JP2012530384A - 凹型電極を有するキャパシタを備えるメモリデバイスを形成する方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 83
- 239000003990 capacitor Substances 0.000 title claims abstract description 81
- 238000005530 etching Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 16
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 15
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000010292 electrical insulation Methods 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 142
- 239000010949 copper Substances 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015801 BaSrTiO Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
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Abstract
【選択図】 図1
Description
(1)金属を成膜して底部電極を生成する前、および/または、生成している間に、孔部530の上側角部分を斜面状にするべく、スパッタリングを用いてTi、Ta、TiNまたはTaNを成膜する。成膜は、上側角部分で「ネットエッチング」が見られるような方式で行なわれる。この「ネットエッチング」条件によって、底部プレートが凹に形成される。
(2)キャパシタのパターニング中にエッチングを広げて、上側角部分には金属を成膜しないようにしつつ、底部および側壁に電極用の金属を成膜するためのスパッタリングをより効果的に行なえるようにする。
Claims (23)
- 底部を形成する下側部分および側壁を形成する上側部分によって画定されている孔部と、
前記孔部に成膜されている金属−絶縁体−金属(MIM)キャパシタと
を備え、
前記MIMキャパシタは、
前記孔部内に成膜されている第1の導電層と、
前記第1の導電層上に成膜されている電気絶縁層と、
前記第1の電気絶縁層上に成膜されている第2の導電層と
を有し、
前記第1の導電層または前記第2の導電層を凹に形成する選択的エッチングを続いて行うために、前記MIMキャパシタの上側部分は除去されて、前記第1の導電層および前記第2の導電層の上面を露出させる埋め込み型メモリデバイス。 - 前記選択的エッチングは、前記電気絶縁層または前記第2の導電層のいずれの露出部分も実質的にエッチングすることなく、前記第1の導電層を凹に形成する選択的ウェットエッチングを含む請求項1に記載の埋め込み型メモリデバイス。
- 前記第1の電気絶縁層は、窒化チタン(TiN)であり、前記第2の電気絶縁層は、タンタル(Ta)または窒化タンタル(TaN)を含む請求項1に記載の埋め込み型メモリデバイス。
- 前記第2の電気絶縁層は、TiNを含み、前記第1の電気絶縁層は、TaまたはTaNを含む請求項1に記載の埋め込み型メモリデバイス。
- 前記選択的ウェットエッチングは、過酸化水素を含む請求項1に記載の埋め込み型メモリデバイス。
- 前記MIMキャパシタの前記上側部分を除去する前に、前記第2の導電層上に成膜される伝導性材料をさらに備える請求項1に記載の埋め込み型メモリデバイス。
- 埋め込み型MIMキャパシタを形成する方法であって、
底部を形成している下側部分および側壁を形成している上側部分によって画定される孔部を形成する段階と、
前記孔部内に第1の導電層を成膜する段階と、
前記第1の導電層上に電気絶縁層を成膜する段階と、
前記電気絶縁層上に第2の導電層を成膜する段階と、
前記MIMキャパシタの上側部分を除去して、前記第1の導電層および前記第2の導電層の上面を露出させる段階と、
前記第1の導電層または前記第2の導電層に選択的エッチングを行って、前記第1の導電層または前記第2の導電層を凹に形成する段階と
を備える方法。 - 前記選択的エッチングは、前記電気絶縁層または前記第2の導電層のいずれの露出部分も実質的にエッチングすることなく、前記第1の導電層を凹に形成する選択的ウェットエッチングを含む請求項7に記載の方法。
- 前記第1の電気絶縁層は、窒化チタン(TiN)を含み、前記第2の電気絶縁層は、タンタル(Ta)または窒化タンタル(TaN)を含む請求項7に記載の方法。
- 前記第2の電気絶縁層は、TiNを含み、前記第1の電気絶縁層は、TaまたはTaNを含む請求項7に記載の方法。
- 前記MIMキャパシタの前記上側部分を除去する前に、前記第2の導電層上に伝導性材料を成膜する段階をさらに備える請求項7に記載の方法。
- 底部を形成する下側部分および側壁を形成する上側部分によって画定されている孔部と、
前記孔部に成膜されている金属−絶縁体−金属(MIM)キャパシタと
を備え、
前記MIMキャパシタは、
前記孔部内に凹型下側電極層を形成するために、前記孔部の上側角部分を斜面状にするような再スパッタリング比率で成膜される第1の導電層
を有する埋め込み型メモリデバイス。 - 前記MIMキャパシタはさらに、
前記第1の導電層上に成膜されている電気絶縁層と、
前記第1の電気絶縁層上に成膜されている第2の導電層と
を有する請求項12に記載の埋め込み型メモリデバイス。 - 前記再スパッタリング比率は、約1.4から1.6の間である請求項12に記載の埋め込み型メモリデバイス。
