2010-07-13 Semiconductor Components Industries, Llc Semiconductor package structure having enhanced thermal dissipation characteristics
US7219713B2 (en) * 2005-01-18 2007-05-22 International Business Machines Corporation Heterogeneous thermal interface for cooling
US7288840B2 (en) * 2005-01-18 2007-10-30 International Business Machines Corporation Structure for cooling a surface
US7228887B2 (en) * 2005-02-23 2007-06-12 Asia Vital Component Co., Ltd. Radiator structure
US20060209516A1 (en) * 2005-03-17 2006-09-21 Chengalva Suresh K Electronic assembly with integral thermal transient suppression
US8084863B2 (en) * 2005-03-23 2011-12-27 Endicott Interconnect Technologies, Inc. Circuitized substrate with continuous thermoplastic support film dielectric layers
US7646098B2 (en) * 2005-03-23 2010-01-12 Endicott Interconnect Technologies, Inc. Multilayered circuitized substrate with p-aramid dielectric layers and method of making same
US7239517B2 (en) * 2005-04-11 2007-07-03 Intel Corporation Integrated heat spreader and method for using
US7282799B2 (en) * 2005-05-20 2007-10-16 International Business Machines Corporation Thermal interface with a patterned structure
US7786486B2 (en) * 2005-08-02 2010-08-31 Satcon Technology Corporation Double-sided package for power module
DE102005047106B4 (de) * 2005-09-30 2009-07-23 Infineon Technologies Ag Leistungshalbleitermodul und Verfahren zur Herstellung
US7297399B2 (en) * 2005-10-11 2007-11-20 General Electric Company Thermal transport structure and associated method
US7695808B2 (en) * 2005-11-07 2010-04-13 3M Innovative Properties Company Thermal transfer coating
US7360581B2 (en) * 2005-11-07 2008-04-22 3M Innovative Properties Company Structured thermal transfer article
US20070108595A1 (en) * 2005-11-16 2007-05-17 Ati Technologies Inc. Semiconductor device with integrated heat spreader
US7443684B2 (en) * 2005-11-18 2008-10-28 Nanoforce Technologies Corporation Heat sink apparatus
JP4764159B2 (ja) * 2005-12-20 2011-08-31 富士通セミコンダクター株式会社 半導体装置
CN101379612B (zh) * 2006-02-24 2014-07-09 富士通株式会社 半导体装置
JP4691455B2 (ja) * 2006-02-28 2011-06-01 富士通株式会社 半導体装置
JP2007243106A (ja) * 2006-03-13 2007-09-20 Fujitsu Ltd 半導体パッケージ構造
JP2007266150A (ja) * 2006-03-28 2007-10-11 Fujitsu Ltd 熱伝導性接合材、半導体パッケージ、ヒートスプレッダ、半導体チップ、及び半導体チップとヒートスプレッダとを接合する接合方法
JP4897360B2 (ja) * 2006-06-08 2012-03-14 ポリマテック株式会社 熱伝導性成形体及びその製造方法
JP2008016653A (ja) * 2006-07-06 2008-01-24 Fujitsu Ltd 半導体パッケージ、その製造方法、プリント基板及び電子機器
US7687722B2 (en) * 2006-10-03 2010-03-30 Endicott Interconnect Technologies, Inc. Halogen-free circuitized substrate with reduced thermal expansion, method of making same, multilayered substrate structure utilizing same, and information handling system utilizing same
TWI355048B (en) * 2006-12-13 2011-12-21 Siliconware Precision Industries Co Ltd Heat-dissipation semiconductor package and heat-di
US7468886B2 (en) * 2007-03-05 2008-12-23 International Business Machines Corporation Method and structure to improve thermal dissipation from semiconductor devices
JP5183947B2 (ja) * 2007-03-29 2013-04-17 ポリマテック株式会社 熱伝導性シート積層体
JP5140302B2 (ja) * 2007-03-29 2013-02-06 ポリマテック株式会社 熱伝導性シート
EP2162910B1 (en) * 2007-04-23 2013-06-12 University College Cork-National University of Ireland, Cork A thermal interface material
US8269340B2 (en) * 2007-09-19 2012-09-18 International Business Machines Corporation Curvilinear heat spreader/lid with improved heat dissipation
US8097946B2 (en) * 2007-10-31 2012-01-17 Sanyo Electric Co., Ltd. Device mounting board, semiconductor module, and mobile device
US8044499B2 (en) * 2008-06-10 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof
US7928562B2 (en) * 2008-07-22 2011-04-19 International Business Machines Corporation Segmentation of a die stack for 3D packaging thermal management
US8054629B2 (en) * 2008-09-30 2011-11-08 Intel Corporation Microfins for cooling an ultramobile device
US7964951B2 (en) * 2009-03-16 2011-06-21 Ati Technologies Ulc Multi-die semiconductor package with heat spreader
US8034662B2 (en) * 2009-03-18 2011-10-11 Advanced Micro Devices, Inc. Thermal interface material with support structure
US8780558B2 (en) * 2009-09-02 2014-07-15 University Of Washington Through Its Center For Commercialization Porous thermoplastic foams as heat transfer materials
JP5733893B2 (ja) * 2009-12-22 2015-06-10 新光電気工業株式会社 電子部品装置
US8658263B2 (en) * 2010-04-30 2014-02-25 Mitsui Chemicals, Inc. Shape-retaining film, process for producing same, laminate for packaging, packaging material and process for producing same, shape-retaining fiber, and anisotropic heat-conductive film
US8299608B2 (en) * 2010-07-08 2012-10-30 International Business Machines Corporation Enhanced thermal management of 3-D stacked die packaging
US8431048B2 (en) * 2010-07-23 2013-04-30 International Business Machines Corporation Method and system for alignment of graphite nanofibers for enhanced thermal interface material performance
JP5537341B2 (ja) * 2010-08-31 2014-07-02 株式会社東芝 半導体装置
US8777699B2 (en) * 2010-09-21 2014-07-15 Ritedia Corporation Superabrasive tools having substantially leveled particle tips and associated methods
US8531014B2 (en) * 2010-09-27 2013-09-10 Infineon Technologies Ag Method and system for minimizing carrier stress of a semiconductor device
JP5573645B2 (ja) * 2010-12-15 2014-08-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
US8786076B2 (en) * 2011-03-21 2014-07-22 Stats Chippac, Ltd. Semiconductor device and method of forming a thermally reinforced semiconductor die
US8430295B2 (en) * 2011-09-30 2013-04-30 Rohm And Haas Electronic Materials Llc Curable flux composition and method of soldering
JP5899768B2 (ja) * 2011-09-30 2016-04-06 富士通株式会社 半導体パッケージ、配線基板ユニット、及び電子機器
US8430293B2 (en) * 2011-09-30 2013-04-30 Rohm And Haas Electronic Materials Llc Curable amine, carboxylic acid flux composition and method of soldering

