JP2013115070A - 半導体パッケージ及びその製造方法 - Google Patents
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Abstract
【解決手段】搭載部材11の素子搭載凹部12内のうちのLED素子13の周囲に、透明な絶縁性樹脂16を充填し、LED素子13上面の電極部14と搭載部材11上面の電極部15との間をつなぐ配線経路を絶縁性樹脂16で平坦化する。液滴吐出法により撥液性のプライマ樹脂インクを絶縁性樹脂16上に吐出して撥液性のプライマ樹脂層20のパターンを線状又は帯状に形成した後、液滴吐出法により導電性のインクをプライマ樹脂層20上に吐出して、該プライマ樹脂層20上に、配線17のパターンをLED素子13上面の電極部14と搭載部材11上面の電極部15とに跨がって形成して、LED素子13上面の電極部14と搭載部材11上面の電極部15との間を配線17で接続する。
【選択図】図1
Description
搭載部材11は、リードフレーム、回路基板等により形成され、その所定位置に素子搭載凹部12が形成されている。この搭載部材11の素子搭載凹部12の底面中央部には、半導体素子であるLED素子13(発光素子)がダイボンディング(接合)されている。素子搭載凹部12の深さ寸法(高さ寸法)は、LED素子13の高さ寸法とほぼ同一に設定され、素子搭載凹部12内に搭載したLED素子13上面の電極部14が搭載部材11上面の電極部15とほぼ同じ高さとなっている。
その他、本発明は、LED素子以外の半導体素子を搭載部材に搭載した半導体パッケージにも適用して実施できる等、要旨を逸脱しない範囲内で種々変更して実施できることは言うまでもない。
Claims (4)
- 搭載部材に形成した素子搭載凹部内に半導体素子を搭載し、該半導体素子側の電極部と該搭載部材側の電極部との間を配線で接続した半導体パッケージにおいて、
前記素子搭載凹部内の前記半導体素子の周囲の隙間に絶縁性樹脂を充填して該半導体素子側の電極部と前記搭載部材側の電極部との間の配線経路を該絶縁性樹脂で形成し、
前記配線経路上に撥液性のプライマ樹脂層を前記半導体素子側の電極部と前記搭載部材側の電極部とに跨がって形成し、
導電性のインクを前記プライマ樹脂層上に吐出又は印刷して前記配線を形成して前記半導体素子側の電極部と前記搭載部材側の電極部との間を該配線で接続したことを特徴とする半導体パッケージ。 - 前記半導体素子は、発光素子であり、
前記絶縁性樹脂は、透明な絶縁性樹脂であり、
前記プライマ樹脂層は、液滴吐出法でプライマ樹脂インクを前記絶縁性樹脂上に吐出して線状又は帯状に形成されていることを特徴とする請求項1に記載の半導体パッケージ。 - 前記プライマ樹脂層は、前記配線が該プライマ樹脂層からはみ出さないように該配線の線幅よりも製造ばらつき相当値以上太い線幅に形成されていることを特徴とする請求項1又は2に記載の半導体パッケージ。
- 搭載部材に形成した素子搭載凹部内に半導体素子を搭載し、該半導体素子側の電極部と該搭載部材側の電極部との間を配線で接続した半導体パッケージの製造方法において、
前記素子搭載凹部内に前記半導体素子を搭載する工程と、
前記素子搭載凹部内の前記半導体素子の周囲の隙間に絶縁性樹脂を充填して該半導体素子側の電極部と前記搭載部材側の電極部との間の配線経路を該絶縁性樹脂で形成する工程と、
前記配線経路上に撥液性のプライマ樹脂層を前記半導体素子側の電極部と前記搭載部材側の電極部とに跨がって形成する工程と、
導電性のインクを前記プライマ樹脂層上に吐出又は印刷して前記配線を形成して前記半導体素子側の電極部と前記搭載部材側の電極部との間を該配線で接続することを特徴とする半導体パッケージの製造方法。
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JP2011256926A JP6029821B2 (ja) | 2011-11-25 | 2011-11-25 | 発光素子パッケージ及びその製造方法 |
PCT/JP2012/077870 WO2013077144A1 (ja) | 2011-11-25 | 2012-10-29 | 半導体パッケージ及びその製造方法 |
CN201280057767.7A CN103959450B (zh) | 2011-11-25 | 2012-10-29 | 半导体封装件及其制造方法 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014003177A (ja) * | 2012-06-19 | 2014-01-09 | Fuji Mach Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
JP2014003176A (ja) * | 2012-06-19 | 2014-01-09 | Fuji Mach Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
WO2018143037A1 (ja) * | 2017-01-31 | 2018-08-09 | 東レエンジニアリング株式会社 | 配線付き基板および配線形成方法 |
CN110943148A (zh) * | 2018-09-25 | 2020-03-31 | 日亚化学工业株式会社 | 发光装置的制造方法以及发光装置 |
JP2020181941A (ja) * | 2019-04-26 | 2020-11-05 | 日亜化学工業株式会社 | 発光装置、及びその製造方法 |
US11605766B2 (en) | 2019-12-27 | 2023-03-14 | Nichia Corporation | Light-emitting module and method of manufacturing light-emitting module |
CN118039460A (zh) * | 2024-04-15 | 2024-05-14 | 绵阳新能智造科技有限公司 | 一种硅晶片增厚的方法 |
JP7555933B2 (ja) | 2019-01-15 | 2024-09-25 | ソウル バイオシス カンパニー リミテッド | 発光素子パッケージ及びこれを含む表示装置 |
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JP2006278511A (ja) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | 発光素子装置とその製造方法 |
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JP2013145852A (ja) * | 2012-01-16 | 2013-07-25 | Fuji Mach Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
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Patent Citations (7)
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014003177A (ja) * | 2012-06-19 | 2014-01-09 | Fuji Mach Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
JP2014003176A (ja) * | 2012-06-19 | 2014-01-09 | Fuji Mach Mfg Co Ltd | 半導体パッケージ及びその製造方法 |
WO2018143037A1 (ja) * | 2017-01-31 | 2018-08-09 | 東レエンジニアリング株式会社 | 配線付き基板および配線形成方法 |
CN110943148A (zh) * | 2018-09-25 | 2020-03-31 | 日亚化学工业株式会社 | 发光装置的制造方法以及发光装置 |
JP7555933B2 (ja) | 2019-01-15 | 2024-09-25 | ソウル バイオシス カンパニー リミテッド | 発光素子パッケージ及びこれを含む表示装置 |
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JP7393617B2 (ja) | 2019-04-26 | 2023-12-07 | 日亜化学工業株式会社 | 発光装置、及びその製造方法 |
US11605766B2 (en) | 2019-12-27 | 2023-03-14 | Nichia Corporation | Light-emitting module and method of manufacturing light-emitting module |
CN118039460A (zh) * | 2024-04-15 | 2024-05-14 | 绵阳新能智造科技有限公司 | 一种硅晶片增厚的方法 |
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