JP2013033812A - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP2013033812A
JP2013033812A JP2011168469A JP2011168469A JP2013033812A JP 2013033812 A JP2013033812 A JP 2013033812A JP 2011168469 A JP2011168469 A JP 2011168469A JP 2011168469 A JP2011168469 A JP 2011168469A JP 2013033812 A JP2013033812 A JP 2013033812A
Authority
JP
Japan
Prior art keywords
conductive layer
transistor
semiconductor module
power semiconductor
ceramic substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011168469A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013033812A5 (https=
Inventor
Kohei Matsui
康平 松井
Satoshi Tanimoto
谷本　　智
Yoshinori Murakami
善則 村上
Yusuke Zushi
祐輔 図子
Shinji Sato
伸二 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Nissan Motor Co Ltd
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Nissan Motor Co Ltd, Sanken Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2011168469A priority Critical patent/JP2013033812A/ja
Priority to PCT/JP2012/069512 priority patent/WO2013018811A1/ja
Publication of JP2013033812A publication Critical patent/JP2013033812A/ja
Publication of JP2013033812A5 publication Critical patent/JP2013033812A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)
JP2011168469A 2011-08-01 2011-08-01 パワー半導体モジュール Withdrawn JP2013033812A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011168469A JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール
PCT/JP2012/069512 WO2013018811A1 (ja) 2011-08-01 2012-07-31 パワー半導体モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011168469A JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール

Publications (2)

Publication Number Publication Date
JP2013033812A true JP2013033812A (ja) 2013-02-14
JP2013033812A5 JP2013033812A5 (https=) 2013-03-28

Family

ID=47629332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011168469A Withdrawn JP2013033812A (ja) 2011-08-01 2011-08-01 パワー半導体モジュール

Country Status (2)

Country Link
JP (1) JP2013033812A (https=)
WO (1) WO2013018811A1 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055278A (ja) * 2011-09-06 2013-03-21 Mitsubishi Electric Corp 電力用半導体スイッチおよび電力変換装置
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2016002385A1 (ja) * 2014-07-03 2016-01-07 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
WO2017090281A1 (ja) * 2015-11-25 2017-06-01 シャープ株式会社 モジュール基板
WO2017163612A1 (ja) * 2016-03-24 2017-09-28 株式会社日立製作所 パワー半導体モジュール
US10600765B2 (en) 2015-10-22 2020-03-24 Mitsubishi Electric Corporation Semiconductor device and method for producing the same
US10756057B2 (en) 2014-11-28 2020-08-25 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and method of manufacturing same
CN113179038A (zh) * 2020-01-09 2021-07-27 三菱电机株式会社 半导体装置
WO2025057452A1 (ja) * 2023-09-14 2025-03-20 株式会社 東芝 半導体装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6155282B2 (ja) * 2012-12-13 2017-06-28 株式会社日立製作所 パワー半導体モジュール及びこれを用いた電力変換装置
DE102013008193A1 (de) * 2013-05-14 2014-11-20 Audi Ag Vorrichtung und elektrische Baugruppe zum Wandeln einer Gleichspannung in eine Wechselspannung
CN107580727B (zh) 2015-02-17 2020-12-22 皇家飞利浦有限公司 陶瓷基底以及用于生产陶瓷基底的方法
CN110783323B (zh) * 2019-09-10 2024-08-02 杭州泰昕微电子有限公司 一种应用于逆变焊机的大功率集成器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3723869B2 (ja) * 2001-03-30 2005-12-07 株式会社日立製作所 半導体装置
JP3825309B2 (ja) * 2001-11-30 2006-09-27 京セラ株式会社 インバータ制御モジュール
JP2009182261A (ja) * 2008-01-31 2009-08-13 Rohm Co Ltd 半導体装置
JP5185956B2 (ja) * 2010-01-06 2013-04-17 三菱電機株式会社 電力用半導体装置

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013055278A (ja) * 2011-09-06 2013-03-21 Mitsubishi Electric Corp 電力用半導体スイッチおよび電力変換装置
JP2015185630A (ja) * 2014-03-24 2015-10-22 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
WO2016002385A1 (ja) * 2014-07-03 2016-01-07 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US20170154877A1 (en) * 2014-07-03 2017-06-01 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
JPWO2016002385A1 (ja) * 2014-07-03 2017-06-08 日産自動車株式会社 ハーフブリッジパワー半導体モジュール及びその製造方法
US10522517B2 (en) 2014-07-03 2019-12-31 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and manufacturing method therefor
US10756057B2 (en) 2014-11-28 2020-08-25 Nissan Motor Co., Ltd. Half-bridge power semiconductor module and method of manufacturing same
WO2017002390A1 (ja) * 2015-06-30 2017-01-05 シャープ株式会社 回路モジュール
US10600765B2 (en) 2015-10-22 2020-03-24 Mitsubishi Electric Corporation Semiconductor device and method for producing the same
WO2017090281A1 (ja) * 2015-11-25 2017-06-01 シャープ株式会社 モジュール基板
JPWO2017163612A1 (ja) * 2016-03-24 2018-09-27 株式会社日立製作所 パワー半導体モジュール
WO2017163612A1 (ja) * 2016-03-24 2017-09-28 株式会社日立製作所 パワー半導体モジュール
CN113179038A (zh) * 2020-01-09 2021-07-27 三菱电机株式会社 半导体装置
JP2021112025A (ja) * 2020-01-09 2021-08-02 三菱電機株式会社 半導体装置
CN113179038B (zh) * 2020-01-09 2024-09-17 三菱电机株式会社 半导体装置
WO2025057452A1 (ja) * 2023-09-14 2025-03-20 株式会社 東芝 半導体装置

Also Published As

Publication number Publication date
WO2013018811A1 (ja) 2013-02-07

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