JP2012532953A - 半導体ナノ結晶及びその調製方法 - Google Patents
半導体ナノ結晶及びその調製方法 Download PDFInfo
- Publication number
- JP2012532953A JP2012532953A JP2012519473A JP2012519473A JP2012532953A JP 2012532953 A JP2012532953 A JP 2012532953A JP 2012519473 A JP2012519473 A JP 2012519473A JP 2012519473 A JP2012519473 A JP 2012519473A JP 2012532953 A JP2012532953 A JP 2012532953A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor nanocrystal
- semiconductor
- poly
- nanocrystal
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004054 semiconductor nanocrystal Substances 0.000 title claims abstract description 217
- 238000002360 preparation method Methods 0.000 title description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 28
- 239000011159 matrix material Substances 0.000 claims description 19
- 238000002156 mixing Methods 0.000 claims description 18
- 239000013110 organic ligand Substances 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 239000011258 core-shell material Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 125000000524 functional group Chemical group 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- 238000005411 Van der Waals force Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920001603 poly (alkyl acrylates) Polymers 0.000 claims description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 3
- 229920000548 poly(silane) polymer Polymers 0.000 claims description 3
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 53
- 239000002159 nanocrystal Substances 0.000 description 48
- -1 COO Chemical group 0.000 description 38
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 28
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 21
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 12
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 12
- 239000012299 nitrogen atmosphere Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 10
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 8
- 229910052717 sulfur Inorganic materials 0.000 description 8
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 7
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 7
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 7
- 239000005642 Oleic acid Substances 0.000 description 7
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 7
- 238000002835 absorbance Methods 0.000 description 7
- 238000000295 emission spectrum Methods 0.000 description 7
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 7
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 7
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 7
- 239000002244 precipitate Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- WWZKQHOCKIZLMA-UHFFFAOYSA-N Caprylic acid Natural products CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 6
- 235000021314 Palmitic acid Nutrition 0.000 description 6
- 125000002947 alkylene group Chemical group 0.000 description 6
- 125000003118 aryl group Chemical group 0.000 description 6
- 235000010233 benzoic acid Nutrition 0.000 description 6
- 229960004365 benzoic acid Drugs 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 125000005842 heteroatom Chemical group 0.000 description 6
- 125000006588 heterocycloalkylene group Chemical group 0.000 description 6
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 5
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 125000000304 alkynyl group Chemical group 0.000 description 5
- 125000002993 cycloalkylene group Chemical group 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N phosphine group Chemical group P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 239000002798 polar solvent Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000011593 sulfur Substances 0.000 description 5
- 239000004246 zinc acetate Substances 0.000 description 5
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 4
- ALRHLSYJTWAHJZ-UHFFFAOYSA-N 3-hydroxypropionic acid Chemical compound OCCC(O)=O ALRHLSYJTWAHJZ-UHFFFAOYSA-N 0.000 description 4
- 125000000739 C2-C30 alkenyl group Chemical group 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 4
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- 125000005549 heteroarylene group Chemical group 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 4
- 235000019260 propionic acid Nutrition 0.000 description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 4
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 125000004450 alkenylene group Chemical group 0.000 description 3
