JP2012528488A5 - - Google Patents
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- Publication number
- JP2012528488A5 JP2012528488A5 JP2012513271A JP2012513271A JP2012528488A5 JP 2012528488 A5 JP2012528488 A5 JP 2012528488A5 JP 2012513271 A JP2012513271 A JP 2012513271A JP 2012513271 A JP2012513271 A JP 2012513271A JP 2012528488 A5 JP2012528488 A5 JP 2012528488A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- item
- diffusion barrier
- metal substrate
- insulating layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000010936 titanium Substances 0.000 claims description 12
- 150000003609 titanium compounds Chemical class 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001200 Ferrotitanium Inorganic materials 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18195309P | 2009-05-28 | 2009-05-28 | |
| US61/181,953 | 2009-05-28 | ||
| PCT/US2010/036478 WO2010138766A1 (en) | 2009-05-28 | 2010-05-27 | Semiconductor devices on diffusion barrier coated substrates and methods of making the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012528488A JP2012528488A (ja) | 2012-11-12 |
| JP2012528488A5 true JP2012528488A5 (OSRAM) | 2013-07-04 |
| JP5729707B2 JP5729707B2 (ja) | 2015-06-03 |
Family
ID=43223095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012513271A Active JP5729707B2 (ja) | 2009-05-28 | 2010-05-27 | 拡散バリアで被覆された基板上の半導体デバイス及びその形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9299845B2 (OSRAM) |
| EP (1) | EP2436037B1 (OSRAM) |
| JP (1) | JP5729707B2 (OSRAM) |
| KR (1) | KR101716655B1 (OSRAM) |
| CN (1) | CN102971849B (OSRAM) |
| CA (1) | CA2761748C (OSRAM) |
| SG (1) | SG175709A1 (OSRAM) |
| TW (1) | TWI576999B (OSRAM) |
| WO (1) | WO2010138766A1 (OSRAM) |
Families Citing this family (34)
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| KR101217820B1 (ko) * | 2011-01-05 | 2013-01-21 | 삼화콘덴서공업주식회사 | 플렉시블 적층형 박막 커패시터를 이용한 임베디드 인쇄회로기판 |
| US8877300B2 (en) * | 2011-02-16 | 2014-11-04 | Veeco Ald Inc. | Atomic layer deposition using radicals of gas mixture |
| US9163310B2 (en) | 2011-02-18 | 2015-10-20 | Veeco Ald Inc. | Enhanced deposition of layer on substrate using radicals |
| US8956944B2 (en) * | 2011-03-25 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| TWI521600B (zh) * | 2011-06-03 | 2016-02-11 | 應用材料股份有限公司 | 在矽基材上形成高生長速率低電阻率的鍺膜之方法〈一〉 |
| US9105779B2 (en) | 2011-09-26 | 2015-08-11 | International Business Machines Corporation | Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer |
| US20130106875A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Method of improving thin-film encapsulation for an electromechanical systems assembly |
| KR20130056608A (ko) * | 2011-11-22 | 2013-05-30 | 에스케이하이닉스 주식회사 | 상변화 메모리 장치 및 그의 제조방법 |
| TWI563111B (en) * | 2011-12-16 | 2016-12-21 | Applied Materials Inc | Film deposition using tantalum precursors |
| CN103861662B (zh) | 2012-12-13 | 2016-12-21 | 通用电气公司 | 带有氧化铝阻隔层的防结焦催化剂涂层 |
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| KR102098573B1 (ko) * | 2013-07-19 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시패널 및 그 제조방법 |
| KR102427696B1 (ko) * | 2015-10-22 | 2022-08-01 | 삼성디스플레이 주식회사 | 터치 패널 |
| US9926622B2 (en) * | 2015-11-12 | 2018-03-27 | Uchicago Argonne, Llc | Methods for forming pitting resistant carbon coating |
| ES3039527T3 (en) | 2016-06-30 | 2025-10-22 | Nec Corp | Method and apparatus for signal configuration in a wireless communication system |
| KR102565103B1 (ko) * | 2017-04-13 | 2023-08-08 | 니트라이드 솔루션즈 인크. | 열 전도 및 전기 절연을 위한 소자 |
| KR101827929B1 (ko) * | 2017-05-15 | 2018-02-09 | 주식회사 벤투스솔루션 | 직물형 염료감응 태양전지의 전극용 직물형 금속기판의 제조방법, 이로부터 제조된 직물형 염료감응 태양전지의 전극용 직물형 금속기판 및 이를 구비한 직물형 염료감응 태양전지 |
| US10749004B2 (en) | 2017-06-30 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having a multi-layer diffusion barrier |
| US10410928B2 (en) * | 2017-11-28 | 2019-09-10 | International Business Machines Corporation | Homogeneous densification of fill layers for controlled reveal of vertical fins |
| SG11202008268RA (en) | 2018-03-19 | 2020-10-29 | Applied Materials Inc | Methods for depositing coatings on aerospace components |
| CN117026202A (zh) * | 2018-07-18 | 2023-11-10 | 应用材料公司 | 通过原子层沉积来沉积的抗侵蚀金属氟化物涂层 |
| US20200024735A1 (en) * | 2018-07-18 | 2020-01-23 | Applied Materials, Inc. | Erosion resistant metal fluoride coatings deposited by atomic layer deposition |
| US11742363B2 (en) | 2018-10-22 | 2023-08-29 | Ensurge Micropower Asa | Barrier stacks for printed and/or thin film electronics, methods of manufacturing the same, and method of controlling a threshold voltage of a thin film transistor |
| EP3959356A4 (en) | 2019-04-26 | 2023-01-18 | Applied Materials, Inc. | METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION |
| CN110098269A (zh) * | 2019-04-29 | 2019-08-06 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池及其制备方法 |
| US11088078B2 (en) | 2019-05-22 | 2021-08-10 | Nanya Technology Corporation | Semiconductor device and method for manufacturing the same |
| US11735791B2 (en) | 2020-04-10 | 2023-08-22 | Ensurge Micropower Asa | Solid-state battery and method of making the same |
| CN116454139A (zh) * | 2022-01-07 | 2023-07-18 | 福建金石能源有限公司 | 一种可靠的低耗银太阳能电池片 |
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| WO2018049192A1 (en) | 2016-09-08 | 2018-03-15 | The Board Of Trustees Of The Leland Stanford Junior University | Steering wheel skin deformation display |
-
2010
- 2010-05-27 JP JP2012513271A patent/JP5729707B2/ja active Active
- 2010-05-27 KR KR1020117025851A patent/KR101716655B1/ko active Active
- 2010-05-27 CN CN201080023017.9A patent/CN102971849B/zh active Active
- 2010-05-27 CA CA2761748A patent/CA2761748C/en active Active
- 2010-05-27 WO PCT/US2010/036478 patent/WO2010138766A1/en not_active Ceased
- 2010-05-27 TW TW099116965A patent/TWI576999B/zh not_active IP Right Cessation
- 2010-05-27 SG SG2011073871A patent/SG175709A1/en unknown
- 2010-05-27 EP EP10781242.2A patent/EP2436037B1/en active Active
- 2010-05-28 US US12/790,627 patent/US9299845B2/en active Active
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