TWM324287U - Light-emitting semiconductor device package structure - Google Patents

Light-emitting semiconductor device package structure Download PDF

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Publication number
TWM324287U
TWM324287U TW096211501U TW96211501U TWM324287U TW M324287 U TWM324287 U TW M324287U TW 096211501 U TW096211501 U TW 096211501U TW 96211501 U TW96211501 U TW 96211501U TW M324287 U TWM324287 U TW M324287U
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TW
Taiwan
Prior art keywords
light
emitting semiconductor
semiconductor device
device package
phosphor powder
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TW096211501U
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Chinese (zh)
Inventor
Yi-Tsuo Wu
Shih-Jen Chuang
Chia-Hsien Chang
Tai-Wei Chou
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Everlight Electronics Co Ltd
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Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW096211501U priority Critical patent/TWM324287U/en
Publication of TWM324287U publication Critical patent/TWM324287U/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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Description

M324287 八、新型說明: 【新型所屬之技術領域】 本新型是有關於一種發光半導體元件封裝結構,且特 別是有關於一種可精密控制螢光粉膠體外型與尺寸之無 脫模設計的發光半導體元件封裝結構。 【先前技術】 現今的發光二極體(light_emitting diode; LED)工業 中’螢光粉被廣泛應用於白光、暖色光及粉色系發光半 導體元件封裝技術。 以白光發光二極體為例,傳統上係將螢光粉與膠體混 合而成之螢光粉膠體,利用點膠設備滴於發光半導體元 件上’藉由藍光發光二極體發射出的藍光激發黃色螢光 粉產生黃光,再與部分藍光混合而產生出白光。傳統之 發光半導體元件封裝結構係將發光半導體元件固定於一 基底之上’並將螢光粉膠體直接滴在此發光半導體元件 上。由於螢光粉膠體具流動性,其尚未固化之前受重力 影響’則螢光粉膠體向會四周流動,最後導致螢光粉膠 體之頂面厚度較側面為薄,大部分的螢光粉膠體沈澱於 發光半導體元件之邊緣,以致於通過頂面與側面的光線 路長短不一而產生不同強度的光線,使藍光與黃光混 β不均勻’導致色溫(color temperature)不均而無法發揮 應有之發光效率。 目月il較先進之作法則是在發光半導體元件周圍放置 5 M324287 精密的螢光粉膠體固定結構,使螢光粉能依照設計均勻 鋪設於發光半導體元件周圍的適當位置,藉此提高發光 效率。然而,此一作法尚需將螢光粉膠體固定結構去除, 因而增加了製程複雜度及製造成本。 此外’尚有利用一預先成型具有凹穴之聚光鏡,於凹 穴中滴入螢光粉膠體後,再將已固定於基底上之發光半 導體元件與此含有螢光粉膠體之聚光鏡凹穴接合,並擠 壓出多餘的螢光粉膠體,即可依照聚光鏡凹穴之設計來 控制此螢光粉膠體的尺寸及形狀。然而,此設計之發光 半導體元件與具有凹六之聚光鏡需精密接合,除增加製 程之困難度外,於螢光粉膠體與發光半導體元件元件之 間甚容易產生間隙,以致影響光取出效率。 因此,需要一種可降低製程複雜度及製造成本,並能 提南發光半導體元件發光效率的發光半導體元件封裝結 構。M324287 VIII. New Description: [New Technology Field] The present invention relates to a light-emitting semiconductor device package structure, and in particular to a light-emitting semiconductor capable of precisely controlling the outer shape and size of the phosphor powder. Component package structure. [Prior Art] In today's light-emitting diode (LED) industry, 'fluorescent powder is widely used in white light, warm color light and pink light-emitting semiconductor element packaging technology. Taking a white light-emitting diode as an example, a phosphor powder colloid which is a mixture of a phosphor powder and a colloid is conventionally used, and a dispensing device is used to drop on a light-emitting semiconductor element 'excited by blue light emitted from a blue light-emitting diode. The yellow phosphor produces yellow light, which is then mixed with some of the blue light to produce white light. A conventional light-emitting semiconductor device package structure fixes a light-emitting semiconductor element on a substrate and directly drops a phosphor powder colloid on the light-emitting semiconductor element. Since the phosphor powder colloid has fluidity, it is affected by gravity before it is cured. 