- 125000004419 alkynylene group Chemical group 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 125000000732 arylene group Chemical group 0.000 description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- ZRKMQKLGEQPLNS-UHFFFAOYSA-N 1-Pentanethiol Chemical compound CCCCCS ZRKMQKLGEQPLNS-UHFFFAOYSA-N 0.000 description 2
- UODGHRYECKYJEB-UHFFFAOYSA-N 1-aminobutane-1-thiol Chemical compound CCCC(N)S UODGHRYECKYJEB-UHFFFAOYSA-N 0.000 description 2
- ZQXIMYREBUZLPM-UHFFFAOYSA-N 1-aminoethanethiol Chemical compound CC(N)S ZQXIMYREBUZLPM-UHFFFAOYSA-N 0.000 description 2
- NPEIGRBGMUJNFE-UHFFFAOYSA-N 1-aminohexan-1-ol Chemical compound CCCCCC(N)O NPEIGRBGMUJNFE-UHFFFAOYSA-N 0.000 description 2
- JHGWWHOLBSCWNL-UHFFFAOYSA-N 1-aminohexane-1-thiol Chemical compound CCCCCC(N)S JHGWWHOLBSCWNL-UHFFFAOYSA-N 0.000 description 2
- WGAOZGUUHIBABN-UHFFFAOYSA-N 1-aminopentan-1-ol Chemical compound CCCCC(N)O WGAOZGUUHIBABN-UHFFFAOYSA-N 0.000 description 2
- DJZAFAJXGDOEMY-UHFFFAOYSA-N 1-aminopentane-1-thiol Chemical compound CCCCC(N)S DJZAFAJXGDOEMY-UHFFFAOYSA-N 0.000 description 2
- ZIRURAJAJIQZFG-UHFFFAOYSA-N 1-aminopropane-1-sulfonic acid Chemical compound CCC(N)S(O)(=O)=O ZIRURAJAJIQZFG-UHFFFAOYSA-N 0.000 description 2
- IXRAZHMEXBNECJ-UHFFFAOYSA-N 1-aminopropane-1-thiol Chemical compound CCC(N)S IXRAZHMEXBNECJ-UHFFFAOYSA-N 0.000 description 2
- NDDIKKNFARRUNI-UHFFFAOYSA-N 1-phosphorosopropane Chemical compound CCCP=O NDDIKKNFARRUNI-UHFFFAOYSA-N 0.000 description 2
- HKNNAYPWWDWHFR-UHFFFAOYSA-N 1-sulfanylbutan-1-ol Chemical compound CCCC(O)S HKNNAYPWWDWHFR-UHFFFAOYSA-N 0.000 description 2
- AKIZPWSPNKVOMT-UHFFFAOYSA-N 1-sulfanylhexan-1-ol Chemical compound CCCCCC(O)S AKIZPWSPNKVOMT-UHFFFAOYSA-N 0.000 description 2
- PDXOPTFTOFXXSU-UHFFFAOYSA-N 1-sulfanylpentan-1-ol Chemical compound CCCCC(O)S PDXOPTFTOFXXSU-UHFFFAOYSA-N 0.000 description 2
- AEUVIXACNOXTBX-UHFFFAOYSA-N 1-sulfanylpropan-1-ol Chemical compound CCC(O)S AEUVIXACNOXTBX-UHFFFAOYSA-N 0.000 description 2
- CSJDJKUYRKSIDY-UHFFFAOYSA-N 1-sulfanylpropane-1-sulfonic acid Chemical compound CCC(S)S(O)(=O)=O CSJDJKUYRKSIDY-UHFFFAOYSA-N 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- MXZROAOUCUVNHX-UHFFFAOYSA-N 2-Aminopropanol Chemical compound CCC(N)O MXZROAOUCUVNHX-UHFFFAOYSA-N 0.000 description 2
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 description 2
- RDFMDVXONNIGBC-UHFFFAOYSA-N 2-aminoheptanoic acid Chemical compound CCCCCC(N)C(O)=O RDFMDVXONNIGBC-UHFFFAOYSA-N 0.000 description 2
- CFPHMAVQAJGVPV-UHFFFAOYSA-N 2-sulfanylbutanoic acid Chemical compound CCC(S)C(O)=O CFPHMAVQAJGVPV-UHFFFAOYSA-N 0.000 description 2
- JSGPBRQYMLFVJQ-UHFFFAOYSA-N 2-sulfanylhexanoic acid Chemical compound CCCCC(S)C(O)=O JSGPBRQYMLFVJQ-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- ZAJAQTYSTDTMCU-UHFFFAOYSA-N 3-aminobenzenesulfonic acid Chemical compound NC1=CC=CC(S(O)(=O)=O)=C1 ZAJAQTYSTDTMCU-UHFFFAOYSA-N 0.000 description 2
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 2
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- HJUPTTCWLNSGMM-UHFFFAOYSA-N C(C)O.[PH3]=O Chemical compound C(C)O.[PH3]=O HJUPTTCWLNSGMM-UHFFFAOYSA-N 0.000 description 2
- PKUPTHSCHYFTJO-UHFFFAOYSA-N C(CC)(=O)O.[PH3]=O Chemical compound C(CC)(=O)O.[PH3]=O PKUPTHSCHYFTJO-UHFFFAOYSA-N 0.000 description 2
- VMGXOMCHEONAPS-UHFFFAOYSA-N C(CC)C(=O)O.[PH3]=O Chemical compound C(CC)C(=O)O.[PH3]=O VMGXOMCHEONAPS-UHFFFAOYSA-N 0.000 description 2
- LJSRUPWYMSNNQB-UHFFFAOYSA-N C(CC)N.[PH3]=O Chemical compound C(CC)N.[PH3]=O LJSRUPWYMSNNQB-UHFFFAOYSA-N 0.000 description 2
- JYNXMDITJGYPMV-UHFFFAOYSA-N C(CC)O.[PH3]=O Chemical compound C(CC)O.[PH3]=O JYNXMDITJGYPMV-UHFFFAOYSA-N 0.000 description 2
- YWXVUMNVDLTYEA-UHFFFAOYSA-N C(CCC)O.[PH3]=O Chemical compound C(CCC)O.[PH3]=O YWXVUMNVDLTYEA-UHFFFAOYSA-N 0.000 description 2
- JJVGABUFLUUXPI-UHFFFAOYSA-N C(CCCC)O.[PH3]=O Chemical compound C(CCCC)O.[PH3]=O JJVGABUFLUUXPI-UHFFFAOYSA-N 0.000 description 2
- COXVDRKSRTUWBZ-UHFFFAOYSA-N C(CCCCC)O.[PH3]=O Chemical compound C(CCCCC)O.[PH3]=O COXVDRKSRTUWBZ-UHFFFAOYSA-N 0.000 description 2
- OFMDRUHLTKALJY-UHFFFAOYSA-N CC(=O)O.[PH3]=O Chemical compound CC(=O)O.[PH3]=O OFMDRUHLTKALJY-UHFFFAOYSA-N 0.000 description 2
- KXGHMLRRWJOYMZ-UHFFFAOYSA-N CO.[PH3]=O Chemical compound CO.[PH3]=O KXGHMLRRWJOYMZ-UHFFFAOYSA-N 0.000 description 2
