JP2012505293A5 - - Google Patents
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- Publication number
- JP2012505293A5 JP2012505293A5 JP2011531103A JP2011531103A JP2012505293A5 JP 2012505293 A5 JP2012505293 A5 JP 2012505293A5 JP 2011531103 A JP2011531103 A JP 2011531103A JP 2011531103 A JP2011531103 A JP 2011531103A JP 2012505293 A5 JP2012505293 A5 JP 2012505293A5
- Authority
- JP
- Japan
- Prior art keywords
- post
- formulation
- etch
- cleaning composition
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims description 95
- 239000010949 copper Substances 0.000 claims description 72
- 238000004140 cleaning Methods 0.000 claims description 62
- 230000009977 dual effect Effects 0.000 claims description 54
- 238000004377 microelectronic Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 44
- 238000009472 formulation Methods 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 230000002378 acidificating effect Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 14
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 12
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 10
- 239000002738 chelating agent Substances 0.000 claims description 10
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 10
- 239000004094 surface-active agent Substances 0.000 claims description 10
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 9
- FCKYPQBAHLOOJQ-UHFFFAOYSA-N Cyclohexane-1,2-diaminetetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)C1CCCCC1N(CC(O)=O)CC(O)=O FCKYPQBAHLOOJQ-UHFFFAOYSA-N 0.000 claims description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002736 nonionic surfactant Substances 0.000 claims description 9
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 claims description 6
- 229960005070 ascorbic acid Drugs 0.000 claims description 6
- 235000010323 ascorbic acid Nutrition 0.000 claims description 6
- 239000011668 ascorbic acid Substances 0.000 claims description 6
- 239000003638 chemical reducing agent Substances 0.000 claims description 6
- 239000004615 ingredient Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims 1
- 239000005977 Ethylene Substances 0.000 claims 1
- 125000003827 glycol group Chemical group 0.000 claims 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 0 CC(C)CC(C)(C#CC(C)(CCl(C)C)OCC*1CC1)OCCO Chemical compound CC(C)CC(C)(C#CC(C)(CCl(C)C)OCC*1CC1)OCCO 0.000 description 1
- ZBBFYXYWRHOSML-UHFFFAOYSA-N CC(C)CC(C)(C(CCNC)CCO)C#CC(C)(CC(C)C)OCCO Chemical compound CC(C)CC(C)(C(CCNC)CCO)C#CC(C)(CC(C)C)OCCO ZBBFYXYWRHOSML-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10409808P | 2008-10-09 | 2008-10-09 | |
| US61/104,098 | 2008-10-09 | ||
| PCT/US2009/059603 WO2010042457A1 (en) | 2008-10-09 | 2009-10-06 | Aqueous acidic formulations for copper oxide etch residue removal and prevention of copper electrodeposition |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012505293A JP2012505293A (ja) | 2012-03-01 |
| JP2012505293A5 true JP2012505293A5 (OSRAM) | 2012-11-01 |
| JP5476388B2 JP5476388B2 (ja) | 2014-04-23 |
Family
ID=41402304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011531103A Active JP5476388B2 (ja) | 2008-10-09 | 2009-10-06 | 酸化銅エッチ残渣除去および、銅電着の防止のための水性の酸性洗浄用組成物 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US8481472B2 (OSRAM) |
| EP (1) | EP2334774B1 (OSRAM) |
| JP (1) | JP5476388B2 (OSRAM) |
| KR (2) | KR101486116B1 (OSRAM) |
| CN (1) | CN102177230B (OSRAM) |
| BR (1) | BRPI0920545A2 (OSRAM) |
| CA (1) | CA2740027A1 (OSRAM) |
| IL (1) | IL212158A0 (OSRAM) |
| MY (1) | MY160647A (OSRAM) |
| WO (1) | WO2010042457A1 (OSRAM) |
| ZA (1) | ZA201103311B (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101486116B1 (ko) * | 2008-10-09 | 2015-01-28 | 아반토르 퍼포먼스 머티리얼스, 인크. | 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 |
| JP5519728B2 (ja) * | 2011-05-17 | 2014-06-11 | 富士フイルム株式会社 | エッチング方法及びこれに用いられるエッチング液、これを用いた半導体素子の製造方法 |
| TWI572711B (zh) * | 2012-10-16 | 2017-03-01 | 盟智科技股份有限公司 | 半導體製程用的清洗組成物及清洗方法 |
| KR102377875B1 (ko) * | 2015-10-07 | 2022-03-25 | 주식회사 이엔에프테크놀로지 | 유리기판 세정액 조성물 |
| US11678433B2 (en) | 2018-09-06 | 2023-06-13 | D-Wave Systems Inc. | Printed circuit board assembly for edge-coupling to an integrated circuit |
| US11647590B2 (en) | 2019-06-18 | 2023-05-09 | D-Wave Systems Inc. | Systems and methods for etching of metals |
| US12033996B2 (en) | 2019-09-23 | 2024-07-09 | 1372934 B.C. Ltd. | Systems and methods for assembling processor systems |
Family Cites Families (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
