JP2012142540A - 発光ダイオードパッケージ構造およびその製造方法 - Google Patents
発光ダイオードパッケージ構造およびその製造方法 Download PDFInfo
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- JP2012142540A JP2012142540A JP2011097551A JP2011097551A JP2012142540A JP 2012142540 A JP2012142540 A JP 2012142540A JP 2011097551 A JP2011097551 A JP 2011097551A JP 2011097551 A JP2011097551 A JP 2011097551A JP 2012142540 A JP2012142540 A JP 2012142540A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000010410 layer Substances 0.000 claims abstract description 57
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000002335 surface treatment layer Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000005034 decoration Methods 0.000 claims abstract description 21
- 239000003566 sealing material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000741 silica gel Substances 0.000 claims description 10
- 229910002027 silica gel Inorganic materials 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000000605 extraction Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 34
- 238000000576 coating method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Abstract
【解決手段】 発光ダイオードパッケージ構造は、基板と、少なくとも一つの発光ダイオードダイと、レンズと、型内装飾(In-Mold Decoration;IMD)膜とを含む。発光ダイオードダイは、基板上に固定されている。レンズは、基板から突出するように設けられ、かつ、発光ダイオードダイを覆う。型内装飾膜は、レンズに付着している。また、型内装飾膜は、レンズの上に位置されている蛍光体層と、蛍光体層の上に位置されている表面処理層とを含む。
【選択図】 図4G
Description
本発明の一つの実施例では、表面処理層は、シリカゲル層、エポキシ樹脂層、またはそれ以外の水気及び酸素を遮断可能な透明材料である。
本発明の一つの実施例において、透明封止材料は、エポキシ樹脂またはシリカゲルである。
以下、本発明の上述した目的又は他の目的、特徴及び効果を理解してもらうため、好ましい実施例と図面を挙げて、詳細に説明する。
41 治具
400 発光ダイオードパッケージ構造
401 蛍光体層
402 透明封止材料
403 発光ダイオードダイ
404 基板
405 粘着層
406 表面処理層
407 剥離膜
408 支持層
409 金型
410 レンズ
411 凹室
Claims (10)
- 基板と、
該基板上に固定されている少なくとも一つの発光ダイオードダイと、
該基板から突出するように設けられ、該発光ダイオードダイを覆うレンズと、
該レンズに付着する型内装飾(In-Mold Decoration;IMD)膜と、を含み、
該型内装飾膜は、該レンズの上に位置されている蛍光体層と、該蛍光体層の上に位置されている表面処理層とを含むことを特徴とする発光ダイオードパッケージ構造。 - 該レンズは、透明封止材料からなることを特徴とする請求項1に記載の発光ダイオードパッケージ構造。
- 該透明封止材料は、エポキシ樹脂またはシリカゲルを固めることにより形成されることを特徴とする請求項2に記載の発光ダイオードパッケージ構造。
- 該レンズは、表面が円弧形であることを特徴とする請求項1に記載の発光ダイオードパッケージ構造。
- 該表面処理層は、シリカゲル層またはエポキシ樹脂層であることを特徴とする請求項1に記載の発光ダイオードパッケージ構造。
- 少なくとも一つの発光ダイオードダイが固定されている基板を提供する工程と、
蛍光体層と該蛍光体層の上に位置されている表面処理層とを含む型内装飾膜を提供する工程と、
該型内装飾膜を変形させることにより、該表面処理層を外壁とする少なくとも一つの凹室を形成する工程と、
透明封止材料を該凹室に充填する工程と、
該基板と該型内装飾膜とを結合させることにより、該発光ダイオードダイが該凹室の中に位置されると共に該透明封止材料により覆われるようにする工程と、
該透明封止材料を固めることにより、レンズを形成する工程と、を含む発光ダイオードパッケージ構造の製造方法。 - 該型内装飾膜は、支持層と、該支持層の上に位置されている剥離膜と、該剥離膜の上に位置されている表面処理層と、該表面処理層の上に位置されている蛍光体層とを含むことを特徴とする請求項6に記載の発光ダイオードパッケージ構造の製造方法。
- 該型内装飾膜は、該蛍光体層の上に位置されている粘着層をさらに含むことを特徴とする請求項7に記載の発光ダイオードパッケージ構造の製造方法。
- 該レンズを形成してから、該剥離膜を剥離させることにより、該支持層と、該レンズに付着している該表面処理層および該蛍光体層とを分離させる工程をさらに含むことを特徴とする請求項7に記載の発光ダイオードパッケージ構造の製造方法。
- 該透明封止材料は、エポキシ樹脂またはシリカゲルであることを特徴とする請求項6に記載の発光ダイオードパッケージ構造の製造方法。
Applications Claiming Priority (2)
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TW099147331 | 2010-12-31 | ||
TW099147331A TWI441361B (zh) | 2010-12-31 | 2010-12-31 | 發光二極體封裝結構及其製造方法 |
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JP2012142540A true JP2012142540A (ja) | 2012-07-26 |
JP5422599B2 JP5422599B2 (ja) | 2014-02-19 |
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US (2) | US20120168795A1 (ja) |
EP (1) | EP2472610B1 (ja) |
JP (1) | JP5422599B2 (ja) |
KR (1) | KR101318318B1 (ja) |
CN (2) | CN102569612B (ja) |
TW (1) | TWI441361B (ja) |
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JP2017501578A (ja) * | 2013-12-18 | 2017-01-12 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | Led蛍光体パッケージ用の反射性はんだマスク層 |
US11189601B2 (en) | 2013-12-18 | 2021-11-30 | Lumileds Llc | Reflective solder mask layer for LED phosphor package |
Also Published As
Publication number | Publication date |
---|---|
CN102569612A (zh) | 2012-07-11 |
TW201228045A (en) | 2012-07-01 |
CN104600178B (zh) | 2018-06-05 |
TWI441361B (zh) | 2014-06-11 |
US20120168795A1 (en) | 2012-07-05 |
CN102569612B (zh) | 2015-01-14 |
CN104600178A (zh) | 2015-05-06 |
EP2472610A2 (en) | 2012-07-04 |
KR101318318B1 (ko) | 2013-10-15 |
EP2472610B1 (en) | 2018-02-14 |
EP2472610A3 (en) | 2013-12-04 |
US20160233394A1 (en) | 2016-08-11 |
KR20120078561A (ko) | 2012-07-10 |
JP5422599B2 (ja) | 2014-02-19 |
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