- RZEJRSWNNYOCFS-UHFFFAOYSA-N CS(=O)(=O)O.[PH3]=O Chemical compound CS(=O)(=O)O.[PH3]=O RZEJRSWNNYOCFS-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QKMGWOQBAKYWOU-UHFFFAOYSA-N P.CCCO Chemical compound P.CCCO QKMGWOQBAKYWOU-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- GZDJWIBSWGEULA-UHFFFAOYSA-N [PH3]=O.C(C)N Chemical compound [PH3]=O.C(C)N GZDJWIBSWGEULA-UHFFFAOYSA-N 0.000 description 2
- PSUMDNCGDKPZLK-UHFFFAOYSA-N [PH3]=O.C(C)S(=O)(=O)O Chemical compound [PH3]=O.C(C)S(=O)(=O)O PSUMDNCGDKPZLK-UHFFFAOYSA-N 0.000 description 2
- LPWLYUSCYKEKJH-UHFFFAOYSA-N [PH3]=O.C(C1=CC=CC=C1)(=O)O Chemical compound [PH3]=O.C(C1=CC=CC=C1)(=O)O LPWLYUSCYKEKJH-UHFFFAOYSA-N 0.000 description 2
- RGJQNFVTLYGGOO-UHFFFAOYSA-N [PH3]=O.C1=CC=CC=C1 Chemical compound [PH3]=O.C1=CC=CC=C1 RGJQNFVTLYGGOO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229960000583 acetic acid Drugs 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- IYCUCQGVEZOMMV-UHFFFAOYSA-N aminomethanethiol Chemical compound NCS IYCUCQGVEZOMMV-UHFFFAOYSA-N 0.000 description 2
- 150000003927 aminopyridines Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- AXEPYENIMXTQSM-UHFFFAOYSA-N benzene;phosphane Chemical compound P.C1=CC=CC=C1 AXEPYENIMXTQSM-UHFFFAOYSA-N 0.000 description 2
- GONOPSZTUGRENK-UHFFFAOYSA-N benzyl(trichloro)silane Chemical compound Cl[Si](Cl)(Cl)CC1=CC=CC=C1 GONOPSZTUGRENK-UHFFFAOYSA-N 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- QXJGADQZKXDEJM-UHFFFAOYSA-N butan-1-ol;phosphane Chemical compound P.CCCCO QXJGADQZKXDEJM-UHFFFAOYSA-N 0.000 description 2
- SMTOKHQOVJRXLK-UHFFFAOYSA-N butane-1,4-dithiol Chemical compound SCCCCS SMTOKHQOVJRXLK-UHFFFAOYSA-N 0.000 description 2
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 2
- PMGCUTDLYCOBBY-UHFFFAOYSA-N butanoic acid;phosphane Chemical compound [PH4+].CCCC([O-])=O PMGCUTDLYCOBBY-UHFFFAOYSA-N 0.000 description 2
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000007806 chemical reaction intermediate Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- ZNEWHQLOPFWXOF-UHFFFAOYSA-N coenzyme M Chemical compound OS(=O)(=O)CCS ZNEWHQLOPFWXOF-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 2
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- KUZWNUWGBOIKGW-UHFFFAOYSA-N ethanamine phosphane Chemical compound P.CCN KUZWNUWGBOIKGW-UHFFFAOYSA-N 0.000 description 2
- WVRIJHGUJNXDRZ-UHFFFAOYSA-N ethane-1,1-diamine Chemical compound CC(N)N WVRIJHGUJNXDRZ-UHFFFAOYSA-N 0.000 description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 2
- MDYZNAADJDEDIF-UHFFFAOYSA-N ethanol;phosphane Chemical compound P.CCO MDYZNAADJDEDIF-UHFFFAOYSA-N 0.000 description 2
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 2
- AZHPCFQBBJISDG-UHFFFAOYSA-N ethyl(oxido)phosphanium Chemical compound CC[PH2]=O AZHPCFQBBJISDG-UHFFFAOYSA-N 0.000 description 2
- JLHMVTORNNQCRM-UHFFFAOYSA-N ethylphosphine Chemical compound CCP JLHMVTORNNQCRM-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- XVVLAOSRANDVDB-UHFFFAOYSA-N formic acid Chemical compound OC=O.OC=O XVVLAOSRANDVDB-UHFFFAOYSA-N 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- 229960002449 glycine Drugs 0.000 description 2
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011874 heated mixture Substances 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 2
- IEXUGUPSKXJLMN-UHFFFAOYSA-N hexan-1-ol;phosphane Chemical compound P.CCCCCCO IEXUGUPSKXJLMN-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229960004635 mesna Drugs 0.000 description 2
- JCEGDDHHSZJJHV-UHFFFAOYSA-N methanamine;phosphane Chemical compound P.NC JCEGDDHHSZJJHV-UHFFFAOYSA-N 0.000 description 2
- RTWNYYOXLSILQN-UHFFFAOYSA-N methanediamine Chemical compound NCN RTWNYYOXLSILQN-UHFFFAOYSA-N 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- HXZSFRJGDPGVNY-UHFFFAOYSA-N methyl(oxido)phosphanium Chemical compound C[PH2]=O HXZSFRJGDPGVNY-UHFFFAOYSA-N 0.000 description 2
- SAWKFRBJGLMMES-UHFFFAOYSA-N methylphosphine Chemical compound PC SAWKFRBJGLMMES-UHFFFAOYSA-N 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 2
- 235000021313 oleic acid Nutrition 0.000 description 2
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical group [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 2
- MDMMXHFBUHIKQX-UHFFFAOYSA-N pentan-1-ol;phosphane Chemical compound P.CCCCCO MDMMXHFBUHIKQX-UHFFFAOYSA-N 0.000 description 2
- KMTUBAIXCBHPIZ-UHFFFAOYSA-N pentane-1,5-dithiol Chemical compound SCCCCCS KMTUBAIXCBHPIZ-UHFFFAOYSA-N 0.000 description 2
