JP2012512496A - Dramでsram出力特性を具現する装置及び方法 - Google Patents
Dramでsram出力特性を具現する装置及び方法 Download PDFInfo
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- JP2012512496A JP2012512496A JP2011542021A JP2011542021A JP2012512496A JP 2012512496 A JP2012512496 A JP 2012512496A JP 2011542021 A JP2011542021 A JP 2011542021A JP 2011542021 A JP2011542021 A JP 2011542021A JP 2012512496 A JP2012512496 A JP 2012512496A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000008569 process Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
Abstract
【選択図】図1
Description
Claims (8)
- 並列に配列され、データバス及びアドレスバスを共有する複数のDRAMと、
前記複数のDRAMが並列に連結接続され、1つのDRAMにデータ出力状態の制御信号を伝送する場合、残りの他のDRAMにはリフレッシュ待機状態の制御信号を伝送し、出力状態の制御信号は並列に連結されたDRAMに順次伝送し、出力状態のDRAMからデータを判読して外部装置に伝送するコントローラと、を含み、
前記コントローラでは、外部装置からデータ記録に関する制御信号が伝送されると、前記並列に連結された複数のDRAMに同時にデータを記録し、前記複数のDRAMは独立的に記録/判読動作を行わなく、前記複数のDRAMのデータは常に一致することを特徴とするDRAMでSRAM出力特性を具現する装置。 - 前記DRAMとしては、SDRAM、RDRAM、SLDRAM、RLDRAMのうち1つを選択して使用する、請求項1に記載のDRAMでSRAM出力特性を具現する装置。
- 複数のDRAMをコントローラに並列に配列連結してデータバス及びアドレスバスを共有させ、
前記コントローラでは、外部装置からデータ記録に関する制御信号が伝送されると、前記並列に連結された複数のDRAMに同時にデータを記録し、前記複数のDRAMは独立的に記録/判読動作を行わなく、前記複数のDRAMのデータを常に一致させ、
外部装置からデータ判読に関する制御信号が入力されると、前記コントローラでは、1つのDRAMにはデータ出力状態の制御信号を伝送し、残りの他のDRAMにはリフレッシュ待機状態の制御信号を伝送し、
出力状態のDRAMからデータを判読して外部装置に伝送し、
出力状態であったDRAMにリフレッシュ待機状態の制御信号を伝送し、他の1つのDRAMに出力状態の制御信号を伝送し、
前記出力状態のDRAMからデータを判読する段階と出力状態をリフレッシュ待機状態に変更する制御信号を伝送する段階を順次繰り返して外部装置にデータを出力する過程を含むDRAMでSRAM出力特性を具現する方法。 - 前記コントローラに外部装置からデータ記録に関する制御信号が入力されると、前記コントローラでは、並列にDRAMに直接又はバッファメモリを用いて間接的にデータを記録する、請求項3に記載のDRAMでSRAM出力特性を具現する方法。
- 前記リフレッシュ待機状態では、該当するDRAMにリフレッシュを実行してから待機する状態を維持する、請求項3に記載のDRAMでSRAM出力特性を具現する方法。
- 前記出力状態では、データの出力が進行されたり、出力要請に直ちに応じることができる状態を維持する、請求項3に記載のDRAMでSRAM出力特性を具現する方法。
- 前記DRAMとしては、SDRAM、RDRAM、SLDRAM、RLDRAMのうち1つを選択して使用する、請求項3に記載のDRAMでSRAM出力特性を具現する装置。
- 前記コントローラが出力状態とリフレッシュ待機状態を交替するとき、出力要請が進行中の場合は、出力要請の完了後に交替する、請求項3に記載のDRAMでSRAM出力特性を具現する方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090045298A KR100940868B1 (ko) | 2009-05-25 | 2009-05-25 | 디램으로 에스램 출력특성을 구현하는 장치 및 방법 |
KR10-2009-0045298 | 2009-05-25 | ||
PCT/KR2010/003151 WO2010137819A2 (ko) | 2009-05-25 | 2010-05-19 | 디램으로 에스램 출력특성을 구현하는 장치 및 방법 |
Publications (2)
Publication Number | Publication Date |
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JP2012512496A true JP2012512496A (ja) | 2012-05-31 |
JP5943250B2 JP5943250B2 (ja) | 2016-07-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011542021A Active JP5943250B2 (ja) | 2009-05-25 | 2010-05-19 | Dramでsram出力特性を具現する装置及び方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8422314B2 (ja) |
EP (1) | EP2437267A4 (ja) |
JP (1) | JP5943250B2 (ja) |
KR (1) | KR100940868B1 (ja) |
CN (1) | CN102422359B (ja) |
WO (1) | WO2010137819A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5727948B2 (ja) * | 2012-01-16 | 2015-06-03 | 株式会社東芝 | 半導体記憶装置 |
