TWI382104B - 於ａｌｄ／ｃｖｄ製程中作為ｇｓｔ膜的銻前驅物 - Google Patents
於ａｌｄ／ｃｖｄ製程中作為ｇｓｔ膜的銻前驅物 Download PDFInfo
- Publication number
- TWI382104B TWI382104B TW098103029A TW98103029A TWI382104B TW I382104 B TWI382104 B TW I382104B TW 098103029 A TW098103029 A TW 098103029A TW 98103029 A TW98103029 A TW 98103029A TW I382104 B TWI382104 B TW I382104B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- branched
- linear
- ruthenium
- independently
- Prior art date
Links
- 239000002243 precursor Substances 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 25
- 229910052787 antimony Inorganic materials 0.000 title 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title 1
- 229910052707 ruthenium Inorganic materials 0.000 claims description 37
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 34
- 125000003118 aryl group Chemical group 0.000 claims description 31
- 125000004432 carbon atom Chemical group C* 0.000 claims description 31
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 29
- 125000003342 alkenyl group Chemical group 0.000 claims description 21
- 238000000231 atomic layer deposition Methods 0.000 claims description 19
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 18
- -1 decylene ruthenium Chemical compound 0.000 claims description 18
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- 239000007983 Tris buffer Substances 0.000 claims description 9
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 229910000929 Ru alloy Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- WMOJAWPGEQWAMM-UHFFFAOYSA-N [Ir].[Ru].[Ru] Chemical compound [Ir].[Ru].[Ru] WMOJAWPGEQWAMM-UHFFFAOYSA-N 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 3
- 150000001924 cycloalkanes Chemical class 0.000 claims description 3
- FFGPTBGBLSHEPO-UHFFFAOYSA-N carbamazepine Chemical group C1=CC2=CC=CC=C2N(C(=O)N)C2=CC=CC=C21 FFGPTBGBLSHEPO-UHFFFAOYSA-N 0.000 claims description 2
- 229960000623 carbamazepine Drugs 0.000 claims description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 claims 2
- 229960003105 metformin Drugs 0.000 claims 2
- SFFUHUGVJGVRCJ-UHFFFAOYSA-N CCCCCCCCCC.[Ru] Chemical compound CCCCCCCCCC.[Ru] SFFUHUGVJGVRCJ-UHFFFAOYSA-N 0.000 claims 1
- MDMXQSXFPASRFQ-UHFFFAOYSA-N [Ru].[Ru].[Re] Chemical compound [Ru].[Ru].[Re] MDMXQSXFPASRFQ-UHFFFAOYSA-N 0.000 claims 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 7
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229910052762 osmium Inorganic materials 0.000 description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 150000001298 alcohols Chemical class 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 3
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000005292 vacuum distillation Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CJEAKKMNOSJYMY-UHFFFAOYSA-N 2-chloro-2-methylundecane Chemical compound CCCCCCCCCC(C)(C)Cl CJEAKKMNOSJYMY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical group NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 2
- 229910000103 lithium hydride Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229960000485 methotrexate Drugs 0.000 description 2