- WEYHWRWGAACKIL-UHFFFAOYSA-N pentylphosphane Chemical compound CCCCCP WEYHWRWGAACKIL-UHFFFAOYSA-N 0.000 description 2
- JKGBWWAMQLLOQB-UHFFFAOYSA-N phosphane;propan-1-amine Chemical compound P.CCCN JKGBWWAMQLLOQB-UHFFFAOYSA-N 0.000 description 2
- MQFOBQNNBFJYDU-UHFFFAOYSA-N phosphane;propanoic acid Chemical compound [PH4+].CCC([O-])=O MQFOBQNNBFJYDU-UHFFFAOYSA-N 0.000 description 2
- PXBGQFYGVFUKNE-UHFFFAOYSA-N phosphanium;acetate Chemical compound [PH4+].CC([O-])=O PXBGQFYGVFUKNE-UHFFFAOYSA-N 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 2
- ZJLMKPKYJBQJNH-UHFFFAOYSA-N propane-1,3-dithiol Chemical compound SCCCS ZJLMKPKYJBQJNH-UHFFFAOYSA-N 0.000 description 2
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 2
- NNOBHPBYUHDMQF-UHFFFAOYSA-N propylphosphine Chemical compound CCCP NNOBHPBYUHDMQF-UHFFFAOYSA-N 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- WHMDPDGBKYUEMW-UHFFFAOYSA-N pyridine-2-thiol Chemical compound SC1=CC=CC=N1 WHMDPDGBKYUEMW-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- DWGGYBRHFHGTBF-UHFFFAOYSA-N sulfanylmethanesulfonic acid Chemical compound OS(=O)(=O)CS DWGGYBRHFHGTBF-UHFFFAOYSA-N 0.000 description 2
- GXDPEHGCHUDUFE-UHFFFAOYSA-N sulfanylmethanol Chemical compound OCS GXDPEHGCHUDUFE-UHFFFAOYSA-N 0.000 description 2
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- 125000006732 (C1-C15) alkyl group Chemical group 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- JDGZXSVPVMNXMW-UHFFFAOYSA-N 2-sulfanylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S JDGZXSVPVMNXMW-UHFFFAOYSA-N 0.000 description 1
- BZGHIQTWNAKSCX-UHFFFAOYSA-N 2-sulfanylheptanoic acid Chemical compound CCCCCC(S)C(O)=O BZGHIQTWNAKSCX-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- AVYSXKRZARLUCI-UHFFFAOYSA-N C(CC)S(=O)(=O)O.[PH3]=O Chemical compound C(CC)S(=O)(=O)O.[PH3]=O AVYSXKRZARLUCI-UHFFFAOYSA-N 0.000 description 1
- ARZGJKJDNXZUAV-UHFFFAOYSA-N CN.[PH3]=O Chemical compound CN.[PH3]=O ARZGJKJDNXZUAV-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- VPIAKHNXCOTPAY-UHFFFAOYSA-N Heptane-1-thiol Chemical compound CCCCCCCS VPIAKHNXCOTPAY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 150000001266 acyl halides Chemical class 0.000 description 1
- 125000005571 adamantylene group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- CVSPBQPCZLCMKN-UHFFFAOYSA-N benzenesulfonic acid;phosphane Chemical compound P.OS(=O)(=O)C1=CC=CC=C1 CVSPBQPCZLCMKN-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- FEYBQJQBTXMRPU-UHFFFAOYSA-N butyl(oxido)phosphanium Chemical compound CCCC[PH2]=O FEYBQJQBTXMRPU-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- NEHMKBQYUWJMIP-NJFSPNSNSA-N chloro(114C)methane Chemical compound [14CH3]Cl NEHMKBQYUWJMIP-NJFSPNSNSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000004976 cyclobutylene group Chemical group 0.000 description 1
- 125000004977 cycloheptylene group Chemical group 0.000 description 1
- 125000004956 cyclohexylene group Chemical group 0.000 description 1
- 125000004978 cyclooctylene group Chemical group 0.000 description 1
- 125000004979 cyclopentylene group Chemical group 0.000 description 1
- 125000004980 cyclopropylene group Chemical group 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- OOIFZEGIPJXJEH-UHFFFAOYSA-N ethanesulfonic acid;phosphane Chemical compound P.CCS(O)(=O)=O OOIFZEGIPJXJEH-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- SZGJLNUONPHZOK-UHFFFAOYSA-N methanesulfonic acid;phosphane Chemical compound [PH4+].CS([O-])(=O)=O SZGJLNUONPHZOK-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000006574 non-aromatic ring group Chemical group 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- GAQFHCDAALQBRI-UHFFFAOYSA-N phosphane;propane-1-sulfonic acid Chemical compound P.CCCS(O)(=O)=O GAQFHCDAALQBRI-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/70—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing phosphorus
- C09K11/701—Chalcogenides
- C09K11/703—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/381—Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/892—Liquid phase deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/895—Manufacture, treatment, or detection of nanostructure having step or means utilizing chemical property
- Y10S977/896—Chemical synthesis, e.g. chemical bonding or breaking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Abstract
前記裸半導体ナノ結晶に直接結合する水分子と、
