JP2013110238A5 - - Google Patents
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- Publication number
- JP2013110238A5 JP2013110238A5 JP2011253556A JP2011253556A JP2013110238A5 JP 2013110238 A5 JP2013110238 A5 JP 2013110238A5 JP 2011253556 A JP2011253556 A JP 2011253556A JP 2011253556 A JP2011253556 A JP 2011253556A JP 2013110238 A5 JP2013110238 A5 JP 2013110238A5
- Authority
- JP
- Japan
- Prior art keywords
- side wall
- region
- trench
- silicon carbide
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 description 85
- 238000005530 etching Methods 0.000 description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 51
- 229910010271 silicon carbide Inorganic materials 0.000 description 50
- 238000000034 method Methods 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000005452 bending Methods 0.000 description 19
- 239000013078 crystal Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 241000526657 Microchloa Species 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011253556A JP5806600B2 (ja) | 2011-11-21 | 2011-11-21 | 炭化珪素半導体装置の製造方法 |
| EP12851689.5A EP2784821B1 (en) | 2011-11-21 | 2012-09-12 | Silicon carbide semiconductor device and method for manufacturing the same |
| CN201280051725.2A CN103890952B (zh) | 2011-11-21 | 2012-09-12 | 碳化硅半导体器件及其制造方法 |
| PCT/JP2012/073284 WO2013077064A1 (ja) | 2011-11-21 | 2012-09-12 | 炭化珪素半導体装置およびその製造方法 |
| US13/658,672 US9293549B2 (en) | 2011-11-21 | 2012-10-23 | Silicon carbide semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011253556A JP5806600B2 (ja) | 2011-11-21 | 2011-11-21 | 炭化珪素半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013110238A JP2013110238A (ja) | 2013-06-06 |
| JP2013110238A5 true JP2013110238A5 (enExample) | 2014-08-28 |
| JP5806600B2 JP5806600B2 (ja) | 2015-11-10 |
Family
ID=48425954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011253556A Active JP5806600B2 (ja) | 2011-11-21 | 2011-11-21 | 炭化珪素半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9293549B2 (enExample) |
| EP (1) | EP2784821B1 (enExample) |
| JP (1) | JP5806600B2 (enExample) |
| CN (1) | CN103890952B (enExample) |
| WO (1) | WO2013077064A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2013031172A1 (ja) | 2011-08-26 | 2015-03-23 | 国立大学法人 奈良先端科学技術大学院大学 | ＳｉＣ半導体素子およびその製造方法 |
| JP6065303B2 (ja) | 2012-06-15 | 2017-01-25 | ローム株式会社 | スイッチングデバイス |
| WO2015093406A1 (ja) * | 2013-12-20 | 2015-06-25 | 日本碍子株式会社 | 窒化ガリウム層を含む基板およびその製造方法 |
| JP6183224B2 (ja) * | 2014-01-16 | 2017-08-23 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP6357869B2 (ja) * | 2014-05-20 | 2018-07-18 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP2015220408A (ja) * | 2014-05-20 | 2015-12-07 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP2016048747A (ja) * | 2014-08-28 | 2016-04-07 | 株式会社豊田中央研究所 | トレンチゲート電極を備えている半導体装置 |
| JP6766512B2 (ja) * | 2016-08-05 | 2020-10-14 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP2021190647A (ja) * | 2020-06-04 | 2021-12-13 | 豊田合成株式会社 | 半導体装置とその製造方法 |
| JP7694255B2 (ja) * | 2021-08-25 | 2025-06-18 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| TWI863611B (zh) * | 2023-10-04 | 2024-11-21 | 鴻揚半導體股份有限公司 | 半導體結構製造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5436174A (en) * | 1993-01-25 | 1995-07-25 | North Carolina State University | Method of forming trenches in monocrystalline silicon carbide |
| JP3490857B2 (ja) * | 1996-11-25 | 2004-01-26 | 三洋電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP3976374B2 (ja) * | 1997-07-11 | 2007-09-19 | 三菱電機株式会社 | トレンチｍｏｓゲート構造を有する半導体装置及びその製造方法 |
| JP2000068505A (ja) * | 1998-08-20 | 2000-03-03 | Toshiba Corp | 半導体装置およびその製造方法 |
| JP5058406B2 (ja) * | 2000-10-31 | 2012-10-24 | ローム株式会社 | 半導体装置の製造方法 |
| WO2002089196A2 (en) * | 2001-04-28 | 2002-11-07 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor devices and their manufacture |
| JP4961668B2 (ja) * | 2005-01-11 | 2012-06-27 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2006351744A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体装置の製造方法 |
| JP5017823B2 (ja) * | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
| JP5017855B2 (ja) * | 2005-12-14 | 2012-09-05 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2007227649A (ja) * | 2006-02-23 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP5167593B2 (ja) * | 2006-03-23 | 2013-03-21 | 富士電機株式会社 | 半導体装置 |
| JP4450241B2 (ja) * | 2007-03-20 | 2010-04-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5309587B2 (ja) | 2008-02-07 | 2013-10-09 | 富士電機株式会社 | 炭化珪素半導体基板のトレンチエッチング方法 |
| JP4877286B2 (ja) * | 2008-07-08 | 2012-02-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2010182857A (ja) * | 2009-02-05 | 2010-08-19 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| US8754422B2 (en) | 2009-10-23 | 2014-06-17 | Panasonic Corporation | Semiconductor device and process for production thereof |
| JP5699878B2 (ja) * | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
| JP5834801B2 (ja) * | 2011-11-16 | 2015-12-24 | 住友電気工業株式会社 | 半導体装置の製造方法および半導体装置 |
-
2011
- 2011-11-21 JP JP2011253556A patent/JP5806600B2/ja active Active
-
2012
- 2012-09-12 CN CN201280051725.2A patent/CN103890952B/zh active Active
- 2012-09-12 EP EP12851689.5A patent/EP2784821B1/en active Active
- 2012-09-12 WO PCT/JP2012/073284 patent/WO2013077064A1/ja not_active Ceased
- 2012-10-23 US US13/658,672 patent/US9293549B2/en active Active
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