JP2012503330A - 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法 - Google Patents

直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法 Download PDF

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Publication number
JP2012503330A
JP2012503330A JP2011527849A JP2011527849A JP2012503330A JP 2012503330 A JP2012503330 A JP 2012503330A JP 2011527849 A JP2011527849 A JP 2011527849A JP 2011527849 A JP2011527849 A JP 2011527849A JP 2012503330 A JP2012503330 A JP 2012503330A
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JP
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Prior art keywords
pinhole
mask layer
free mask
patterned
layer
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Pending
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JP2011527849A
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English (en)
Japanese (ja)
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JP2012503330A5 (OSRAM
Inventor
クージンズ、ピーター
ルアン、シン−シャオ
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サンパワー コーポレイション
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Publication of JP2012503330A publication Critical patent/JP2012503330A/ja
Publication of JP2012503330A5 publication Critical patent/JP2012503330A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP2011527849A 2008-09-19 2009-07-17 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法 Pending JP2012503330A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/233,819 US20100071765A1 (en) 2008-09-19 2008-09-19 Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
US12/233,819 2008-09-19
PCT/US2009/050960 WO2010033296A1 (en) 2008-09-19 2009-07-17 Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013235039A Division JP2014060430A (ja) 2008-09-19 2013-11-13 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JP2012503330A true JP2012503330A (ja) 2012-02-02
JP2012503330A5 JP2012503330A5 (OSRAM) 2012-08-23

Family

ID=42036391

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JP2011527849A Pending JP2012503330A (ja) 2008-09-19 2009-07-17 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法
JP2013235039A Pending JP2014060430A (ja) 2008-09-19 2013-11-13 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法

Family Applications After (1)

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JP2013235039A Pending JP2014060430A (ja) 2008-09-19 2013-11-13 直接パターンによるピンホールフリーのマスク層を利用した太陽電池の製造方法

Country Status (6)

Country Link
US (1) US20100071765A1 (OSRAM)
EP (1) EP2329529A4 (OSRAM)
JP (2) JP2012503330A (OSRAM)
KR (1) KR20110063546A (OSRAM)
CN (1) CN102160192B (OSRAM)
WO (1) WO2010033296A1 (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015159456A1 (ja) * 2014-04-16 2015-10-22 三菱電機株式会社 太陽電池および太陽電池の製造方法
JP2016506074A (ja) * 2012-12-18 2016-02-25 サンパワー コーポレイション エッチング耐性膜を用いた太陽電池エミッタ領域の製造
JP2016512928A (ja) * 2013-03-15 2016-05-09 サンパワー コーポレイション 太陽電池の低減された接触抵抗率及び向上された耐用期間
JP2017538289A (ja) * 2014-12-16 2017-12-21 サンパワー コーポレイション 太陽電池の箔ベースのメタライゼーションのための厚みのある損傷バッファ
TWI631724B (zh) * 2013-03-13 2018-08-01 美商梅林太陽能科技股份有限公司 形成光伏打電池之方法
JP2019009473A (ja) * 2015-03-24 2019-01-17 パナソニックＩｐマネジメント株式会社 太陽電池セルの製造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
US8211731B2 (en) * 2010-06-07 2012-07-03 Sunpower Corporation Ablation of film stacks in solar cell fabrication processes
US8586403B2 (en) * 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US8569096B1 (en) * 2013-03-13 2013-10-29 Gtat Corporation Free-standing metallic article for semiconductors
US8916038B2 (en) 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
JP6692797B2 (ja) * 2015-03-31 2020-05-13 株式会社カネカ 太陽電池及びその製造方法
US20160380127A1 (en) 2015-06-26 2016-12-29 Richard Hamilton SEWELL Leave-In Etch Mask for Foil-Based Metallization of Solar Cells
IT201900006740A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
KR102858844B1 (ko) * 2020-11-24 2025-09-12 삼성디스플레이 주식회사 마스크, 마스크 제조 방법, 및 표시 패널 제조 방법
CN117374169B (zh) 2023-12-07 2024-03-12 浙江晶科能源有限公司 背接触太阳能电池的制备方法及背接触太阳能电池
CN117673207B (zh) * 2024-02-01 2024-05-14 通威太阳能(眉山)有限公司 一种太阳电池的制备方法、太阳电池及光伏组件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041361A (en) * 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
JPH046121A (ja) * 1990-04-23 1992-01-10 Shin Etsu Chem Co Ltd 光ファイバ用ガラス母材の製造方法
JP2002012972A (ja) * 2000-02-17 2002-01-15 Applied Materials Inc アモルファスカーボン層の堆積方法
JP2006080450A (ja) * 2004-09-13 2006-03-23 Sharp Corp 太陽電池の製造方法
JP2008078634A (ja) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2008065918A1 (fr) * 2006-12-01 2008-06-05 Sharp Kabushiki Kaisha Cellule solaire et son procédé de fabrication

