JP2013026327A5 - - Google Patents
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- Publication number
- JP2013026327A5 JP2013026327A5 JP2011157955A JP2011157955A JP2013026327A5 JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5 JP 2011157955 A JP2011157955 A JP 2011157955A JP 2011157955 A JP2011157955 A JP 2011157955A JP 2013026327 A5 JP2013026327 A5 JP 2013026327A5
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- chamber
- irradiating
- gas cluster
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 claims 31
- 238000000034 method Methods 0.000 claims 25
- 230000001678 irradiating effect Effects 0.000 claims 16
- 230000007246 mechanism Effects 0.000 claims 15
- 238000005530 etching Methods 0.000 claims 8
- 238000007781 pre-processing Methods 0.000 claims 6
- 238000004590 computer program Methods 0.000 claims 2
- 230000004048 modification Effects 0.000 claims 2
- 238000012986 modification Methods 0.000 claims 2
- 230000009257 reactivity Effects 0.000 claims 2
- 238000002203 pretreatment Methods 0.000 claims 1
- 230000007723 transport mechanism Effects 0.000 claims 1
- 238000009489 vacuum treatment Methods 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011157955A JP5776397B2 (ja) | 2011-07-19 | 2011-07-19 | 洗浄方法、処理装置及び記憶媒体 |
| CN201280033416.2A CN103650117B (zh) | 2011-07-19 | 2012-07-12 | 清洗方法和处理装置 |
| KR1020147004113A KR101672833B1 (ko) | 2011-07-19 | 2012-07-12 | 세정 방법, 처리 장치 및 기억 매체 |
| US14/232,989 US9837260B2 (en) | 2011-07-19 | 2012-07-12 | Cleaning method, processing apparatus, and storage medium |
| PCT/JP2012/004521 WO2013011673A1 (ja) | 2011-07-19 | 2012-07-12 | 洗浄方法、処理装置及び記憶媒体 |
| TW101125649A TWI540658B (zh) | 2011-07-19 | 2012-07-17 | Cleaning methods, handling devices and memory media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011157955A JP5776397B2 (ja) | 2011-07-19 | 2011-07-19 | 洗浄方法、処理装置及び記憶媒体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013026327A JP2013026327A (ja) | 2013-02-04 |
| JP2013026327A5 true JP2013026327A5 (enExample) | 2014-04-17 |
| JP5776397B2 JP5776397B2 (ja) | 2015-09-09 |
Family
ID=47557874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011157955A Active JP5776397B2 (ja) | 2011-07-19 | 2011-07-19 | 洗浄方法、処理装置及び記憶媒体 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9837260B2 (enExample) |
| JP (1) | JP5776397B2 (enExample) |
| KR (1) | KR101672833B1 (enExample) |
| CN (1) | CN103650117B (enExample) |
| TW (1) | TWI540658B (enExample) |
| WO (1) | WO2013011673A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014130979A1 (en) * | 2013-02-25 | 2014-08-28 | Exogenesis Corporation | Defect reduction in a substrate treatment method |
| JP2015026745A (ja) * | 2013-07-26 | 2015-02-05 | 東京エレクトロン株式会社 | 基板洗浄方法及び基板洗浄装置 |
| JP6311236B2 (ja) * | 2013-08-20 | 2018-04-18 | 東京エレクトロン株式会社 | 基板洗浄装置 |
| KR101429732B1 (ko) * | 2013-12-18 | 2014-08-12 | 주식회사 엔픽스 | 건식 박리 장치, 건식 박리를 위한 고속 입자 빔을 생성하는 노즐 및 고속 입자 빔을 이용한 건식 박리 방법. |
| JP6566683B2 (ja) * | 2014-07-02 | 2019-08-28 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄装置 |
| EP3189540A4 (en) * | 2014-09-05 | 2018-08-08 | Tel Epion Inc. | Process gas enhancement for beam treatment of a substrate |
| US10014191B2 (en) | 2014-10-06 | 2018-07-03 | Tel Fsi, Inc. | Systems and methods for treating substrates with cryogenic fluid mixtures |
| KR102476040B1 (ko) * | 2014-10-06 | 2022-12-08 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 극저온 유체 혼합물로 기판을 처리하는 시스템 및 방법 |
| US10625280B2 (en) | 2014-10-06 | 2020-04-21 | Tel Fsi, Inc. | Apparatus for spraying cryogenic fluids |
| JP6545053B2 (ja) * | 2015-03-30 | 2019-07-17 | 東京エレクトロン株式会社 | 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法 |
| WO2017094388A1 (ja) | 2015-11-30 | 2017-06-08 | 東京エレクトロン株式会社 | 基板処理装置のチャンバークリーニング方法 |
| US11761075B2 (en) | 2015-12-07 | 2023-09-19 | Tokyo Electron Limited | Substrate cleaning apparatus |
| JP6881922B2 (ja) * | 2016-09-12 | 2021-06-02 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| CN109923659B (zh) | 2016-11-09 | 2024-03-12 | 东京毅力科创Fsi公司 | 用于在处理室中处理微电子衬底的磁悬浮且旋转的卡盘 |
| TWI765936B (zh) | 2016-11-29 | 2022-06-01 | 美商東京威力科創Fsi股份有限公司 | 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭 |
| WO2018140789A1 (en) | 2017-01-27 | 2018-08-02 | Tel Fsi, Inc. | Systems and methods for rotating and translating a substrate in a process chamber |
| US10890843B2 (en) * | 2017-07-28 | 2021-01-12 | Tokyo Electron Limited | Fast imprint lithography |
| CN111937128A (zh) | 2018-02-19 | 2020-11-13 | 东京毅力科创美国制造与工程公司 | 具有可控射束大小的处理喷雾的微电子处理系统 |
| CN110189994A (zh) * | 2018-02-23 | 2019-08-30 | 东莞新科技术研究开发有限公司 | 半导体表面微颗粒的处理方法 |
| TWI776026B (zh) * | 2018-06-04 | 2022-09-01 | 美商帕斯馬舍門有限責任公司 | 切割晶粒附接膜的方法 |
| US11545387B2 (en) | 2018-07-13 | 2023-01-03 | Tel Manufacturing And Engineering Of America, Inc. | Magnetic integrated lift pin system for a chemical processing chamber |
| CN109545710A (zh) * | 2018-09-29 | 2019-03-29 | 东方日升新能源股份有限公司 | 一种降低折射率的镀膜方法 |
| US11177150B2 (en) * | 2019-03-14 | 2021-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cluster tool and method using the same |
| CN112447496B (zh) * | 2019-08-28 | 2024-10-18 | 东莞新科技术研究开发有限公司 | 半导体离子刻蚀清洗方法 |
| WO2021085213A1 (ja) * | 2019-11-01 | 2021-05-06 | 東京エレクトロン株式会社 | 基板洗浄装置および基板洗浄方法 |
| US11551942B2 (en) * | 2020-09-15 | 2023-01-10 | Applied Materials, Inc. | Methods and apparatus for cleaning a substrate after processing |
| JP7712132B2 (ja) * | 2021-07-29 | 2025-07-23 | 株式会社ディスコ | 加工装置 |
| CN116013804B (zh) * | 2021-10-22 | 2025-08-29 | 长鑫存储技术有限公司 | 清洗装置及其清洗方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5512106A (en) * | 1993-01-27 | 1996-04-30 | Sumitomo Heavy Industries, Ltd. | Surface cleaning with argon |
| JPH11330033A (ja) * | 1998-05-12 | 1999-11-30 | Fraser Scient Inc | エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置 |
| US6689284B1 (en) * | 1999-09-29 | 2004-02-10 | Kabushiki Kaisha Toshiba | Surface treating method |
| JP3817417B2 (ja) * | 1999-09-29 | 2006-09-06 | 株式会社東芝 | 表面処理方法 |
| KR100349948B1 (ko) | 1999-11-17 | 2002-08-22 | 주식회사 다산 씨.앤드.아이 | 클러스터를 이용한 건식 세정 장치 및 방법 |
| US20040157456A1 (en) * | 2003-02-10 | 2004-08-12 | Hall Lindsey H. | Surface defect elimination using directed beam method |
| JP3816484B2 (ja) * | 2003-12-15 | 2006-08-30 | 日本航空電子工業株式会社 | ドライエッチング方法 |
| JP2006278387A (ja) | 2005-03-28 | 2006-10-12 | Dainippon Screen Mfg Co Ltd | 基板洗浄装置および基板洗浄方法 |
| JP2007242869A (ja) | 2006-03-08 | 2007-09-20 | Tokyo Electron Ltd | 基板処理システム |
| JP2008124356A (ja) * | 2006-11-15 | 2008-05-29 | Sekisui Chem Co Ltd | 表面処理方法及び装置 |
| JP2008227283A (ja) * | 2007-03-14 | 2008-09-25 | Mitsui Eng & Shipbuild Co Ltd | SiCパーティクルモニタウエハの製造方法 |
| JP5016351B2 (ja) * | 2007-03-29 | 2012-09-05 | 東京エレクトロン株式会社 | 基板処理システム及び基板洗浄装置 |
| JP2008304737A (ja) | 2007-06-08 | 2008-12-18 | Sii Nanotechnology Inc | フォトマスクの欠陥修正方法及び異物除去方法 |
| EP2170778A1 (en) * | 2007-06-29 | 2010-04-07 | Asahi Glass Company, Limited | Method for removing foreign matter from glass substrate surface and method for processing glass substrate surface |
| JP5006134B2 (ja) | 2007-08-09 | 2012-08-22 | 東京エレクトロン株式会社 | ドライクリーニング方法 |
| JP5411438B2 (ja) | 2008-03-18 | 2014-02-12 | 信越化学工業株式会社 | Soi基板の製造方法 |
| US7776743B2 (en) * | 2008-07-30 | 2010-08-17 | Tel Epion Inc. | Method of forming semiconductor devices containing metal cap layers |
| CN102124544B (zh) * | 2008-08-18 | 2013-11-13 | 岩谷产业株式会社 | 团簇喷射式加工方法、半导体元件、微机电元件及光学零件 |
| US8097860B2 (en) * | 2009-02-04 | 2012-01-17 | Tel Epion Inc. | Multiple nozzle gas cluster ion beam processing system and method of operating |
| JP5623104B2 (ja) | 2010-03-18 | 2014-11-12 | 東京エレクトロン株式会社 | 基板洗浄装置及び基板洗浄方法 |
| US8440578B2 (en) * | 2011-03-28 | 2013-05-14 | Tel Epion Inc. | GCIB process for reducing interfacial roughness following pre-amorphization |
| US8513138B2 (en) * | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for Si-containing and Ge-containing materials |
-
2011
- 2011-07-19 JP JP2011157955A patent/JP5776397B2/ja active Active
-
2012
- 2012-07-12 KR KR1020147004113A patent/KR101672833B1/ko active Active
- 2012-07-12 CN CN201280033416.2A patent/CN103650117B/zh active Active
- 2012-07-12 WO PCT/JP2012/004521 patent/WO2013011673A1/ja not_active Ceased
- 2012-07-12 US US14/232,989 patent/US9837260B2/en active Active
- 2012-07-17 TW TW101125649A patent/TWI540658B/zh active
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