JP2012229454A5 - - Google Patents

Download PDF

Info

Publication number
JP2012229454A5
JP2012229454A5 JP2011096591A JP2011096591A JP2012229454A5 JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5 JP 2011096591 A JP2011096591 A JP 2011096591A JP 2011096591 A JP2011096591 A JP 2011096591A JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5
Authority
JP
Japan
Prior art keywords
sputtering target
alloy
contained
producing
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011096591A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012229454A (ja
JP5153911B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2011096591A external-priority patent/JP5153911B2/ja
Priority to JP2011096591A priority Critical patent/JP5153911B2/ja
Priority to TW101114153A priority patent/TWI438296B/zh
Priority to KR1020137011164A priority patent/KR101358345B1/ko
Priority to CN201280003518.XA priority patent/CN103261473B/zh
Priority to US14/111,504 priority patent/US9528181B2/en
Priority to EP12774193.2A priority patent/EP2700735B1/en
Priority to PCT/JP2012/061301 priority patent/WO2012144655A1/ja
Publication of JP2012229454A publication Critical patent/JP2012229454A/ja
Publication of JP2012229454A5 publication Critical patent/JP2012229454A5/ja
Publication of JP5153911B2 publication Critical patent/JP5153911B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011096591A 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法 Expired - Fee Related JP5153911B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法
US14/111,504 US9528181B2 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
KR1020137011164A KR101358345B1 (ko) 2011-04-22 2012-04-20 스퍼터링 타겟 및 그 제조방법
CN201280003518.XA CN103261473B (zh) 2011-04-22 2012-04-20 溅射靶及其制造方法
TW101114153A TWI438296B (zh) 2011-04-22 2012-04-20 Sputtering target and its manufacturing method
EP12774193.2A EP2700735B1 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
PCT/JP2012/061301 WO2012144655A1 (ja) 2011-04-22 2012-04-20 スパッタリングターゲット及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Publications (3)

Publication Number Publication Date
JP2012229454A JP2012229454A (ja) 2012-11-22
JP2012229454A5 true JP2012229454A5 (enExample) 2013-01-10
JP5153911B2 JP5153911B2 (ja) 2013-02-27

Family

ID=47041745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011096591A Expired - Fee Related JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Country Status (7)

Country Link
US (1) US9528181B2 (enExample)
EP (1) EP2700735B1 (enExample)
JP (1) JP5153911B2 (enExample)
KR (1) KR101358345B1 (enExample)
CN (1) CN103261473B (enExample)
TW (1) TWI438296B (enExample)
WO (1) WO2012144655A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822430B2 (en) 2012-02-29 2017-11-21 The United States Of America As Represented By The Secretary Of The Army High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same
JP6176535B2 (ja) * 2013-02-25 2017-08-09 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2015042622A1 (de) * 2013-09-27 2015-04-02 Plansee Se Kupfer-gallium sputtering target
CN108772567A (zh) * 2018-06-29 2018-11-09 米亚索乐装备集成(福建)有限公司 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1157652A (en) 1966-06-15 1969-07-09 Ass Elect Ind Hardened Copper-Bismuth Base Alloys
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP2002064062A (ja) * 2000-08-17 2002-02-28 Honda Motor Co Ltd 化合物半導体の成膜方法
JP4582457B2 (ja) 2003-07-15 2010-11-17 Jx日鉱日石金属株式会社 スパッタリングターゲット及び光記録媒体
CN101068947A (zh) * 2004-11-30 2007-11-07 日矿金属株式会社 Sb-Te系合金烧结体溅射靶
JP2006351142A (ja) * 2005-06-20 2006-12-28 Sony Corp 光記録媒体およびその製造方法ならびにスパッタリングターゲット
US9279178B2 (en) 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP5643524B2 (ja) * 2009-04-14 2014-12-17 株式会社コベルコ科研 Cu−Ga合金スパッタリングターゲットおよびその製造方法
JP2010280944A (ja) 2009-06-04 2010-12-16 Hitachi Cable Ltd Cu−Ga合金、スパッタリングターゲット、Cu−Ga合金の製造方法、スパッタリングターゲットの製造方法
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法

Similar Documents

Publication Publication Date Title
IN2012DN03820A (enExample)
JP2012229454A5 (enExample)
Feng et al. Structure and properties of multi-targets magnetron sputtered ZrNbTaTiW multi-elements alloy thin films
WO2011066375A3 (en) Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same
JP2010174373A5 (enExample)
WO2015004467A3 (en) Materials and methods for soldering, and soldered products
WO2010138636A3 (en) Synthesis of multinary chalcogenide nanoparticles comprising cu, zn, sn, s, and se
WO2012146653A3 (en) Heat-treatment of an alloy for a bearing component
MY168766A (en) Aluminum alloy substrate for magnetic storage disks and method for manufacturing the same
MY164370A (en) Fe-pt-based sputtering target with dispersed c grains
MY161115A (en) Aluminum alloy plate for magnetic disc substrate, method for manufacturing same, and method for manufacturing magnetic disc
WO2016012754A3 (en) Low temperature high reliability tin alloy for soldering
MY164145A (en) Aluminum alloy material for heat exchanger fin, manufacturing method for same, and heat exchanger using the said aluminum alloy material
JP2011231399A5 (ja) Cu−Ga合金粉末及びCu−Ga合金スパッタリングターゲット
MY161774A (en) Fe-pt-c based sputtering target
MY154119A (en) Method of bonding aluminum alloy materials to each other
WO2012087931A3 (en) Half-heusler alloys with enhanced figure of merit and methods of making
JP2012243876A5 (ja) パワー半導体素子用Al合金膜
MY157156A (en) Sputtering target of ferromagnetic material with low generation of particles
TW200732486A (en) Sputter target with high-melting phase
PH12014500217A1 (en) Molten zn-al alloy-plated steel sheet and manufacturing method thereof
MX2014002319A (es) Chapa de aleacion de cobre y metodo para fabricar chapa de aleacion de cobre.
JP2014531737A5 (enExample)
WO2012110788A3 (en) Method of refining metal alloys
JP2015127293A5 (enExample)