JP2012134515A5 - - Google Patents
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- Publication number
- JP2012134515A5 JP2012134515A5 JP2012022627A JP2012022627A JP2012134515A5 JP 2012134515 A5 JP2012134515 A5 JP 2012134515A5 JP 2012022627 A JP2012022627 A JP 2012022627A JP 2012022627 A JP2012022627 A JP 2012022627A JP 2012134515 A5 JP2012134515 A5 JP 2012134515A5
- Authority
- JP
- Japan
- Prior art keywords
- aln substrate
- polarity
- aln
- polishing
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 238000005498 polishing Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 239000002002 slurry Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims 4
- 235000012431 wafers Nutrition 0.000 description 13
- 239000013078 crystal Substances 0.000 description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33186801P | 2001-11-20 | 2001-11-20 | |
| US60/331,868 | 2001-11-20 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Division JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012134515A JP2012134515A (ja) | 2012-07-12 |
| JP2012134515A5 true JP2012134515A5 (enExample) | 2014-05-22 |
| JP5628224B2 JP5628224B2 (ja) | 2014-11-19 |
Family
ID=23295726
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Pending JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
| JP2012022627A Expired - Lifetime JP5628224B2 (ja) | 2001-11-20 | 2012-02-06 | 基板表面を研磨するための方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003545445A Pending JP2005510072A (ja) | 2001-11-20 | 2002-11-20 | 基板表面を研磨するための方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7037838B2 (enExample) |
| EP (1) | EP1446263B1 (enExample) |
| JP (2) | JP2005510072A (enExample) |
| AT (1) | ATE418420T1 (enExample) |
| AU (1) | AU2002365979A1 (enExample) |
| CA (1) | CA2467806C (enExample) |
| DE (1) | DE60230538D1 (enExample) |
| WO (1) | WO2003043780A2 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
| US8545629B2 (en) * | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
| JP4511801B2 (ja) * | 2003-03-14 | 2010-07-28 | 株式会社リコー | Ｉｉｉ族窒化物結晶の研磨方法およびｉｉｉ族窒化物結晶および半導体デバイス |
| US8025808B2 (en) * | 2003-04-25 | 2011-09-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machine ceramics |
| JP4752214B2 (ja) * | 2004-08-20 | 2011-08-17 | 住友電気工業株式会社 | エピタキシャル層形成用ＡｌＮ結晶の表面処理方法 |
| JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| WO2006124067A1 (en) * | 2005-05-11 | 2006-11-23 | North Carolina State University | Controlled polarity group iii-nitride films and methods of preparing such films |
| US20060288929A1 (en) * | 2005-06-10 | 2006-12-28 | Crystal Is, Inc. | Polar surface preparation of nitride substrates |
| US7670902B2 (en) * | 2005-07-26 | 2010-03-02 | Semiconductor Manufacturing International (Shanghai) Corporation | Method and structure for landing polysilicon contact |
| RU2320466C2 (ru) * | 2005-11-23 | 2008-03-27 | Ооо "Нитридные Кристаллы" | Способ полирования поверхности подложки |
| JP2009517329A (ja) | 2005-11-28 | 2009-04-30 | クリスタル・イズ，インコーポレイテッド | 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法 |
| EP1954857B1 (en) | 2005-12-02 | 2018-09-26 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
| US9034103B2 (en) * | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
| US8012257B2 (en) * | 2006-03-30 | 2011-09-06 | Crystal Is, Inc. | Methods for controllable doping of aluminum nitride bulk crystals |
| WO2008060505A1 (en) * | 2006-11-15 | 2008-05-22 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
| EP2121244B1 (en) * | 2006-12-20 | 2013-07-10 | Saint-Gobain Ceramics & Plastics, Inc. | Methods for machining inorganic, non-metallic workpieces |
| US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8323406B2 (en) | 2007-01-17 | 2012-12-04 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
| US8080833B2 (en) * | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
| CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
| US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
| US8210904B2 (en) * | 2008-04-29 | 2012-07-03 | International Business Machines Corporation | Slurryless mechanical planarization for substrate reclamation |
| US7915178B2 (en) | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
