JP2012140277A - 複合ルツボ及びその製造方法 - Google Patents
複合ルツボ及びその製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 216
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052863 mullite Inorganic materials 0.000 claims abstract description 53
- 239000000463 material Substances 0.000 claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 58
- 239000010453 quartz Substances 0.000 claims description 55
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
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- 238000005266 casting Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
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- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
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- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
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- 238000001514 detection method Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 239000012467 final product Substances 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
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- 238000001175 rotational moulding Methods 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T117/10—Apparatus
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Abstract
【解決手段】複合ルツボ10は、石英ガラスルツボ本体11と、ルツボの上端部に設けられた補強層14を備え、補強層14は、アルミナとシリカを主成分とするムライト質な材料で構成されている。石英ガラスルツボ本体11は、ルツボの外表面側に形成された不透明石英ガラス層12と、ルツボの内表面側に形成された透明石英ガラス層13とを備えており、不透明石英ガラス層12と補強層14はルツボの外層を構成しており、透明石英ガラス層13はルツボの内層を構成している。
【選択図】図1
Description
複合ルツボのサンプルA1を用意した。ルツボのサイズは、直径16インチ(口径約400mm)、高さ250mm、肉厚は直銅部で6.5mm、湾曲部で8mmm、底部で5mmとした。側壁部の透明石英ガラス層の厚さは0.5mmとし、側壁部の不透明石英ガラス層の厚さは6mmとした。さらに、ルツボの上端部にはムライト質な補強層を設けた。側壁部の高さH2は150mmであり、補強層の高さH1は約15mm(H1≒0.1H2)であった。
補強層の高さH1が約50mm(H1=0.3H2)である点以外は同一構造を有する複合ルツボのサンプルA2を用意し、実施例1と同様の加熱試験を行った。その結果、表1に示すように、肉眼で観察できる内倒れ、座屈等の変形は生じなかった。また側壁部の割れもなかった。
補強層の高さH1が約75mm(H1=0.5H2)である点以外は同一構造を有する複合ルツボのサンプルA3を用意し、実施例1と同様の加熱試験を行った。その結果、表1に示すように、肉眼で観察できる内倒れ、座屈等の変形は生じなかった。また側壁部の割れもなかった。
補強層の高さH1が約100mm(H1≒0.7H2)であり、さらに補強層と石英ガラス外層との間に25mmの緩衝層を有する点以外は同一構造を有する複合ルツボのサンプルA4を用意し、実施例1と同様の加熱試験を行った。その結果、表1に示すように、肉眼で観察できる内倒れ、座屈等の変形は生じなかった。
内層が透明石英ガラス層、外層が不透明石英ガラス層で構成された一般的な石英ガラスルツボのサンプルB1を用意した。ルツボのサイズは、直径16インチ(口径約400mm)、高さ250mm、肉厚は直銅部で6.5mm、湾曲部で8mmm、底部で5mmであった。側壁部の透明石英ガラス層の厚さは0.5mmとし、側壁部の不透明石英ガラス層の厚さは6mmとした。次に、実施例1と同様の加熱試験を行った。その結果を表1に示す。
補強層の高さH1が約10mm(H1≒0.07H2)である点以外は同一構造を有する複合ルツボのサンプルB2を用意し、実施例1と同様の加熱試験を行った。その結果、表1に示すように、側壁部が部分的に内倒れし、また座屈も生じていた。
補強層の高さH1が約100mm(H1≒0.7H2)である点以外は同一構造を有する複合ルツボのサンプルB3を用意し、実施例1と同様の加熱試験を行った。その結果、表1に示すように、側壁部の内表面に多くの割れが生じていた。
11 石英ガラスルツボ本体
11A 側壁部
11B 底部
11C 湾曲部
12 不透明石英ガラス層
13 透明石英ガラス層
14 補強層
15a ムライト原料粉
15b 石英粉(第2の石英粉)
15c 石英粉(第3の石英粉)
16 カーボンモールド
17 アーク電極
18 緩衝層
20 複合ルツボ
Claims (8)
- 側壁部及び底部を有する石英ガラスルツボ本体と、
前記石英ガラスルツボ本体の上端部の外表面側に設けられた補強層とを備え、
前記補強層は、アルミナとシリカを主成分とするムライト質な材料からなることを特徴とする複合ルツボ。 - 前記補強層の高さは、前記側壁部の高さの1/10以上且つ1/2以下であることを特徴とする請求項1に記載の複合ルツボ。
- 前記補強層と前記石英ガラスルツボ本体との間に設けられ、ルツボの上方から下方に向かってアルミニウム濃度が低下する濃度勾配を有する緩衝層をさらに備えることを特徴とする請求項1又は2に記載の複合ルツボ。
- 前記石英ガラスルツボ本体は、ルツボの外表面側に設けられた多数の微少な気泡を含む不透明石英ガラス層と、ルツボの内表面側に設けられた透明石英ガラス層を有することを特徴とする請求項1乃至3のいずれか一項に記載の複合ルツボ。
