JP2013060663A5 - - Google Patents

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JP2013060663A5
JP2013060663A5 JP2012220284A JP2012220284A JP2013060663A5 JP 2013060663 A5 JP2013060663 A5 JP 2013060663A5 JP 2012220284 A JP2012220284 A JP 2012220284A JP 2012220284 A JP2012220284 A JP 2012220284A JP 2013060663 A5 JP2013060663 A5 JP 2013060663A5
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group
branched
antimony
linear
tris
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JP2012220284A
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JP5778648B2 (ja
JP2013060663A (ja
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Priority claimed from US12/355,325 external-priority patent/US8318252B2/en
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JP2012220284A 2008-01-28 2012-10-02 シリルアンチモン前駆体及びそれを用いた原子層堆積（ａｌｄ）方法 Expired - Fee Related JP5778648B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2398908P 2008-01-28 2008-01-28
US61/023,989 2008-01-28
US12/355,325 US8318252B2 (en) 2008-01-28 2009-01-16 Antimony precursors for GST films in ALD/CVD processes
US12/355,325 2009-01-16

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009016913A Division JP5350819B2 (ja) 2008-01-28 2009-01-28 ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法

Publications (3)

Publication Number Publication Date
JP2013060663A JP2013060663A (ja) 2013-04-04
JP2013060663A5 true JP2013060663A5 (https=) 2014-04-24
JP5778648B2 JP5778648B2 (ja) 2015-09-16

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JP2009016913A Expired - Fee Related JP5350819B2 (ja) 2008-01-28 2009-01-28 ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法
JP2012220284A Expired - Fee Related JP5778648B2 (ja) 2008-01-28 2012-10-02 シリルアンチモン前駆体及びそれを用いた原子層堆積（ａｌｄ）方法

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JP2009016913A Expired - Fee Related JP5350819B2 (ja) 2008-01-28 2009-01-28 ゲルマニウム−アンチモン−テルル合金膜を製造するための原子層堆積（ａｌｄ）方法

Country Status (6)

Country Link
US (1) US8318252B2 (https=)
EP (1) EP2083096B1 (https=)
JP (2) JP5350819B2 (https=)
KR (1) KR101068013B1 (https=)
CN (1) CN101497999B (https=)
TW (1) TWI382104B (https=)

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CN102352488B (zh) 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
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US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
JP5718808B2 (ja) * 2008-04-25 2015-05-13 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． テルルおよびセレン薄膜のａｌｄのための前駆体の合成および使用
US8697486B2 (en) 2009-04-15 2014-04-15 Micro Technology, Inc. Methods of forming phase change materials and methods of forming phase change memory circuitry
JP5731519B2 (ja) * 2009-10-26 2015-06-10 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． Ｖａ族元素を含む薄膜のａｌｄのための前駆体の合成及び使用
US20110108792A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Single Crystal Phase Change Material
US8148197B2 (en) 2010-07-27 2012-04-03 Micron Technology, Inc. Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same
TWI450999B (zh) * 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
JP5780981B2 (ja) * 2012-03-02 2015-09-16 東京エレクトロン株式会社 ゲルマニウム薄膜の成膜方法
KR20140021979A (ko) * 2012-08-13 2014-02-21 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 Ald/cvd 공정에서 gst 필름을 위한 전구체
US9214630B2 (en) * 2013-04-11 2015-12-15 Air Products And Chemicals, Inc. Method of making a multicomponent film
US10036089B2 (en) * 2013-06-26 2018-07-31 Applied Materials, Inc. Methods of depositing a metal alloy film
RU2016135995A (ru) * 2014-03-04 2018-04-04 Пикосан Ой Атомно-слоевое осаждение германия или оксида германия
CN104341355B (zh) * 2014-10-22 2017-02-08 江南大学 用于相变存储材料的氨基嘧啶Ge(Ⅱ)前质体及其制备方法
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9929006B2 (en) * 2016-07-20 2018-03-27 Micron Technology, Inc. Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures
TWI859354B (zh) 2019-10-29 2024-10-21 德商馬克專利公司 分子層之製造方法及包含彼之電子組件

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SG171683A1 (en) * 2006-05-12 2011-06-29 Advanced Tech Materials Low temperature deposition of phase change memory materials
KR100780865B1 (ko) * 2006-07-19 2007-11-30 삼성전자주식회사 상변화막을 포함하는 반도체 소자의 형성 방법
JP2010506408A (ja) * 2006-10-05 2010-02-25 エーエスエム アメリカ インコーポレイテッド 金属シリケート膜のａｌｄ
CN102352488B (zh) * 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
US8454928B2 (en) * 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
SG178736A1 (en) * 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
US7960205B2 (en) * 2007-11-27 2011-06-14 Air Products And Chemicals, Inc. Tellurium precursors for GST films in an ALD or CVD process
JP5718808B2 (ja) * 2008-04-25 2015-05-13 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． テルルおよびセレン薄膜のａｌｄのための前駆体の合成および使用

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