を含む半導体ナノ結晶及びその調製方法。
Description
本開示の一実施形態は、高い発光効率を有する半導体ナノ結晶を提供する。
本開示の一実施形態によると、裸半導体ナノ結晶と、前記裸半導体ナノ結晶に直接結合する水分子とを含む半導体ナノ結晶が提供される。
一実施形態に係る半導体ナノ結晶は、発光効率を改善しうる。
本開示は、以下の発明の詳細な説明及び添付の図面を参照することによってより詳しく説明されるが、本開示の一部が示されているにすぎず、全てが示されているわけではない。しかしながら、本開示は、多くの異なる形態に具現化されてもよく、本明細書で説明する実施形態に限定的に解釈されるべきではなく、むしろこれらの実施形態は、本開示が徹底的かつ完全になるように提供され、本発明の教示は当業者に完全に伝えられるだろう。全体にわたって、同一の参照数字及び参照変数は、同一の要素を指す。
パルミチン酸(0.6mmol)及びオクタデセン(10mL)の混合物に酢酸インジウム(0.2mmol)を添加し、減圧下で約120℃に加熱し、その温度で約10分間維持した。一方、トリメチルシリル−3−ホスフィン約0.075mmol及びトリオクチルホスフィン約0.45mmolをオクタデセン約0.78mLと混合することにより注入溶液を調製した。減圧条件下に維持した前記混合物を窒素雰囲気下で約280℃に加熱し、加熱した混合液の中に前記注入溶液を注入した。注入後約1時間反応を行い、当該混合物をその後室温まで冷却した。続いて、当該冷却した混合物にアセトンを注入することによりInPナノ結晶を沈殿させた。当該沈殿をトルエン約1mLに溶解することによりInPナノ結晶溶液を調製した。
調製例1により調製したInP/ZnSナノ結晶溶液約0.3mLに約水0.02mLを約25℃の窒素下で加え、維持した。
調製例1により調製したInP/ZnSナノ結晶溶液約0.3mLに約水0.02mLを約25℃の窒素雰囲気下で添加した。続いて、約450nmの光を照射し、維持した。
調製例1により調製したInP/ZnSナノ結晶溶液を、水の添加なしに、約25℃の空気下に放置した。
調製例1により調製したInP/ZnSナノ結晶溶液を、水の添加なしに、約450nmの光を照射しながら、放置した。
パルミチン酸(1.5mmol)及びオクタデセン(10mL)の混合物に酢酸インジウム(0.5mmol)を添加し、減圧下で約120℃に加熱し、室温で約1時間維持した。一方、トリメチルシリル−3−ホスフィン約0.25mmol及びトリオクチルホスフィン約0.75mmolをオクタデセン約0.8mLと混合することにより注入溶液を調製した。減圧条件下に維持した前記混合物を窒素雰囲気下で約48℃に冷却し、冷却した混合液の中に前記注入溶液を注入することによりInP反応中間体を製造した。
調製例2により調製したInP/InP/ZnSナノ結晶溶液約0.3mLに水約0.02mLを約25℃の窒素下で加え、維持した。
調製例2により調製したInP/InP/ZnSナノ結晶溶液約0.3mLに約水0.02mL及びブタノール約0.04mLを約25℃の窒素雰囲気下で加え、維持した。
調製例2により調製したInP/InP/ZnSナノ結晶溶液を、水なしで、約25℃の空気下に維持した。
パルミチン酸(0.6mmol)及びオクタデセン(10mL)の混合物に酢酸インジウム(0.2mmol)を添加し、減圧下で約120℃に加熱し、室温に冷却した。一方、トリメチルシリル−3−ホスフィン約0.2mmol及びトリオクチルホスフィン約1.2mmolをオクタデセン約0.6mLと混合することにより注入溶液を調製した。窒素雰囲気下で、前記混合物に前記注入溶液を注入した。注入後、得られた溶液を約320℃に加熱し、室温に冷却した。続いて、当該冷却した混合物にアセトンを注入することによりInPナノ結晶を沈殿させた。当該沈殿をトルエン約2mLに溶解することによりInPナノ結晶溶液を調製した。
調製例3により調製したInP/ZnSナノ結晶溶液約0.3mLに約水0.02mLを約25℃の窒素雰囲気下で添加した。続いて、約450nmの波長の光を照射し、維持した。
調製例3により調製したInP/ZnSナノ結晶溶液を、水の添加又は光の照射なしに、約25℃の空気下に維持した。
Claims (29)
- 裸半導体ナノ結晶と、
前記裸半導体ナノ結晶に直接結合する水分子と、
を含む半導体ナノ結晶。 - 前記水分子が、前記裸半導体ナノ結晶と、配位結合、イオン結合、若しくは水素結合、又はファンデルワールス力を介して結合している、請求項1に記載の半導体ナノ結晶。
- 前記裸半導体ナノ結晶と結合する有機配位子をさらに有し、
前記有機配位子は、下記化学式1で表される、請求項1に記載の半導体ナノ結晶。 - 前記裸半導体ナノ結晶は、コア構造又はコア−シェル構造を有する、請求項1に記載の半導体ナノ結晶。
- 前記コア又はシェルは、独立して、II−VI族半導体材料、III−V族半導体材料、IV族半導体材料、又はIV−VI族半導体材料を含む、請求項4に記載の半導体ナノ結晶。
- 前記裸半導体ナノ結晶は、−OH、−O、又は−Hの官能基の1以上と結合する、請求項1に記載の半導体ナノ結晶。
- III−V族半導体をコアに含み、約50%以上の発光効率を有する、半導体ナノ結晶。
- 70%以上の発光効率を有する、請求項7に記載の半導体ナノ結晶。
- 約60nm以下の半値全幅を有する、請求項7に記載の半導体ナノ結晶。
- 約70%以上の発光効率、約45nm以下のFWHM、及び約510〜約560nmの発光ピーク波長を有する、請求項7に記載の半導体ナノ結晶。
- 約70%以上の発光効率、約50nm以下の半値全幅、及び約560〜約580nmの発光ピーク波長を有する、請求項7に記載の半導体ナノ結晶。
- 約70%以上の発光効率、約60nm以下の半値全幅、及び約580〜約640nmの発光ピーク波長を有する、請求項7に記載の半導体ナノ結晶。
- 第一の半導体ナノ結晶を水と混合することを含む、半導体ナノ結晶の調製方法。
- 前記第一の半導体ナノ結晶に対する前記水の重量比は、約1:1〜約100:1である、請求項13に記載の方法。
- 前記第一の半導体ナノ結晶及び前記水の混合は、
有機溶媒及び前記第一の半導体ナノ結晶を含む半導体ナノ結晶溶液を調製することと、
前記半導体ナノ結晶溶液に前記水を加えることと、
を含む、請求項13に記載の方法。 - 前記水は、前記半導体ナノ結晶溶液約100体積部を基準として、約0.01体積部〜約100体積部の量で添加される、請求項15に記載の方法。
- 前記第一の半導体ナノ結晶と極性化合物とを混合することをさらに含む、請求項13に記載の方法。
- 前記極性化合物は、前記水約100体積部を基準として、約0.1〜約10体積部の量で存在する、請求項17に記載の方法。
- 前記第一の半導体ナノ結晶及び前記水の混合は、不活性ガス雰囲気下で行われる、請求項13に記載の方法。
- 前記半導体ナノ結晶溶液に、光を照射することをさらに含む、請求項13に記載の方法。
- 前記光は、前記半導体ナノ結晶のエネルギーバンドギャップよりも高いエネルギーを有する、請求項20に記載の方法。
- 前記光は、前記半導体ナノ結晶の発光波長よりも短い波長を有する、請求項20に記載の方法。
- 前記第一の半導体ナノ結晶は、コア構造又はコア−シェル構造を有する、請求項13に記載の方法。
- 前記第一の半導体ナノ結晶は、当該第一の半導体ナノ結晶の表面で、下記化学式1で表される有機配位子と結合する、請求項13に記載の方法。
- マトリックスと、
請求項1に記載の半導体ナノ結晶と、
を含む、半導体ナノ結晶複合体。 - 前記マトリックスは、ポリ(ビニルアルコール)、ポリ(ビニルカルバゾール)、ポリ(フッ化ビニル)、ポリ(メチルビニルエーテル)、ポリ(エチレン)、ポリ(プロピレン)、ポリ(スチレン)、ポリ(ビニルピリジン)、ポリ(エチレンオキシド)、ポリ(アルキルアクリレート)、ポリ(シラン)、ポリ(カーボネート)、ポリ(シロキサン)、(ポリ)アクリレート、エポキシ樹脂、チタニア、シリカ、アルミナ、ジルコニア、インジウムスズ酸化物、又はそれらの混合物を含む、請求項25に記載の半導体ナノ結晶複合体。
- 請求項1に記載の半導体ナノ結晶を含む、発光デバイス。
- 第一の電極及び第二の電極を含み、
前記半導体ナノ結晶又は半導体ナノ結晶複合体は、前記第一及び第二の電極の間に配置される、請求項27に記載の発光デバイス。 - 光源を含み、
前記半導体ナノ結晶又は半導体ナノ結晶複合体は、前記光源上に配置される、
請求項27に記載の発光デバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0062149 | 2009-07-08 | ||
KR20090062149 | 2009-07-08 | ||
KR10-2010-0055436 | 2010-06-11 | ||
KR1020100055436A KR101699540B1 (ko) | 2009-07-08 | 2010-06-11 | 반도체 나노 결정 및 그 제조 방법 |
PCT/KR2010/004413 WO2011005023A2 (en) | 2009-07-08 | 2010-07-07 | Semiconductor nanocrystal and preparation method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012532953A true JP2012532953A (ja) | 2012-12-20 |
JP5681180B2 JP5681180B2 (ja) | 2015-03-04 |
Family
ID=43612191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012519473A Active JP5681180B2 (ja) | 2009-07-08 | 2010-07-07 | 半導体ナノ結晶及びその調製方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US9570549B2 (ja) |
