JP2012508469A5 - - Google Patents

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Publication number
JP2012508469A5
JP2012508469A5 JP2011535684A JP2011535684A JP2012508469A5 JP 2012508469 A5 JP2012508469 A5 JP 2012508469A5 JP 2011535684 A JP2011535684 A JP 2011535684A JP 2011535684 A JP2011535684 A JP 2011535684A JP 2012508469 A5 JP2012508469 A5 JP 2012508469A5
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JP
Japan
Prior art keywords
substrate
chamber
carrier
temperature
flow
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JP2011535684A
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English (en)
Japanese (ja)
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JP2012508469A (ja
JP5567582B2 (ja
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Priority claimed from US12/291,350 external-priority patent/US8895107B2/en
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Publication of JP2012508469A publication Critical patent/JP2012508469A/ja
Publication of JP2012508469A5 publication Critical patent/JP2012508469A5/ja
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Publication of JP5567582B2 publication Critical patent/JP5567582B2/ja
Expired - Fee Related legal-status Critical Current
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JP2011535684A 2008-11-06 2009-11-06 高温ガス注入を伴う化学気相成長方法及び反応器 Expired - Fee Related JP5567582B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/291,350 2008-11-06
US12/291,350 US8895107B2 (en) 2008-11-06 2008-11-06 Chemical vapor deposition with elevated temperature gas injection
PCT/US2009/063532 WO2010054184A2 (en) 2008-11-06 2009-11-06 Chemical vapor deposition with elevated temperature gas injection

Publications (3)

Publication Number Publication Date
JP2012508469A JP2012508469A (ja) 2012-04-05
JP2012508469A5 true JP2012508469A5 (enExample) 2012-12-13
JP5567582B2 JP5567582B2 (ja) 2014-08-06

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Family Applications (1)

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JP2011535684A Expired - Fee Related JP5567582B2 (ja) 2008-11-06 2009-11-06 高温ガス注入を伴う化学気相成長方法及び反応器

Country Status (7)

