KR101639771B1 - 패싯 형상의 실리사이드 콘택들을 갖는 반도체 디바이스, 및 관련 제조 방법 - Google Patents

패싯 형상의 실리사이드 콘택들을 갖는 반도체 디바이스, 및 관련 제조 방법 Download PDF

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KR101639771B1
KR101639771B1 KR1020117010636A KR20117010636A KR101639771B1 KR 101639771 B1 KR101639771 B1 KR 101639771B1 KR 1020117010636 A KR1020117010636 A KR 1020117010636A KR 20117010636 A KR20117010636 A KR 20117010636A KR 101639771 B1 KR101639771 B1 KR 101639771B1
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semiconductor material
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recesses
semiconductor
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KR20110091667A (ko
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프란크 빈 양
로히트 팔
마이클 하그로브
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10D30/0275—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline semiconductor source or drain regions resulting in recessed gates, e.g. forming raised source or drain regions
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
KR1020117010636A 2008-10-10 2009-10-05 패싯 형상의 실리사이드 콘택들을 갖는 반도체 디바이스, 및 관련 제조 방법 Expired - Fee Related KR101639771B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/249,570 US7994014B2 (en) 2008-10-10 2008-10-10 Semiconductor devices having faceted silicide contacts, and related fabrication methods
US12/249,570 2008-10-10

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Publication Number Publication Date
KR20110091667A KR20110091667A (ko) 2011-08-12
KR101639771B1 true KR101639771B1 (ko) 2016-07-14

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US (1) US7994014B2 (https=)
EP (1) EP2345065A2 (https=)
JP (1) JP5785496B2 (https=)
KR (1) KR101639771B1 (https=)
CN (1) CN102177573B (https=)
WO (1) WO2010051133A2 (https=)

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US8361867B2 (en) * 2010-03-19 2013-01-29 Acorn Technologies, Inc. Biaxial strained field effect transistor devices
US8492234B2 (en) * 2010-06-29 2013-07-23 International Business Machines Corporation Field effect transistor device
DE102010030768B4 (de) 2010-06-30 2012-05-31 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Herstellverfahren für ein Halbleiterbauelement als Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit und Transistor
DE102011076695B4 (de) * 2011-05-30 2013-05-08 Globalfoundries Inc. Transistoren mit eingebettetem verformungsinduzierenden Material, das in durch einen Oxidationsätzprozess erzeugten Aussparungen ausgebildet ist
US9190471B2 (en) * 2012-04-13 2015-11-17 Globalfoundries U.S.2 Llc Semiconductor structure having a source and a drain with reverse facets
US9012999B2 (en) * 2012-08-21 2015-04-21 Stmicroelectronics, Inc. Semiconductor device with an inclined source/drain and associated methods
US20140057399A1 (en) * 2012-08-24 2014-02-27 International Business Machines Corporation Using Fast Anneal to Form Uniform Ni(Pt)Si(Ge) Contacts on SiGe Layer
US20140170826A1 (en) * 2012-12-19 2014-06-19 Acorn Technologies, Inc. Biaxial strained field effect transistor devices
US9627480B2 (en) * 2014-06-26 2017-04-18 Globalfoundries Inc. Junction butting structure using nonuniform trench shape
US9647073B2 (en) 2014-10-29 2017-05-09 Globalfoundries Inc. Transistor structures and fabrication methods thereof
CN105762106B (zh) * 2014-12-18 2021-02-19 联华电子股份有限公司 半导体装置及其制作工艺
CN107636804B (zh) * 2015-06-27 2022-06-07 英特尔公司 用以使用量化金属形成与半导体的欧姆接触的方法
CN107275210B (zh) * 2016-04-06 2023-05-02 联华电子股份有限公司 半导体元件及其制作方法
US10643893B2 (en) 2016-06-29 2020-05-05 International Business Machines Corporation Surface area and Schottky barrier height engineering for contact trench epitaxy
US10396208B2 (en) 2017-01-13 2019-08-27 International Business Machines Corporation Vertical transistors with improved top source/drain junctions
KR102257419B1 (ko) 2017-06-07 2021-05-31 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10217660B2 (en) * 2017-07-18 2019-02-26 Globalfoundries Inc. Technique for patterning active regions of transistor elements in a late manufacturing stage
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EP2345065A2 (en) 2011-07-20
US7994014B2 (en) 2011-08-09
US20100090289A1 (en) 2010-04-15
CN102177573B (zh) 2014-01-22
WO2010051133A3 (en) 2010-10-07
KR20110091667A (ko) 2011-08-12
JP2012505547A (ja) 2012-03-01
JP5785496B2 (ja) 2015-09-30
CN102177573A (zh) 2011-09-07
WO2010051133A2 (en) 2010-05-06

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