EP (2) | EP3715318B1 (ja) |
JP (1) | JP5681180B2 (ja) |
KR (2) | KR101699540B1 (ja) |
CN (1) | CN102482077B (ja) |
WO (1) | WO2011005023A2 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017500407A (ja) * | 2013-12-17 | 2017-01-05 | スリーエム イノベイティブ プロパティズ カンパニー | フタル酸誘導体を含む複合ナノ粒子 |
WO2017150297A1 (ja) * | 2016-02-29 | 2017-09-08 | 富士フイルム株式会社 | 半導体ナノ粒子、分散液およびフィルム |
WO2018110406A1 (ja) * | 2016-12-12 | 2018-06-21 | Dic株式会社 | 発光用ナノ結晶複合体 |
JP2018526468A (ja) * | 2015-06-02 | 2018-09-13 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 量子ドット、これを含む組成物および量子ドットの製造方法 |
WO2019069737A1 (ja) * | 2017-10-04 | 2019-04-11 | Dic株式会社 | 粒子、インクおよび発光素子 |
WO2019188679A1 (ja) * | 2018-03-27 | 2019-10-03 | 日本化学工業株式会社 | InP量子ドットの製造方法 |
JP2020003608A (ja) * | 2018-06-27 | 2020-01-09 | 国立大学法人電気通信大学 | 量子ドットシート、これを用いた光電子デバイス、及び量子ドットシートの作製方法 |
JP2020526596A (ja) * | 2017-07-17 | 2020-08-31 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | リガンド修飾された量子ドット組成物、リガンド修飾された量子ドット層及びそれらの作製方法、量子ドット発光ダイオード |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101699540B1 (ko) * | 2009-07-08 | 2017-01-25 | 삼성전자주식회사 | 반도체 나노 결정 및 그 제조 방법 |
CA2775324C (en) | 2009-09-23 | 2018-05-15 | Crystalplex Corporation | Passivated nanoparticles |
WO2011060180A1 (en) | 2009-11-11 | 2011-05-19 | Qd Vision, Inc. | Device including quantum dots |
US20140339497A1 (en) * | 2011-06-20 | 2014-11-20 | Crystalplex Corporation | Stabilized nanocrystals |
KR101537296B1 (ko) | 2012-10-26 | 2015-07-17 | 삼성전자 주식회사 | 반도체 나노결정 및 그 제조방법 |
JP6177515B2 (ja) * | 2012-10-31 | 2017-08-09 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
JP6086721B2 (ja) | 2012-10-31 | 2017-03-01 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
KR20150001528A (ko) * | 2013-06-27 | 2015-01-06 | 삼성전자주식회사 | 수직형 유기 발광 트랜지스터 및 이를 구비한 유기 엘이디 조명장치 |
US11746290B2 (en) | 2013-09-26 | 2023-09-05 | Samsung Electronics Co., Ltd. | Nanocrystal particles and processes for synthesizing the same |
KR101525524B1 (ko) * | 2013-09-26 | 2015-06-03 | 삼성전자주식회사 | 나노 결정 입자 및 그의 합성 방법 |
EP2853578B1 (en) | 2013-09-26 | 2017-08-30 | Samsung Electronics Co., Ltd | Nanocrystal particles and processes for synthesizing the same |
US9778510B2 (en) * | 2013-10-08 | 2017-10-03 | Samsung Electronics Co., Ltd. | Nanocrystal polymer composites and production methods thereof |
CA2949556C (en) | 2014-05-29 | 2023-03-21 | Crystalplex Corporation | Dispersion system for quantum dots |
CN104979485A (zh) * | 2015-07-08 | 2015-10-14 | Tcl集团股份有限公司 | 一种高性能的量子点发光二极管及其制备方法 |
KR102643462B1 (ko) * | 2015-09-22 | 2024-03-05 | 삼성전자주식회사 | Led 패키지, 이를 포함하는 백라이트 유닛과 조명장치 및 액정 디스플레이 장치 |
US10541134B2 (en) * | 2015-11-02 | 2020-01-21 | The University Of Chicago | Halometallate ligand-capped semiconductor nanocrystals |
CN105552241B (zh) * | 2016-01-13 | 2017-11-03 | 京东方科技集团股份有限公司 | 可交联量子点及其制备方法、阵列基板及其制备方法 |
CA3024847A1 (en) | 2016-05-19 | 2017-11-23 | Crystalplex Corporation | Cadmium-free quantum dots, tunable quantum dots, quantum dot containing polymer, articles, films, and 3d structure containing them and methods of making and using them |
EP3336158B1 (en) * | 2016-12-14 | 2023-03-08 | Samsung Electronics Co., Ltd. | Emissive nanocrystal particle, method of preparing the same and device including emissive nanocrystal particle |
KR102618410B1 (ko) | 2017-05-11 | 2023-12-27 | 삼성전자주식회사 | 반도체 나노결정 입자 및 이를 포함하는 소자 |
KR102395049B1 (ko) | 2017-10-25 | 2022-05-04 | 삼성전자주식회사 | 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자 |
CN108172603A (zh) * | 2018-01-03 | 2018-06-15 | 京东方科技集团股份有限公司 | 一种量子点发光二极管基板及其制备方法、显示面板 |
CN110739385B (zh) * | 2018-07-20 | 2021-07-20 | 纳晶科技股份有限公司 | 发光器件及其制作方法 |
CN110858632B (zh) | 2018-08-23 | 2024-07-12 | 三星电子株式会社 | 量子点器件和量子点 |
EP3867332A1 (en) * | 2018-10-15 | 2021-08-25 | Merck Patent GmbH | Nanoparticle |
KR102711312B1 (ko) | 2019-04-18 | 2024-09-26 | 삼성전자주식회사 | 코어쉘 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR102711311B1 (ko) | 2019-04-18 | 2024-09-26 | 삼성전자주식회사 | 리튬 함유 무카드뮴 양자점, 그 제조 방법, 및 이를 포함하는 전자 소자 |
KR102652436B1 (ko) | 2019-04-18 | 2024-03-27 | 삼성전자주식회사 | ZnTeSe 기반의 양자점 |
KR20200135688A (ko) | 2019-05-24 | 2020-12-03 | 삼성디스플레이 주식회사 | 양자점-폴리머 복합체 패턴, 그 제조방법, 및 이를 포함하는 전자 소자 |
KR102103009B1 (ko) | 2019-08-05 | 2020-04-21 | 주식회사 신아티앤씨 | 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자 |
KR102236315B1 (ko) | 2020-04-14 | 2021-04-05 | 주식회사 신아티앤씨 | 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자 |
