JP2013026327A5 - - Google Patents

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Publication number
JP2013026327A5
JP2013026327A5 JP2011157955A JP2011157955A JP2013026327A5 JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5 JP 2011157955 A JP2011157955 A JP 2011157955A JP 2011157955 A JP2011157955 A JP 2011157955A JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5
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JP
Japan
Prior art keywords
cleaning
chamber
irradiating
gas cluster
processed
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JP2011157955A
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English (en)
Japanese (ja)
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JP2013026327A (ja
JP5776397B2 (ja
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Priority claimed from JP2011157955A external-priority patent/JP5776397B2/ja
Priority to JP2011157955A priority Critical patent/JP5776397B2/ja
Priority to PCT/JP2012/004521 priority patent/WO2013011673A1/ja
Priority to KR1020147004113A priority patent/KR101672833B1/ko
Priority to US14/232,989 priority patent/US9837260B2/en
Priority to CN201280033416.2A priority patent/CN103650117B/zh
Priority to TW101125649A priority patent/TWI540658B/zh
Publication of JP2013026327A publication Critical patent/JP2013026327A/ja
Publication of JP2013026327A5 publication Critical patent/JP2013026327A5/ja
Publication of JP5776397B2 publication Critical patent/JP5776397B2/ja
Application granted granted Critical
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JP2011157955A 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体 Active JP5776397B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体
CN201280033416.2A CN103650117B (zh) 2011-07-19 2012-07-12 清洗方法和处理装置
KR1020147004113A KR101672833B1 (ko) 2011-07-19 2012-07-12 세정 방법, 처리 장치 및 기억 매체
US14/232,989 US9837260B2 (en) 2011-07-19 2012-07-12 Cleaning method, processing apparatus, and storage medium
PCT/JP2012/004521 WO2013011673A1 (ja) 2011-07-19 2012-07-12 洗浄方法、処理装置及び記憶媒体
TW101125649A TWI540658B (zh) 2011-07-19 2012-07-17 Cleaning methods, handling devices and memory media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011157955A JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013026327A JP2013026327A (ja) 2013-02-04
JP2013026327A5 true JP2013026327A5 (enExample) 2014-04-17
JP5776397B2 JP5776397B2 (ja) 2015-09-09

Family

ID=47557874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011157955A Active JP5776397B2 (ja) 2011-07-19 2011-07-19 洗浄方法、処理装置及び記憶媒体

Country Status (6)

