JP2013102003A - 集積型半導体レーザ素子 - Google Patents
集積型半導体レーザ素子 Download PDFInfo
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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Abstract
【解決手段】互いに異なる発振波長で単一モード発振する複数の分布帰還型の半導体レーザと、前記複数の半導体レーザからの出力光がそれぞれ入力される、該半導体レーザと同じ数の入力ポートを有し、該出力光を合流させて出力させることができる光合流器と、前記光合流器からの出力光を増幅する半導体光増幅器と、が集積され、前記半導体レーザの個数をN、前記各半導体レーザの共振器長および出力されるレーザ光のスペクトル線幅をそれぞれLdfb、Δν0とし、前記半導体光増幅器の増幅器長、増幅率、および出力される増幅されたレーザ光のスペクトル線幅をそれぞれLsoa、A、Δνとし、Δν/Δν0をRとすると、所定の関係式が成り立つ。
【選択図】図1
Description
図1は、実施の形態に係る集積型半導体レーザ素子の模式的な平面図である。図1に示すように、本実施の形態に係る集積型半導体レーザ素子100は、それぞれがメサ構造を有する、N個のDFBレーザ11−1〜11−N(Nは2以上の整数)と、N個の光導波路12−1〜12−Nと、光合流器13と、半導体光増幅器(SOA)14とを一つの半導体基板上に集積し、埋め込み部15により埋め込んだ構造を有する。DFBレーザ11−1〜11−N間の埋め込み部15には、トレンチ溝16−1〜16−M(M=N―1)を設けている。
12−1〜12−N 光導波路
13 光合流器
13a 出力ポート
14 SOA
14a 出力端
15 埋め込み部
16−1〜16−M トレンチ溝
21 基板
22 n型InPバッファ層
23 下部InGaAsP−SCH層
24 活性層
25 上部InGaAsP−SCH層
26 InPスペーサ層
27 グレーティング層
28 p型InP層
30 InGaAsPコア層
31 i型InP層
32 p型InP埋め込み層
33 n型InP電流ブロッキング層
34 p型InPクラッド層
35 InGaAsコンタクト層
38 SiN保護膜
39 p側電極
40 n側電極
100 集積型半導体レーザ素子
L1、L2 長さ
L3、L4 線
Claims (5)
- 互いに異なる発振波長で単一モード発振する複数の分布帰還型の半導体レーザと、
前記複数の半導体レーザからの出力光がそれぞれ入力される、該半導体レーザと同じ数の入力ポートを有し、該出力光を合流させて出力させることができる光合流器と、
前記光合流器からの出力光を増幅する半導体光増幅器と、
が集積され、前記半導体レーザの個数をN、前記各半導体レーザの共振器長および出力されるレーザ光のスペクトル線幅をそれぞれLdfb、Δν0とし、前記半導体光増幅器の増幅器長、増幅率、および出力される増幅されたレーザ光のスペクトル線幅をそれぞれLsoa、A、Δνとし、Δν/Δν0をRとすると、以下の式(1)が成り立つことを特徴とする集積型半導体レーザ素子。
- 前記各半導体レーザは、当該各半導体レーザからの前記出力光のスペクトル線幅が250kHz以下になるように、当該各半導体レーザにおける回折格子の結合係数と共振器長との積の値が設定されており、かつRは2であることを特徴とする請求項1に記載の集積型半導体レーザ素子。
- 前記各半導体レーザの共振器長が1200μm以上であることを特徴とする請求項1または2に記載の集積型半導体レーザ素子。
- 前記各半導体レーザにおける回折格子の結合係数と共振器長との積が略1.5であることを特徴とする1〜3のいずれか一つに記載の集積型半導体レーザ素子。
- 前記半導体光増幅器からの出力光の強度が50mW以上であることを特徴とする請求項1〜4のいずれか一つに記載の集積型半導体レーザ素子。
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JP2011243924A JP5100881B1 (ja) | 2011-11-07 | 2011-11-07 | 集積型半導体レーザ素子 |
PCT/JP2012/077777 WO2013069483A1 (ja) | 2011-11-07 | 2012-10-26 | 集積型半導体レーザ素子 |
US13/960,429 US8787420B2 (en) | 2011-11-07 | 2013-08-06 | Integrated semiconductor laser element |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015065406A (ja) * | 2013-08-30 | 2015-04-09 | 三菱電機株式会社 | 波長可変光源および波長可変光源モジュール |
WO2015099176A1 (ja) * | 2013-12-26 | 2015-07-02 | 古河電気工業株式会社 | 半導体レーザアレイ、半導体レーザ素子、半導体レーザモジュール、および波長可変レーザアセンブリ |
WO2015122367A1 (ja) * | 2014-02-13 | 2015-08-20 | 古河電気工業株式会社 | 集積型半導体レーザ素子および半導体レーザモジュール |
JP2016072608A (ja) * | 2014-09-30 | 2016-05-09 | 三菱電機株式会社 | 半導体レーザおよびこれを備える光集積光源 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5228363B2 (ja) | 2007-04-18 | 2013-07-03 | ソニー株式会社 | 発光素子 |
JP5567226B2 (ja) | 2012-05-31 | 2014-08-06 | 古河電気工業株式会社 | 半導体レーザモジュール |