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 150000003303 ruthenium Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- LBAANPWUYHUCJL-UHFFFAOYSA-N 1,2-dimethylhydrazine hydrazine Chemical compound CNNC.NN LBAANPWUYHUCJL-UHFFFAOYSA-N 0.000 description 1
- ZQBSPSZMRYBLLZ-UHFFFAOYSA-N CC(CCCCCCCCCCl)(C)C Chemical compound CC(CCCCCCCCCCl)(C)C ZQBSPSZMRYBLLZ-UHFFFAOYSA-N 0.000 description 1
- KSSJBGNOJJETTC-UHFFFAOYSA-N COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC Chemical compound COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC KSSJBGNOJJETTC-UHFFFAOYSA-N 0.000 description 1
- FBOZXECLQNJBKD-ZDUSSCGKSA-N L-methotrexate Chemical compound C=1N=C2N=C(N)N=C(N)C2=NC=1CN(C)C1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 FBOZXECLQNJBKD-ZDUSSCGKSA-N 0.000 description 1
- KFMLSKLCIQLEQK-UHFFFAOYSA-N [SiH3].[Sb] Chemical compound [SiH3].[Sb] KFMLSKLCIQLEQK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- CVXBEEMKQHEXEN-UHFFFAOYSA-N carbaryl Chemical compound C1=CC=C2C(OC(=O)NC)=CC=CC2=C1 CVXBEEMKQHEXEN-UHFFFAOYSA-N 0.000 description 1
- 229960005286 carbaryl Drugs 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000003800 germyl group Chemical group [H][Ge]([H])([H])[*] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- JKUUTODNPMRHHZ-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)germyl]methanamine Chemical compound CN(C)[Ge](N(C)C)(N(C)C)N(C)C JKUUTODNPMRHHZ-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- IOJMHYLAOTZEKB-UHFFFAOYSA-N tetrakis(dimethylamino)phosphanium Chemical compound CN(C)[P+](N(C)C)(N(C)C)N(C)C IOJMHYLAOTZEKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/20—Silicates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G17/00—Compounds of germanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G30/00—Compounds of antimony
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/90—Antimony compounds
- C07F9/902—Compounds without antimony-carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2398908P | 2008-01-28 | 2008-01-28 | |
| US12/355,325 US8318252B2 (en) | 2008-01-28 | 2009-01-16 | Antimony precursors for GST films in ALD/CVD processes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200934885A TW200934885A (en) | 2009-08-16 |
| TWI382104B true TWI382104B (zh) | 2013-01-11 |
Family
ID=40577856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098103029A TWI382104B (zh) | 2008-01-28 | 2009-01-23 | 於ａｌｄ／ｃｖｄ製程中作為ｇｓｔ膜的銻前驅物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8318252B2 (https=) |
| EP (1) | EP2083096B1 (https=) |
| JP (2) | JP5350819B2 (https=) |
| KR (1) | KR101068013B1 (https=) |
| CN (1) | CN101497999B (https=) |
| TW (1) | TWI382104B (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG171683A1 (en) | 2006-05-12 | 2011-06-29 | Advanced Tech Materials | Low temperature deposition of phase change memory materials |
| CN102352488B (zh) | 2006-11-02 | 2016-04-06 | 诚实公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| JP5718808B2 (ja) * | 2008-04-25 | 2015-05-13 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | テルルおよびセレン薄膜のａｌｄのための前駆体の合成および使用 |
