CN103890952B - 碳化硅半导体器件及其制造方法 - Google Patents

碳化硅半导体器件及其制造方法 Download PDF

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Publication number
CN103890952B
CN103890952B CN201280051725.2A CN201280051725A CN103890952B CN 103890952 B CN103890952 B CN 103890952B CN 201280051725 A CN201280051725 A CN 201280051725A CN 103890952 B CN103890952 B CN 103890952B
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China
Prior art keywords
silicon carbide
region
trench
layer
side wall
Prior art date
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CN201280051725.2A
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Chinese (zh)
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CN103890952A (zh
Inventor
增田健良
畑山智亮
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NAT UNIVERSITY CORP NARA I OF
Sumitomo Electric Industries Ltd
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NAT UNIVERSITY CORP NARA I OF
Sumitomo Electric Industries Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201280051725.2A 2011-11-21 2012-09-12 碳化硅半导体器件及其制造方法 Active CN103890952B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-253556 2011-11-21
JP2011253556A JP5806600B2 (ja) 2011-11-21 2011-11-21 炭化珪素半導体装置の製造方法
PCT/JP2012/073284 WO2013077064A1 (ja) 2011-11-21 2012-09-12 炭化珪素半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN103890952A CN103890952A (zh) 2014-06-25
CN103890952B true CN103890952B (zh) 2016-12-07

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US (1) US9293549B2 (enExample)
EP (1) EP2784821B1 (enExample)
JP (1) JP5806600B2 (enExample)
CN (1) CN103890952B (enExample)
WO (1) WO2013077064A1 (enExample)

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* Cited by examiner, † Cited by third party
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KR101584023B1 (ko) 2011-08-26 2016-01-08 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠 ＳｉＣ반도체소자 및 그 제조방법
JP6065303B2 (ja) 2012-06-15 2017-01-25 ローム株式会社 スイッチングデバイス
KR101723780B1 (ko) * 2013-12-20 2017-04-05 엔지케이 인슐레이터 엘티디 질화갈륨층을 포함하는 기판 및 그 제조 방법
JP6183224B2 (ja) * 2014-01-16 2017-08-23 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2015220408A (ja) * 2014-05-20 2015-12-07 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP6357869B2 (ja) 2014-05-20 2018-07-18 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP2016048747A (ja) * 2014-08-28 2016-04-07 株式会社豊田中央研究所 トレンチゲート電極を備えている半導体装置
JP6766512B2 (ja) * 2016-08-05 2020-10-14 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2021190647A (ja) * 2020-06-04 2021-12-13 豊田合成株式会社 半導体装置とその製造方法
JP7694255B2 (ja) * 2021-08-25 2025-06-18 住友電気工業株式会社 炭化珪素半導体装置
TWI863611B (zh) * 2023-10-04 2024-11-21 鴻揚半導體股份有限公司 半導體結構製造方法

Citations (5)

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JP2002141407A (ja) * 2000-10-31 2002-05-17 Rohm Co Ltd 半導体装置およびその製造方法
US20060154438A1 (en) * 2005-01-11 2006-07-13 Daisuke Kishimoto Method for manufacturing semiconductor device with trenches in substrate surface
US20070015333A1 (en) * 2005-06-15 2007-01-18 Fuji Electric Holdings Co., Ltd. Method for manufacturing silicon carbide semiconductor devices
US20100006861A1 (en) * 2008-07-08 2010-01-14 Denso Corporation Silicon carbide semiconductor device and manufacturing method of the same
US20100193862A1 (en) * 2009-02-05 2010-08-05 Nec Electronics Corporation Semiconductor device and method of manufacturing the same

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US5436174A (en) * 1993-01-25 1995-07-25 North Carolina State University Method of forming trenches in monocrystalline silicon carbide
JP3490857B2 (ja) * 1996-11-25 2004-01-26 三洋電機株式会社 半導体装置及び半導体装置の製造方法
JP3976374B2 (ja) 1997-07-11 2007-09-19 三菱電機株式会社 トレンチｍｏｓゲート構造を有する半導体装置及びその製造方法
JP2000068505A (ja) * 1998-08-20 2000-03-03 Toshiba Corp 半導体装置およびその製造方法
ATE358891T1 (de) * 2001-04-28 2007-04-15 Koninkl Philips Electronics Nv Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung
JP5017823B2 (ja) * 2005-09-12 2012-09-05 富士電機株式会社 半導体素子の製造方法
JP5017855B2 (ja) * 2005-12-14 2012-09-05 富士電機株式会社 半導体装置の製造方法
JP2007227649A (ja) * 2006-02-23 2007-09-06 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5167593B2 (ja) * 2006-03-23 2013-03-21 富士電機株式会社 半導体装置
JP4450241B2 (ja) * 2007-03-20 2010-04-14 株式会社デンソー 炭化珪素半導体装置の製造方法
JP5309587B2 (ja) 2008-02-07 2013-10-09 富士電機株式会社 炭化珪素半導体基板のトレンチエッチング方法
US8754422B2 (en) 2009-10-23 2014-06-17 Panasonic Corporation Semiconductor device and process for production thereof
JP5699878B2 (ja) * 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP5834801B2 (ja) * 2011-11-16 2015-12-24 住友電気工業株式会社 半導体装置の製造方法および半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141407A (ja) * 2000-10-31 2002-05-17 Rohm Co Ltd 半導体装置およびその製造方法
US20060154438A1 (en) * 2005-01-11 2006-07-13 Daisuke Kishimoto Method for manufacturing semiconductor device with trenches in substrate surface
US20070015333A1 (en) * 2005-06-15 2007-01-18 Fuji Electric Holdings Co., Ltd. Method for manufacturing silicon carbide semiconductor devices
US20100006861A1 (en) * 2008-07-08 2010-01-14 Denso Corporation Silicon carbide semiconductor device and manufacturing method of the same
US20100193862A1 (en) * 2009-02-05 2010-08-05 Nec Electronics Corporation Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
CN103890952A (zh) 2014-06-25
JP5806600B2 (ja) 2015-11-10
EP2784821A4 (en) 2015-07-15
WO2013077064A1 (ja) 2013-05-30
US9293549B2 (en) 2016-03-22
EP2784821A1 (en) 2014-10-01
US20130126904A1 (en) 2013-05-23
EP2784821B1 (en) 2019-12-04
JP2013110238A (ja) 2013-06-06

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