| US5855811A (en) | 1996-10-03 | 1999-01-05 | Micron Technology, Inc. | Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
| US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6755989B2 (en) | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
| US6224785B1 (en) | 1997-08-29 | 2001-05-01 | Advanced Technology Materials, Inc. | Aqueous ammonium fluoride and amine containing compositions for cleaning inorganic residues on semiconductor substrates |
| US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
| US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
| US6361712B1 (en) | 1999-10-15 | 2002-03-26 | Arch Specialty Chemicals, Inc. | Composition for selective etching of oxides over metals |
| US6468913B1 (en) | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
| US7456140B2 (en) * | 2000-07-10 | 2008-11-25 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6777380B2 (en) * | 2000-07-10 | 2004-08-17 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductor devices |
| US6391794B1 (en) | 2000-12-07 | 2002-05-21 | Micron Technology, Inc. | Composition and method for cleaning residual debris from semiconductor surfaces |
| ATE487776T1 (de) * | 2001-03-27 | 2010-11-15 | Advanced Tech Materials | Wässriges reinigungsmittel mit kupferspezifischem korrosionsschutzmittel zur abreinigung anorganischer reste von halbleitersubstraten |
| US6627587B2 (en) * | 2001-04-19 | 2003-09-30 | Esc Inc. | Cleaning compositions |
| MY139607A (en) | 2001-07-09 | 2009-10-30 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
| US6794292B2 (en) | 2001-07-16 | 2004-09-21 | United Microelectronics Corp. | Extrusion-free wet cleaning process for copper-dual damascene structures |
| JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
| US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
| US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
| JP4374989B2 (ja) * | 2003-11-12 | 2009-12-02 | 三菱瓦斯化学株式会社 | 洗浄液およびそれを用いた洗浄方法 |
| JP4456424B2 (ja) * | 2004-06-29 | 2010-04-28 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物 |
| US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
| JP2006154722A (ja) * | 2004-10-28 | 2006-06-15 | Daikin Ind Ltd | Ｃｕ／ｌｏｗ−ｋ多層配線構造のアッシング残渣の剥離液及び剥離方法 |
| KR100675284B1 (ko) * | 2005-02-01 | 2007-01-26 | 삼성전자주식회사 | 마이크로일렉트로닉 세정제 및 이것을 사용하여반도체소자를 제조하는 방법 |
| US7718590B2 (en) | 2005-02-25 | 2010-05-18 | Ekc Technology, Inc. | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-k dielectric material |
| US8114220B2 (en) | 2005-04-15 | 2012-02-14 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| KR100705416B1 (ko) | 2005-06-15 | 2007-04-10 | 삼성전자주식회사 | 포토레지스트 제거용 조성물, 이의 제조방법, 이를 이용한포토레지스트의 제거 방법 및 반도체 장치의 제조 방법 |
| US7700533B2 (en) * | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
| KR100655647B1 (ko) * | 2005-07-04 | 2006-12-08 | 삼성전자주식회사 | 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법 |
| AU2006340825A1 (en) | 2005-11-09 | 2007-10-04 | Advanced Technology Materials, Inc. | Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon |
| US7534753B2 (en) * | 2006-01-12 | 2009-05-19 | Air Products And Chemicals, Inc. | pH buffered aqueous cleaning composition and method for removing photoresist residue |
| JP2007220833A (ja) * | 2006-02-15 | 2007-08-30 | Daikin Ind Ltd | エッチング水溶液 |
| US7947637B2 (en) * | 2006-06-30 | 2011-05-24 | Fujifilm Electronic Materials, U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
| KR101486116B1 (ko) * | 2008-10-09 | 2015-01-28 | 아반토르 퍼포먼스 머티리얼스, 인크. | 산화구리 에칭 잔여물 제거 및 구리 전착 방지용 수성 산성 배합물 |
| US8444768B2 (en) * | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
| WO2013187313A1 (ja) * | 2012-06-13 | 2013-12-19 | 三菱瓦斯化学株式会社 | 洗浄用液体組成物、半導体素子の洗浄方法、および半導体素子の製造方法 |
-
2009
- 2009-10-06 KR KR1020117010361A patent/KR101486116B1/ko active Active
- 2009-10-06 WO PCT/US2009/059603 patent/WO2010042457A1/en not_active Ceased
- 2009-10-06 CN CN200980140203.8A patent/CN102177230B/zh active Active
- 2009-10-06 CA CA2740027A patent/CA2740027A1/en not_active Abandoned
- 2009-10-06 KR KR1020147025882A patent/KR101521066B1/ko active Active
- 2009-10-06 BR BRPI0920545A patent/BRPI0920545A2/pt not_active Application Discontinuation
- 2009-10-06 MY MYPI2011001485A patent/MY160647A/en unknown
- 2009-10-06 JP JP2011531103A patent/JP5476388B2/ja active Active
- 2009-10-06 US US12/998,296 patent/US8481472B2/en active Active
- 2009-10-06 EP EP09736352.7A patent/EP2334774B1/en not_active Not-in-force
-
2011
- 2011-04-05 IL IL212158A patent/IL212158A0/en not_active IP Right Cessation
- 2011-05-06 ZA ZA2011/03311A patent/ZA201103311B/en unknown
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