| US8697486B2 (en) | 2009-04-15 | 2014-04-15 | Micro Technology, Inc. | Methods of forming phase change materials and methods of forming phase change memory circuitry |
| JP5731519B2 (ja) * | 2009-10-26 | 2015-06-10 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | Ｖａ族元素を含む薄膜のａｌｄのための前駆体の合成及び使用 |
| US20110108792A1 (en) * | 2009-11-11 | 2011-05-12 | International Business Machines Corporation | Single Crystal Phase Change Material |
| US8148197B2 (en) | 2010-07-27 | 2012-04-03 | Micron Technology, Inc. | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same |
| TWI450999B (zh) * | 2011-08-19 | 2014-09-01 | Tokyo Electron Ltd | Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium |
| JP5780981B2 (ja) * | 2012-03-02 | 2015-09-16 | 東京エレクトロン株式会社 | ゲルマニウム薄膜の成膜方法 |
| KR20140021979A (ko) * | 2012-08-13 | 2014-02-21 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Ald/cvd 공정에서 gst 필름을 위한 전구체 |
| US9214630B2 (en) * | 2013-04-11 | 2015-12-15 | Air Products And Chemicals, Inc. | Method of making a multicomponent film |
| US10036089B2 (en) * | 2013-06-26 | 2018-07-31 | Applied Materials, Inc. | Methods of depositing a metal alloy film |
| RU2016135995A (ru) * | 2014-03-04 | 2018-04-04 | Пикосан Ой | Атомно-слоевое осаждение германия или оксида германия |
| CN104341355B (zh) * | 2014-10-22 | 2017-02-08 | 江南大学 | 用于相变存储材料的氨基嘧啶Ge(Ⅱ)前质体及其制备方法 |
| US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
| US9929006B2 (en) * | 2016-07-20 | 2018-03-27 | Micron Technology, Inc. | Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures |
| TWI859354B (zh) | 2019-10-29 | 2024-10-21 | 德商馬克專利公司 | 分子層之製造方法及包含彼之電子組件 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006182781A (ja) * | 2004-12-27 | 2006-07-13 | Samsung Electronics Co Ltd | ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 |
| WO2007133837A2 (en) * | 2006-05-12 | 2007-11-22 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10152493A (ja) * | 1996-09-30 | 1998-06-09 | Shin Etsu Chem Co Ltd | アルキルハロシランの製造方法 |
| AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| KR100642634B1 (ko) * | 2004-06-29 | 2006-11-10 | 삼성전자주식회사 | 게이트 상전이막 패턴을 갖는 피이. 램들 및 그 형성방법들 |
| KR100566699B1 (ko) * | 2004-08-17 | 2006-04-03 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100655796B1 (ko) * | 2004-08-17 | 2006-12-11 | 삼성전자주식회사 | 상변화 메모리 장치 및 그 제조 방법 |
| KR100652378B1 (ko) * | 2004-09-08 | 2006-12-01 | 삼성전자주식회사 | 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법 |
| JP2006124262A (ja) * | 2004-11-01 | 2006-05-18 | Dainippon Printing Co Ltd | ＩｎＳｂナノ粒子 |
| KR100618879B1 (ko) * | 2004-12-27 | 2006-09-01 | 삼성전자주식회사 | 게르마늄 전구체, 이를 이용하여 형성된 ｇｓｔ 박막,상기 박막의 제조 방법 및 상변화 메모리 소자 |
| KR100585175B1 (ko) * | 2005-01-31 | 2006-05-30 | 삼성전자주식회사 | 화학 기상 증착법에 의한 ＧｅＳｂＴｅ 박막의 제조방법 |
| KR100688532B1 (ko) * | 2005-02-14 | 2007-03-02 | 삼성전자주식회사 | 텔루르 전구체, 이를 이용하여 제조된 Ｔｅ-함유 칼코게나이드(ｃｈａｌｃｏｇｅｎｉｄｅ) 박막, 상기 박막의 제조방법 및 상변화 메모리 소자 |
| KR100780865B1 (ko) * | 2006-07-19 | 2007-11-30 | 삼성전자주식회사 | 상변화막을 포함하는 반도체 소자의 형성 방법 |
| JP2010506408A (ja) * | 2006-10-05 | 2010-02-25 | エーエスエム アメリカ インコーポレイテッド | 金属シリケート膜のａｌｄ |
| CN102352488B (zh) * | 2006-11-02 | 2016-04-06 | 诚实公司 | 对于金属薄膜的cvd/ald有用的锑及锗复合物 |