KR102236316B1 (ko) | 2020-04-14 | 2021-04-05 | 주식회사 신아티앤씨 | 양자점 나노입자의 제조방법, 상기 방법으로 제조된 양자점 나노입자, 코어-쉘 구조의 양자점 나노입자, 및 발광소자 |
US11884858B2 (en) * | 2020-06-18 | 2024-01-30 | Samsung Electronics Co., Ltd. | Semiconductor nanocrystal, light-emitting film, production method of the light-emitting film, light emitting device, and display device |
TW202219236A (zh) * | 2020-07-08 | 2022-05-16 | 美商納諾西斯有限公司 | 改善具有包含薄金屬氧化物塗層的qds之裝置性能的方法 |
KR102504357B1 (ko) * | 2020-09-21 | 2023-02-28 | 포항공과대학교 산학협력단 | Iii족 및 v족 원소를 포함하는 할로겐 원소 도핑 나노클러스터 알코올 센서 및 알코올 정제방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002525394A (ja) * | 1998-09-18 | 2002-08-13 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
WO2009028282A1 (ja) * | 2007-08-28 | 2009-03-05 | National Institute Of Advanced Industrial Science And Technology | 新規ナノ粒子発光体 |
JP2009132771A (ja) * | 2007-11-29 | 2009-06-18 | Konica Minolta Medical & Graphic Inc | コア/シェル型半導体ナノ粒子とその製造方法 |
JP2010138367A (ja) * | 2008-04-23 | 2010-06-24 | National Institute Of Advanced Industrial Science & Technology | 水分散性を有する高発光効率ナノ粒子及びその製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL103346C (ja) | 1957-04-25 | |||
US3221651A (en) | 1962-08-03 | 1965-12-07 | Ohg Cigardi S P A | Multi-units sheet-fed printing machine drive |
CN1074471C (zh) * | 1997-12-25 | 2001-11-07 | 中国科学院金属研究所 | 一种制备单壁纳米碳管的方法 |
US6326144B1 (en) | 1998-09-18 | 2001-12-04 | Massachusetts Institute Of Technology | Biological applications of quantum dots |
US6251303B1 (en) | 1998-09-18 | 2001-06-26 | Massachusetts Institute Of Technology | Water-soluble fluorescent nanocrystals |
US6306610B1 (en) | 1998-09-18 | 2001-10-23 | Massachusetts Institute Of Technology | Biological applications of quantum dots |
US6617583B1 (en) | 1998-09-18 | 2003-09-09 | Massachusetts Institute Of Technology | Inventory control |
EP1116036B1 (en) | 1998-09-18 | 2004-08-11 | Massachusetts Institute Of Technology | Water-soluble fluorescent semiconductor nanocrystals |
EP2306195A3 (en) | 1998-09-18 | 2012-04-25 | Massachusetts Institute of Technology | Biological applications of semiconductor nanocrystals |
US20030066998A1 (en) | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
WO2004066361A2 (en) | 2003-01-22 | 2004-08-05 | The Board Of Trustees Of The University Of Arkansas | Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
US7645397B2 (en) * | 2004-01-15 | 2010-01-12 | Nanosys, Inc. | Nanocrystal doped matrixes |
US7746681B2 (en) * | 2005-01-07 | 2010-06-29 | Invisage Technologies, Inc. | Methods of making quantum dot films |
ATE551723T1 (de) | 2005-08-25 | 2012-04-15 | Edward Sargent | Optische quantum-dot-vorrichtungen mit erhöhter verstärkung und empfindlichkeit |
KR20080069085A (ko) * | 2007-01-22 | 2008-07-25 | 삼성전자주식회사 | 탠덤 구조의 나노점 발광 다이오드 및 그 제조 방법 |
KR100745317B1 (ko) | 2007-03-28 | 2007-08-01 | 삼성전자주식회사 | 화합물 반도체 나노결정의 표면 처리를 통한 양자효율 향상 |
US8076410B2 (en) * | 2007-10-04 | 2011-12-13 | Nanosi Advanced Technologies, Inc. | Luminescent silicon nanoparticle-polymer composites, composite wavelength converter and white LED |
KR101699540B1 (ko) * | 2009-07-08 | 2017-01-25 | 삼성전자주식회사 | 반도체 나노 결정 및 그 제조 방법 |
-
2010
- 2010-06-11 KR KR1020100055436A patent/KR101699540B1/ko active IP Right Grant
- 2010-07-07 US US12/831,816 patent/US9570549B2/en active Active
- 2010-07-07 EP EP20166785.4A patent/EP3715318B1/en active Active
- 2010-07-07 CN CN201080039453.5A patent/CN102482077B/zh active Active
- 2010-07-07 JP JP2012519473A patent/JP5681180B2/ja active Active
- 2010-07-07 WO PCT/KR2010/004413 patent/WO2011005023A2/en active Application Filing
- 2010-07-07 EP EP10797297.8A patent/EP2451741B1/en active Active
-
2017
- 2017-01-18 KR KR1020170008907A patent/KR101813689B1/ko active IP Right Grant
- 2017-02-10 US US15/429,816 patent/US10759992B2/en active Active
-
2020
- 2020-08-31 US US17/007,283 patent/US11898073B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002525394A (ja) * | 1998-09-18 | 2002-08-13 | マサチューセッツ インスティテュート オブ テクノロジー | 水溶性蛍光半導体ナノ結晶 |
WO2009028282A1 (ja) * | 2007-08-28 | 2009-03-05 | National Institute Of Advanced Industrial Science And Technology | 新規ナノ粒子発光体 |
JP2009132771A (ja) * | 2007-11-29 | 2009-06-18 | Konica Minolta Medical & Graphic Inc | コア/シェル型半導体ナノ粒子とその製造方法 |
JP2010138367A (ja) * | 2008-04-23 | 2010-06-24 | National Institute Of Advanced Industrial Science & Technology | 水分散性を有する高発光効率ナノ粒子及びその製造方法 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017500407A (ja) * | 2013-12-17 | 2017-01-05 | スリーエム イノベイティブ プロパティズ カンパニー | フタル酸誘導体を含む複合ナノ粒子 |
