Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
  • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45502—Flow conditions in reaction chamber
  • C23C16/45504—Laminar flow
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/4557—Heated nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45574—Nozzles for more than one gas
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45578—Elongated nozzles, tubes with holes
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45587—Mechanical means for changing the gas flow
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
  • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Definitions

• the present invention relates generally to chemical vapor deposition methods and apparatus.
• Chemical vapor deposition involves directing one or more gases containing chemical species onto a surface of a substrate so that the reactive species react and form a deposit on the surface.
• compound semiconductors can be formed by epitaxial growth of a semiconductor material on a substrate.
• the substrate typically is a crystalline material in the form of a disc, commonly referred to as a "wafer.”
• Compound semiconductors such as III-V semiconductors commonly are formed by growing layers of the compound semiconductor on a wafer using a source of a Group III metal and a source of a group V element.
• the Group III metal is provided as a volatile halide of the metal, most commonly a chlorides such as GaCl 2 whereas the Group V element is provided as a hydride of the Group V element.
• the chemical species include one or more metal organic compounds such as alkyls of the Group III metals gallium, indium, and aluminum, and also include a source of a Group V element such as one or more of the hydrides of one or more of the Group V elements, such as NH 3 , AsH 3 , PH 3 and hydrides of antimony.
• bismuth may be used in place of some or all of the other Group III metals.
• the wafer is maintained at an elevated temperature within a reaction chamber.
• the reactive gases typically in admixture with inert carrier gases, are directed into the reaction chamber.
• the gases are at a relatively low temperature, as for example, about 50-60°C or below, when they are introduced into the reaction chamber. As the gases reach the hot wafer, their temperature, and hence their available energy for reaction, increases.
• One form of apparatus which has been widely employed in chemical vapor deposition includes a disc-like wafer carrier mounted within the reaction chamber for rotation about a vertical axis.
• the wafers are held in the carrier so that surfaces of the wafers face upwardly within the chamber.
• the carrier While the carrier is rotated about the axis, the reaction gases are introduced into the chamber from a flow inlet element above the carrier.
• the flowing gases pass downwardly toward the carrier and wafers, desirably in a laminar plug flow.
• viscous drag impels them into rotation around the axis, so that in a boundary region near the surface of the carrier, the gases flow around the axis and outwardly toward the periphery of the carrier.
• a multiple quantum well (“MQW”) structure can be formed by depositing layers of III-V semiconductor with different proportions of Ga and In. Each layer may be on the order of tens of Angstroms thick, i.e., a few atomic layers.
• Apparatus of this type can provide a stable and orderly flow of reactive gases over the surface of the carrier and over the surface of the wafer, so that all of the wafers on the carrier, and all regions of each wafer, are exposed to substantially uniform conditions. This, in turn promotes uniform deposition of materials on the wafers. Such uniformity is important because even minor differences in the composition and thickness of the layers of material deposited on a wafer can influence the properties of the resulting devices .
• the wafer temperature normally is set to optimize the desired deposition reaction; it is commonly above 400 0 C and most typically about 700°-1100°C. It is generally desirable to operate equipment of this type at the highest chamber pressure, lowest rotation speed and lowest gas flow rate which can provide acceptable conditions. Pressures on the order of 10 to 1000 Torr, and most commonly about 100 to about 750 Torr, are commonly used. Lower flow rates are desirable to minimize waste of the expensive, high-purity reactants and also minimize the need for waste gas treatment. Lower rotation speeds minimize effects such as centrifugal forces and vibration on the wafers. Moreover, there is normally a direct relationship between rotation speed and flow rate; under given pressure and wafer temperature conditions, the flow rate required to maintain stable, orderly flow and uniform reaction conditions increases with rotation rate.
• a method according to this aspect of the invention desirably includes the step of supporting one or more substrates on a carrier within a reaction chamber so that surfaces of the substrates face upwardly within the chamber, while rotating the carrier about a vertical axis and maintaining the substrates at a substrate temperature of 400 0 C or higher, typically 500 0 C or higher.
• the method desirably also includes the step of directing gases, most preferably gases which include a Group III metal source and a Group V compound, into the chamber from an inlet element disposed above the substrates.
