JP7242824B1 - 放熱構造および電子機器 - Google Patents
放熱構造および電子機器 Download PDFInfo
- Publication number
- JP7242824B1 JP7242824B1 JP2021204268A JP2021204268A JP7242824B1 JP 7242824 B1 JP7242824 B1 JP 7242824B1 JP 2021204268 A JP2021204268 A JP 2021204268A JP 2021204268 A JP2021204268 A JP 2021204268A JP 7242824 B1 JP7242824 B1 JP 7242824B1
- Authority
- JP
- Japan
- Prior art keywords
- die
- dissipation structure
- heat dissipation
- transfer plate
- heat transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 51
- 238000012546 transfer Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 36
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 34
- 239000011810 insulating material Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 12
- 239000013013 elastic material Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29105—Gallium [Ga] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
12 電子機器
14 CPU(半導体チップ)
16 ベーパーチャンバ
22 サブストレート
24 ダイ
26 基板
28,28a キャパシタ(電気素子)
30,50 伝熱板
30a,30b 貫通孔(凹部)
32 液体金属
33a,33b シート
34 絶縁材
36,60 弾性材
36a,60a 矩形孔
38 隙間
50a,50b 有底穴(凹部)
Claims (8)
- サブストレートの表面にダイが設けられてその周囲に電気素子が設けられている半導体チップの放熱構造であって、
前記ダイの表面に対して熱接続される伝熱板と、
前記ダイの表面と前記伝熱板との間に設けられる液体金属と、
前記電気素子を覆う絶縁材と、
を有し、
前記伝熱板は、前記電気素子と対面する箇所に凹部が形成されており、
前記凹部は貫通孔であり、
前記貫通孔は絶縁性のシートで塞がれている
ことを特徴とする放熱構造。 - サブストレートの表面にダイが設けられてその周囲に電気素子が設けられている半導体チップの放熱構造であって、
前記ダイの表面に対して熱接続される伝熱板と、
前記ダイの表面と前記伝熱板との間に設けられる液体金属と、
前記電気素子を覆う絶縁材と、
前記ダイを囲うように設けられて前記サブストレートと前記伝熱板によって挟持される弾性材と、
を有し、
前記伝熱板は、前記電気素子と対面する箇所に凹部が形成されており、
前記弾性材は前記絶縁材を介して前記電気素子を覆っている
ことを特徴とする放熱構造。 - 請求項2に記載の放熱構造において、
前記絶縁材は前記サブストレートに対して接着されている
ことを特徴とする放熱構造。 - 請求項2または3に記載の放熱構造において、
前記絶縁材と前記ダイとの間には隙間が設けられている
ことを特徴とする放熱構造。 - 請求項1~4のいずれか1項に記載の放熱構造において、
前記凹部は有底穴である
ことを特徴とする放熱構造。 - 請求項1~5のいずれか1項に記載の放熱構造において、
前記半導体チップは基板に実装されたCPUであり、前記電気素子はキャパシタである
ことを特徴とする放熱構造。 - 請求項1~6のいずれか1項に記載の放熱構造において、
前記絶縁材は、紫外線硬化型のコーティング材である
ことを特徴とする放熱構造。 - 請求項1~7のいずれか1項に記載の放熱構造および前記半導体チップを備える
ことを特徴とする電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021204268A JP7242824B1 (ja) | 2021-12-16 | 2021-12-16 | 放熱構造および電子機器 |
US17/937,781 US20230197564A1 (en) | 2021-12-16 | 2022-10-04 | Heat dissipation structure and electronic apparatus |
CN202211605431.1A CN116564908A (zh) | 2021-12-16 | 2022-12-14 | 散热构造以及电子设备 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021204268A JP7242824B1 (ja) | 2021-12-16 | 2021-12-16 | 放熱構造および電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP7242824B1 true JP7242824B1 (ja) | 2023-03-20 |
JP2023089648A JP2023089648A (ja) | 2023-06-28 |
Family
ID=85641202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021204268A Active JP7242824B1 (ja) | 2021-12-16 | 2021-12-16 | 放熱構造および電子機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20230197564A1 (ja) |
JP (1) | JP7242824B1 (ja) |
CN (1) | CN116564908A (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007096975A1 (ja) | 2006-02-24 | 2007-08-30 | Fujitsu Limited | 半導体装置 |
JP2007258430A (ja) | 2006-03-23 | 2007-10-04 | Fujitsu Ltd | 半導体装置 |
JP2013115083A (ja) | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2014017371A (ja) | 2012-07-09 | 2014-01-30 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置製造方法 |
WO2020162417A1 (ja) | 2019-02-04 | 2020-08-13 | 株式会社ソニー・インタラクティブエンタテインメント | 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法 |
US20210337696A1 (en) | 2020-04-27 | 2021-10-28 | Morningrich Technology Co., Ltd. | Heat dissipation structure and electronic device adopting the same |
-
2021
- 2021-12-16 JP JP2021204268A patent/JP7242824B1/ja active Active
-
2022
- 2022-10-04 US US17/937,781 patent/US20230197564A1/en active Pending
- 2022-12-14 CN CN202211605431.1A patent/CN116564908A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007096975A1 (ja) | 2006-02-24 | 2007-08-30 | Fujitsu Limited | 半導体装置 |
JP2007258430A (ja) | 2006-03-23 | 2007-10-04 | Fujitsu Ltd | 半導体装置 |
JP2013115083A (ja) | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2014017371A (ja) | 2012-07-09 | 2014-01-30 | Fujitsu Semiconductor Ltd | 半導体装置及び半導体装置製造方法 |
WO2020162417A1 (ja) | 2019-02-04 | 2020-08-13 | 株式会社ソニー・インタラクティブエンタテインメント | 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法 |
US20210337696A1 (en) | 2020-04-27 | 2021-10-28 | Morningrich Technology Co., Ltd. | Heat dissipation structure and electronic device adopting the same |
Also Published As
Publication number | Publication date |
---|---|
JP2023089648A (ja) | 2023-06-28 |
US20230197564A1 (en) | 2023-06-22 |
CN116564908A (zh) | 2023-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106793675B (zh) | 屏蔽组件 | |
US7623349B2 (en) | Thermal management apparatus and method for a circuit substrate | |
US9196564B2 (en) | Apparatus and method for a back plate for heat sink mounting | |
JP2005116704A (ja) | メモリモジュール放熱装置 | |
CN102246616A (zh) | 电路模块 | |
US6101094A (en) | Printed circuit board with integrated cooling mechanism | |
US20200388555A1 (en) | Apparatus for thermal management of electronic components | |
JP5738679B2 (ja) | 放熱構造 | |
WO2014140098A1 (en) | Heat spreader with flat pipe cooling element | |
JP7242824B1 (ja) | 放熱構造および電子機器 | |
CN108633213B (zh) | 电子装置 | |
JP2004079949A (ja) | メモリモジュール内発熱半導体素子の放熱装置 | |
JP3116877U (ja) | 低融点金属合金の熱伝導媒体を有する酸化防止装置 | |
JP2020061482A (ja) | 放熱構造 | |
CN116247013A (zh) | 芯片封装模组及电子设备 | |
CN215834516U (zh) | 电子元件的导热装置 | |
JP4430451B2 (ja) | 半導体素子の放熱装置 | |
JP2010135459A (ja) | 半導体パッケージおよび放熱器 | |
JP3153018U (ja) | 通信装置筐体の放熱装置 | |
JP7397921B1 (ja) | 放熱構造、および電子機器 | |
CN113268127A (zh) | 电子设备 | |
JPH1126660A (ja) | 高発熱素子の放熱構造 | |
US12002733B2 (en) | Heat dissipation structure, manufacturing method for heat dissipation structure, and electronic apparatus | |
JP7282929B1 (ja) | 放熱構造の製造方法 | |
JP7472224B1 (ja) | 放熱構造、電子機器、および伝熱構造体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20211216 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20220818 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230308 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7242824 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |