JP2012505547A5 - - Google Patents
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- Publication number
- JP2012505547A5 JP2012505547A5 JP2011531097A JP2011531097A JP2012505547A5 JP 2012505547 A5 JP2012505547 A5 JP 2012505547A5 JP 2011531097 A JP2011531097 A JP 2011531097A JP 2011531097 A JP2011531097 A JP 2011531097A JP 2012505547 A5 JP2012505547 A5 JP 2012505547A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor material
- recess
- semiconductor
- region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 57
- 239000000463 material Substances 0.000 claims 38
- 238000000034 method Methods 0.000 claims 12
- 239000000945 filler Substances 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 8
- 229910021332 silicide Inorganic materials 0.000 claims 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/249,570 US7994014B2 (en) | 2008-10-10 | 2008-10-10 | Semiconductor devices having faceted silicide contacts, and related fabrication methods |
| US12/249,570 | 2008-10-10 | ||
| PCT/US2009/059560 WO2010051133A2 (en) | 2008-10-10 | 2009-10-05 | Semiconductor devices having faceted silicide contacts, and related fabrication methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012505547A JP2012505547A (ja) | 2012-03-01 |
| JP2012505547A5 true JP2012505547A5 (https=) | 2012-11-22 |
| JP5785496B2 JP5785496B2 (ja) | 2015-09-30 |
Family
ID=42062020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011531097A Expired - Fee Related JP5785496B2 (ja) | 2008-10-10 | 2009-10-05 | ファセットされたシリサイドコンタクトを有する半導体デバイス及び関連する製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7994014B2 (https=) |
| EP (1) | EP2345065A2 (https=) |
| JP (1) | JP5785496B2 (https=) |
| KR (1) | KR101639771B1 (https=) |
| CN (1) | CN102177573B (https=) |
| WO (1) | WO2010051133A2 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7445978B2 (en) * | 2005-05-04 | 2008-11-04 | Chartered Semiconductor Manufacturing, Ltd | Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS |
| DE102009031114B4 (de) * | 2009-06-30 | 2011-07-07 | Globalfoundries Dresden Module One LLC & CO. KG, 01109 | Halbleiterelement, das in einem kristallinen Substratmaterial hergestellt ist und ein eingebettetes in-situ n-dotiertes Halbleitermaterial aufweist, und Verfahren zur Herstellung desselben |
| US8361867B2 (en) * | 2010-03-19 | 2013-01-29 | Acorn Technologies, Inc. | Biaxial strained field effect transistor devices |
| US8492234B2 (en) * | 2010-06-29 | 2013-07-23 | International Business Machines Corporation | Field effect transistor device |
| DE102010030768B4 (de) | 2010-06-30 | 2012-05-31 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | Herstellverfahren für ein Halbleiterbauelement als Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit und Transistor |
| DE102011076695B4 (de) * | 2011-05-30 | 2013-05-08 | Globalfoundries Inc. | Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist |
| US9190471B2 (en) * | 2012-04-13 | 2015-11-17 | Globalfoundries U.S.2 Llc | Semiconductor structure having a source and a drain with reverse facets |
| US9012999B2 (en) * | 2012-08-21 | 2015-04-21 | Stmicroelectronics, Inc. | Semiconductor device with an inclined source/drain and associated methods |
| US20140057399A1 (en) * | 2012-08-24 | 2014-02-27 | International Business Machines Corporation | Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer |
| US20140170826A1 (en) * | 2012-12-19 | 2014-06-19 | Acorn Technologies, Inc. | Biaxial strained field effect transistor devices |
| US9627480B2 (en) * | 2014-06-26 | 2017-04-18 | Globalfoundries Inc. | Junction butting structure using nonuniform trench shape |
| US9647073B2 (en) | 2014-10-29 | 2017-05-09 | Globalfoundries Inc. | Transistor structures and fabrication methods thereof |
| CN105762106B (zh) * | 2014-12-18 | 2021-02-19 | 联华电子股份有限公司 | 半导体装置及其制作工艺 |
| CN107636804B (zh) * | 2015-06-27 | 2022-06-07 | 英特尔公司 | 用以使用量化金属形成与半导体的欧姆接触的方法 |
| CN107275210B (zh) * | 2016-04-06 | 2023-05-02 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
| US10643893B2 (en) | 2016-06-29 | 2020-05-05 | International Business Machines Corporation | Surface area and Schottky barrier height engineering for contact trench epitaxy |
| US10396208B2 (en) | 2017-01-13 | 2019-08-27 | International Business Machines Corporation | Vertical transistors with improved top source/drain junctions |
| KR102257419B1 (ko) | 2017-06-07 | 2021-05-31 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US10217660B2 (en) * | 2017-07-18 | 2019-02-26 | Globalfoundries Inc. | Technique for patterning active regions of transistor elements in a late manufacturing stage |
| US10580977B2 (en) | 2018-07-24 | 2020-03-03 | International Business Machines Corporation | Tightly integrated 1T1R ReRAM for planar technology |
| US10777642B2 (en) * | 2019-01-30 | 2020-09-15 | Globalfoundries Inc. | Formation of enhanced faceted raised source/drain epi material for transistor devices |
| US10825897B2 (en) | 2019-01-30 | 2020-11-03 | Globalfoundries Inc. | Formation of enhanced faceted raised source/drain EPI material for transistor devices |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05283685A (ja) * | 1992-04-03 | 1993-10-29 | Ricoh Co Ltd | 半導体装置とその製造方法 |
| US5323053A (en) * | 1992-05-28 | 1994-06-21 | At&T Bell Laboratories | Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates |
| JPH07183486A (ja) * | 1993-12-24 | 1995-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2964925B2 (ja) * | 1994-10-12 | 1999-10-18 | 日本電気株式会社 | 相補型ｍｉｓ型ｆｅｔの製造方法 |
| JPH08340106A (ja) * | 1995-06-12 | 1996-12-24 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
| JP2006024809A (ja) * | 2004-07-09 | 2006-01-26 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| US7253086B2 (en) * | 2004-10-18 | 2007-08-07 | Texas Instruments Incorporated | Recessed drain extensions in transistor device |
| US20060115949A1 (en) * | 2004-12-01 | 2006-06-01 | Freescale Semiconductor, Inc. | Semiconductor fabrication process including source/drain recessing and filling |
| JP4369359B2 (ja) | 2004-12-28 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
| US7569443B2 (en) * | 2005-06-21 | 2009-08-04 | Intel Corporation | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate |
| US7579617B2 (en) * | 2005-06-22 | 2009-08-25 | Fujitsu Microelectronics Limited | Semiconductor device and production method thereof |
| JP2007165817A (ja) * | 2005-11-18 | 2007-06-28 | Sony Corp | 半導体装置およびその製造方法 |
| US7560758B2 (en) * | 2006-06-29 | 2009-07-14 | International Business Machines Corporation | MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same |
| US8853746B2 (en) * | 2006-06-29 | 2014-10-07 | International Business Machines Corporation | CMOS devices with stressed channel regions, and methods for fabricating the same |
| US20080237634A1 (en) * | 2007-03-30 | 2008-10-02 | International Business Machines Corporation | Crystallographic recess etch for embedded semiconductor region |
-
2008
- 2008-10-10 US US12/249,570 patent/US7994014B2/en active Active
-
2009
- 2009-10-05 JP JP2011531097A patent/JP5785496B2/ja not_active Expired - Fee Related
- 2009-10-05 KR KR1020117010636A patent/KR101639771B1/ko not_active Expired - Fee Related
- 2009-10-05 CN CN200980141102.2A patent/CN102177573B/zh not_active Expired - Fee Related
- 2009-10-05 EP EP09807584A patent/EP2345065A2/en not_active Withdrawn
- 2009-10-05 WO PCT/US2009/059560 patent/WO2010051133A2/en not_active Ceased
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