JP2012231103A5 - - Google Patents
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- Publication number
- JP2012231103A5 JP2012231103A5 JP2011151709A JP2011151709A JP2012231103A5 JP 2012231103 A5 JP2012231103 A5 JP 2012231103A5 JP 2011151709 A JP2011151709 A JP 2011151709A JP 2011151709 A JP2011151709 A JP 2011151709A JP 2012231103 A5 JP2012231103 A5 JP 2012231103A5
- Authority
- JP
- Japan
- Prior art keywords
- gallium nitride
- nitride crystal
- ave
- dislocation
- plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 claims 17
- 229910002601 GaN Inorganic materials 0.000 claims 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011151709A JP2012231103A (ja) | 2011-04-15 | 2011-07-08 | Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 |
| EP12771993.8A EP2698456B1 (en) | 2011-04-15 | 2012-04-13 | Gallium nitride crystal |
| PCT/JP2012/060187 WO2012141317A1 (ja) | 2011-04-15 | 2012-04-13 | Iii族窒化物結晶の製造方法およびiii族窒化物結晶 |
| KR1020137026845A KR101882541B1 (ko) | 2011-04-15 | 2012-04-13 | Iii 족 질화물 결정의 제조 방법 및 iii 족 질화물 결정 |
| CN201280018140.0A CN103502514A (zh) | 2011-04-15 | 2012-04-13 | Iii族氮化物结晶的制造方法和iii族氮化物结晶 |
| US14/054,036 US9502241B2 (en) | 2011-04-15 | 2013-10-15 | Group III nitride crystal production method and group III nitride crystal |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011091586 | 2011-04-15 | ||
| JP2011091586 | 2011-04-15 | ||
| JP2011151709A JP2012231103A (ja) | 2011-04-15 | 2011-07-08 | Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016021509A Division JP6103089B2 (ja) | 2011-04-15 | 2016-02-08 | Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012231103A JP2012231103A (ja) | 2012-11-22 |
| JP2012231103A5 true JP2012231103A5 (OSRAM) | 2014-07-24 |
Family
ID=47009475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011151709A Withdrawn JP2012231103A (ja) | 2011-04-15 | 2011-07-08 | Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9502241B2 (OSRAM) |
| EP (1) | EP2698456B1 (OSRAM) |
| JP (1) | JP2012231103A (OSRAM) |
| KR (1) | KR101882541B1 (OSRAM) |
| CN (1) | CN103502514A (OSRAM) |
| WO (1) | WO2012141317A1 (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3315639B1 (en) | 2013-08-08 | 2024-05-01 | Mitsubishi Chemical Corporation | Self-standing gan substrate, gan crystal, method for producing gan single crystal, and method for producing semiconductor device |
| JP6477501B2 (ja) | 2014-01-17 | 2019-03-06 | 三菱ケミカル株式会社 | ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法 |
| WO2015118920A1 (ja) * | 2014-02-07 | 2015-08-13 | 日本碍子株式会社 | 複合基板、発光素子及びそれらの製造方法 |
| CN107574479A (zh) * | 2017-08-14 | 2018-01-12 | 南京大学 | 一种多功能氢化物气相外延生长系统及应用 |
| JP6839694B2 (ja) * | 2018-12-17 | 2021-03-10 | 株式会社デンソー | 酸化ガリウム膜の成膜方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180270B1 (en) * | 1998-04-24 | 2001-01-30 | The United States Of America As Represented By The Secretary Of The Army | Low defect density gallium nitride epilayer and method of preparing the same |
| JP4618836B2 (ja) * | 2000-01-04 | 2011-01-26 | シャープ株式会社 | 窒化物系化合物半導体基板およびその製造方法 |
| JP4932121B2 (ja) | 2002-03-26 | 2012-05-16 | 日本電気株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法 |
| JP2003327497A (ja) | 2002-05-13 | 2003-11-19 | Sumitomo Electric Ind Ltd | ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
| JP4943132B2 (ja) * | 2005-12-28 | 2012-05-30 | 日本碍子株式会社 | ＡｌＮ系ＩＩＩ族窒化物エピタキシャル膜の転位低減方法 |
| JP4816277B2 (ja) * | 2006-06-14 | 2011-11-16 | 日立電線株式会社 | 窒化物半導体自立基板及び窒化物半導体発光素子 |
| JP4810517B2 (ja) * | 2007-09-10 | 2011-11-09 | 日本電気株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板 |
| US20100213576A1 (en) | 2007-10-09 | 2010-08-26 | Panasonic Corporation | Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate |
| JP5108641B2 (ja) * | 2008-06-12 | 2012-12-26 | 住友電気工業株式会社 | ＧａＮ単結晶基板、窒化物系半導体エピタキシャル基板、及び、窒化物系半導体素子 |
| JP2011006304A (ja) * | 2009-06-29 | 2011-01-13 | Hitachi Cable Ltd | 窒化物半導体基板およびその製造方法 |
-
2011
- 2011-07-08 JP JP2011151709A patent/JP2012231103A/ja not_active Withdrawn
-
2012
- 2012-04-13 EP EP12771993.8A patent/EP2698456B1/en active Active
- 2012-04-13 KR KR1020137026845A patent/KR101882541B1/ko active Active
- 2012-04-13 CN CN201280018140.0A patent/CN103502514A/zh active Pending
- 2012-04-13 WO PCT/JP2012/060187 patent/WO2012141317A1/ja not_active Ceased
-
2013
- 2013-10-15 US US14/054,036 patent/US9502241B2/en active Active
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