JP2012149252A5 - - Google Patents
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- Publication number
- JP2012149252A5 JP2012149252A5 JP2012000210A JP2012000210A JP2012149252A5 JP 2012149252 A5 JP2012149252 A5 JP 2012149252A5 JP 2012000210 A JP2012000210 A JP 2012000210A JP 2012000210 A JP2012000210 A JP 2012000210A JP 2012149252 A5 JP2012149252 A5 JP 2012149252A5
- Authority
- JP
- Japan
- Prior art keywords
- unit
- polymer
- alkyl
- photoresist composition
- organic group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000178 monomer Substances 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 150000002148 esters Chemical class 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- WGPZTLIWMRFXSI-UHFFFAOYSA-N 2-(1-ethoxyethoxy)ethyl 2-methylprop-2-enoate Chemical compound CCOC(C)OCCOC(=O)C(C)=C WGPZTLIWMRFXSI-UHFFFAOYSA-N 0.000 claims description 2
- LNUJGAPHYUEEIB-UHFFFAOYSA-N 2-(ethoxymethoxy)ethyl 2-methylprop-2-enoate Chemical compound CCOCOCCOC(=O)C(C)=C LNUJGAPHYUEEIB-UHFFFAOYSA-N 0.000 claims description 2
- PDTDJRYFNGKLHD-UHFFFAOYSA-N 2-(methoxymethoxy)ethyl 2-methylprop-2-enoate Chemical compound COCOCCOC(=O)C(C)=C PDTDJRYFNGKLHD-UHFFFAOYSA-N 0.000 claims description 2
- GPRXTZUZMOYERY-UHFFFAOYSA-N 2-ethenyl-6-(ethoxymethoxy)naphthalene Chemical compound C1=C(C=C)C=CC2=CC(OCOCC)=CC=C21 GPRXTZUZMOYERY-UHFFFAOYSA-N 0.000 claims description 2
- AEXWRSPXHREQHM-UHFFFAOYSA-N 2-ethenyl-6-(methoxymethoxy)naphthalene Chemical compound C1=C(C=C)C=CC2=CC(OCOC)=CC=C21 AEXWRSPXHREQHM-UHFFFAOYSA-N 0.000 claims description 2
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
- 125000004185 ester group Chemical group 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 13
- 125000000962 organic group Chemical group 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 5
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 150000001721 carbon Chemical group 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- ZHUXMBYIONRQQX-UHFFFAOYSA-N hydroxidodioxidocarbon(.) Chemical group [O]C(O)=O ZHUXMBYIONRQQX-UHFFFAOYSA-N 0.000 claims 2
- 125000000686 lactone group Chemical group 0.000 claims 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 1
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- AQYSYJUIMQTRMV-UHFFFAOYSA-N hypofluorous acid Chemical group FO AQYSYJUIMQTRMV-UHFFFAOYSA-N 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 239000005076 polymer ester Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- -1 5-oxo-4-oxa-tricyclo [4.2.1.03,7] non-2-yloxycarbonylmethyl ester Chemical class 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- JNIUFMXERFGMTC-UHFFFAOYSA-N oxolan-3-yl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCOC1 JNIUFMXERFGMTC-UHFFFAOYSA-N 0.000 description 2
- QSUJHKWXLIQKEY-UHFFFAOYSA-N (2-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1CCOC1=O QSUJHKWXLIQKEY-UHFFFAOYSA-N 0.000 description 1
- OOIBFPKQHULHSQ-UHFFFAOYSA-N (3-hydroxy-1-adamantyl) 2-methylprop-2-enoate Chemical compound C1C(C2)CC3CC2(O)CC1(OC(=O)C(=C)C)C3 OOIBFPKQHULHSQ-UHFFFAOYSA-N 0.000 description 1
- CVOFUHUIXVFPCH-UHFFFAOYSA-N (3-oxo-4,10-dioxatricyclo[5.2.1.02,6]decan-8-yl) 2-methylprop-2-enoate Chemical compound C12COC(=O)C2C2CC(OC(=O)C(=C)C)C1O2 CVOFUHUIXVFPCH-UHFFFAOYSA-N 0.000 description 1
- CUONHNINZJRNLP-UHFFFAOYSA-N (3-oxo-4-oxatricyclo[5.2.1.02,6]decan-8-yl) 2-methylprop-2-enoate Chemical compound C12COC(=O)C2C2CC(OC(=O)C(=C)C)C1C2 CUONHNINZJRNLP-UHFFFAOYSA-N 0.000 description 1
- JJMQLQLMPJLIPZ-UHFFFAOYSA-N (5-oxo-4-oxatricyclo[4.2.1.03,7]nonan-2-yl) 2-methylprop-2-enoate Chemical group O1C(=O)C2CC3C(OC(=O)C(=C)C)C1C2C3 JJMQLQLMPJLIPZ-UHFFFAOYSA-N 0.000 description 1
- ZROFAXCQYPKWCY-UHFFFAOYSA-N (5-oxooxolan-3-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC1COC(=O)C1 ZROFAXCQYPKWCY-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIQLOLNJWXWZHX-UHFFFAOYSA-N 2-(5-bicyclo[2.2.1]hept-2-enylmethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound C1C2C(CC(O)(C(F)(F)F)C(F)(F)F)CC1C=C2 NIQLOLNJWXWZHX-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XNECRJLMCBHYOM-UHFFFAOYSA-N 2-ethenyl-6-(1-ethoxyethoxy)naphthalene Chemical compound C1=C(C=C)C=CC2=CC(OC(C)OCC)=CC=C21 XNECRJLMCBHYOM-UHFFFAOYSA-N 0.000 description 1
- XVZWMPLMWUJTCE-UHFFFAOYSA-N 6-ethenylnaphthalen-2-ol Chemical compound C1=C(C=C)C=CC2=CC(O)=CC=C21 XVZWMPLMWUJTCE-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201061429111P | 2010-12-31 | 2010-12-31 | |
| US61/429,111 | 2010-12-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012149252A JP2012149252A (ja) | 2012-08-09 |
| JP2012149252A5 true JP2012149252A5 (OSRAM) | 2016-12-22 |
| JP6080357B2 JP6080357B2 (ja) | 2017-02-15 |
Family
ID=45491287
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012000210A Expired - Fee Related JP6080357B2 (ja) | 2010-12-31 | 2012-01-04 | ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8614050B2 (OSRAM) |
| EP (1) | EP2472326A1 (OSRAM) |
| JP (1) | JP6080357B2 (OSRAM) |
| KR (1) | KR101805617B1 (OSRAM) |
| CN (1) | CN102617789B (OSRAM) |
| IL (1) | IL217244A0 (OSRAM) |
| TW (1) | TWI437011B (OSRAM) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3734228B2 (ja) * | 1995-07-14 | 2006-01-11 | パイオニア株式会社 | 光記録媒体及びその製造方法 |
| JP5947028B2 (ja) * | 2010-12-02 | 2016-07-06 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | ポリマー、フォトレジスト組成物、およびフォトリソグラフィパターンを形成する方法 |
| EP2492749A1 (en) * | 2011-02-28 | 2012-08-29 | Rohm and Haas Electronic Materials LLC | Photoresist compositions and methods of forming photolithographic patterns |
| JP5277291B2 (ja) * | 2011-06-29 | 2013-08-28 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法 |
| JP5298222B2 (ja) * | 2011-07-28 | 2013-09-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法 |
| JP2013225094A (ja) * | 2011-10-07 | 2013-10-31 | Jsr Corp | フォトレジスト組成物及びレジストパターン形成方法 |
| JP5923423B2 (ja) * | 2011-10-13 | 2016-05-24 | 住友化学株式会社 | 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法 |
| JP5682542B2 (ja) * | 2011-11-17 | 2015-03-11 | 信越化学工業株式会社 | ネガ型パターン形成方法 |
| JP6224986B2 (ja) * | 2012-11-09 | 2017-11-01 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6065862B2 (ja) * | 2013-04-10 | 2017-01-25 | 信越化学工業株式会社 | パターン形成方法、レジスト組成物、高分子化合物及び単量体 |
| CN104516138B (zh) * | 2013-09-29 | 2017-09-22 | 中芯国际集成电路制造(上海)有限公司 | 硅基液晶面板的制作方法 |
| JP6252154B2 (ja) * | 2013-12-13 | 2017-12-27 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
| JP6210052B2 (ja) * | 2013-12-26 | 2017-10-11 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| US10941311B2 (en) * | 2016-04-28 | 2021-03-09 | Nof Corporation | Polyoxyethylene compound having multiple hydroxyl groups at end, and contact lens |
