JP2013110161A5 - - Google Patents

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Publication number
JP2013110161A5
JP2013110161A5 JP2011251885A JP2011251885A JP2013110161A5 JP 2013110161 A5 JP2013110161 A5 JP 2013110161A5 JP 2011251885 A JP2011251885 A JP 2011251885A JP 2011251885 A JP2011251885 A JP 2011251885A JP 2013110161 A5 JP2013110161 A5 JP 2013110161A5
Authority
JP
Japan
Prior art keywords
substrate
insulating film
oxide film
dielectric constant
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011251885A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013110161A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011251885A priority Critical patent/JP2013110161A/ja
Priority claimed from JP2011251885A external-priority patent/JP2013110161A/ja
Priority to PCT/JP2012/079110 priority patent/WO2013073468A1/ja
Priority to TW101142609A priority patent/TWI495007B/zh
Publication of JP2013110161A publication Critical patent/JP2013110161A/ja
Priority to US14/279,912 priority patent/US20140252555A1/en
Publication of JP2013110161A5 publication Critical patent/JP2013110161A5/ja
Pending legal-status Critical Current

Links

JP2011251885A 2011-11-17 2011-11-17 素子形成用基板及びその製造方法 Pending JP2013110161A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011251885A JP2013110161A (ja) 2011-11-17 2011-11-17 素子形成用基板及びその製造方法
PCT/JP2012/079110 WO2013073468A1 (ja) 2011-11-17 2012-11-09 素子形成用基板及びその製造方法
TW101142609A TWI495007B (zh) 2011-11-17 2012-11-15 元件形成用基板及其製造方法
US14/279,912 US20140252555A1 (en) 2011-11-17 2014-05-16 Substrate for forming elements, and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011251885A JP2013110161A (ja) 2011-11-17 2011-11-17 素子形成用基板及びその製造方法

Publications (2)

Publication Number Publication Date
JP2013110161A JP2013110161A (ja) 2013-06-06
JP2013110161A5 true JP2013110161A5 (enExample) 2015-01-08

Family

ID=48429528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011251885A Pending JP2013110161A (ja) 2011-11-17 2011-11-17 素子形成用基板及びその製造方法

Country Status (4)

Country Link
US (1) US20140252555A1 (enExample)
JP (1) JP2013110161A (enExample)
TW (1) TWI495007B (enExample)
WO (1) WO2013073468A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3155656A4 (en) * 2014-06-13 2018-02-14 Intel Corporation Surface encapsulation for wafer bonding
CN106611740B (zh) * 2015-10-27 2020-05-12 中国科学院微电子研究所 衬底及其制造方法
US11502106B2 (en) * 2020-02-11 2022-11-15 Globalfoundries U.S. Inc. Multi-layered substrates of semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050252449A1 (en) * 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
FR2896619B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite a proprietes electriques ameliorees
JP4504390B2 (ja) * 2007-02-27 2010-07-14 株式会社東芝 相補型半導体装置
JP4768788B2 (ja) * 2008-09-12 2011-09-07 株式会社東芝 半導体装置およびその製造方法
JP2010232568A (ja) * 2009-03-29 2010-10-14 Univ Of Tokyo 半導体デバイス及びその製造方法
JP5235784B2 (ja) * 2009-05-25 2013-07-10 パナソニック株式会社 半導体装置
US8557679B2 (en) * 2010-06-30 2013-10-15 Corning Incorporated Oxygen plasma conversion process for preparing a surface for bonding
US8772873B2 (en) * 2011-01-24 2014-07-08 Tsinghua University Ge-on-insulator structure and method for forming the same

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