JP2012134515A5 - - Google Patents
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- Publication number
- JP2012134515A5 JP2012134515A5 JP2012022627A JP2012022627A JP2012134515A5 JP 2012134515 A5 JP2012134515 A5 JP 2012134515A5 JP 2012022627 A JP2012022627 A JP 2012022627A JP 2012022627 A JP2012022627 A JP 2012022627A JP 2012134515 A5 JP2012134515 A5 JP 2012134515A5
- Authority
- JP
- Japan
- Prior art keywords
- aln substrate
- polarity
- aln
- polishing
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005498 polishing Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 239000002002 slurry Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33186801P | 2001-11-20 | 2001-11-20 | |
| US60/331,868 | 2001-11-20 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Division JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012134515A JP2012134515A (ja) | 2012-07-12 |
| JP2012134515A5 true JP2012134515A5 (enExample) | 2014-05-22 |
| JP5628224B2 JP5628224B2 (ja) | 2014-11-19 |
Family
ID=23295726
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Pending JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
| JP2012022627A Expired - Lifetime JP5628224B2 (ja) | 2001-11-20 | 2012-02-06 | 基板表面を研磨するための方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Pending JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7037838B2 (enExample) |
| EP (1) | EP1446263B1 (enExample) |
| JP (2) | JP2005510072A (enExample) |
| AT (1) | ATE418420T1 (enExample) |
| AU (1) | AU2002365979A1 (enExample) |
| CA (1) | CA2467806C (enExample) |
| DE (1) | DE60230538D1 (enExample) |
| WO (1) | WO2003043780A2 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| US8025808B2 (en) * | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
| JP4752214B2 (ja) * | 2004-08-20 | 2011-08-17 | 住友電気工業株式会社 | エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 |
| JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| EP1885918B1 (en) * | 2005-05-11 | 2017-01-25 | North Carolina State University | Methods of preparing controlled polarity group iii-nitride films |
| US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
| US7670902B2 (en) * | 2005-07-26 | 2010-03-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for landing polysilicon contact |
| RU2320466C2 (ru) * | 2005-11-23 | 2008-03-27 | Ооо "Нитридные Кристаллы" | Способ полирования поверхности подложки |
| EP1960570A2 (en) | 2005-11-28 | 2008-08-27 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
| WO2007065018A2 (en) * | 2005-12-02 | 2007-06-07 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| WO2007123735A1 (en) | 2006-03-30 | 2007-11-01 | Crystal Is, Inc. | Methods for controllable doping of aluminum nitride bulk crystals |
| US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| WO2008060505A1 (en) * | 2006-11-15 | 2008-05-22 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
| EP2121244B1 (en) * | 2006-12-20 | 2013-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining inorganic, non-metallic workpieces |
| WO2008088838A1 (en) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US9028612B2 (en) | 2010-06-30 | 2015-05-12 | Crystal Is, Inc. | Growth of large aluminum nitride single crystals with thermal-gradient control |
| WO2008094464A2 (en) * | 2007-01-26 | 2008-08-07 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| US8210904B2 (en) * | 2008-04-29 | 2012-07-03 | International Business Machines Corporation | Slurryless mechanical planarization for substrate reclamation |
| US7915178B2 (en) | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
| US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
| EP2595940B1 (en) | 2010-07-20 | 2019-11-13 | Hexatech Inc. | Polycrystalline aluminum nitride boule and method of production of a polycrystalline aluminum nitride material |
| US9299594B2 (en) | 2010-07-27 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate bonding system and method of modifying the same |
| JP5319628B2 (ja) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
| JP2011049610A (ja) * | 2010-12-10 | 2011-03-10 | Sumitomo Electric Ind Ltd | ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス |
| JP2014507363A (ja) | 2010-12-14 | 2014-03-27 | ヘクサテック，インコーポレイテッド | 多結晶質窒化アルミニウム焼結体の熱膨張処理、および半導体製造へのその応用 |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| WO2014151264A1 (en) | 2013-03-15 | 2014-09-25 | Crystal Is, Inc. | Planar contacts to pseudomorphic electronic and optoelectronic devices |
| WO2016039116A1 (ja) * | 2014-09-11 | 2016-03-17 | 株式会社トクヤマ | 窒化アルミニウム単結晶基板の洗浄方法および積層体 |
| JP6361747B2 (ja) | 2015-02-02 | 2018-07-25 | 富士電機株式会社 | 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置 |
| US10249786B2 (en) * | 2016-11-29 | 2019-04-02 | Palo Alto Research Center Incorporated | Thin film and substrate-removed group III-nitride based devices and method |
| DE112018005414T5 (de) | 2017-11-10 | 2020-07-09 | Crystal Is, Inc. | Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung |
| CN114667371B (zh) | 2019-08-15 | 2025-05-13 | 晶化成半导体公司 | 氮化铝晶体的扩径 |
| JP2021104547A (ja) * | 2019-12-26 | 2021-07-26 | ニッタ・デュポン株式会社 | 研磨スラリー |
| JP7709517B2 (ja) * | 2020-07-29 | 2025-07-16 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 銅及びスルーシリコンビア（ｔｓｖ）化学機械平坦化（ｃｍｐ）のためのパッドインボトル（ｐｉｂ）技術 |
| WO2023277103A1 (ja) * | 2021-06-30 | 2023-01-05 | 京セラ株式会社 | 周期表第１３族元素窒化物結晶基板の製造方法 |
| US20240352279A1 (en) * | 2021-07-23 | 2024-10-24 | Versum Materials Us, Llc | Pad-in-a-bottle (pib) technology for copper barrier slurries |
| WO2023086783A1 (en) * | 2021-11-10 | 2023-05-19 | Versum Materials Us, Llc | Pad-ln-a-bottle chemical mechanical planarization polishing with cost-effective non-porous solid polishing pads |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3629023A (en) | 1968-07-17 | 1971-12-21 | Minnesota Mining & Mfg | METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM |
| JPH04355920A (ja) * | 1991-01-31 | 1992-12-09 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板およびその製造方法 |
| JP2986948B2 (ja) * | 1991-04-15 | 1999-12-06 | 株式会社東芝 | ＡｌＮ回路基板 |
| JP3585941B2 (ja) * | 1993-06-14 | 2004-11-10 | イビデン株式会社 | セラミックス基板の表面処理方法 |
| EP0684106B1 (en) * | 1994-05-23 | 2000-04-05 | Sumitomo Electric Industries, Ltd. | Method to produce a hard material coated wafer |
| US5597443A (en) * | 1994-08-31 | 1997-01-28 | Texas Instruments Incorporated | Method and system for chemical mechanical polishing of semiconductor wafer |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5534462A (en) * | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
| US5652176A (en) * | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
| US5645682A (en) * | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
| US5962343A (en) | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
| JP3450683B2 (ja) * | 1997-01-10 | 2003-09-29 | 株式会社東芝 | 半導体被処理面の調製方法 |
| TW426556B (en) * | 1997-01-24 | 2001-03-21 | United Microelectronics Corp | Method of cleaning slurry remnants left on a chemical-mechanical polish machine |
| US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
| US6379223B1 (en) | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| WO2001058644A1 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
| EP1129816A3 (en) * | 2000-03-02 | 2003-01-15 | Corning Incorporated | Method for polishing ceramics |
| US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
| JP3787485B2 (ja) * | 2000-06-30 | 2006-06-21 | 信越半導体株式会社 | 薄板の加工方法 |
-
2002
- 2002-11-20 EP EP02803675A patent/EP1446263B1/en not_active Expired - Lifetime
- 2002-11-20 WO PCT/US2002/037135 patent/WO2003043780A2/en not_active Ceased
- 2002-11-20 DE DE60230538T patent/DE60230538D1/de not_active Expired - Lifetime
- 2002-11-20 JP JP2003545445A patent/JP2005510072A/ja active Pending
- 2002-11-20 AU AU2002365979A patent/AU2002365979A1/en not_active Abandoned
- 2002-11-20 AT AT02803675T patent/ATE418420T1/de not_active IP Right Cessation
- 2002-11-20 CA CA2467806A patent/CA2467806C/en not_active Expired - Lifetime
- 2002-11-20 US US10/300,481 patent/US7037838B2/en not_active Expired - Lifetime
-
2006
- 2006-02-28 US US11/363,816 patent/US7323414B2/en not_active Expired - Lifetime
-
2012
- 2012-02-06 JP JP2012022627A patent/JP5628224B2/ja not_active Expired - Lifetime
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