US9916098B2 (en) | 2014-01-31 | 2018-03-13 | Hewlett Packard Enterprise Development Lp | Reducing read latency of memory modules |
KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
US11379306B1 (en) | 2021-07-29 | 2022-07-05 | Bae Systems Information And Electronic System Integration Inc. | Method for radiation hardening synchronous DRAM |
Citations (8)
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JPS5447445A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Memory unit |
JPS5715286A (en) * | 1980-06-30 | 1982-01-26 | Toshiba Corp | Memory device |
JPH05165731A (ja) * | 1991-12-13 | 1993-07-02 | Nec Corp | 二重化記憶装置 |
JPH1011348A (ja) * | 1996-06-24 | 1998-01-16 | Ricoh Co Ltd | Dramの制御装置およびそのdram |
JP2001093277A (ja) * | 1999-09-22 | 2001-04-06 | Fujitsu Ltd | 半導体集積回路およびその制御方法 |
JP2001142787A (ja) * | 1999-11-15 | 2001-05-25 | Oki Electric Ind Co Ltd | マイクロプロセッサ |
JP2003006041A (ja) * | 2001-06-20 | 2003-01-10 | Hitachi Ltd | 半導体装置 |
JP2008257742A (ja) * | 2008-05-29 | 2008-10-23 | Renesas Technology Corp | 半導体記憶装置 |
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JPH11149416A (ja) * | 1997-11-17 | 1999-06-02 | Tamura Electric Works Ltd | データ保証装置 |
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2009
- 2009-05-25 KR KR1020090045298A patent/KR100940868B1/ko active IP Right Grant
-
2010
- 2010-05-19 WO PCT/KR2010/003151 patent/WO2010137819A2/ko active Application Filing
- 2010-05-19 JP JP2011542021A patent/JP5943250B2/ja active Active
- 2010-05-19 EP EP10780730A patent/EP2437267A4/en not_active Ceased
- 2010-05-19 CN CN201080020819.4A patent/CN102422359B/zh active Active
-
2011
- 2011-05-27 US US13/118,287 patent/US8422314B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS5447445A (en) * | 1977-09-21 | 1979-04-14 | Hitachi Ltd | Memory unit |
JPS5715286A (en) * | 1980-06-30 | 1982-01-26 | Toshiba Corp | Memory device |
JPH05165731A (ja) * | 1991-12-13 | 1993-07-02 | Nec Corp | 二重化記憶装置 |
JPH1011348A (ja) * | 1996-06-24 | 1998-01-16 | Ricoh Co Ltd | Dramの制御装置およびそのdram |
JP2001093277A (ja) * | 1999-09-22 | 2001-04-06 | Fujitsu Ltd | 半導体集積回路およびその制御方法 |
JP2001142787A (ja) * | 1999-11-15 | 2001-05-25 | Oki Electric Ind Co Ltd | マイクロプロセッサ |
JP2003006041A (ja) * | 2001-06-20 | 2003-01-10 | Hitachi Ltd | 半導体装置 |
JP2008257742A (ja) * | 2008-05-29 | 2008-10-23 | Renesas Technology Corp | 半導体記憶装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2437267A2 (en) | 2012-04-04 |
WO2010137819A2 (ko) | 2010-12-02 |
EP2437267A4 (en) | 2013-01-23 |
WO2010137819A3 (ko) | 2011-03-03 |
US8422314B2 (en) | 2013-04-16 |
CN102422359B (zh) | 2014-12-24 |
CN102422359A (zh) | 2012-04-18 |
JP5943250B2 (ja) | 2016-07-05 |
KR100940868B1 (ko) | 2010-02-09 |
US20110228613A1 (en) | 2011-09-22 |
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