JP6088666B2 - 石英ガラスルツボ及びその製造方法 - Google Patents
石英ガラスルツボ及びその製造方法 Download PDFInfo
- Publication number
- JP6088666B2 JP6088666B2 JP2015554978A JP2015554978A JP6088666B2 JP 6088666 B2 JP6088666 B2 JP 6088666B2 JP 2015554978 A JP2015554978 A JP 2015554978A JP 2015554978 A JP2015554978 A JP 2015554978A JP 6088666 B2 JP6088666 B2 JP 6088666B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- quartz glass
- straight body
- glass crucible
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 101
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010453 quartz Substances 0.000 claims description 37
- 239000000843 powder Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 8
- 230000000737 periodic effect Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000007872 degassing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 description 33
- 239000010703 silicon Substances 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 239000013078 crystal Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 11
- 238000004088 simulation Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011044 quartzite Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Description
10a 直胴部
10b 底部
10c コーナー部
10d 開口部
11 不透明層
12 透明層
20 石英粉
21 グラファイトモールド
22 アーク電極
23 通気孔
32 口径
H 肉厚
T 周期
ta 最大厚
tb 最小厚
Claims (7)
- 円筒状の直胴部と、前記直胴部の下端に形成されたコーナー部と、前記コーナー部を介して前記直胴部に接続された底部とを有する石英ガラスルツボであって、
ルツボの外層を構成する気泡を内包する不透明層と、ルツボの内層を構成する気泡が除去された透明層とを備え、
少なくとも前記直胴部における前記不透明層と前記透明層との境界面は、少なくとも一方向に周期的な波面を形成していることを特徴とする石英ガラスルツボ。 - 前記直胴部及び前記コーナー部における前記不透明層と前記透明層との境界面が前記波面を形成している、請求項1に記載の石英ガラスルツボ。
- 前記波面の進行方向は、前記直胴部の上下方向である、請求項1又は2に記載の石英ガラスルツボ。
- 前記波面の進行方向は、前記直胴部の周方向である、請求項1又は2に記載の石英ガラスルツボ。
- 前記波面の進行方向は、前記直胴部の上下方向と周方向の両方の合成である、請求項1又は2に記載の石英ガラスルツボ。
- 前記波面の変化の周期は20mm以上100mm以下である、請求項1乃至5のいずれか一項に記載の石英ガラスルツボ。
- 上端に開口部を有する円筒状の直胴部と、前記直胴部の下端に形成されたコーナー部と、前記コーナー部を介して前記直胴部に接続された底部とを有する石英ガラスルツボの製造方法であって、
前記石英ガラスルツボの外形に合わせた形状を有するモールドを回転させながらその内表面に石英粉を堆積させる工程と、
前記石英粉をアーク溶融によりガラス化して石英ガラスルツボを形成する工程とを備え、
前記石英粉をアーク溶融する工程では、前記モールドに設けられた通気孔を通じて脱気する際の吸引力を一方向に沿って周期的に異ならせて、少なくとも前記直胴部における前記不透明層と前記透明層との境界面を前記一方向に周期的な波面として形成することを特徴とする石英ガラスルツボの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013273684 | 2013-12-28 | ||
JP2013273684 | 2013-12-28 | ||
PCT/JP2014/084216 WO2015099000A1 (ja) | 2013-12-28 | 2014-12-25 | 石英ガラスルツボ及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017018186A Division JP2017081822A (ja) | 2013-12-28 | 2017-02-03 | 石英ガラスルツボ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6088666B2 true JP6088666B2 (ja) | 2017-03-01 |
JPWO2015099000A1 JPWO2015099000A1 (ja) | 2017-03-23 |
Family
ID=53478847
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015554978A Active JP6088666B2 (ja) | 2013-12-28 | 2014-12-25 | 石英ガラスルツボ及びその製造方法 |
JP2017018186A Withdrawn JP2017081822A (ja) | 2013-12-28 | 2017-02-03 | 石英ガラスルツボ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017018186A Withdrawn JP2017081822A (ja) | 2013-12-28 | 2017-02-03 | 石英ガラスルツボ |
Country Status (7)
Country | Link |
---|---|
US (1) | US9863061B2 (ja) |
EP (1) | EP3088572B1 (ja) |
JP (2) | JP6088666B2 (ja) |
KR (1) | KR101771599B1 (ja) |
CN (1) | CN105849320B (ja) |
TW (1) | TWI548600B (ja) |
WO (1) | WO2015099000A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105953583B (zh) * | 2016-07-06 | 2018-05-22 | 上海华培动力科技股份有限公司 | 一种高温合金特种铸造用曲面坩埚及其制备方法 |
JP7141844B2 (ja) * | 2018-04-06 | 2022-09-26 | 信越石英株式会社 | 石英ガラスるつぼの製造方法 |
CN109467306B (zh) * | 2018-11-08 | 2021-10-19 | 锦州佑鑫石英科技有限公司 | 单晶硅生产用高强度石英坩埚的加工方法 |
JP7157932B2 (ja) * | 2019-01-11 | 2022-10-21 | 株式会社Sumco | シリカガラスルツボの製造装置および製造方法 |
CN114347218A (zh) * | 2021-12-28 | 2022-04-15 | 宁夏盾源聚芯半导体科技股份有限公司 | 提高直拉单晶硅棒尾部氧含量的石英坩埚的制备装置及方法和石英坩埚 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003517990A (ja) * | 1999-12-22 | 2003-06-03 | 信越石英株式会社 | 石英ガラスるつぼ及びその製造方法 |
