JP2012209550A5 - - Google Patents
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- Publication number
- JP2012209550A5 JP2012209550A5 JP2012058401A JP2012058401A JP2012209550A5 JP 2012209550 A5 JP2012209550 A5 JP 2012209550A5 JP 2012058401 A JP2012058401 A JP 2012058401A JP 2012058401 A JP2012058401 A JP 2012058401A JP 2012209550 A5 JP2012209550 A5 JP 2012209550A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- condition
- microcrystalline semiconductor
- flow rate
- deposition gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 39
- 238000000151 deposition Methods 0.000 claims 14
- 239000007789 gas Substances 0.000 claims 13
- 230000008021 deposition Effects 0.000 claims 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 238000007865 diluting Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012058401A JP6006948B2 (ja) | 2011-03-17 | 2012-03-15 | 微結晶半導体膜、及び半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011058747 | 2011-03-17 | ||
| JP2011058747 | 2011-03-17 | ||
| JP2012058401A JP6006948B2 (ja) | 2011-03-17 | 2012-03-15 | 微結晶半導体膜、及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012209550A JP2012209550A (ja) | 2012-10-25 |
| JP2012209550A5 true JP2012209550A5 (https=) | 2015-02-19 |
| JP6006948B2 JP6006948B2 (ja) | 2016-10-12 |
Family
ID=47189009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012058401A Expired - Fee Related JP6006948B2 (ja) | 2011-03-17 | 2012-03-15 | 微結晶半導体膜、及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6006948B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9048099B2 (en) * | 2013-05-09 | 2015-06-02 | Applied Materials, Inc. | Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal |
| CN110431004A (zh) * | 2017-03-31 | 2019-11-08 | 富士胶片株式会社 | 阻气膜及成膜方法 |
| WO2021091835A1 (en) * | 2019-11-08 | 2021-05-14 | Applied Materials, Inc. | Methods to reduce material surface roughness |
| US11710631B2 (en) * | 2020-10-23 | 2023-07-25 | Applied Materials, Inc. | Tensile nitride deposition systems and methods |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04266019A (ja) * | 1991-02-20 | 1992-09-22 | Canon Inc | 成膜方法 |
| FR2719416B1 (fr) * | 1994-04-29 | 1996-07-05 | Thomson Lcd | Procédé de passivation des flancs d'un composant semiconducteur à couches minces. |
| US8076222B2 (en) * | 2008-02-11 | 2011-12-13 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| US7833885B2 (en) * | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
| WO2009157531A1 (ja) * | 2008-06-27 | 2009-12-30 | 株式会社日立製作所 | 半導体装置とその製造方法、及びこの半導体装置を用いた表示装置 |
| JP5498762B2 (ja) * | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| US7989325B2 (en) * | 2009-01-13 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor |
| US8557687B2 (en) * | 2009-07-23 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming microcrystalline semiconductor film and method for manufacturing thin film transistor |
-
2012
- 2012-03-15 JP JP2012058401A patent/JP6006948B2/ja not_active Expired - Fee Related
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