• the gases flow downward toward the substrates and outwardly away from the axis over the surfaces of the substrates and react to form a deposit such as a III-V semiconductor on the substrates.
• the gases most preferably are at an inlet temperature above about 75 0 C, as, for example, about 75 0 C to about 35O 0 C, and more preferably above about 100 0 C such as about 100 0 C to about 25O 0 C when introduced into the chamber.
• the walls of the chamber are maintained at a temperature within about 5O 0 C of the inlet temperature .
• a further aspect of the present invention provides a chemical vapor deposition reactor.
• the reactor according to this aspect of the invention desirably is a rotating-disc reactor, and desirably includes a flow inlet temperature control mechanism arranged to maintain the flow inlet element of the reactor at an inlet temperature as discussed above in connection with the method.
• the reactor also includes a chamber temperature control mechanism arranged to maintain the walls of the chamber at a wall temperature as discussed above.
• Still further aspects of the invention provide chemical vapor deposition apparatus and processes which employ a gas inlet temperature less than the substrate temperature, and a temperature difference ⁇ T of at least about 200 0 C between these temperatures.
• Such apparatus and processes are referred to in this disclosure as "cold wall” apparatus and processes.
• ⁇ T in cold wall apparatus and processes is more than 200 0 C, as, for example, about 400 0 C or more or about 500 0 C or more.
• the gas inlet temperature is above about 75 0 C, and desirably above about 100 0 C.
• the walls of the reactor are maintained at a wall temperature which is also above about 75 0 C and desirably above about 100 0 C.
• the cold wall apparatus and processes are commonly used in chemical vapor deposition systems in which one or more of the reactive gasses includes an organic or metalorganic compound.
• FIG. 1 is a diagrammatic view of a reactor according to one embodiment of the invention.
• FIG. 2 is a diagrammatic sectional view depicting a component of the reactor shown in FIG. 1.
• FIG. 3 is a schematic view of another component of the reactor shown in FIG. 1.
• FIGS. 4 and 5 are graphs depicting certain operating conditions .
• Apparatus according to one embodiment of the invention includes a reaction chamber 10 having a central axis 12.
• axis 12 is substantially vertical as seen in the normal gravitational frame of reference.
• the interior walls of chamber 10 are generally in the form of surfaces of revolution about axis 12.
• the interior wall 16 is substantially in the form of a cylinder having diameter d FR concentric with the axis.
• a region 18, referred to herein as the "carrier region,” has a cylindrical interior wall 20 which is also generally in the form of a cylinder concentric with axis 12 and having diameter d CR larger than d FR .
• the chamber has a downwardly-facing transition surface 22 at the juncture of the flow region and carrier region.
• the chamber also has an exit region 24 disposed below the carrier region.
• the chamber walls have passageways schematically indicated at 26 for passage of a temperature control fluid within the walls as discussed below.
• the walls of the chamber are depicted as unitary elements in FIG. 1, in actual practice the walls may be formed from multiple elements.
• the walls may include movable sections such as sections defining doors for transferring wafers into and out of the chamber.
• part or all of the interior wall in the carrier region may be defined by a ring-like shutter which is movable in the axial directions, as shown in U.S. Patent No.
• the apparatus has a wafer carrier drive mechanism, which includes a spindle 28 extending into chamber 10.
• the spindle is coaxial with axis 12 and rotatable about the axis.
• the wafer carrier drive mechanism also includes a rotary drive mechanism 30 such as an electric motor connected to the spindle.
• the apparatus also includes conventional elements such as bearings and vacuum-tight rotary seals (not shown) .
• a wafer carrier 30 is mounted on the spindle.
• the diameter d c of carrier 32 is less than the diameter d C R of the carrier region 18, so that the periphery of the carrier and the inner wall 20 of the carrier region define a ring-like gap 41 surrounding the carrier and communicating with the exit region 24 of the chamber.
• d CR may be about 15.5 inches (39.4 cm) .
• the interior diameter d FR is approximately equal to the diameter d c of the wafer carrier or slightly larger than d c .
• the wafer carrier is detachably mounted on the spindle, so that the apparatus can be reloaded by removing the wafer carrier from the spindle and replacing it with another carrier bearing new wafers .