JP2007070221A (ja) * | 2005-09-08 | 2007-03-22 | Heraeus Shin-Etsu America Inc | 無気泡及び減少した気泡成長壁を備えたシリカガラスるつぼ |
WO2009069773A1 (ja) * | 2007-11-30 | 2009-06-04 | Japan Super Quartz Corporation | 石英ガラスルツボの製造方法および製造装置 |
JP2013139352A (ja) * | 2011-12-29 | 2013-07-18 | Sumco Corp | 内表面にミクロンレベルの波面のあるシリカガラスルツボ |
Family Cites Families (16)
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JP4217844B2 (ja) | 1998-06-18 | 2009-02-04 | ジャパンスーパークォーツ株式会社 | 複合ルツボとその製造方法および再生方法 |
JP3621282B2 (ja) | 1999-02-25 | 2005-02-16 | 東芝セラミックス株式会社 | 石英ガラスルツボおよびその製造方法 |
JP4994568B2 (ja) | 2003-12-03 | 2012-08-08 | コバレントマテリアル株式会社 | シリカガラスルツボ |
TW200730672A (en) * | 2005-11-29 | 2007-08-16 | Japan Super Quartz Corp | Quartz glass crucible, method of producing the same, and application thereof |
JP4799536B2 (ja) * | 2007-12-14 | 2011-10-26 | ジャパンスーパークォーツ株式会社 | 大径のシリコン単結晶インゴット中のピンホール欠陥の低減を可能とする大径シリコン単結晶インゴット引上げ用高純度石英ガラスルツボ |
CN101970362A (zh) | 2008-02-05 | 2011-02-09 | 日本超精石英株式会社 | 石英玻璃坩埚 |
TWI378158B (en) * | 2008-02-29 | 2012-12-01 | Japan Super Quartz Corp | Quartz crucible used for pulling single crystalline silicon and method of fabricating the quartz crucible |
JP4879220B2 (ja) * | 2008-05-28 | 2012-02-22 | ジャパンスーパークォーツ株式会社 | 石英ガラスルツボとその製造方法 |
JP4987029B2 (ja) * | 2009-04-02 | 2012-07-25 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
JP5022519B2 (ja) * | 2009-09-10 | 2012-09-12 | ジャパンスーパークォーツ株式会社 | シリコン単結晶引き上げ用石英ガラスルツボ |
EP2410081B1 (en) * | 2009-12-14 | 2014-11-19 | Japan Super Quartz Corporation | Method for manufacturing a silica glass crucible |
JP5618409B2 (ja) * | 2010-12-01 | 2014-11-05 | 株式会社Sumco | シリカガラスルツボ |
JP2012017239A (ja) * | 2010-12-22 | 2012-01-26 | Covalent Materials Corp | ルツボ構造 |
JP2012017242A (ja) * | 2010-12-27 | 2012-01-26 | Covalent Materials Corp | 石英ガラスルツボ及びルツボ構造 |
JP5574534B2 (ja) * | 2010-12-28 | 2014-08-20 | 株式会社Sumco | 複合ルツボ |
US20120272687A1 (en) * | 2011-04-27 | 2012-11-01 | Japan Super Quartz Corporation | Apparatus for manufacturing vitreous silica crucible |
-
2014
- 2014-12-25 EP EP14873978.2A patent/EP3088572B1/en active Active
- 2014-12-25 WO PCT/JP2014/084216 patent/WO2015099000A1/ja active Application Filing
- 2014-12-25 JP JP2015554978A patent/JP6088666B2/ja active Active
- 2014-12-25 CN CN201480071168.XA patent/CN105849320B/zh active Active
- 2014-12-25 US US15/103,639 patent/US9863061B2/en active Active
- 2014-12-25 KR KR1020167017299A patent/KR101771599B1/ko active IP Right Grant
- 2014-12-29 TW TW103146148A patent/TWI548600B/zh active
-
2017
- 2017-02-03 JP JP2017018186A patent/JP2017081822A/ja not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003517990A (ja) * | 1999-12-22 | 2003-06-03 | 信越石英株式会社 | 石英ガラスるつぼ及びその製造方法 |
JP2007070221A (ja) * | 2005-09-08 | 2007-03-22 | Heraeus Shin-Etsu America Inc | 無気泡及び減少した気泡成長壁を備えたシリカガラスるつぼ |
WO2009069773A1 (ja) * | 2007-11-30 | 2009-06-04 | Japan Super Quartz Corporation | 石英ガラスルツボの製造方法および製造装置 |
JP2013139352A (ja) * | 2011-12-29 | 2013-07-18 | Sumco Corp | 内表面にミクロンレベルの波面のあるシリカガラスルツボ |
Also Published As
Publication number | Publication date |
---|---|
TWI548600B (zh) | 2016-09-11 |
EP3088572B1 (en) | 2019-05-15 |
WO2015099000A1 (ja) | 2015-07-02 |
EP3088572A4 (en) | 2017-07-26 |
JP2017081822A (ja) | 2017-05-18 |
TW201536698A (zh) | 2015-10-01 |
JPWO2015099000A1 (ja) | 2017-03-23 |
KR20160091990A (ko) | 2016-08-03 |
KR101771599B1 (ko) | 2017-08-25 |
CN105849320B (zh) | 2018-07-06 |
US20160289862A1 (en) | 2016-10-06 |
CN105849320A (zh) | 2016-08-10 |
EP3088572A1 (en) | 2016-11-02 |
US9863061B2 (en) | 2018-01-09 |
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