Country Link
US (4) US8895107B2 (enExample)
EP (1) EP2356671A4 (enExample)
JP (1) JP5567582B2 (enExample)
KR (1) KR20110084285A (enExample)
CN (1) CN102272892B (enExample)
TW (1) TWI477645B (enExample)
WO (1) WO2010054184A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102174693B (zh) * 2007-01-12 2014-10-29 威科仪器有限公司 气体处理系统
JP2011500961A (ja) 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
JP5083193B2 (ja) * 2008-12-12 2012-11-28 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US8367562B2 (en) * 2009-03-16 2013-02-05 Globalfoundries Inc. Method for uniform nanoscale film deposition
KR20130007594A (ko) * 2010-03-03 2013-01-18 비코 인스트루먼츠 인코포레이티드 경사진 에지를 가진 웨이퍼 캐리어
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
US20150167162A1 (en) 2012-07-13 2015-06-18 Gallium Enterprises Pty Ltd Apparatus and method for film formation
US20140120735A1 (en) * 2012-10-31 2014-05-01 Macronix International Co., Ltd. Semiconductor process gas flow control apparatus
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System
US20150345046A1 (en) * 2012-12-27 2015-12-03 Showa Denko K.K. Film-forming device
US20160194753A1 (en) * 2012-12-27 2016-07-07 Showa Denko K.K. SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM
KR102350588B1 (ko) * 2015-07-07 2022-01-14 삼성전자 주식회사 인젝터를 갖는 박막 형성 장치
US9748113B2 (en) 2015-07-30 2017-08-29 Veeco Intruments Inc. Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system
WO2017031106A1 (en) * 2015-08-18 2017-02-23 Veeco Instruments Inc. Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes
CA2974387A1 (en) * 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
JP7495882B2 (ja) 2018-04-13 2024-06-05 ビーコ・インストゥルメンツ・インコーポレイテッド マルチゾーンインジェクターブロックを備える化学蒸着装置
IT201800021040A1 (it) * 2018-12-24 2020-06-24 Danilo Vuono Supporto solido, sistema, e procedimenti
JP7738414B2 (ja) * 2021-06-21 2025-09-12 パナソニックホールディングス株式会社 Ｉｉｉ族化合物半導体結晶の製造装置
JP7805065B2 (ja) * 2021-08-25 2026-01-23 アプライド マテリアルズ インコーポレイテッド リアクタインターフェースに嵌合された弾性物体を使用したプロセスガスの格納
CN115505903B (zh) * 2022-09-30 2024-01-30 楚赟精工科技(上海)有限公司 气体注入机构及其制作方法、气相反应装置
CN116288279B (zh) * 2023-05-23 2023-08-18 中微半导体设备(上海)股份有限公司 一种气相沉积装置及基片处理方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0377384A (ja) 1989-08-19 1991-04-02 Semiconductor Energy Lab Co Ltd 窒化ホウ素を用いた電子装置
JP2556211B2 (ja) 1991-03-13 1996-11-20 日亜化学工業株式会社 半導体結晶層の成長装置とその成長方法
US5320680A (en) * 1991-04-25 1994-06-14 Silicon Valley Group, Inc. Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow
US5336324A (en) * 1991-12-04 1994-08-09 Emcore Corporation Apparatus for depositing a coating on a substrate
JP2773849B2 (ja) * 1992-02-12 1998-07-09 シャープ株式会社 気相の成長方法及び光励起気相成長装置
US5370739A (en) * 1992-06-15 1994-12-06 Materials Research Corporation Rotating susceptor semiconductor wafer processing cluster tool module useful for tungsten CVD
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5950925A (en) * 1996-10-11 1999-09-14 Ebara Corporation Reactant gas ejector head
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6232196B1 (en) * 1998-03-06 2001-05-15 Asm America, Inc. Method of depositing silicon with high step coverage
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
US6289842B1 (en) * 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
US6066196A (en) * 1998-09-18 2000-05-23 Gelest, Inc. Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
DE19855637A1 (de) * 1998-12-02 2000-06-15 Aixtron Ag Verfahren und System zur Halbleiterkristallherstellung mit Temperaturverwaltung
JP3782938B2 (ja) * 1999-04-20 2006-06-07 東京エレクトロン株式会社 ＩＣ製造におけるＰＥＣＶＤ−ＴｉフィルムとＣＶＤ−ＴｉＮフィルムの単一室処理方法
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6451692B1 (en) * 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
DE10133914A1 (de) * 2001-07-12 2003-01-23 Aixtron Ag Prozesskammer mit abschnittsweise unterschiedlich drehangetriebenem Boden und Schichtabscheideverfahren in einer derartigen Prozesskammer
JP2004031874A (ja) 2002-06-28 2004-01-29 Toshiba Ceramics Co Ltd 半導体のエピタキシャル成長装置
JP3803788B2 (ja) * 2002-04-09 2006-08-02 農工大ティー・エル・オー株式会社 Ａｌ系ＩＩＩ−Ｖ族化合物半導体の気相成長方法、Ａｌ系ＩＩＩ−Ｖ族化合物半導体の製造方法ならびに製造装置
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP4714021B2 (ja) * 2003-08-20 2011-06-29 ビーコ・インストゥルメンツ・インコーポレイテッド 基板の表面に均一なエピタキシャル層を成長させる方法および回転ディスク式反応器
JP2005226257A (ja) 2004-02-10 2005-08-25 Panahome Corp 通気構造
CN102154628B (zh) * 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
JP4603370B2 (ja) * 2005-01-18 2010-12-22 創世理工株式会社 基板上に作製された半導体光デバイスおよびその作製方法
US7674352B2 (en) * 2006-11-28 2010-03-09 Applied Materials, Inc. System and method for depositing a gaseous mixture onto a substrate surface using a showerhead apparatus
CN102174693B (zh) * 2007-01-12 2014-10-29 威科仪器有限公司 气体处理系统
US20080173239A1 (en) * 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US7901508B2 (en) * 2007-01-24 2011-03-08 Widetronix, Inc. Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
JP2011500961A (ja) * 2007-10-11 2011-01-06 バレンス プロセス イクウィップメント，インコーポレイテッド 化学気相成長反応器
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead
US20100006023A1 (en) * 2008-07-11 2010-01-14 Palo Alto Research Center Incorporated Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
TWI514140B (zh) * 2013-02-05 2015-12-21 Via Tech Inc 非揮發性記憶裝置及其操作方法

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