JP2012507870A5 - - Google Patents
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- Publication number
- JP2012507870A5 JP2012507870A5 JP2011534755A JP2011534755A JP2012507870A5 JP 2012507870 A5 JP2012507870 A5 JP 2012507870A5 JP 2011534755 A JP2011534755 A JP 2011534755A JP 2011534755 A JP2011534755 A JP 2011534755A JP 2012507870 A5 JP2012507870 A5 JP 2012507870A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- density
- donor semiconductor
- flakes
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 101
- 238000000926 separation method Methods 0.000 claims description 63
- 238000010899 nucleation Methods 0.000 claims description 49
- 238000005468 ion implantation Methods 0.000 claims description 48
- 230000003313 weakening Effects 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 33
- 238000002513 implantation Methods 0.000 claims description 31
- 239000012212 insulator Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 110
- 150000002500 ions Chemical class 0.000 description 39
- 241000894007 species Species 0.000 description 33
- 239000001257 hydrogen Substances 0.000 description 26
- 229910052739 hydrogen Inorganic materials 0.000 description 26
- 229910052710 silicon Inorganic materials 0.000 description 21
- 238000009826 distribution Methods 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000007924 injection Substances 0.000 description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 16
- 238000002347 injection Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 238000010884 ion-beam technique Methods 0.000 description 15
- -1 oxygen ions Chemical class 0.000 description 12
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 125000004429 atoms Chemical group 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- YZCKVEUIGOORGS-UHFFFAOYSA-N hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 5
- 210000001772 Blood Platelets Anatomy 0.000 description 4
- 230000005465 channeling Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000004299 exfoliation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000002241 glass-ceramic Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000875 corresponding Effects 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000000873 masking Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006011 modification reaction Methods 0.000 description 2
- 230000000051 modifying Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 206010022114 Injury Diseases 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 210000004027 cells Anatomy 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000000977 initiatory Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003902 lesions Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001902 propagating Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/290,362 US7816225B2 (en) | 2008-10-30 | 2008-10-30 | Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation |
| US12/290,384 | 2008-10-30 | ||
| US12/290,384 US8003491B2 (en) | 2008-10-30 | 2008-10-30 | Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation |
| US12/290,362 | 2008-10-30 | ||
| PCT/US2009/062531 WO2010059367A2 (fr) | 2008-10-30 | 2009-10-29 | Procédés et appareils de production de semi-conducteurs sur des structures isolantes au moyen d’une exfoliation dirigée |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012507870A JP2012507870A (ja) | 2012-03-29 |
| JP2012507870A5 true JP2012507870A5 (fr) | 2012-12-20 |
| JP5650653B2 JP5650653B2 (ja) | 2015-01-07 |
Family
ID=41559616
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011534755A Expired - Fee Related JP5650653B2 (ja) | 2008-10-30 | 2009-10-29 | 有向性の剥離を利用する、半導体・オン・インシュレータ構造を生産するための方法および装置 |
| JP2011534746A Expired - Fee Related JP5650652B2 (ja) | 2008-10-30 | 2009-10-29 | 有向表面剥離を用いる絶縁体上半導体構造作成方法及び装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011534746A Expired - Fee Related JP5650652B2 (ja) | 2008-10-30 | 2009-10-29 | 有向表面剥離を用いる絶縁体上半導体構造作成方法及び装置 |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP2359400A2 (fr) |