- 前記孔部の斜面状の前記上側角部分は、少なくとも一部が前記第1の導電層を含んでいない請求項12に記載の埋め込み型メモリデバイス。
- 前記孔部の前記上側角部分は、前記第1の導電層の成膜前に実行されたスパッタリングによって形成される斜面領域を含む請求項12に記載の埋め込み型メモリデバイス。
- 平坦化MIMキャパシタを形成するために前記MIMキャパシタの上側部分を除去する前に前記第2の導電層上に成膜される伝導性材料をさらに備え、
前記平坦化MIMキャパシタは、残りの前記第2の導電層から形成される上側電極層に対して凹になっている下側電極層を有する請求項13に記載の埋め込み型メモリデバイス。 - 金属−絶縁体−金属(MIM)キャパシタを製造する方法であって、
底部を形成している下側部分および側壁を形成している上側部分によって画定される孔部を形成する段階と、
前記孔部内に凹型の下側電極層を形成するために、前記孔部の上側角部分を斜面状にするような再スパッタリング比率で第1の導電層を成膜する段階と
を備える方法。 - 前記第1の導電層上に電気絶縁層を成膜する段階と、
前記第1の電気絶縁層上に第2の導電層を成膜する段階と
をさらに備える請求項18に記載の方法。 - 前記再スパッタリング比率は、約1.4から1.6の間である請求項18に記載の方法。
- 前記孔部の斜面状の前記上側角部分は少なくとも一部が、前記第1の導電層を含んでいない請求項18に記載の方法。
- 前記孔部の前記上側角部分の斜面領域を形成するために、前記第1の導電層の成膜前にスパッタリングを実行する段階をさらに備える請求項18に記載の方法。
- 前記第2の導電層上に伝導性材料を成膜する段階と、
前記MIMキャパシタの上側部分を除去して平坦化MIMキャパシタを形成する段階と
をさらに備え、
前記平坦化MIMキャパシタは、残りの前記第2の導電層から形成される上側電極層に対して凹となっている前記下側電極層を有する請求項19に記載の方法。
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US12/646,957 US8441097B2 (en) | 2009-12-23 | 2009-12-23 | Methods to form memory devices having a capacitor with a recessed electrode |
US12/646,957 | 2009-12-23 | ||
PCT/US2010/057253 WO2011087567A1 (en) | 2009-12-23 | 2010-11-18 | Methods to form memory devices having a capacitor with a recessed electrode |
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KR (1) | KR101379564B1 (ja) |
CN (1) | CN102473709B (ja) |
HK (1) | HK1168937A1 (ja) |
TW (1) | TWI585948B (ja) |
WO (1) | WO2011087567A1 (ja) |
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- 2010-11-18 CN CN201080028743.XA patent/CN102473709B/zh not_active Expired - Fee Related
- 2010-11-18 KR KR1020117030696A patent/KR101379564B1/ko active IP Right Grant
- 2010-11-18 EP EP20100843410 patent/EP2517246A4/en not_active Ceased
- 2010-11-18 WO PCT/US2010/057253 patent/WO2011087567A1/en active Application Filing
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US10460877B2 (en) | 2016-05-27 | 2019-10-29 | Tdk Corporation | Thin-film capacitor including groove portions |
Also Published As
Publication number | Publication date |
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CN102473709A (zh) | 2012-05-23 |
KR101379564B1 (ko) | 2014-03-31 |
KR20120009511A (ko) | 2012-01-31 |
US8441097B2 (en) | 2013-05-14 |
HK1168937A1 (en) | 2013-01-11 |
EP2517246A4 (en) | 2015-04-22 |
TW201131746A (en) | 2011-09-16 |
TWI585948B (zh) | 2017-06-01 |
WO2011087567A1 (en) | 2011-07-21 |
EP2517246A1 (en) | 2012-10-31 |
JP5640210B2 (ja) | 2014-12-17 |
US20110147888A1 (en) | 2011-06-23 |
CN102473709B (zh) | 2015-06-03 |
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