| US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
| CN105951177B (zh) | 2010-06-30 | 2018-11-02 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
| WO2012012384A1 (en) | 2010-07-20 | 2012-01-26 | Hexatech, Inc. | Polycrystalline aluminum nitride material and method of production thereof |
| US9299594B2 (en) | 2010-07-27 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate bonding system and method of modifying the same |
| JP5319628B2 (ja) * | 2010-08-26 | 2013-10-16 | シャープ株式会社 | 窒化物半導体素子および半導体光学装置 |
| JP2011049610A (ja) * | 2010-12-10 | 2011-03-10 | Sumitomo Electric Ind Ltd | ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス |
| WO2012082729A1 (en) | 2010-12-14 | 2012-06-21 | Hexatech, Inc. | Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies, and application to the manufacture of semi-conductors |
| US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
| JP6275817B2 (ja) | 2013-03-15 | 2018-02-07 | クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. | 仮像電子及び光学電子装置に対する平面コンタクト |
| EP3193356B1 (en) | 2014-09-11 | 2023-12-20 | Tokuyama Corporation | Cleaning method and laminate of aluminum nitride single-crystal substrate |
| DE112015002906B4 (de) | 2015-02-02 | 2022-12-22 | Fuji Electric Co., Ltd. | Verfahren zur Herstellung einer Siliciumcarbid-Halbleitervorrichtung und Siliciumcarbid-Halbleitervorrichtung |
| US10249786B2 (en) * | 2016-11-29 | 2019-04-02 | Palo Alto Research Center Incorporated | Thin film and substrate-removed group III-nitride based devices and method |
| DE112018005414T5 (de) | 2017-11-10 | 2020-07-09 | Crystal Is, Inc. | Große, UV-Transparente Aluminiumnitrid-Einkristalle und Verfahren zu ihrer Herstellung |
| CN114667371B (zh) | 2019-08-15 | 2025-05-13 | 晶化成半导体公司 | 氮化铝晶体的扩径 |
| JP2021104547A (ja) * | 2019-12-26 | 2021-07-26 | ニッタ・デュポン株式会社 | 研磨スラリー |
| EP4189026A4 (en) * | 2020-07-29 | 2024-07-31 | Versum Materials US, LLC | BUFFER-IN-BOTTLE (PIB) TECHNOLOGY FOR CHEMICAL-MECHANICAL PLANARIZATION (CMP) OF COPPER AND THROUGH-SILICON VIA (TSV) |
| JP7650355B2 (ja) * | 2021-06-30 | 2025-03-24 | 京セラ株式会社 | 周期表第１３族元素窒化物結晶基板の製造方法 |
| WO2023004269A1 (en) * | 2021-07-23 | 2023-01-26 | Versum Materials Us, Llc | Pad-in-a-bottle (pib) technology for copper barrier slurries |
| JP2024544897A (ja) * | 2021-11-10 | 2024-12-05 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | 費用効果の高い非多孔質固体研磨パッドを用いたパッドインボトル化学機械的平坦化研磨 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3629023A (en) | 1968-07-17 | 1971-12-21 | Minnesota Mining & Mfg | METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM |
| JPH04355920A (ja) * | 1991-01-31 | 1992-12-09 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板およびその製造方法 |
| JP2986948B2 (ja) * | 1991-04-15 | 1999-12-06 | 株式会社東芝 | ＡｌＮ回路基板 |
| JP3585941B2 (ja) * | 1993-06-14 | 2004-11-10 | イビデン株式会社 | セラミックス基板の表面処理方法 |
| DE69526129T2 (de) * | 1994-05-23 | 2002-08-22 | Sumitomo Electric Industries, Ltd. | Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren |
| US5597443A (en) * | 1994-08-31 | 1997-01-28 | Texas Instruments Incorporated | Method and system for chemical mechanical polishing of semiconductor wafer |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5652176A (en) * | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
| US5534462A (en) * | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
| US5645682A (en) * | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
| US5962343A (en) | 1996-07-30 | 1999-10-05 | Nissan Chemical Industries, Ltd. | Process for producing crystalline ceric oxide particles and abrasive |
| JP3450683B2 (ja) * | 1997-01-10 | 2003-09-29 | 株式会社東芝 | 半導体被処理面の調製方法 |
| TW426556B (en) * | 1997-01-24 | 2001-03-21 | United Microelectronics Corp | Method of cleaning slurry remnants left on a chemical-mechanical polish machine |
| US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
| US6379223B1 (en) * | 1999-11-29 | 2002-04-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| WO2001058644A1 (en) * | 2000-02-10 | 2001-08-16 | Applied Materials, Inc. | Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus |
| EP1129816A3 (en) * | 2000-03-02 | 2003-01-15 | