JP2012229454A5 - - Google Patents

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Publication number
JP2012229454A5
JP2012229454A5 JP2011096591A JP2011096591A JP2012229454A5 JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5 JP 2011096591 A JP2011096591 A JP 2011096591A JP 2011096591 A JP2011096591 A JP 2011096591A JP 2012229454 A5 JP2012229454 A5 JP 2012229454A5
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JP
Japan
Prior art keywords
sputtering target
alloy
contained
producing
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011096591A
Other languages
English (en)
Japanese (ja)
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JP2012229454A (ja
JP5153911B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2011096591A external-priority patent/JP5153911B2/ja
Priority to JP2011096591A priority Critical patent/JP5153911B2/ja
Priority to EP12774193.2A priority patent/EP2700735B1/en
Priority to US14/111,504 priority patent/US9528181B2/en
Priority to PCT/JP2012/061301 priority patent/WO2012144655A1/ja
Priority to KR1020137011164A priority patent/KR101358345B1/ko
Priority to CN201280003518.XA priority patent/CN103261473B/zh
Priority to TW101114153A priority patent/TWI438296B/zh
Publication of JP2012229454A publication Critical patent/JP2012229454A/ja
Publication of JP2012229454A5 publication Critical patent/JP2012229454A5/ja
Publication of JP5153911B2 publication Critical patent/JP5153911B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2011096591A 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法 Expired - Fee Related JP5153911B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法
KR1020137011164A KR101358345B1 (ko) 2011-04-22 2012-04-20 스퍼터링 타겟 및 그 제조방법
US14/111,504 US9528181B2 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
PCT/JP2012/061301 WO2012144655A1 (ja) 2011-04-22 2012-04-20 スパッタリングターゲット及びその製造方法
EP12774193.2A EP2700735B1 (en) 2011-04-22 2012-04-20 Sputtering target and method for producing same
CN201280003518.XA CN103261473B (zh) 2011-04-22 2012-04-20 溅射靶及其制造方法
TW101114153A TWI438296B (zh) 2011-04-22 2012-04-20 Sputtering target and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011096591A JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Publications (3)

Publication Number Publication Date
JP2012229454A JP2012229454A (ja) 2012-11-22
JP2012229454A5 true JP2012229454A5 (enExample) 2013-01-10
JP5153911B2 JP5153911B2 (ja) 2013-02-27

Family

ID=47041745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011096591A Expired - Fee Related JP5153911B2 (ja) 2011-04-22 2011-04-22 スパッタリングターゲット及びその製造方法

Country Status (7)

Country Link
US (1) US9528181B2 (enExample)
EP (1) EP2700735B1 (enExample)
JP (1) JP5153911B2 (enExample)
KR (1) KR101358345B1 (enExample)
CN (1) CN103261473B (enExample)
TW (1) TWI438296B (enExample)
WO (1) WO2012144655A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9822430B2 (en) * 2012-02-29 2017-11-21 The United States Of America As Represented By The Secretary Of The Army High-density thermodynamically stable nanostructured copper-based bulk metallic systems, and methods of making the same
JP6176535B2 (ja) * 2013-02-25 2017-08-09 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5594618B1 (ja) * 2013-02-25 2014-09-24 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP6651438B2 (ja) 2013-09-27 2020-02-19 プランゼー エスエー 銅−ガリウムスパッタリングターゲット
CN108772567A (zh) * 2018-06-29 2018-11-09 米亚索乐装备集成（福建）有限公司 一种用于cig靶材打底层的合金材料、cig靶材及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1157652A (en) * 1966-06-15 1969-07-09 Ass Elect Ind Hardened Copper-Bismuth Base Alloys
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP2002064062A (ja) * 2000-08-17 2002-02-28 Honda Motor Co Ltd 化合物半導体の成膜方法
JP4582457B2 (ja) 2003-07-15 2010-11-17 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット及び光記録媒体
KR20070073955A (ko) 2004-11-30 2007-07-10 닛코 킨조쿠 가부시키가이샤 Ｓｂ-Ｔｅ계 합금 소결체 스퍼터링 타겟
JP2006351142A (ja) * 2005-06-20 2006-12-28 Sony Corp 光記録媒体およびその製造方法ならびにスパッタリングターゲット
TWI432592B (zh) 2007-04-27 2014-04-01 Honeywell Int Inc 具有降低預燒時間之濺鍍靶，其製造方法及其用途
JP5192990B2 (ja) * 2008-11-11 2013-05-08 光洋應用材料科技股▲分▼有限公司 銅−ガリウム合金スパッタリングターゲット及びそのスパッタリングターゲットの製造方法並びに関連用途
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP5643524B2 (ja) * 2009-04-14 2014-12-17 株式会社コベルコ科研 Ｃｕ−Ｇａ合金スパッタリングターゲットおよびその製造方法
JP2010280944A (ja) 2009-06-04 2010-12-16 Hitachi Cable Ltd Ｃｕ−Ｇａ合金、スパッタリングターゲット、Ｃｕ−Ｇａ合金の製造方法、スパッタリングターゲットの製造方法
JP4793504B2 (ja) * 2009-11-06 2011-10-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法

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