JP2012500505A5 - - Google Patents

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Publication number
JP2012500505A5
JP2012500505A5 JP2011523981A JP2011523981A JP2012500505A5 JP 2012500505 A5 JP2012500505 A5 JP 2012500505A5 JP 2011523981 A JP2011523981 A JP 2011523981A JP 2011523981 A JP2011523981 A JP 2011523981A JP 2012500505 A5 JP2012500505 A5 JP 2012500505A5
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JP
Japan
Prior art keywords
spaced apart
circular
gas
gas outlets
baffle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2011523981A
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English (en)
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JP2012500505A (ja
JP5757869B2 (ja
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Priority claimed from US12/195,127 external-priority patent/US9222172B2/en
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Publication of JP2012500505A publication Critical patent/JP2012500505A/ja
Publication of JP2012500505A5 publication Critical patent/JP2012500505A5/ja
Application granted granted Critical
Publication of JP5757869B2 publication Critical patent/JP5757869B2/ja
Expired - Fee Related legal-status Critical Current
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Description

図２Ｂを参照すると、幾つかの実施形態においては、複数のガス出口２１０を、バッフル２００の前側２０１上に円形パターンで均等に離間配置することができる。代替的に、複数のガス出口２１０を、基板１０６の表面へのガスの流れを容易にするのに必要な任意の好適なパターンで離間配置することもでき、従って、その構成は、均等又は円形に離間配置することに限定されるものではない。
JP2011523981A 2008-08-20 2009-08-20 表面処理された窒化アルミニウム製バッフルを製造する方法 Expired - Fee Related JP5757869B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/195,127 US9222172B2 (en) 2008-08-20 2008-08-20 Surface treated aluminum nitride baffle
US12/195,127 2008-08-20
PCT/US2009/054416 WO2010022212A2 (en) 2008-08-20 2009-08-20 Surface treated aluminum nitride baffle

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015084016A Division JP2015146459A (ja) 2008-08-20 2015-04-16 表面処理された窒化アルミニウム製バッフル

Publications (3)

Publication Number Publication Date
JP2012500505A JP2012500505A (ja) 2012-01-05
JP2012500505A5 true JP2012500505A5 (ja) 2012-10-04
JP5757869B2 JP5757869B2 (ja) 2015-08-05

Family

ID=41696788

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2011523981A Expired - Fee Related JP5757869B2 (ja) 2008-08-20 2009-08-20 表面処理された窒化アルミニウム製バッフルを製造する方法
JP2015084016A Pending JP2015146459A (ja) 2008-08-20 2015-04-16 表面処理された窒化アルミニウム製バッフル

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015084016A Pending JP2015146459A (ja) 2008-08-20 2015-04-16 表面処理された窒化アルミニウム製バッフル

Country Status (7)

Country Link
US (2) US9222172B2 (ja)
JP (2) JP5757869B2 (ja)
KR (1) KR20110053360A (ja)
CN (1) CN102132382B (ja)
SG (1) SG193208A1 (ja)
TW (1) TWI480922B (ja)
WO (1) WO2010022212A2 (ja)

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US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
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US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
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US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
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US10662529B2 (en) * 2016-01-05 2020-05-26 Applied Materials, Inc. Cooled gas feed block with baffle and nozzle for HDP-CVD
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US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10211099B2 (en) 2016-12-19 2019-02-19 Lam Research Corporation Chamber conditioning for remote plasma process
US10409295B2 (en) * 2016-12-31 2019-09-10 Applied Materials, Inc. Methods and apparatus for enhanced flow detection repeatability of thermal-based mass flow controllers (MFCS)
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
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