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6281573B1 (en) * 1998-03-31 2001-08-28 International Business Machines Corporation Thermal enhancement approach using solder compositions in the liquid state
US20050201062A1 (en) * 2004-03-11 2005-09-15 International Business Machines Corporation Apparatus and method for attaching a heat sink to an integrated circuit module
JP2007258430A (ja) * 2006-03-23 2007-10-04 Fujitsu Ltd 半導体装置
JP2012015372A (ja) * 2010-07-01 2012-01-19 Nec Corp 電子部品の冷却構造、電子部品装置、ヒートシンク

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017199819A (ja) * 2016-04-28 2017-11-02 日立オートモティブシステムズ株式会社 電子制御装置
US10236189B2 (en) 2017-06-21 2019-03-19 International Business Machines Corporation Adhesive-bonded thermal interface structures for integrated circuit cooling
US10304699B2 (en) 2017-06-21 2019-05-28 International Business Machines Corporation Adhesive-bonded thermal interface structures
US10319609B2 (en) * 2017-06-21 2019-06-11 International Business Machines Corporation Adhesive-bonded thermal interface structures
US10607859B2 (en) 2017-06-21 2020-03-31 International Business Machines Corporation Adhesive-bonded thermal interface structures
WO2022224537A1 (ja) * 2021-04-20 2022-10-27 日立Astemo株式会社 車載装置
JP7242824B1 (ja) 2021-12-16 2023-03-20 レノボ・シンガポール・プライベート・リミテッド 放熱構造および電子機器
JP2023089648A (ja) * 2021-12-16 2023-06-28 レノボ・シンガポール・プライベート・リミテッド 放熱構造および電子機器

Also Published As

Publication number Publication date
CN103137574A (zh) 2013-06-05
US20130134574A1 (en) 2013-05-30

Similar Documents

Publication Publication Date Title
JP2013115083A (ja) 半導体装置及びその製造方法
JP5799541B2 (ja) 半導体装置及びその製造方法
US8461690B2 (en) Semiconductor device capable of suppressing generation of cracks in semiconductor chip during manufacturing process
CN102256452B (zh) 具有内置半导体芯片的电路板以及制造该电路板的方法
KR101489325B1 (ko) 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
US7902678B2 (en) Semiconductor device and manufacturing method thereof
JP4074862B2 (ja) 半導体装置の製造方法、半導体装置、および半導体チップ
JP6569375B2 (ja) 半導体装置、半導体装置の製造方法及び電子装置
JP6299066B2 (ja) 半導体装置および半導体装置の製造方法
CN103262236B (zh) 半导体元件中的无铅结构
US20120168930A1 (en) Semiconductor device
JP2012204631A (ja) 半導体装置、半導体装置の製造方法及び電子装置
JP2007234781A (ja) 半導体装置及び放熱部材
US9171814B2 (en) Method of manufacturing semiconductor device and semiconductor device
JP2012142521A (ja) 電力用半導体装置
JP4910439B2 (ja) 半導体装置
JP5799565B2 (ja) 半導体装置及びその製造方法
JP2008016653A (ja) 半導体パッケージ、その製造方法、プリント基板及び電子機器
JP5958136B2 (ja) 半導体装置及び半導体装置の製造方法
JP5212392B2 (ja) 半導体装置
JP7526642B2 (ja) 半導体装置およびその製造方法
KR101418399B1 (ko) 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의 제조방법
US20160254241A1 (en) Printed circuit board and soldering method
JP2007208056A (ja) 半導体装置の製造方法
JP5401498B2 (ja) 電子装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140806

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140806

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20150611

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150821

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150929

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151126

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160531

A045 Written measure of dismissal of application [lapsed due to lack of payment]

Free format text: JAPANESE INTERMEDIATE CODE: A045

Effective date: 20160927