JP2012212819A5 - - Google Patents

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Publication number
JP2012212819A5
JP2012212819A5 JP2011078481A JP2011078481A JP2012212819A5 JP 2012212819 A5 JP2012212819 A5 JP 2012212819A5 JP 2011078481 A JP2011078481 A JP 2011078481A JP 2011078481 A JP2011078481 A JP 2011078481A JP 2012212819 A5 JP2012212819 A5 JP 2012212819A5
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JP
Japan
Prior art keywords
distance
exhaust passage
processing chamber
processing
forming apparatus
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JP2011078481A
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English (en)
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JP2012212819A (ja
JP5595963B2 (ja
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Priority claimed from JP2011078481A external-priority patent/JP5595963B2/ja
Priority to JP2011078481A priority Critical patent/JP5595963B2/ja
Priority to KR1020120030451A priority patent/KR101474758B1/ko
Priority to TW101110840A priority patent/TWI540657B/zh
Priority to US13/432,599 priority patent/US20120247391A1/en
Priority to CN201210091746.9A priority patent/CN102732856B/zh
Publication of JP2012212819A publication Critical patent/JP2012212819A/ja
Publication of JP2012212819A5 publication Critical patent/JP2012212819A5/ja
Publication of JP5595963B2 publication Critical patent/JP5595963B2/ja
Application granted granted Critical
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Claims (1)

  1. 前記処理室内に、処理に使用されたガスが縦方向に流れる排気通路を有し、
    前記被処理体の縁から前記処理室の内壁面までの距離を、前記排気通路以外の部分では距離d1とし、前記排気通路の部分では距離d2としたとき、d1<d2に設定されていることを特徴とする請求項1に記載の縦型バッチ式成膜装置。
JP2011078481A 2011-03-31 2011-03-31 縦型バッチ式成膜装置 Active JP5595963B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011078481A JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置
KR1020120030451A KR101474758B1 (ko) 2011-03-31 2012-03-26 종형 배치식 성막 장치
TW101110840A TWI540657B (zh) 2011-03-31 2012-03-28 直立批次式薄膜形成設備
US13/432,599 US20120247391A1 (en) 2011-03-31 2012-03-28 Vertical batch-type film forming apparatus
CN201210091746.9A CN102732856B (zh) 2011-03-31 2012-03-30 立式分批式成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011078481A JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置

Publications (3)

Publication Number Publication Date
JP2012212819A JP2012212819A (ja) 2012-11-01
JP2012212819A5 true JP2012212819A5 (ja) 2013-10-31
JP5595963B2 JP5595963B2 (ja) 2014-09-24

Family

ID=46925559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011078481A Active JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置

Country Status (5)

Country Link
US (1) US20120247391A1 (ja)
JP (1) JP5595963B2 (ja)
KR (1) KR101474758B1 (ja)
CN (1) CN102732856B (ja)
TW (1) TWI540657B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103866294B (zh) * 2014-04-03 2017-01-11 江西沃格光电股份有限公司 镀膜充气装置
CN106467980B (zh) * 2015-08-21 2019-01-29 东莞市中镓半导体科技有限公司 一种大型垂直式hvpe反应室的装配辅助装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
KR102477770B1 (ko) * 2018-05-08 2022-12-14 삼성전자주식회사 막 형성 장치, 막 형성 방법 및 막 형성 장치를 이용한 반도체 장치의 제조 방법
CN114369813B (zh) * 2020-10-15 2023-05-26 长鑫存储技术有限公司 扩散炉
CN114606476A (zh) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 薄膜的炉管沉积方法
KR20220143222A (ko) 2021-04-15 2022-10-25 삼성전자주식회사 박막 증착 장치 및 박막 증착 방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189732U (ja) * 1987-12-07 1989-06-13
JPH05347257A (ja) * 1992-06-15 1993-12-27 Nec Yamaguchi Ltd 減圧気相成長装置
JPH065533A (ja) * 1992-06-18 1994-01-14 Nippon Steel Corp 熱処理炉
JPH06196428A (ja) * 1992-12-24 1994-07-15 Sanyo Electric Co Ltd 半導体基板の処理装置
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH08115883A (ja) * 1994-10-12 1996-05-07 Tokyo Electron Ltd 成膜装置
JP2000174007A (ja) * 1998-12-07 2000-06-23 Tokyo Electron Ltd 熱処理装置
EP1187188A4 (en) * 2000-02-18 2004-05-26 Tokyo Electron Ltd PROCESS FOR TREATING A WAFER
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
JP5198299B2 (ja) * 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP5284182B2 (ja) * 2008-07-23 2013-09-11 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5658463B2 (ja) * 2009-02-27 2015-01-28 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

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