HK1168937A1 - Methods to form memory devices having a capacitor with a recessed electrode - Google Patents

Methods to form memory devices having a capacitor with a recessed electrode

Info

Publication number
HK1168937A1
HK1168937A1 HK12109480.4A HK12109480A HK1168937A1 HK 1168937 A1 HK1168937 A1 HK 1168937A1 HK 12109480 A HK12109480 A HK 12109480A HK 1168937 A1 HK1168937 A1 HK 1168937A1
Authority
HK
Hong Kong
Prior art keywords
capacitor
methods
memory devices
form memory
recessed electrode
Prior art date
Application number
HK12109480.4A
Other languages
English (en)
Chinese (zh)
Inventor
．斯特格沃德
．林德特
．凱廷
．杰澤斯基
．格拉斯曼
Original Assignee
英特爾公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英特爾公司 filed Critical 英特爾公司
Publication of HK1168937A1 publication Critical patent/HK1168937A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK12109480.4A 2009-12-23 2012-09-26 Methods to form memory devices having a capacitor with a recessed electrode HK1168937A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/646,957 US8441097B2 (en) 2009-12-23 2009-12-23 Methods to form memory devices having a capacitor with a recessed electrode
PCT/US2010/057253 WO2011087567A1 (en) 2009-12-23 2010-11-18 Methods to form memory devices having a capacitor with a recessed electrode

Publications (1)

Publication Number Publication Date
HK1168937A1 true HK1168937A1 (en) 2013-01-11

Family

ID=44149887

Family Applications (1)

Application Number Title Priority Date Filing Date
HK12109480.4A HK1168937A1 (en) 2009-12-23 2012-09-26 Methods to form memory devices having a capacitor with a recessed electrode

Country Status (8)

Country Link
US (1) US8441097B2 (xx)
EP (1) EP2517246A4 (xx)
JP (1) JP5640210B2 (xx)
KR (1) KR101379564B1 (xx)
CN (1) CN102473709B (xx)
HK (1) HK1168937A1 (xx)
TW (1) TWI585948B (xx)
WO (1) WO2011087567A1 (xx)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112011105805T5 (de) 2011-11-03 2014-08-28 Intel Corporation Ätzstop-Schichten und Kondensatoren
US8691622B2 (en) 2012-05-25 2014-04-08 Micron Technology, Inc. Memory cells and methods of forming memory cells
US9263577B2 (en) 2014-04-24 2016-02-16 Micron Technology, Inc. Ferroelectric field effect transistors, pluralities of ferroelectric field effect transistors arrayed in row lines and column lines, and methods of forming a plurality of ferroelectric field effect transistors
US9472560B2 (en) 2014-06-16 2016-10-18 Micron Technology, Inc. Memory cell and an array of memory cells
US9159829B1 (en) 2014-10-07 2015-10-13 Micron Technology, Inc. Recessed transistors containing ferroelectric material
US9305929B1 (en) 2015-02-17 2016-04-05 Micron Technology, Inc. Memory cells
US10134982B2 (en) 2015-07-24 2018-11-20 Micron Technology, Inc. Array of cross point memory cells
US9853211B2 (en) 2015-07-24 2017-12-26 Micron Technology, Inc. Array of cross point memory cells individually comprising a select device and a programmable device
WO2017075162A1 (en) * 2015-10-27 2017-05-04 Applied Materials, Inc. Methods for reducing copper overhang in a feature of a substrate
US10460877B2 (en) 2016-05-27 2019-10-29 Tdk Corporation Thin-film capacitor including groove portions
US10396145B2 (en) * 2017-01-12 2019-08-27 Micron Technology, Inc. Memory cells comprising ferroelectric material and including current leakage paths having different total resistances
US10388721B2 (en) 2017-01-24 2019-08-20 International Business Machines Corporation Conformal capacitor structure formed by a single process
US10833092B2 (en) * 2019-01-23 2020-11-10 Micron Technology, Inc. Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devices
US11170834B2 (en) 2019-07-10 2021-11-09 Micron Technology, Inc. Memory cells and methods of forming a capacitor including current leakage paths having different total resistances
CN113745402B (zh) * 2020-05-29 2023-10-17 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、存储器