Country Link
US (1) US9837260B2 (enExample)
JP (1) JP5776397B2 (enExample)
KR (1) KR101672833B1 (enExample)
CN (1) CN103650117B (enExample)
TW (1) TWI540658B (enExample)
WO (1) WO2013011673A1 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014130979A1 (en) * 2013-02-25 2014-08-28 Exogenesis Corporation Defect reduction in a substrate treatment method
JP2015026745A (ja) * 2013-07-26 2015-02-05 東京エレクトロン株式会社 基板洗浄方法及び基板洗浄装置
JP6311236B2 (ja) * 2013-08-20 2018-04-18 東京エレクトロン株式会社 基板洗浄装置
KR101429732B1 (ko) * 2013-12-18 2014-08-12 주식회사 엔픽스 건식 박리 장치, 건식 박리를 위한 고속 입자 빔을 생성하는 노즐 및 고속 입자 빔을 이용한 건식 박리 방법.
JP6566683B2 (ja) * 2014-07-02 2019-08-28 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
EP3189540A4 (en) * 2014-09-05 2018-08-08 Tel Epion Inc. Process gas enhancement for beam treatment of a substrate
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
KR102476040B1 (ko) * 2014-10-06 2022-12-08 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. 극저온 유체 혼합물로 기판을 처리하는 시스템 및 방법
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
WO2017094388A1 (ja) 2015-11-30 2017-06-08 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
US11761075B2 (en) 2015-12-07 2023-09-19 Tokyo Electron Limited Substrate cleaning apparatus
JP6881922B2 (ja) * 2016-09-12 2021-06-02 株式会社Screenホールディングス 基板処理方法および基板処理装置
CN109923659B (zh) 2016-11-09 2024-03-12 东京毅力科创Fsi公司 用于在处理室中处理微电子衬底的磁悬浮且旋转的卡盘
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Fsi股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
WO2018140789A1 (en) 2017-01-27 2018-08-02 Tel Fsi, Inc. Systems and methods for rotating and translating a substrate in a process chamber
US10890843B2 (en) * 2017-07-28 2021-01-12 Tokyo Electron Limited Fast imprint lithography
CN111937128A (zh) 2018-02-19 2020-11-13 东京毅力科创美国制造与工程公司 具有可控射束大小的处理喷雾的微电子处理系统
CN110189994A (zh) * 2018-02-23 2019-08-30 东莞新科技术研究开发有限公司 半导体表面微颗粒的处理方法
TWI776026B (zh) * 2018-06-04 2022-09-01 美商帕斯馬舍門有限責任公司 切割晶粒附接膜的方法
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
CN109545710A (zh) * 2018-09-29 2019-03-29 东方日升新能源股份有限公司 一种降低折射率的镀膜方法
US11177150B2 (en) * 2019-03-14 2021-11-16 Taiwan Semiconductor Manufacturing Co., Ltd. Cluster tool and method using the same
CN112447496B (zh) * 2019-08-28 2024-10-18 东莞新科技术研究开发有限公司 半导体离子刻蚀清洗方法
WO2021085213A1 (ja) * 2019-11-01 2021-05-06 東京エレクトロン株式会社 基板洗浄装置および基板洗浄方法
US11551942B2 (en) * 2020-09-15 2023-01-10 Applied Materials, Inc. Methods and apparatus for cleaning a substrate after processing
JP7712132B2 (ja) * 2021-07-29 2025-07-23 株式会社ディスコ 加工装置
CN116013804B (zh) * 2021-10-22 2025-08-29 长鑫存储技术有限公司 清洗装置及其清洗方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512106A (en) * 1993-01-27 1996-04-30 Sumitomo Heavy Industries, Ltd. Surface cleaning with argon
JPH11330033A (ja) * 1998-05-12 1999-11-30 Fraser Scient Inc エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置
US6689284B1 (en) * 1999-09-29 2004-02-10 Kabushiki Kaisha Toshiba Surface treating method
JP3817417B2 (ja) * 1999-09-29 2006-09-06 株式会社東芝 表面処理方法
KR100349948B1 (ko) 1999-11-17 2002-08-22 주식회사 다산 씨.앤드.아이 클러스터를 이용한 건식 세정 장치 및 방법
US20040157456A1 (en) * 2003-02-10 2004-08-12 Hall Lindsey H. Surface defect elimination using directed beam method
JP3816484B2 (ja) * 2003-12-15 2006-08-30 日本航空電子工業株式会社 ドライエッチング方法
JP2006278387A (ja) 2005-03-28 2006-10-12 Dainippon Screen Mfg Co Ltd 基板洗浄装置および基板洗浄方法
JP2007242869A (ja) 2006-03-08 2007-09-20 Tokyo Electron Ltd 基板処理システム
JP2008124356A (ja) * 2006-11-15 2008-05-29 Sekisui Chem Co Ltd 表面処理方法及び装置
JP2008227283A (ja) * 2007-03-14 2008-09-25 Mitsui Eng & Shipbuild Co Ltd SiCパーティクルモニタウエハの製造方法
JP5016351B2 (ja) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 基板処理システム及び基板洗浄装置
JP2008304737A (ja) 2007-06-08 2008-12-18 Sii Nanotechnology Inc フォトマスクの欠陥修正方法及び異物除去方法
EP2170778A1 (en) * 2007-06-29 2010-04-07 Asahi Glass Company, Limited Method for removing foreign matter from glass substrate surface and method for processing glass substrate surface
JP5006134B2 (ja) 2007-08-09 2012-08-22 東京エレクトロン株式会社 ドライクリーニング方法
JP5411438B2 (ja) 2008-03-18 2014-02-12 信越化学工業株式会社 Soi基板の製造方法
US7776743B2 (en) * 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
CN102124544B (zh) * 2008-08-18 2013-11-13 岩谷产业株式会社 团簇喷射式加工方法、半导体元件、微机电元件及光学零件
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
JP5623104B2 (ja) 2010-03-18 2014-11-12 東京エレクトロン株式会社 基板洗浄装置及び基板洗浄方法
US8440578B2 (en) * 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US8513138B2 (en) * 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for Si-containing and Ge-containing materials

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