JP2012195383A - バリヤー膜の形成方法及びｉｃチップパッケージ - Google Patents

バリヤー膜の形成方法及びｉｃチップパッケージ Download PDF

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Publication number
JP2012195383A
JP2012195383A JP2011057054A JP2011057054A JP2012195383A JP 2012195383 A JP2012195383 A JP 2012195383A JP 2011057054 A JP2011057054 A JP 2011057054A JP 2011057054 A JP2011057054 A JP 2011057054A JP 2012195383 A JP2012195383 A JP 2012195383A
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JP
Japan
Prior art keywords
barrier film
hole
film
forming
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011057054A
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English (en)
Japanese (ja)
Inventor
Michio Ishikawa
道夫 石川
Satoshi Toyoda
聡 豊田
Masanobu Hatanaka
正信 畠中
Hirohiko Murakami
村上　　裕彦
Hagane Irikura
鋼 入倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2011057054A priority Critical patent/JP2012195383A/ja
Priority to TW101107648A priority patent/TWI512931B/zh
Priority to KR1020120026038A priority patent/KR101353088B1/ko
Publication of JP2012195383A publication Critical patent/JP2012195383A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2011057054A 2011-03-15 2011-03-15 バリヤー膜の形成方法及びｉｃチップパッケージ Pending JP2012195383A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011057054A JP2012195383A (ja) 2011-03-15 2011-03-15 バリヤー膜の形成方法及びｉｃチップパッケージ
TW101107648A TWI512931B (zh) 2011-03-15 2012-03-07 Barrier film formation method and IC chip package
KR1020120026038A KR101353088B1 (ko) 2011-03-15 2012-03-14 배리어막의 형성 방법 및 ｉｃ 칩 패키지

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011057054A JP2012195383A (ja) 2011-03-15 2011-03-15 バリヤー膜の形成方法及びｉｃチップパッケージ

Publications (1)

Publication Number Publication Date
JP2012195383A true JP2012195383A (ja) 2012-10-11

Family

ID=47087025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011057054A Pending JP2012195383A (ja) 2011-03-15 2011-03-15 バリヤー膜の形成方法及びｉｃチップパッケージ

Country Status (3)

Country Link
JP (1) JP2012195383A (ko)
KR (1) KR101353088B1 (ko)
TW (1) TWI512931B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015032591A (ja) * 2013-07-31 2015-02-16 株式会社アルバック 配線構造及びその形成方法
WO2015147785A1 (en) * 2014-03-24 2015-10-01 Intel Corporation Through-body via formation techniques
JP2017152603A (ja) * 2016-02-26 2017-08-31 三菱電機株式会社 パワー半導体モジュール及びその製造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11283974A (ja) * 1998-03-27 1999-10-15 Ulvac Corp 低比誘電性高分子膜及びその形成方法並びに層間絶縁膜
JP2000003910A (ja) * 1998-06-16 2000-01-07 Ulvac Corp 低比誘電性絶縁膜の形成方法及び層間絶縁膜
JP2001011176A (ja) * 1999-06-25 2001-01-16 Matsushita Electric Works Ltd ポリイミド皮膜の形成方法及びポリイミド皮膜
JP2002275246A (ja) * 2001-03-21 2002-09-25 Toray Ind Inc エポキシ系樹脂組成物および半導体装置
JP2006012895A (ja) * 2004-06-22 2006-01-12 Canon Inc 半導体装置及び半導体装置の製造方法
JP2006231134A (ja) * 2005-02-22 2006-09-07 Ulvac Japan Ltd 有機材料膜の形成方法
JP2011032357A (ja) * 2009-07-31 2011-02-17 Ube Industries Ltd ポリイミドフィルムおよびポリイミドフィルムの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006141821A (ja) * 2004-11-22 2006-06-08 Ulvac Japan Ltd 防食方法
KR20060076856A (ko) * 2004-12-29 2006-07-05 매그나칩 반도체 유한회사 반도체 소자의 금속 배선 형성 방법
KR101229180B1 (ko) * 2008-02-18 2013-02-01 코오롱인더스트리 주식회사 폴리이미드 필름
KR20100021856A (ko) * 2008-08-18 2010-02-26 삼성전자주식회사 관통 전극을 갖는 반도체장치의 형성방법 및 관련된 장치

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11283974A (ja) * 1998-03-27 1999-10-15 Ulvac Corp 低比誘電性高分子膜及びその形成方法並びに層間絶縁膜
JP2000003910A (ja) * 1998-06-16 2000-01-07 Ulvac Corp 低比誘電性絶縁膜の形成方法及び層間絶縁膜
JP2001011176A (ja) * 1999-06-25 2001-01-16 Matsushita Electric Works Ltd ポリイミド皮膜の形成方法及びポリイミド皮膜
JP2002275246A (ja) * 2001-03-21 2002-09-25 Toray Ind Inc エポキシ系樹脂組成物および半導体装置
JP2006012895A (ja) * 2004-06-22 2006-01-12 Canon Inc 半導体装置及び半導体装置の製造方法
JP2006231134A (ja) * 2005-02-22 2006-09-07 Ulvac Japan Ltd 有機材料膜の形成方法
JP2011032357A (ja) * 2009-07-31 2011-02-17 Ube Industries Ltd ポリイミドフィルムおよびポリイミドフィルムの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015032591A (ja) * 2013-07-31 2015-02-16 株式会社アルバック 配線構造及びその形成方法
WO2015147785A1 (en) * 2014-03-24 2015-10-01 Intel Corporation Through-body via formation techniques
EP3123499A4 (en) * 2014-03-24 2017-11-22 Intel Corporation Through-body via formation techniques
US9852964B2 (en) 2014-03-24 2017-12-26 Intel Corporation Through-body via formation techniques
JP2017152603A (ja) * 2016-02-26 2017-08-31 三菱電機株式会社 パワー半導体モジュール及びその製造方法

Also Published As

Publication number Publication date
KR101353088B1 (ko) 2014-01-17
TWI512931B (zh) 2015-12-11
KR20120105373A (ko) 2012-09-25
TW201304108A (zh) 2013-01-16

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