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002149A (en) 1990-11-19 1999-12-14 Micron Technology, Inc. Capacitor structures for memory cells
US7705383B2 (en) * 1995-09-20 2010-04-27 Micron Technology, Inc. Integrated circuitry for semiconductor memory
US5783282A (en) * 1996-10-07 1998-07-21 Micron Technology, Inc. Resputtering to achieve better step coverage of contact holes
US6346741B1 (en) * 1997-11-20 2002-02-12 Advanced Technology Materials, Inc. Compositions and structures for chemical mechanical polishing of FeRAM capacitors and method of fabricating FeRAM capacitors using same
US6165864A (en) * 1998-07-28 2000-12-26 Siemens Aktiengesellschaft Tapered electrode for stacked capacitors
US6207524B1 (en) * 1998-09-29 2001-03-27 Siemens Aktiengesellschaft Memory cell with a stacked capacitor
TW426967B (en) * 1998-10-15 2001-03-21 United Microelectronics Corp Fabrication method of node contact hole
US6096651A (en) * 1999-01-11 2000-08-01 Taiwan Semiconductor Manufacturing Company Key-hole reduction during tungsten plug formation
US6750495B1 (en) * 1999-05-12 2004-06-15 Agere Systems Inc. Damascene capacitors for integrated circuits
US6284551B1 (en) * 1999-06-14 2001-09-04 Hyundai Electronics Industries Co., Ltd. Capacitor and method for fabricating the same
US6362012B1 (en) * 2001-03-05 2002-03-26 Taiwan Semiconductor Manufacturing Company Structure of merged vertical capacitor inside spiral conductor for RF and mixed-signal applications
US6436787B1 (en) 2001-07-26 2002-08-20 Taiwan Semiconductor Manufacturing Company Method of forming crown-type MIM capacitor integrated with the CU damascene process
KR100428789B1 (ko) 2001-12-05 2004-04-28 삼성전자주식회사 금속/절연막/금속 캐퍼시터 구조를 가지는 반도체 장치 및그 형성 방법
US6670237B1 (en) 2002-08-01 2003-12-30 Chartered Semiconductor Manufacturing Ltd. Method for an advanced MIM capacitor
US6645851B1 (en) * 2002-09-17 2003-11-11 Taiwan Semiconductor Manufacturing Company Method of forming planarized coatings on contact hole patterns of various duty ratios
DE10255841A1 (de) 2002-11-29 2004-06-17 Infineon Technologies Ag Kondensator mit ruthenhaltigen Elektroden
JP2005032800A (ja) 2003-07-08 2005-02-03 Renesas Technology Corp 半導体装置の製造方法
US7282757B2 (en) 2003-10-20 2007-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitor structure and method of manufacture
US7091085B2 (en) 2003-11-14 2006-08-15 Micron Technology, Inc. Reduced cell-to-cell shorting for memory arrays
US7224959B2 (en) * 2003-12-05 2007-05-29 Nokia Corporation Mobile phone business administration tool
US7224014B2 (en) 2003-12-05 2007-05-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7300840B2 (en) 2005-04-01 2007-11-27 United Microelectronics Corp. MIM capacitor structure and fabricating method thereof
US7880268B2 (en) * 2006-05-12 2011-02-01 Stmicroelectronics S.A. MIM capacitor
US7968952B2 (en) * 2006-12-29 2011-06-28 Intel Corporation Stressed barrier plug slot contact structure for transistor performance enhancement
US7531378B2 (en) * 2007-03-14 2009-05-12 Ovonyx, Inc. Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element
FR2914498A1 (fr) 2007-04-02 2008-10-03 St Microelectronics Sa Realisation de condensateurs mim a 3 dimensions dans le dernier niveau de metal d'un circuit integre
TW200933710A (en) 2008-01-29 2009-08-01 Promos Technologies Inc Method for preparing doped polysilicon conductors and method for preparing trench capacitor structures using the same
US7927959B2 (en) 2008-09-30 2011-04-19 Intel Corporation Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby
US7981756B2 (en) 2008-12-22 2011-07-19 Intel Corporation Common plate capacitor array connections, and processes of making same
JP2011003593A (ja) * 2009-06-16 2011-01-06 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
KR101379564B1 (ko) 2014-03-31
US8441097B2 (en) 2013-05-14
TW201131746A (en) 2011-09-16
EP2517246A4 (en) 2015-04-22
JP5640210B2 (ja) 2014-12-17
JP2012530384A (ja) 2012-11-29
EP2517246A1 (en) 2012-10-31
CN102473709A (zh) 2012-05-23
TWI585948B (zh) 2017-06-01
US20110147888A1 (en) 2011-06-23
WO2011087567A1 (en) 2011-07-21
CN102473709B (zh) 2015-06-03
KR20120009511A (ko) 2012-01-31

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20191120