KR101474758B1 - 종형 배치식 성막 장치 - Google Patents

종형 배치식 성막 장치 Download PDF

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Publication number
KR101474758B1
KR101474758B1 KR1020120030451A KR20120030451A KR101474758B1 KR 101474758 B1 KR101474758 B1 KR 101474758B1 KR 1020120030451 A KR1020120030451 A KR 1020120030451A KR 20120030451 A KR20120030451 A KR 20120030451A KR 101474758 B1 KR101474758 B1 KR 101474758B1
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KR
South Korea
Prior art keywords
film
gas
chamber
processed
treatment
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KR1020120030451A
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English (en)
Korean (ko)
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KR20120112082A (ko
Inventor
아츠시 엔도
마사키 구로카와
히로키 이리우다
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20120112082A publication Critical patent/KR20120112082A/ko
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Publication of KR101474758B1 publication Critical patent/KR101474758B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120030451A 2011-03-31 2012-03-26 종형 배치식 성막 장치 KR101474758B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-078481 2011-03-31
JP2011078481A JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置

Publications (2)

Publication Number Publication Date
KR20120112082A KR20120112082A (ko) 2012-10-11
KR101474758B1 true KR101474758B1 (ko) 2014-12-19

Family

ID=46925559

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120030451A KR101474758B1 (ko) 2011-03-31 2012-03-26 종형 배치식 성막 장치

Country Status (5)

Country Link
US (1) US20120247391A1 (ja)
JP (1) JP5595963B2 (ja)
KR (1) KR101474758B1 (ja)
CN (1) CN102732856B (ja)
TW (1) TWI540657B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103866294B (zh) * 2014-04-03 2017-01-11 江西沃格光电股份有限公司 镀膜充气装置
CN106467980B (zh) * 2015-08-21 2019-01-29 东莞市中镓半导体科技有限公司 一种大型垂直式hvpe反应室的装配辅助装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102477770B1 (ko) * 2018-05-08 2022-12-14 삼성전자주식회사 막 형성 장치, 막 형성 방법 및 막 형성 장치를 이용한 반도체 장치의 제조 방법
CN114369813B (zh) * 2020-10-15 2023-05-26 长鑫存储技术有限公司 扩散炉
CN114606476A (zh) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 薄膜的炉管沉积方法
KR20220143222A (ko) 2021-04-15 2022-10-25 삼성전자주식회사 박막 증착 장치 및 박막 증착 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174007A (ja) * 1998-12-07 2000-06-23 Tokyo Electron Ltd 熱処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189732U (ja) * 1987-12-07 1989-06-13
JPH05347257A (ja) * 1992-06-15 1993-12-27 Nec Yamaguchi Ltd 減圧気相成長装置
JPH065533A (ja) * 1992-06-18 1994-01-14 Nippon Steel Corp 熱処理炉
JPH06196428A (ja) * 1992-12-24 1994-07-15 Sanyo Electric Co Ltd 半導体基板の処理装置
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH08115883A (ja) * 1994-10-12 1996-05-07 Tokyo Electron Ltd 成膜装置
EP1187188A4 (en) * 2000-02-18 2004-05-26 Tokyo Electron Ltd PROCESS FOR TREATING A WAFER
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
JP5198299B2 (ja) * 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP5284182B2 (ja) * 2008-07-23 2013-09-11 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5658463B2 (ja) * 2009-02-27 2015-01-28 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174007A (ja) * 1998-12-07 2000-06-23 Tokyo Electron Ltd 熱処理装置

Also Published As

Publication number Publication date
JP5595963B2 (ja) 2014-09-24
CN102732856B (zh) 2015-04-29
TWI540657B (zh) 2016-07-01
JP2012212819A (ja) 2012-11-01
TW201250904A (en) 2012-12-16
US20120247391A1 (en) 2012-10-04
KR20120112082A (ko) 2012-10-11
CN102732856A (zh) 2012-10-17

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