• a heater 42 as for example, a resistance heating element, is disposed within the reaction chamber for heating the substrate 32 carrier.
• An exhaust system 44 is connected to the exit region 24 of the chamber. The exhaust system is arranged to draw gasses from the interior of the chamber.
• the exhaust system desirably includes a controllable element such as a variable-speed pump or throttling valves 45 which can be adjusted to maintain a desired pressure within the chamber.
• a flow inlet element 46 is mounted to the flow region 14 of the chamber and forms the top wall of the chamber. The flow inlet element is disposed above the carrier region 18 and above the wafer carrier 32. The flow inlet element is connected to sources 55 and 56 of the gases used in the process.
• the flow inlet element directs streams of the various gases into the reaction chamber and downwardly toward the wafer carrier and substrates.
• the gas streams form a substantially laminar plug flow within flow region 14 of the chamber.
• the flow inlet element is arranged to discharge the gases over the entire cross-sectional area of the flow region.
• the cross-sectional area of the plug-like laminar flow desirably has a diameter close to the interior diameter dF of the flow region.
• the diameter of the flow as seen in such cross-section desirably is approximately equal to or slightly greater than the diameter d c of carrier 32.
• the flow inlet element has openings distributed over its downwardly-facing bottom surface 48, these openings being connected to the gas sources.
• the flow inlet element may be arranged as shown in FIG. 2, with first inlets disposed in arrays distributed over regions such as quadrants 50 of the flow inlet bottom surface 48 and with second inlets distributed in radially-extending rows 52.
• the first inlets typically are connected to a source 54 (FIG. 1) of a Group V element such as a hydride, whereas the second inlets typically are connected to a source 56 (FIG. 1) of a Group III metal such as a metalorganic .
• the flow inlet element also may have additional openings in its bottom surface for discharge of a carrier gas without active reagents, supplied by a separate source 55.
• the carrier gas may be discharged between streams of Group V and Group III elements so as to suppress mixing of these streams and undesired reactions in the vicinity of the flow inlet element. Also, as disclosed for example in U.S. Published Patent Application No.
• Flow inlet element 46 has temperature control fluid passages indicated schematically at 58 for passage of a temperature control fluid.
• the temperature control fluid passages 58 of the flow inlet element 46 are connected to a flow inlet temperature control mechanism 60.
• a control mechanism is depicted in FIG. 3.
• This control mechanism includes a pump 62 for circulating a fluid, most preferably a liquid such as water, ethylene glycol, a hydrocarbon oil or a synthetic organic heat transfer liquid such as those sold under the registered trademark DOWTHERM, through the temperature control fluid passages 58 of the fluid inlet element.
• the control mechanism also includes one or more sensors 64 for monitoring at least one temperature of the flow inlet element, the gases discharged from the flow inlet element, or the circulating fluid.
• the control mechanism desirably also includes a structure such as a radiator 65 arranged to dissipate heat from the circulating fluid into the environment, and also may include a heater such as an electrical resistance heater 66 or other element arranged to supply additional heat to the circulating fluid.
• the temperature control mechanism desirably further includes a control circuit 68 connected to the one or more sensors 64 and arranged to control operation of the heat-abstracting and heat-applying elements.
• the control circuit can vary the amount of heat abstracted from the fluid by controlling a bypass valve 70 to divert part or all of the circulating fluid away from the radiator, and can vary the amount of heat supplied to the fluid by controlling the operation of an electrical power supply 72 connected to the resistance heater.
• the flow inlet element can be provided with fins which dissipate heat directly into the atmosphere and with electrical heaters embedded in its structure.
• the temperature of the flow inlet element can be controlled by varying air flow over the fins, by controlling operation of the resistance heaters, or both. It is also possible to control the temperature of the flow inlet element and of the gases discharged from the flow inlet element by cooling or heating the gasses passing into the flow inlet element. Also, during operation, heat is transferred to the flow inlet element from the wafer carrier and wafers. Therefore, it is not essential for the flow inlet temperature control apparatus 60 to include a heat-supplying device such as resistance heater 66.
