JP2013004572A5 - - Google Patents

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Publication number
JP2013004572A5
JP2013004572A5 JP2011131206A JP2011131206A JP2013004572A5 JP 2013004572 A5 JP2013004572 A5 JP 2013004572A5 JP 2011131206 A JP2011131206 A JP 2011131206A JP 2011131206 A JP2011131206 A JP 2011131206A JP 2013004572 A5 JP2013004572 A5 JP 2013004572A5
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JP
Japan
Prior art keywords
semiconductor substrate
electrode
forming
gate electrode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011131206A
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English (en)
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JP2013004572A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2011131206A priority Critical patent/JP2013004572A/ja
Priority claimed from JP2011131206A external-priority patent/JP2013004572A/ja
Priority to US13/355,991 priority patent/US8778748B2/en
Priority to DE102012203844.2A priority patent/DE102012203844B4/de
Priority to CN201210191772.9A priority patent/CN102832132B/zh
Publication of JP2013004572A publication Critical patent/JP2013004572A/ja
Publication of JP2013004572A5 publication Critical patent/JP2013004572A5/ja
Pending legal-status Critical Current

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Claims (5)

  1. 可視光に対して透明な半導体基板の表面にソース電極及びドレイン電極を形成する工程と、
    前記半導体基板の表面において前記ソース電極と前記ドレイン電極との間に表側ゲート電極を形成する工程と、
    前記半導体基板の表面において前記ソース電極と前記ドレイン電極との間以外の領域に合わせマークを形成する工程と、
    前記半導体基板を透過して見える前記合わせマークに基づいて前記半導体基板を位置合わせして、前記半導体基板の裏面において前記表側ゲート電極と対向する位置に裏側ゲート電極を形成する工程とを備えることを特徴とする半導体装置の製造方法。
  2. 前記表側ゲート電極と前記合わせマークを同時に形成することを特徴とする請求項１に記載の半導体装置の製造方法。
  3. 前記表側ゲート電極はＴ字型であり、
    前記表側ゲート電極のゲート長は、前記裏側ゲート電極のゲート長と同じであることを特徴とする請求項１又は２に記載の半導体装置の製造方法。
  4. 前記半導体基板の裏面に凹部を形成する工程と、
    前記凹部内に前記裏側ゲート電極を形成する工程と、
    前記凹部内に絶縁体を充填して前記裏側ゲート電極を前記絶縁体で覆う工程と、
    前記絶縁体を充填した後に、前記半導体基板の裏面に、前記ソース電極と電気的に接続されたダイボンド用のメタルを形成する工程とを更に備えることを特徴とする請求項１〜３の何れか１項に記載の半導体装置の製造方法。
  5. 前記ソース電極及び前記ドレイン電極上に半田バンプを形成する工程と、
    前記半導体基板の表面を回路基板側に向けて、前記半田バンプを介して前記ソース電極及び前記ドレイン電極を前記回路基板の電極に接合する工程とを更に備えることを特徴とする請求項１〜４の何れか１項に記載の半導体装置の製造方法。
JP2011131206A 2011-06-13 2011-06-13 半導体装置の製造方法 Pending JP2013004572A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011131206A JP2013004572A (ja) 2011-06-13 2011-06-13 半導体装置の製造方法
US13/355,991 US8778748B2 (en) 2011-06-13 2012-01-23 Method for manufacturing semiconductor device
DE102012203844.2A DE102012203844B4 (de) 2011-06-13 2012-03-12 Verfahren zum Herstellen einer Halbleitervorrichtung
CN201210191772.9A CN102832132B (zh) 2011-06-13 2012-06-12 半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011131206A JP2013004572A (ja) 2011-06-13 2011-06-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2013004572A JP2013004572A (ja) 2013-01-07
JP2013004572A5 true JP2013004572A5 (ja) 2014-09-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011131206A Pending JP2013004572A (ja) 2011-06-13 2011-06-13 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US8778748B2 (ja)
JP (1) JP2013004572A (ja)
CN (1) CN102832132B (ja)
DE (1) DE102012203844B4 (ja)

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