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353778A (en) * 1981-09-04 1982-10-12 International Business Machines Corporation Method of etching polyimide
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
JPH03285332A (ja) * 1990-04-02 1991-12-16 Ricoh Co Ltd マスキングフィルム
JP2986875B2 (ja) * 1990-09-07 1999-12-06 キヤノン株式会社 集積化太陽電池
WO1993018545A1 (en) * 1992-03-10 1993-09-16 Lasa Industries Inc. Method of laser etching of silicon dioxide
US5759745A (en) * 1995-12-05 1998-06-02 Materials Research Group, Inc. Method of using amorphous silicon as a photoresist
JP2005167291A (ja) * 1996-12-20 2005-06-23 Mitsubishi Electric Corp 太陽電池の製造方法及び半導体装置の製造方法
EP0964251B1 (en) * 1997-12-15 2008-07-23 Seiko Instruments Inc. Optical waveguide probe and its manufacturing method
JPH11220101A (ja) * 1998-01-30 1999-08-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6696008B2 (en) * 2000-05-25 2004-02-24 Westar Photonics Inc. Maskless laser beam patterning ablation of multilayered structures with continuous monitoring of ablation
US20020173157A1 (en) * 2001-03-29 2002-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. Dual damascene method employing composite low dielectric constant dielectric layer having intrinsic etch stop characteristics
EP1378947A1 (en) * 2002-07-01 2004-01-07 Interuniversitair Microelektronica Centrum Vzw Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates
US7388147B2 (en) * 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US7122392B2 (en) * 2003-06-30 2006-10-17 Intel Corporation Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
JP2005136062A (ja) * 2003-10-29 2005-05-26 Sharp Corp 太陽電池の製造方法
US20050151129A1 (en) * 2004-01-14 2005-07-14 Rahul Gupta Deposition of conducting polymers
DE102004050269A1 (de) * 2004-10-14 2006-04-20 Institut Für Solarenergieforschung Gmbh Verfahren zur Kontakttrennung elektrisch leitfähiger Schichten auf rückkontaktierten Solarzellen und Solarzelle
EP1763086A1 (en) * 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
GB0612754D0 (en) * 2006-06-27 2006-08-09 Univ Cambridge Tech Semiconductor device transducer and method
JP4630294B2 (ja) * 2007-01-29 2011-02-09 シャープ株式会社 光電変換装置及びその製造方法
US20080314443A1 (en) * 2007-06-23 2008-12-25 Christopher Michael Bonner Back-contact solar cell for high power-over-weight applications
US7517709B1 (en) * 2007-11-16 2009-04-14 Applied Materials, Inc. Method of forming backside point contact structures for silicon solar cells

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041361A (en) * 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
JPH046121A (ja) * 1990-04-23 1992-01-10 Shin Etsu Chem Co Ltd 光ファイバ用ガラス母材の製造方法
JP2002012972A (ja) * 2000-02-17 2002-01-15 Applied Materials Inc アモルファスカーボン層の堆積方法
JP2006080450A (ja) * 2004-09-13 2006-03-23 Sharp Corp 太陽電池の製造方法
JP2008078634A (ja) * 2006-08-25 2008-04-03 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
WO2008065918A1 (fr) * 2006-12-01 2008-06-05 Sharp Kabushiki Kaisha Cellule solaire et son procédé de fabrication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016506074A (ja) * 2012-12-18 2016-02-25 サンパワー コーポレイション エッチング耐性膜を用いた太陽電池エミッタ領域の製造
TWI631724B (zh) * 2013-03-13 2018-08-01 美商梅林太陽能科技股份有限公司 形成光伏打電池之方法
JP2016512928A (ja) * 2013-03-15 2016-05-09 サンパワー コーポレイション 太陽電池の低減された接触抵抗率及び向上された耐用期間
WO2015159456A1 (ja) * 2014-04-16 2015-10-22 三菱電機株式会社 太陽電池および太陽電池の製造方法
JP2017538289A (ja) * 2014-12-16 2017-12-21 サンパワー コーポレイション 太陽電池の箔ベースのメタライゼーションのための厚みのある損傷バッファ
JP2019009473A (ja) * 2015-03-24 2019-01-17 パナソニックＩｐマネジメント株式会社 太陽電池セルの製造方法

Also Published As

Publication number Publication date
CN102160192B (zh) 2014-03-12
EP2329529A1 (en) 2011-06-08
US20100071765A1 (en) 2010-03-25
KR20110063546A (ko) 2011-06-10
CN102160192A (zh) 2011-08-17
WO2010033296A1 (en) 2010-03-25
EP2329529A4 (en) 2017-10-11
JP2014060430A (ja) 2014-04-03

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