• the inlet temperature control apparatus 60 may be arranged to control the temperature of different zones of the flow inlet element separately.
• the temperature control fluid passages 58 may include separate flow loops for different zone of the flow inlet element, and the temperature control apparatus may include separate subsystems associated with each such loop.
• the flow inlet element 48 desirably is formed from metals or other materials having substantial thermal conductivity, and the gas passages (not shown) within the flow inlet element desirably are in intimate contact with the flowing fluid in passages 58, so that the temperature of the gases discharged from the flow inlet element and the temperature of the flow inlet element itself are close to the temperature of the heat transfer fluid.
• the flow inlet temperature control apparatus 60 is arranged to maintain the flow inlet element and the gases passing from the flow inlet element into the reaction chamber at an inlet temperature above about 75 0 C, about 75 0 C to about 35O 0 C, more desirably above about 100 0 C, such as, commonly about 100 0 C to about 25O 0 C, and most typically 100 0 C to 25O 0 C.
• the apparatus also includes a wall temperature control apparatus 74 (FIG. 3) .
• the wall temperature control apparatus may be connected to the temperature control fluid passages 26 in the walls of chamber 10, and may include elements similar to those of the inlet temperature control apparatus 60.
• the wall temperature control apparatus desirably is arranged to maintain the chamber walls in flow region 14, and desirably in the carrier region 18 as well, at a wall temperature within the ranges discussed above for the inlet temperature.
• the wall temperature is close to the inlet temperature as, for example, within about 5O 0 C, and more preferably within about 25 0 C, of the inlet temperature.
• the wall temperature control apparatus 74 may include multiple elements for separately controlling the temperature of individual zones of the chamber wall.
• the gas sources 54-56 are actuated to supply a flow of gases including the Group III and Group V elements, and typically also including a carrier gas, as a laminar, downward plug flow towards the wafer carrier 32 and wafers 38.
• the gas flow rate typically is about 25 to about 250 standard ml per minute per cm 2 of area cross-sectional area of the plug flow, as seen in a horizontal plane perpendicular to axis 12.
• the gas flow rate computed on the basis of the carrier and wafer area typically is about the same, i.e., about 25 to about 250 standard ml per minute per cm 2 of area.
• the flow rate is commonly about 50-300 standard liters per minute, i.e., about 60-400 standard ml/min per cm 2 of exposed surface area of the wafer carrier and wafer carrier.
• a "standard" liter or ml refers to a volume of gas at 25 0 C (298 0 K) and 1 atm absolute pressure.
• the exhaust system 44 is controlled so as to maintain a desired pressure within the reaction chamber as, for example, above about 10 Torr, more preferably above about 100 Torr, and typically about 250 Torr to about 1000 Torr, most commonly about 250 Torr to about 750 Torr.
• the rotary drive 30 is actuated to turn the spindle 28 and hence wafer carrier 32 around the axis 12 at a desired rotation rate, typically above about 25 revolutions per minute, and more typically about 100 to about 1500 revolutions per minute.
• Heater 42 is actuated to maintain the wafer carrier and substrates at a desired substrate temperature, typically above about 400 0 C, more commonly about 700 0 C-IlOO 0 C.
• the substrate temperature normally is selected to optimize the kinetics of the deposition reaction.
• the surface of the wafer carrier and the surfaces of the wafers are moving rapidly.
• the rapid motion of the wafer carrier and wafers entrains the gases into rotational motion around axis 12, and radial flow away from axis 12, and causes the gases in the various streams to flow outwardly across the top surface 34 of the wafer carrier and across the exposed surfaces 40 of the wafers within a boundary layer schematically indicated at 76 in FIG. 1.
• a boundary layer schematically indicated at 76 in FIG. 1.
• the boundary layer can be regarded as the region in which the gases flow substantially parallel to the surfaces of the wafers.
• the thickness T of the boundary layer is about 1 cm or so.
• the vertical distance from the downstream face of flow inlet element to the surfaces 40 of the wafers commonly is about 5-8 cm.
• the vortex tends to increase with the rotational speed of the wafer carrier. If the rotational speed of the carrier is too low, however, recirculation occurs near the central axis 12. This recirculation is caused by convection; gases heated by the hot wafer carrier and wafers become less dense and tend to rise. Recirculation of this nature also will disrupt the smooth flow of gases over the wafer surfaces. Both of these problems tend to become more severe with increasing pressure within the reactor.