'The phosphor powder colloid flows around, and finally the top surface of the phosphor powder colloid is thinner than the side, and most of the phosphor powder colloid precipitates. At the edge of the light-emitting semiconductor component, the light intensity of the top surface and the side surface is different, and light of different intensity is generated, so that the blue light and the yellow light are mixed with β unevenness, resulting in uneven color temperature and being unable to function. Luminous efficiency. The more advanced method is to place a 5 M324287 precision phosphor colloid fixing structure around the light-emitting semiconductor component, so that the phosphor powder can be uniformly placed around the light-emitting semiconductor component according to the design, thereby improving the luminous efficiency. However, in this method, the phosphor powder colloidal structure needs to be removed, thereby increasing process complexity and manufacturing cost. In addition, a concentrating mirror having a recessed hole is formed, and after the phosphor powder colloid is dropped into the recess, the light-emitting semiconductor element fixed on the substrate is bonded to the condensing lens pocket containing the phosphor powder colloid. And extruding the excess phosphor powder colloid, the size and shape of the phosphor powder colloid can be controlled according to the design of the condenser pocket. However, the light-emitting semiconductor element of this design and the concentrating mirror having the concave six need to be precisely bonded. In addition to the difficulty of increasing the process, a gap is easily generated between the phosphor powder colloid and the light-emitting semiconductor element, so that the light extraction efficiency is affected. Therefore, there is a need for a light emitting semiconductor device package structure which can reduce process complexity and manufacturing cost, and can improve the light emitting efficiency of a south light emitting semiconductor device.

【新型内容】 因此,本新型一方面就是在提供一種發光半導體元件 封裝結構,解決傳統發光半導體元件封裝結構容易導致色 溫不均的問題。 本新型的另一方面就是在提供一種無脫模式發光半 導體疋件封裝結構,避免傳統之脫模製程所增加的製程複 雜度及製造成本。 本新型的又一方面就是在提供一種發光半導體元件 6 M324287 封裝…構’用以改善傳統封裝結構勞光粉膠體無法與發光 半導體元件形狀精確配合,而造成光取出效率不佳、色度 不均及亮度不均等的問題。[New content] Therefore, in one aspect of the present invention, a light emitting semiconductor device package structure is provided, which solves the problem that the conventional light emitting semiconductor device package structure is liable to cause color temperature unevenness. Another aspect of the present invention is to provide a turn-free mode light-emitting semiconductor package structure that avoids the increased process complexity and manufacturing cost of conventional mold release processes. Another aspect of the present invention is to provide a light-emitting semiconductor device 6 M324287 package structure to improve the traditional package structure, the gloss powder colloid can not accurately match the shape of the light-emitting semiconductor component, resulting in poor light extraction efficiency and uneven chromaticity. And the problem of uneven brightness.

根據本新型,提出一種發光半導體元件封裝結構,包 含-基底、-螢光粉膠體固定結構、—發光半導體元件及 一螢光粉膠體包覆層。其中,發光半導體元件設置於基底 之上螢光粉膠體固定結構則係環繞且/或覆蓋發光半導體 元件而設置於基底之上。此設置於基底上之螢光粉膠體固 定結構係為高透光性材質所形成,為中空且上端具有一開 口’開口係適用於螢缝膠體的充填。此螢錄膠體固: 結構之形狀可視實際需要來加以成型,可為圓桶狀、巨蛋 狀(dome)、中空之立方體或其他適用之形狀。形成榮光粉 膠體較結構之高透光性材質可為玻璃、石英、有機樹 脂、梦膠模(mold)或其他具透光性之材料。__由螢光粉與 膠體混合而成之螢光粉膠體可經由螢光粉膠體固定結構 之開口充填於螢光粉膠體固定結構内,包覆發光半導體元 件而形成螢光粉膠體包覆|。螢光粉膠體包覆層的尺寸及 形狀係依照螢光粉膠體固定結構之設計來加以控制,可以 使螢光卷與發光半導體元件間有適當的距離。因此,應用 本新型之發光半導體元件封裝結構可具有下列優點: 1. 可精达、控制螢光粉膠體包覆層的形狀及尺寸,縮短 螢光粉與發光半導體元件間的距離,產生均句的色溫並提 昇發光效率。 2. 預先成型之螢光粉膠體固定結構本身即為高透光 7 M324287 性,因此於螢光粉膠體填充固化後不需脫模,可降低製程 複雜度及製造成本。 3·可應用於多次填充系統中,不但可配合現有封裝生 產技術的需求,還可避免螢光粉膠體與發光半導體元件之 間產生間隙,以增加光取出效率。 【實施方式】 請參照第1圖,係繪示本新型之一種發光半導體元件 封裝結構的截面圖。發光半導體元件封裝結構包含一基底 110、一發光半導體元件120、一螢光粉膠體固定結構130 及一螢光粉膠體包覆層140。 發光半導體元件120及螢光粉膠體固定結構13〇設置 於基底110之上;其中’螢光粉膠體固定結構13〇之上具 有一開口並環繞發光半導體元件120;螢光粉膠體包覆層 140經由螢光粉膠體固定結構之開口充填於螢光粉膠體固 定結構130内以包覆發光半導體元件12〇。 參照第2圖,係繪示依照本新型之實施例的一種螢光 私膠體固疋結構之立體圖及垂直截面圖。螢光粉膠體固定 結構13 0的材質為一高透光性材料,例如玻璃、石英、有 機樹脂、矽膠膜或其他適用之高透光性材料,高透光性之 樹脂至少包含環氧樹脂(Epoxy)、聚苯乙烯(P〇lystyrene; PS)、丙烯晴-丁二烯·苯乙烯聚合物 (Acrylonitfile-Butadene-Styrene; ABS)、聚曱基丙烯酸曱酯 (Polymethyl methacrylate; PMMA)、壓克力(Acrylic resin) M324287 或石夕膠(Silicone)。 此外螢光泰膠體固定結構13〇的材質可與勞光粉膠 體包覆層為相同或不同之材料。根據本新型—實施例,此 螢光粉膠體固定結構130為上具有-開口之中空狀結構, 並/、有Hf曰1 13卜此内部空間131可依產品規格需 求作設計,其可為各種形狀,如圓形、巨蛋形、矩形、橢 圓形、錐形或多邊形…等,以實際配合不同外型、數量或 光線強度之發光半導體元件的封裝製程。 參照第3〜第5圖,係缘示依照本新型之實施例的一 系列發光半導體元件封裝結構的截面圖。預先成型之螢光 粉膠體固定結構130附著於一基底11〇上。基底11〇之材 質可為具導電性或無導電性之高導熱性材料,包含金屬材 料,例如銀、銅、銅合金、鋼銀合金 ' 铭、銘合金或具有 金或銀鍍層的金屬材料;或陶瓷材料,例如氧化鋁、氮化 鋁及鑽石鍍膜,或複合材料,例如奈米碳管。除此之外, 尚可選擇於此基底110表面電鍍一高反射率材料作為反射 器,此高反射率材料可包含銀、金或其組成之族群。 參照第4圖所示,一發光半導體元件12〇置於此預先 成型之螢光粉膠體固定結構丨3〇中,發光半導體元件】2〇 可利用一傳統固晶製程固定於基底110上,預先成型之螢 光粉膠體固定結構130實質包圍於此發光半導體元件12〇 周圍。依照本新型之實施例,此發光半導體元件12〇之正 負電極可皆在此發光半導體元件12〇的上表面或上下表 面’金屬線161將發光半導體元件120之正負電極與電能 9 M324287 輸入電極Hi連結起來,外部電源藉由電能輸入電極171, 將電能經由金屬線161導入發光半導體元件12〇。 參照步驟240及第5圖所示,一螢光粉膠體填充於螢 光粉膠體固定結構130内。此螢光粉膠體可為螢光粉與有 機樹脂或螢光粉與矽膠之混合物,螢光粉為含有可被發光 半導體元件激發而發光之材質,此螢光粉材質可被發光半 導體元件激發而發出紅色、黃色、綠色、藍光等可見光。 依照本新型之較佳實施例,可利用一多次填充系統15〇將 此螢光粉膠體經由螢光粉膠體固定結構13〇之開口注入螢 光粕膠體固定結構13〇中,固化後即形成一螢光粉膠體包 覆層140。注入之螢光粉膠體可依需要調整不同黏度及體 積以達到疋全包覆發光半導體元件120及避免間隙產生 的目的。 由上述本新型實施例可知,本新型實施例之發光半導 體兀件係於基底上設有發光半導體元件及一予員先成型之 勞光粉膠體固定結構,此螢光粉膠體固定結構設於基底之 上賴發光半導體㈣,—螢光粉膠體填充於此螢光粉膠 體固定結構内,形成—螢光粉膠體包覆層。 應用本新型之發光半導體元件封裝結構具有下列優 •首先本新型之發光半導體元件封裝結構係利用一預 成型之螢光粉膠體固定結構來精密控制螢光粉膠體包 雜二对大及尺寸,榮光粉膠體固定結構可控制螢光粉膠 放匕旻層的形狀及厚度’藉以縮短螢光粉與發光半導體元 1的距離’產生均勾的色溫並有效提昇發光效率,可用 M324287 以改。傳統發光半導體元件封裝結構中螢光粉膠體沈殿 在發光半導體元件邊緣,而導致通過營光粉膠體包覆層頂 面與侧面的光線路徑長短不一所造成之色溫不均的問題。 再者,本新型之發光半導體元件封裝結構係利用高透 光性材質製成·螢光粉膠_定結構,錢定於基底上, 由於此螢光粉膠體固定結構本身即為高透光性,因此於勞 光粉膠體填充固化後不需脫模處理,可降低傳統脫模製程 之製程複雜度及製造成本。最後,本新型之發光半導體元 f封裝結構可顧於多次填充系統中,不但可配合現有封 裝生產技術的需求,還可藉由控制螢光粉膠體之形狀與大 1、,以增進發光半導體元件之光取出效率、色度均句性及 亮度均勻性。 —雖然本新型已以一實施例揭露如上,然其並非用以限 ^本新里’任何熟習此技藝者’在不脫離本新型之精神和 摩巳圍内,當可作各種之更動與潤飾,因此本新型之保護範 圍當視後附之申請專利範圍所界定者為準。 巳 【圖式簡單說明】 ^為讓本新型之上述和其他目的、特徵、優點與實施例 能更明顯易懂,所附圖式之詳細說明如下·· 第1圖係繪示依照本新型之實施例的一種發光半 元件封裝結構的截面圖。 - 第2圖係繪示依照本新型之實施例的一種螢光粉膠體 11 M324287 固定結構之立體圖及垂直截面圖。 第3圖到第5圖係繪示依照本新型之較佳實施例的一 系列發光半導體元件封裝結構的截面圖。 