JP5795126B2 (ja) * | 2013-02-18 | 2015-10-14 | 古河電気工業株式会社 | 半導体レーザ素子、集積型半導体レーザ素子、および、半導体レーザ素子の製造方法 |
CN104158085B (zh) * | 2014-08-30 | 2017-04-12 | 太原理工大学 | 无时延、频谱平坦、宽带光子集成混沌半导体激光器 |
JP6507912B2 (ja) * | 2015-07-30 | 2019-05-08 | 三菱電機株式会社 | 半導体受光素子 |
DE112018004929T5 (de) | 2017-09-08 | 2020-06-18 | The Regents Of The University Of Michigan | Elektromagnetischer energiewandler |
US11978436B2 (en) | 2022-06-03 | 2024-05-07 | Apple Inc. | Application vocabulary integration with a digital assistant |
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JP2004349692A (ja) * | 2003-04-28 | 2004-12-09 | Furukawa Electric Co Ltd:The | レーザ装置 |
JP2005317695A (ja) * | 2004-04-28 | 2005-11-10 | Furukawa Electric Co Ltd:The | レーザ装置 |
JP2011035060A (ja) * | 2009-07-30 | 2011-02-17 | Furukawa Electric Co Ltd:The | 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム |
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WO2003032547A2 (en) * | 2001-10-09 | 2003-04-17 | Infinera Corporation | Transmitter photonic integrated circuit |
JP4330376B2 (ja) * | 2002-10-22 | 2009-09-16 | 富士通株式会社 | 光半導体装置及びその駆動方法 |
JP5306942B2 (ja) * | 2009-08-21 | 2013-10-02 | 日本電信電話株式会社 | 半導体レーザ及び光モジュール |
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JP2004349692A (ja) * | 2003-04-28 | 2004-12-09 | Furukawa Electric Co Ltd:The | レーザ装置 |
JP2005317695A (ja) * | 2004-04-28 | 2005-11-10 | Furukawa Electric Co Ltd:The | レーザ装置 |
JP2011035060A (ja) * | 2009-07-30 | 2011-02-17 | Furukawa Electric Co Ltd:The | 集積型半導体レーザ素子および半導体レーザモジュールならびに光伝送システム |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015065406A (ja) * | 2013-08-30 | 2015-04-09 | 三菱電機株式会社 | 波長可変光源および波長可変光源モジュール |
WO2015099176A1 (ja) * | 2013-12-26 | 2015-07-02 | 古河電気工業株式会社 | 半導体レーザアレイ、半導体レーザ素子、半導体レーザモジュール、および波長可変レーザアセンブリ |
JPWO2015099176A1 (ja) * | 2013-12-26 | 2017-03-23 | 古河電気工業株式会社 | 半導体レーザアレイ、半導体レーザ素子、半導体レーザモジュール、および波長可変レーザアセンブリ |
JP2019083351A (ja) * | 2013-12-26 | 2019-05-30 | 古河電気工業株式会社 | 半導体光増幅器、半導体レーザモジュール、および波長可変レーザアセンブリ |
US11322912B2 (en) | 2013-12-26 | 2022-05-03 | Furukawa Electric Co., Ltd. | Semiconductor laser array, semiconductor laser element, semiconductor laser module, and wavelength-variable laser assembly |
WO2015122367A1 (ja) * | 2014-02-13 | 2015-08-20 | 古河電気工業株式会社 | 集積型半導体レーザ素子および半導体レーザモジュール |
JPWO2015122367A1 (ja) * | 2014-02-13 | 2017-03-30 | 古河電気工業株式会社 | 集積型半導体レーザ素子および半導体レーザモジュール |
JP2016072608A (ja) * | 2014-09-30 | 2016-05-09 | 三菱電機株式会社 | 半導体レーザおよびこれを備える光集積光源 |
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US20130315273A1 (en) | 2013-11-28 |
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