• the desired operating condition referred to herein as "non-recirculating" operation, occurs when the vortex near interior wall 20 does not extend over the wafer carrier, and when recirculation near the central axis 12 does not occur.
• FIG. 4 represents results derived by computational flow dynamics for a particular reactor operating at a gas flow rate, gas composition, substrate temperature and gas inlet temperature, shown on a graph of pressure and rotation rate.
• Pressure and rotation rate below the solid-line curve in FIG. 4 represent non-recirculating operation, whereas pressure and rotation rate above the solid-line curve represent undesirable conditions.
• the minimum rotation rate which can be used at a given pressure is governed by convective recirculation. For example, at a pressure of 300 Torr, (solid horizontal line) minimum usable rotation rate is about 260 rpm; below that rate, there is recirculation near the axis due to convection.
• the maximum rotation rate which can be used at a given pressure is limited by the vortex at the edge of the wafer carrier. At 300 Torr, the maximum rotation rate is about 700 rpm. At higher pressures, the minimum rate increases and the maximum rate decreases, so that at pressure of about 480 Torr, the minimum and maximum rates are equal. This means that there is no rotation rate where this system, with the given gas flow rate, gas composition, substrate temperature and gas inlet temperature can operate in a non-recirculating regime at a pressure of about 480 Torr or above.
• Rotational Reynolds number Re ⁇ defined by Formula 2 below provides a measure of the significance of forced convection due to the rotation of the wafer carrier.
• Pmix, ⁇ mix, Vmix represent density, viscosity and velocity of the gas mixture, respectively.
• ffl is the angular velocity of the wafer carrier.
• d is the diameter of the wafer carrier.
• H is the vertical distance between the flow inlet element and the wafer carrier top surface.
• t s is the substrate temperature.
• t w is the reactor wall temperature, which is assumed to be equal to the inlet temperature t,.
• Criteria for non-recirculating operation are defined by critical values of certain dimensionless ratios of Re, Re ⁇ and Gr, as indicated in Formula 4, below. These ratios represent the ratio of the relative strengths of different forces in the reactor.
• FIG. 5 The effect of gas inlet temperature is shown in FIG. 5.
• Each curve in FIG. 5 is similar to the solid-line curve of FIG. 4.
• gas flow rate, gas composition, and substrate temperature are fixed, and the different solid lines represent results computed for different gas inlet temperatures.
• the gas inlet temperature ti and wall temperature tw are equal to one another. Raising the inlet temperature broadens the operating range in which non- recirculating conditions prevail. This effect is particularly pronounced at ti of above about 75 0 C, and particularly about 100 0 C or higher.
• the curves for ti of 100 0 C and 200 0 C show non-recirculating operation at substantially higher pressures than the curves for ti of 25 0 C and 5O 0 C.
• the minimum rotational speed is substantially reduced at ti of 100 0 C or 200 0 C.
• a minimum rotational speed of almost 400 rpm is required to maintain non-recirculating operation at ti of 25 0 C, whereas the minimum rotational speed to maintain non-recirculating operation is only about 120 rpm for ti of 200 0 C.
• the operating pressure can be increased, the rotational speed decreased, or both.
• minimum flow rate for stable operation is directly related to rotational speed.
• t ⁇ increases and rotational speed decreases, the required flow rate of gases through the reactor decreases substantially.
• ⁇ T in cold wall apparatus and processes is more than 200 0 C, as, for example, about 400 0 C or more or about 500 0 C or more.
• cold wall apparatus and processes are commonly used in chemical vapor deposition systems in which one or more of the reactive gasses includes an organic or metalorganic compound.
• Certain cold wall deposition apparatus includes a rotating carrier.
• cold wall systems of this type can be used to form silicon carbide from reactive gases including silane and a lower alkyl such as propane.
• Other examples include chemical vapor deposition of diamond, diamond-like carbon, nitrides other than the Group III nitride semiconductors discussed above, and other carbides. The invention can be applied to these systems as well.

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