- 前記補強層は、ルツボの肉厚方向に対して前記不透明石英ガラス層と同じ層に設けられていることを特徴とする請求項4に記載の複合ルツボ。
- 前記補強層は、前記不透明石英ガラス層の外側であって、前記不透明石英ガラス層の外表面に接して設けられていることを特徴とする請求項4に記載の複合ルツボ。
- 側壁部及び底部を有し、シリコン融液を支持するための複合ルツボの製造方法であって、
前記複合ルツボの形状に合わせたキャビティを有するモールドを回転させながら、ルツボの上端部に対応する前記モールド内の所定の位置に第1の石英粉とアルミナ粉を混合したムライト原料粉を充填するとともに、前記ムライト粉が充填された前記上端部よりも下方の領域に第2の石英粉を充填する工程と、
前記ムライト原料粉及び前記第2の石英粉による層の内側に第3の石英粉を充填する工程と、
前記ムライト原料粉、前記第2の石英粉及び前記第3の石英粉を加熱溶融することにより、ルツボの外表面側に設けられた不透明石英ガラス層と、ルツボの内表面側に設けられた透明石英ガラス層と、ルツボの上端部の外表面側に設けられたムライト質な補強層とを形成する工程とを備えることを特徴とする複合ルツボの製造方法。 - 側壁部及び底部を有し、シリコン融液を支持するための石英ルツボ本体を形成する工程と、
アルミナとシリカを主成分とする組成物を焼結して得られるムライト質な材料からなるリング状の補強部材を形成する工程と、
前記石英ルツボ本体の上端部の外周面側に前記補強部材を接合する工程とを備えることを特徴とする複合ルツボの製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010293567A JP5574534B2 (ja) | 2010-12-28 | 2010-12-28 | 複合ルツボ |
EP11195427.7A EP2471979B1 (en) | 2010-12-28 | 2011-12-22 | Composite crucible and method of manufacturing the same |
US13/335,778 US9266763B2 (en) | 2010-12-28 | 2011-12-22 | Composite crucible and method of manufacturing the same |
CN201110445464.XA CN102534756B (zh) | 2010-12-28 | 2011-12-27 | 复合坩埚及其制造方法 |
KR1020110143300A KR101440804B1 (ko) | 2010-12-28 | 2011-12-27 | 복합 도가니 및 그 제조 방법 |
TW100149385A TWI452020B (zh) | 2010-12-28 | 2011-12-28 | 複合坩堝及其製造方法 |
US14/979,431 US9527763B2 (en) | 2010-12-28 | 2015-12-27 | Method of manufacturing composite crucible |
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JP2010293567A JP5574534B2 (ja) | 2010-12-28 | 2010-12-28 | 複合ルツボ |
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JP2018043897A (ja) * | 2016-09-13 | 2018-03-22 | クアーズテック株式会社 | 石英ガラスルツボ及びその製造方法 |
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CN105849321B (zh) * | 2013-12-28 | 2019-04-12 | 胜高股份有限公司 | 石英玻璃坩埚及其应变测定装置 |
JP6088666B2 (ja) * | 2013-12-28 | 2017-03-01 | 株式会社Sumco | 石英ガラスルツボ及びその製造方法 |
JP6251596B2 (ja) * | 2014-02-27 | 2017-12-20 | オルガノ株式会社 | 水処理装置および水処理方法 |
CN104846339B (zh) * | 2015-06-11 | 2017-03-15 | 合肥鑫晟光电科技有限公司 | 一种真空蒸镀设备 |
DE112017004599B4 (de) | 2016-09-13 | 2022-11-03 | Sumco Corporation | Quarzglastiegel und Verfahren zu dessen Herstellung |
CN108660506A (zh) * | 2017-03-31 | 2018-10-16 | 上海新昇半导体科技有限公司 | 一种坩埚及制造方法 |
EP3718758A4 (en) * | 2017-11-27 | 2021-07-28 | Nitto Denko Corporation | REINFORCED STRUCTURE AND PROCESS FOR THE PRODUCTION OF A REINFORCED STRUCTURE |
CN109537059B (zh) * | 2018-12-25 | 2023-11-24 | 内蒙古晶环电子材料有限公司 | 一种用于蓝宝石晶体生长的坩埚结构 |
JP7341017B2 (ja) * | 2019-09-30 | 2023-09-08 | 信越石英株式会社 | 熱反射部材及び熱反射層付きガラス部材の製造方法 |
KR102405558B1 (ko) * | 2022-03-16 | 2022-06-07 | (주)성화테크 | 2차 전지 소재 소성용 도가니 및 그의 제조 방법 |
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US9266763B2 (en) | 2016-02-23 |
EP2471979A2 (en) | 2012-07-04 |
KR20120075413A (ko) | 2012-07-06 |
US9527763B2 (en) | 2016-12-27 |
EP2471979B1 (en) | 2014-07-23 |
CN102534756B (zh) | 2015-01-21 |
TW201231415A (en) | 2012-08-01 |
KR101440804B1 (ko) | 2014-09-18 |
US20120160158A1 (en) | 2012-06-28 |
EP2471979A3 (en) | 2012-08-15 |
US20160115625A1 (en) | 2016-04-28 |
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