| US8454928B2 (en) * | 2007-09-17 | 2013-06-04 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Tellurium precursors for GST deposition |
| SG178736A1 (en) * | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US7960205B2 (en) * | 2007-11-27 | 2011-06-14 | Air Products And Chemicals, Inc. | Tellurium precursors for GST films in an ALD or CVD process |
| JP5718808B2 (ja) * | 2008-04-25 | 2015-05-13 | エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． | テルルおよびセレン薄膜のａｌｄのための前駆体の合成および使用 |
-
2009
- 2009-01-16 US US12/355,325 patent/US8318252B2/en not_active Expired - Fee Related
- 2009-01-23 TW TW098103029A patent/TWI382104B/zh not_active IP Right Cessation
- 2009-01-27 EP EP09151404A patent/EP2083096B1/en not_active Not-in-force
- 2009-01-28 KR KR1020090006706A patent/KR101068013B1/ko not_active Expired - Fee Related
- 2009-01-28 JP JP2009016913A patent/JP5350819B2/ja not_active Expired - Fee Related
- 2009-02-01 CN CN2009101267678A patent/CN101497999B/zh not_active Expired - Fee Related
-
2012
- 2012-10-02 JP JP2012220284A patent/JP5778648B2/ja not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006182781A (ja) * | 2004-12-27 | 2006-07-13 | Samsung Electronics Co Ltd | ゲルマニウム前駆体、これを利用して形成されたｇｓｔ薄膜、前記薄膜の製造方法及び相変化メモリ素子 |
| WO2007133837A2 (en) * | 2006-05-12 | 2007-11-22 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5778648B2 (ja) | 2015-09-16 |
| KR101068013B1 (ko) | 2011-09-26 |
| EP2083096A1 (en) | 2009-07-29 |
| US20090191330A1 (en) | 2009-07-30 |
| EP2083096B1 (en) | 2013-01-02 |
| JP2009215645A (ja) | 2009-09-24 |
| JP2013060663A (ja) | 2013-04-04 |
| JP5350819B2 (ja) | 2013-11-27 |
| US8318252B2 (en) | 2012-11-27 |
| CN101497999A (zh) | 2009-08-05 |
| TW200934885A (en) | 2009-08-16 |
| KR20090082873A (ko) | 2009-07-31 |
| CN101497999B (zh) | 2012-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI382104B (zh) | 於ａｌｄ／ｃｖｄ製程中作為ｇｓｔ膜的銻前驅物 | |
| TWI734896B (zh) | 用於沉積作為鐵電材料的矽摻雜氧化鉿的新配方、使用其的沉積方法、系統及包含其的容器 | |
| CN101476112B (zh) | 在ald或cvd工艺中用于gst薄膜的碲前体 | |
| TWI675932B (zh) | 用於沉積作為鐵電材料的矽摻雜氧化鉿的新配方、使用其的沉積方法、系統及包含其的容器 | |
| JP5957017B2 (ja) | 新規な４ｂ族有機金属化合物及びその製造方法 | |
| EP1995236B1 (en) | Tellurium (Te) precursors for making phase change memory materials | |
| TW201016877A (en) | Tellurium precursors for film deposition | |
| TW201012961A (en) | Binary and ternary metal chalcogenide materials and method of making and using same | |
| TW201005117A (en) | Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films | |
| TW200925315A (en) | Tellurium precursors for GST film deposition | |
| TW200844252A (en) | Method for the deposition of a ruthenium containing film | |
| US20170117142A1 (en) | Organic Germanium Amine Compound and Method for Depositing Thin Film Using the Same | |
| KR101838617B1 (ko) | 금속 산화물 박막, 금속-규소 산화물 박막, 또는 금속-게르마늄 산화물 박막 및 이의 제조 방법 | |
| JP2023001023A (ja) | 薄膜蒸着のための有機スズ化合物及びそれを用いたスズ含有薄膜の形成方法 | |
| TWI529258B (zh) | 用於ａｌｄ／ｃｖｄ方法的ｇｓｔ膜前驅物 | |
| KR20150097429A (ko) | 게르마늄 안티몬 텔루륨 합금 형성용 전구체 조성물 및 이를 이용한 게르마늄 안티몬 텔루륨 합금막 형성 방법 | |
| KR102731420B1 (ko) | 몰리브데넘 화합물, 이의 제조방법 및 이를 포함하는 박막 증착용 조성물 | |
| TW201920225A (zh) | 含Ge之Co膜形成材料、含Ge之Co膜及其成膜方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |