JP6006948B2 - 微結晶半導体膜、及び半導体装置の作製方法 - Google Patents

微結晶半導体膜、及び半導体装置の作製方法 Download PDF

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Publication number
JP6006948B2
JP6006948B2 JP2012058401A JP2012058401A JP6006948B2 JP 6006948 B2 JP6006948 B2 JP 6006948B2 JP 2012058401 A JP2012058401 A JP 2012058401A JP 2012058401 A JP2012058401 A JP 2012058401A JP 6006948 B2 JP6006948 B2 JP 6006948B2
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semiconductor film
microcrystalline semiconductor
film
flow rate
microcrystalline
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JP2012209550A (ja
JP2012209550A5 (https=
Inventor
亮太 田島
亮太 田島
哲弘 田中
哲弘 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thin Film Transistor (AREA)
JP2012058401A 2011-03-17 2012-03-15 微結晶半導体膜、及び半導体装置の作製方法 Expired - Fee Related JP6006948B2 (ja)

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JP2012058401A JP6006948B2 (ja) 2011-03-17 2012-03-15 微結晶半導体膜、及び半導体装置の作製方法

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JP2011058747 2011-03-17
JP2011058747 2011-03-17
JP2012058401A JP6006948B2 (ja) 2011-03-17 2012-03-15 微結晶半導体膜、及び半導体装置の作製方法

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JP2012209550A JP2012209550A (ja) 2012-10-25
JP2012209550A5 JP2012209550A5 (https=) 2015-02-19
JP6006948B2 true JP6006948B2 (ja) 2016-10-12

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048099B2 (en) * 2013-05-09 2015-06-02 Applied Materials, Inc. Multi-layer amorphous silicon structure with improved poly-silicon quality after excimer laser anneal
CN110431004A (zh) * 2017-03-31 2019-11-08 富士胶片株式会社 阻气膜及成膜方法
WO2021091835A1 (en) * 2019-11-08 2021-05-14 Applied Materials, Inc. Methods to reduce material surface roughness
US11710631B2 (en) * 2020-10-23 2023-07-25 Applied Materials, Inc. Tensile nitride deposition systems and methods

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04266019A (ja) * 1991-02-20 1992-09-22 Canon Inc 成膜方法
FR2719416B1 (fr) * 1994-04-29 1996-07-05 Thomson Lcd Procédé de passivation des flancs d'un composant semiconducteur à couches minces.
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US7833885B2 (en) * 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
WO2009157531A1 (ja) * 2008-06-27 2009-12-30 株式会社日立製作所 半導体装置とその製造方法、及びこの半導体装置を用いた表示装置
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7989325B2 (en) * 2009-01-13 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing crystalline semiconductor film and method for manufacturing thin film transistor
US8557687B2 (en) * 2009-07-23 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing thin film transistor

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