| JP6999351B2 (ja) * | 2017-10-05 | 2022-01-18 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物 |
| US11829068B2 (en) | 2020-10-19 | 2023-11-28 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition, method of forming resist pattern, compound, and resin |
| CN112679461A (zh) * | 2020-12-23 | 2021-04-20 | 上海博栋化学科技有限公司 | 一种增加溶解差的光刻胶树脂单体及其合成方法 |
| CN112625022A (zh) * | 2020-12-23 | 2021-04-09 | 上海博栋化学科技有限公司 | 一种光刻胶树脂单体及其合成方法 |
| CN113620921A (zh) * | 2021-06-22 | 2021-11-09 | 徐州博康信息化学品有限公司 | 一种光刻胶酸敏树脂单体及其合成方法和应用 |
| WO2024248931A1 (en) * | 2023-06-01 | 2024-12-05 | The Regents Of The University Of California | Photothermal patterning of polymers |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5865411A (ja) * | 1981-10-15 | 1983-04-19 | Toyo Contact Lens Co Ltd | コンタクトレンズの製造法 |
| JPS57181524A (en) * | 1981-05-01 | 1982-11-09 | Toyo Contact Lens Co Ltd | Contact lens and its manufacture |
| AU550604B2 (en) * | 1981-05-01 | 1986-03-27 | Menicon Co., Ltd | Water absorptive contact lens |
| US5214452A (en) | 1988-12-19 | 1993-05-25 | Ciba-Geigy Corporation | Hydrogels based on fluorine-containing and saccharide monomers |
| CA2028112A1 (en) * | 1989-03-28 | 1990-09-29 | Norbert Klaus | Hydrogels based on sugar alcohol monomers |
| JP2715881B2 (ja) | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
| JPH0950126A (ja) * | 1995-08-08 | 1997-02-18 | Fujitsu Ltd | レジスト組成物及びレジストパターン形成方法 |
| WO1997033198A1 (en) | 1996-03-07 | 1997-09-12 | The B.F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
| TWI234567B (en) * | 1998-11-27 | 2005-06-21 | Hyundai Electronics Ind | Cross-linker for photoresist, and photoresist composition comprising the same |
| TWI291953B (OSRAM) * | 2001-10-23 | 2008-01-01 | Mitsubishi Rayon Co | |
| DE10308504A1 (de) | 2003-02-26 | 2004-09-09 | Basf Ag | Enzymatische Herstellung von (Meth)acrylsäureestern |
| KR20060066932A (ko) | 2004-12-14 | 2006-06-19 | 주식회사 하이닉스반도체 | 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물 |
| JP5011018B2 (ja) | 2007-04-13 | 2012-08-29 | 富士フイルム株式会社 | パターン形成方法 |
| US8034547B2 (en) | 2007-04-13 | 2011-10-11 | Fujifilm Corporation | Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method |
| KR20090059650A (ko) * | 2007-12-07 | 2009-06-11 | 삼성전자주식회사 | 이머전 리소그래피용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴의 형성 방법 |
| WO2011083872A1 (en) | 2010-01-08 | 2011-07-14 | Fujifilm Corporation | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film |
| JP5775701B2 (ja) | 2010-02-26 | 2015-09-09 | 富士フイルム株式会社 | パターン形成方法及びレジスト組成物 |
| EP2472324A1 (en) * | 2010-12-31 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns |
-
2011
- 2011-12-23 EP EP11195241A patent/EP2472326A1/en not_active Withdrawn
- 2011-12-28 IL IL217244A patent/IL217244A0/en unknown
- 2011-12-29 TW TW100149502A patent/TWI437011B/zh not_active IP Right Cessation
- 2011-12-31 CN CN201110463256.2A patent/CN102617789B/zh not_active Expired - Fee Related
- 2011-12-31 US US13/341,935 patent/US8614050B2/en not_active Expired - Fee Related
-
2012
- 2012-01-02 KR KR1020120000205A patent/KR101805617B1/ko not_active Expired - Fee Related
- 2012-01-04 JP JP2012000210A patent/JP6080357B2/ja not_active Expired - Fee Related
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