| JP (2) | JP5650653B2 (fr) |
| KR (2) | KR20110081318A (fr) |
| CN (2) | CN102203933B (fr) |
| TW (2) | TWI430338B (fr) |
| WO (2) | WO2010059367A2 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5703853B2 (ja) * | 2011-03-04 | 2015-04-22 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
| FR3055063B1 (fr) * | 2016-08-11 | 2018-08-31 | Soitec | Procede de transfert d'une couche utile |
| CN111834205B (zh) * | 2020-07-07 | 2021-12-28 | 中国科学院上海微系统与信息技术研究所 | 一种异质半导体薄膜及其制备方法 |
| CN114975765A (zh) * | 2022-07-19 | 2022-08-30 | 济南晶正电子科技有限公司 | 复合单晶压电薄膜及其制备方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2714524B1 (fr) * | 1993-12-23 | 1996-01-26 | Commissariat Energie Atomique | Procede de realisation d'une structure en relief sur un support en materiau semiconducteur |
| US6245161B1 (en) * | 1997-05-12 | 2001-06-12 | Silicon Genesis Corporation | Economical silicon-on-silicon hybrid wafer assembly |
| JP3031904B2 (ja) * | 1998-02-18 | 2000-04-10 | キヤノン株式会社 | 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法 |
| TW437078B (en) | 1998-02-18 | 2001-05-28 | Canon Kk | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof |
| US20010007790A1 (en) * | 1998-06-23 | 2001-07-12 | Henley Francois J. | Pre-semiconductor process implant and post-process film separation |
| US6054370A (en) * | 1998-06-30 | 2000-04-25 | Intel Corporation | Method of delaminating a pre-fabricated transistor layer from a substrate for placement on another wafer |
| FR2811807B1 (fr) * | 2000-07-12 | 2003-07-04 | Commissariat Energie Atomique | Procede de decoupage d'un bloc de materiau et de formation d'un film mince |
| JP2002124652A (ja) * | 2000-10-16 | 2002-04-26 | Seiko Epson Corp | 半導体基板の製造方法、半導体基板、電気光学装置並びに電子機器 |
| FR2830983B1 (fr) * | 2001-10-11 | 2004-05-14 | Commissariat Energie Atomique | Procede de fabrication de couches minces contenant des microcomposants |
| FR2847077B1 (fr) * | 2002-11-12 | 2006-02-17 | Soitec Silicon On Insulator | Composants semi-conducteurs, et notamment de type soi mixtes, et procede de realisation |
| EP1429381B1 (fr) * | 2002-12-10 | 2011-07-06 | S.O.I.Tec Silicon on Insulator Technologies | Procédé de fabrication d'un matériau composé |
| US7176528B2 (en) | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| DE10318283A1 (de) * | 2003-04-22 | 2004-11-25 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur |
| US7148124B1 (en) * | 2004-11-18 | 2006-12-12 | Alexander Yuri Usenko | Method for forming a fragile layer inside of a single crystalline substrate preferably for making silicon-on-insulator wafers |
| JP2006324051A (ja) * | 2005-05-17 | 2006-11-30 | Nissin Ion Equipment Co Ltd | 荷電粒子ビーム照射方法および装置 |
| JP4977999B2 (ja) * | 2005-11-21 | 2012-07-18 | 株式会社Ｓｕｍｃｏ | 貼合せ基板の製造方法及びその方法で製造された貼合せ基板 |
| US7691730B2 (en) * | 2005-11-22 | 2010-04-06 | Corning Incorporated | Large area semiconductor on glass insulator |
-
2009
- 2009-10-28 TW TW098136605A patent/TWI430338B/zh not_active IP Right Cessation
- 2009-10-28 TW TW098136607A patent/TWI451534B/zh not_active IP Right Cessation
- 2009-10-29 WO PCT/US2009/062531 patent/WO2010059367A2/fr active Application Filing
- 2009-10-29 JP JP2011534755A patent/JP5650653B2/ja not_active Expired - Fee Related
- 2009-10-29 KR KR1020117012220A patent/KR20110081318A/ko active IP Right Grant
- 2009-10-29 KR KR1020117012221A patent/KR101568898B1/ko not_active IP Right Cessation
- 2009-10-29 WO PCT/US2009/062504 patent/WO2010059361A2/fr active Application Filing
- 2009-10-29 JP JP2011534746A patent/JP5650652B2/ja not_active Expired - Fee Related
- 2009-10-29 CN CN200980143709.4A patent/CN102203933B/zh not_active Expired - Fee Related
- 2009-10-29 EP EP09744304A patent/EP2359400A2/fr not_active Withdrawn
- 2009-10-29 CN CN200980143710.7A patent/CN102203934B/zh not_active Expired - Fee Related
- 2009-10-29 EP EP09744303A patent/EP2356676A2/fr not_active Withdrawn
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