【主要元件符號說明】 110 :基底 120 ··發光半導體元件According to the present invention, a light emitting semiconductor device package structure comprising a substrate, a phosphor powder colloidal fixing structure, a light emitting semiconductor device, and a phosphor powder coating layer is provided. Wherein, the luminescent semiconductor component is disposed on the substrate, and the fluoropolymer colloidal structure is disposed on the substrate so as to surround and/or cover the luminescent semiconductor component. The phosphor powder fixing structure disposed on the substrate is formed of a high light transmissive material, and is hollow and has an opening at the upper end. The opening is suitable for filling the fluoroelphite. This fluorocolloid solid: The shape of the structure can be shaped according to actual needs, and can be a barrel, a dome, a hollow cube or other suitable shape. Forming glory powder Colloids are made of glass, quartz, organic resin, mold or other light transmissive materials. __The phosphor powder colloid which is mixed with the phosphor powder and the colloid can be filled in the phosphor powder colloid fixing structure through the opening of the phosphor powder colloid fixing structure, and the light emitting semiconductor component is coated to form the phosphor powder colloid coating| . The size and shape of the phosphor powder coating are controlled in accordance with the design of the phosphor powder fixing structure to provide an appropriate distance between the phosphor roll and the light emitting semiconductor element. Therefore, the light-emitting semiconductor device package structure of the present invention can have the following advantages: 1. The shape and size of the phosphor powder coating layer can be refined and controlled, and the distance between the phosphor powder and the light-emitting semiconductor component can be shortened, resulting in a uniform sentence. The color temperature and the luminous efficiency. 2. The pre-formed phosphor powder colloidal structure itself is highly transparent 7 M324287. Therefore, it does not need to be demolded after the phosphor powder colloid is filled and cured, which can reduce the process complexity and manufacturing cost. 3. It can be applied to multiple filling systems, which can not only meet the needs of existing packaging production technology, but also avoid gaps between phosphor powder colloid and light-emitting semiconductor components to increase light extraction efficiency. [Embodiment] Referring to Fig. 1, there is shown a cross-sectional view showing a package structure of a light-emitting semiconductor device of the present invention. The light emitting semiconductor device package structure comprises a substrate 110, a light emitting semiconductor device 120, a phosphor powder fixing structure 130 and a phosphor powder coating layer 140. The light emitting semiconductor device 120 and the phosphor powder fixing structure 13 are disposed on the substrate 110; wherein the phosphor powder colloid 13 13 has an opening and surrounds the light emitting semiconductor device 120; the phosphor powder coating 140 The phosphor powder colloid fixing structure 130 is filled in the opening of the phosphor powder fixing structure 130 to cover the light emitting semiconductor element 12A. Referring to Fig. 2, there is shown a perspective view and a vertical cross-sectional view of a fluorescent private colloidal solid structure according to an embodiment of the present invention. The material of the phosphor powder fixing structure 130 is a high light transmissive material such as glass, quartz, organic resin, silicone film or other suitable high light transmissive material, and the high light transmissive resin contains at least epoxy resin ( Epoxy), polystyrene (PS), Acrylonitfile-Butadene-Styrene (ABS), polymethyl methacrylate (PMMA), acrylic Acrylic resin M324287 or Silicone. In addition, the material of the fluorescent colloidal fixing structure 13〇 may be the same or different material as the coating of the colloidal powder colloid. According to the present invention, the phosphor powder fixing structure 130 has a hollow structure with an opening, and/or Hf曰1 13 . The internal space 131 can be designed according to product specifications, and can be various. Shapes, such as circles, giant eggs, rectangles, ellipses, cones, or polygons, etc., are packaged processes that actually match light-emitting semiconductor components of different shapes, numbers, or light intensities. Referring to Figures 3 through 5, a cross-sectional view of a series of light emitting semiconductor device package structures in accordance with an embodiment of the present invention is shown. The pre-formed phosphor colloid fixing structure 130 is attached to a substrate 11''. The material of the substrate 11〇 may be a highly thermally conductive material having conductivity or non-conductivity, and includes a metal material such as silver, copper, copper alloy, steel-silver alloy 'Ming, Ming alloy or metal material with gold or silver plating; Or ceramic materials such as alumina, aluminum nitride and diamond coatings, or composite materials such as carbon nanotubes. In addition, a high reflectivity material may be electroplated on the surface of the substrate 110 as a reflector, and the high reflectivity material may comprise a group of silver, gold or a composition thereof. Referring to FIG. 4, a light-emitting semiconductor device 12 is disposed in the pre-formed phosphor powder colloidal structure ,3〇, and the light-emitting semiconductor device can be fixed on the substrate 110 by a conventional solid crystal process. The molded phosphor powder fixing structure 130 substantially surrounds the periphery of the light emitting semiconductor element 12A. According to an embodiment of the present invention, the positive and negative electrodes of the light emitting semiconductor device 12 may be on the upper surface or the upper and lower surfaces of the light emitting semiconductor device 12'. The metal line 161 will be the positive and negative electrodes of the light emitting semiconductor device 120 and the electric energy 9 M324287 input electrode Hi. When connected, the external power source is supplied to the light-emitting semiconductor element 12 via the metal wire 161 via the power input electrode 171. Referring to steps 240 and 5, a phosphor powder colloid is filled in the phosphor colloid fixing structure 130. The phosphor powder colloid may be a mixture of a phosphor powder and an organic resin or a phosphor powder and a silicone powder. The phosphor powder is a material containing a light-emitting semiconductor element that is excited by the light-emitting semiconductor element, and the phosphor powder material is excited by the light-emitting semiconductor element. It emits visible light such as red, yellow, green, and blue light. According to a preferred embodiment of the present invention, the phosphor powder colloid can be injected into the fluorescent colloidal solid structure 13 through the opening of the phosphor powder colloid 13 by using a plurality of filling systems 15 , and formed after curing. A phosphor powder colloid coating 140. The injected phosphor powder colloid can be adjusted with different viscosities and volumes as needed to achieve the purpose of completely encapsulating the light-emitting semiconductor component 120 and avoiding gap generation. According to the embodiment of the present invention, the light-emitting semiconductor device of the present invention is provided with a light-emitting semiconductor component on the substrate and a mortar-molding structure fixed on the substrate. The phosphor powder colloid fixing structure is disposed on the substrate. The light-emitting semiconductor (4), the phosphor powder colloid is filled in the phosphor powder colloid fixing structure to form a phosphor powder colloid coating layer. The light-emitting semiconductor device package structure of the present invention has the following advantages: First, the light-emitting semiconductor device package structure of the present invention utilizes a pre-formed phosphor powder colloid fixing structure to precisely control the phosphor powder colloid inclusion two pairs of large and large size, glory The powder colloid fixing structure can control the shape and thickness of the phosphor powder release layer, so as to shorten the distance between the phosphor powder and the light-emitting semiconductor element 1 to generate a uniform color temperature and effectively improve the luminous efficiency, which can be changed by M324287. In the conventional light-emitting semiconductor device package structure, the phosphor powder colloid is at the edge of the light-emitting semiconductor element, which causes a problem of uneven color temperature caused by the length of the light path between the top surface and the side surface of the camping powder colloid coating. Furthermore, the light-emitting semiconductor device package structure of the present invention is made of a high-transmittance material, a phosphor powder, and a structure, which is fixed on a substrate, and the phosphor powder colloidal structure itself is highly transparent. Therefore, after the colloidal powder colloid is filled and solidified, no mold release treatment is required, which can reduce the process complexity and manufacturing cost of the conventional demolding process. Finally, the novel light-emitting semiconductor element f package structure can be considered in the multiple filling system, not only can meet the requirements of the existing packaging production technology, but also can improve the light-emitting semiconductor by controlling the shape and size of the fluorescent powder colloid. The light extraction efficiency, chromaticity, and brightness uniformity of the components. - Although the present invention has been disclosed as an embodiment in the above, it is not intended to limit the use of this novel by anyone who is familiar with the art, and can make various changes and retouchings without departing from the spirit of the present invention. Therefore, the scope of protection of this new type is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0009] The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood. Detailed description of the drawings is as follows. A cross-sectional view of a light emitting half-element package structure of an embodiment. - Figure 2 is a perspective view and a vertical cross-sectional view showing a fixing structure of a phosphor powder colloid 11 M324287 in accordance with an embodiment of the present invention. 3 to 5 are cross-sectional views showing a series of light emitting semiconductor device package structures in accordance with a preferred embodiment of the present invention. [Description of main component symbols] 110: Substrate 120 ··Light-emitting semiconductor components

130 :螢光粉膠體固定結構 131 :内部空間 140 ··螢光粉膠體包覆層 150:多次填充系統 161 :金屬線 171 :電能輸入電極 12130 : Fluorescent powder colloid fixing structure 131 : Internal space 140 · · Fluorescent powder colloid coating 150: Multiple filling system 161 : Metal wire 171 : Power input electrode 12

Claims (1)

M324287 九、申請專利範圍: 1 ·種發光半導體元件封裝結構,該封裝結構包含: 一基底; 一發光半導體元件,固定於該基底上; ^ 螢光粉膠體固定結構,設置於該基底上並環繞該發 - 光半導體元件,該螢光粉膠體固定結構為上具有一開口之 • 中空結構;以及 • ,一榮光粉膠體包覆層,該螢光粉膠體包覆層係經由該 螢光杨膠體固定結構之開口填充於該螢光粉膠體固定結 構中’並包覆該發光半導體元件。 2·如申叫專利範圍第丨項所述之發光半導體元件封裝 結構’其中該基底之材料為一高導熱性材料。 3·如申明專利範圍第2項所述之發光半導體元件封裝 φ 、、&quot;構其中该咼導熱性材料至少包含鑽石鍍膜。 4.如申請專利職第2項所述之發光半導體元件封裝 結構,其中該高導熱性材料至少包含一金屬材料。 5·如申請專利範㈣2項所述之發光半導體元件封裝 結構’其中該高導熱性材料至少包含一陶瓷材料。 申明專利範圍帛2工貝所述之發光半導體元件封裝 13 M324287 結構,其中該高導熱性材料至少包含一複合材料。 社構7·如Λ請專利範㈣4項所述之發光半導體元件封裝 ”中“金屬材料至少包含銀、銅、銅合金、銅 金鋁、鋁合金或其組成之族群。 結構範圍第5項所述之發光半導體元件封裝 成之族群。:材料至少包含氧輪、氮化㈣其所組 9·如申請專利範圍第6 結構,其中該複合材料至少 項所述之發光半導體元件封裝 包含奈米碳管。 ίο·如申請專利範 結構,其中該基底表 圍第1項所述之發光半導體元件封裝 面上附著一高反射率材料。 另u·如申請專利範圍第10 °構,其中該高反射率材料 族群。 項所述之發光半導體元件封 至少包含銀、金或其組成之 項所述之發光半導體元件封裝 固定結構覆蓋該發光半導體元 2.如申睛專利範圍第1 σ構,其中該螢光粉膠體 件。 M324287 1項所述之發光半導體元件封裝 固定結構之㈣為高透光性材 π·如申請專利範圍第 結構,其中該螢光粉膠體 料0 二如ΓΓ利範圍第13項所述之發光半導體元件封 裝、.Ό構#中該高透光性材料至少 樹脂1膠模或其混合所組成的族群。冑有機 -槿15::請專利範圍第1項所述之發光半導體元件封裝 中該螢光粉膠體包覆層為螢光粉與有機樹脂之混 如專利丨5項所述之發光半導體元件封 一構’其中該螢光粉為含有可被發光半導體元件激發而 ,光之材質’此螢光粉材質可被發光半導體元件激發而發 紅色、黃色、綠色 '藍光等可見光。 社17·如申請專利範圍第丨項所述之發光半導體元件封裝 。構,其中該螢光粉膠體包覆層為螢光粉與矽膠模之混合 社18·如申请專利範圍第丨項所述之發光半導體元件封裝 構其中5亥螢光粉膠體固定結構之材料與螢光粉膠體包 覆層為同一材料或不同材料。 15M324287 IX. Patent application scope: 1 . A light emitting semiconductor device package structure, the package structure comprising: a substrate; a light emitting semiconductor component fixed on the substrate; ^ a phosphor powder colloid fixed structure disposed on the substrate and surrounding The luminescent phosphor component has a hollow structure with an opening; and a glare colloid coating layer An opening of the fixing structure is filled in the phosphor powder fixing structure and covers the light emitting semiconductor element. 2. The light-emitting semiconductor device package structure as claimed in claim </ RTI> wherein the material of the substrate is a highly thermally conductive material. 3. The light-emitting semiconductor device package according to claim 2, wherein the heat conductive material contains at least a diamond plating film. 4. The light emitting semiconductor device package structure of claim 2, wherein the high thermal conductivity material comprises at least one metal material. 5. The light-emitting semiconductor device package structure as claimed in claim 4, wherein the high thermal conductive material comprises at least one ceramic material. The invention discloses a light-emitting semiconductor device package 13 M324287 structure according to the patent scope, wherein the high thermal conductive material comprises at least one composite material. In the case of the light-emitting semiconductor device package described in the fourth paragraph of the patent specification (4), the metal material includes at least a group of silver, copper, copper alloy, copper-aluminum-aluminum, aluminum alloy or a composition thereof. The group of light-emitting semiconductor elements described in the fifth aspect of the structure is encapsulated. The material comprises at least an oxygen wheel, and a nitride (4) group thereof. The sixth structure of the patent application scope, wherein the at least the light-emitting semiconductor device package of the composite material comprises a carbon nanotube. Ίο· As claimed in the patent specification, the substrate is coated with a high reflectivity material on the surface of the light-emitting semiconductor device described in Item 1. Another u. as claimed in the patent range 10 °, where the high reflectivity material group. The light emitting semiconductor device package according to the invention, comprising at least the silver, gold or a component thereof, the light emitting semiconductor device package fixing structure covering the light emitting semiconductor element 2. The first sigma structure of the patent application scope, wherein the phosphor powder colloid Pieces. (4) The light-emitting semiconductor device package fixing structure according to Item 1 is a high light-transmissive material π· as in the structure of the patent application scope, wherein the phosphor powder colloid material 0 is the light-emitting semiconductor according to item 13 of the profit range. In the component package, the high light transmissive material is at least a resin 1 mold or a mixture thereof.胄Organic-槿15:: In the light-emitting semiconductor device package according to Item 1, the fluorescent powder colloid coating layer is a mixture of fluorescent powder and organic resin, such as the light-emitting semiconductor device package described in Patent Item 5. A structure in which the phosphor powder is a material containing light that can be excited by a light-emitting semiconductor element. The phosphor material can be excited by the light-emitting semiconductor element to emit visible light such as red, yellow, or green blue light. The invention relates to a light-emitting semiconductor device package according to the above-mentioned patent application. The phosphor powder colloid coating layer is a mixture of a phosphor powder and a silicone rubber mold. The light-emitting semiconductor device package structure as described in claim 5, wherein the material of the 5 fluorite powder colloid fixing structure is The phosphor powder coating is made of the same material or different materials. 15
TW096211501U 2006-02-10 2006-02-10 Light-emitting semiconductor device package structure TWM324287U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452738B (en) * 2010-11-23 2014-09-11 Advanced Optoelectronic Tech Led package and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452738B (en) * 2010-11-23 2014-09-11 Advanced Optoelectronic Tech Led package and method for manufacturing the same

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