JP2018526468A (ja) * | 2015-06-02 | 2018-09-13 | サムスン エスディアイ カンパニー, リミテッドSamsung Sdi Co., Ltd. | 量子ドット、これを含む組成物および量子ドットの製造方法 |
WO2017150297A1 (ja) * | 2016-02-29 | 2017-09-08 | 富士フイルム株式会社 | 半導体ナノ粒子、分散液およびフィルム |
KR20180099937A (ko) * | 2016-02-29 | 2018-09-05 | 후지필름 가부시키가이샤 | 반도체 나노 입자, 분산액 및 필름 |
JPWO2017150297A1 (ja) * | 2016-02-29 | 2018-09-27 | 富士フイルム株式会社 | 半導体ナノ粒子、分散液およびフィルム |
KR101996201B1 (ko) | 2016-02-29 | 2019-07-03 | 후지필름 가부시키가이샤 | 반도체 나노 입자, 분산액 및 필름 |
WO2018110406A1 (ja) * | 2016-12-12 | 2018-06-21 | Dic株式会社 | 発光用ナノ結晶複合体 |
US11453820B2 (en) | 2017-07-17 | 2022-09-27 | Beijing Boe Technology Development Co., Ltd. | Ligand-modified quantum dot composition, ligand-modified quantum dot layer, preparation methods thereof, quantum dot light emitting diode |
JP7190907B2 (ja) | 2017-07-17 | 2022-12-16 | 京東方科技集團股▲ふん▼有限公司 | リガンド修飾された量子ドット組成物、リガンド修飾された量子ドット層及びそれらの作製方法、量子ドット発光ダイオード |
JP2020526596A (ja) * | 2017-07-17 | 2020-08-31 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | リガンド修飾された量子ドット組成物、リガンド修飾された量子ドット層及びそれらの作製方法、量子ドット発光ダイオード |
WO2019069737A1 (ja) * | 2017-10-04 | 2019-04-11 | Dic株式会社 | 粒子、インクおよび発光素子 |
JPWO2019069737A1 (ja) * | 2017-10-04 | 2020-10-22 | Dic株式会社 | 粒子、インクおよび発光素子 |
WO2019188679A1 (ja) * | 2018-03-27 | 2019-10-03 | 日本化学工業株式会社 | InP量子ドットの製造方法 |
JPWO2019188679A1 (ja) * | 2018-03-27 | 2021-04-22 | 日本化学工業株式会社 | InP量子ドットの製造方法 |
JP7177142B2 (ja) | 2018-03-27 | 2022-11-22 | 日本化学工業株式会社 | InP量子ドットの製造方法 |
JP7109062B2 (ja) | 2018-06-27 | 2022-07-29 | 国立大学法人電気通信大学 | 量子ドットシート、これを用いた光電子デバイス、及び量子ドットシートの作製方法 |
JP2020003608A (ja) * | 2018-06-27 | 2020-01-09 | 国立大学法人電気通信大学 | 量子ドットシート、これを用いた光電子デバイス、及び量子ドットシートの作製方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2451741A4 (en) | 2013-04-03 |
US9570549B2 (en) | 2017-02-14 |
WO2011005023A3 (en) | 2011-04-28 |
US10759992B2 (en) | 2020-09-01 |
US20170152436A1 (en) | 2017-06-01 |
EP2451741B1 (en) | 2021-08-25 |
EP2451741A2 (en) | 2012-05-16 |
KR101813689B1 (ko) | 2017-12-29 |
CN102482077B (zh) | 2014-12-17 |
CN102482077A (zh) | 2012-05-30 |
JP5681180B2 (ja) | 2015-03-04 |
KR20170010874A (ko) | 2017-02-01 |
EP3715318A1 (en) | 2020-09-30 |
WO2011005023A2 (en) | 2011-01-13 |
US20200399532A1 (en) | 2020-12-24 |
US20110006281A1 (en) | 2011-01-13 |
KR20110004775A (ko) | 2011-01-14 |
KR101699540B1 (ko) | 2017-01-25 |
US11898073B2 (en) | 2024-02-13 |
EP3715318B1 (en) | 2023-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5681180B2 (ja) | 半導体ナノ結晶及びその調製方法 | |
CN110240896B (zh) | 量子点以及包括其的电致发光器件和电子器件 | |
JP7235530B2 (ja) | 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子 | |
US11011720B2 (en) | Semiconductor nanocrystal particles, production methods thereof, and devices including the same | |
KR20110140049A (ko) | 반도체 나노 결정 | |
EP3696245A1 (en) | Light emitting device and display device including the same | |
US20220348824A1 (en) | Core shell quantum dot and electronic device including the same | |
KR20200023243A (ko) | 양자점 소자 및 양자점 | |
US11981850B2 (en) | Quantum dots, and an electronic device including the same | |
KR20220012827A (ko) | 양자점 및 이를 포함하는 양자점-폴리머 복합체 및 전자 소자 | |
KR20110108954A (ko) | 반도체 나노 결정 및 그 제조 방법 | |
Zheng et al. | Ligand exchange functionalization of CIS quantum dots for CIS/ZnO film heterojunctions | |
EP3617292A1 (en) | Electronic device including quantum dots | |
KR102718276B1 (ko) | 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자 | |
US12060511B2 (en) | Core-shell quantum dots having high quantum efficiency, and an electronic device including the same | |
KR102718896B1 (ko) | 양자점을 포함하는 전자 소자 | |
US20240247188A1 (en) | Semiconductor nanoparticle, production method thereof, and electroluminescent device including the same | |
KR102718894B1 (ko) | 반도체 나노결정 입자 및 그의 제조 방법과 이를 포함하는 소자 | |
JP2023170674A (ja) | 量子ドット発光素子及び表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140305 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140311 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140611 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140618 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140702 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141209 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150108 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5681180 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |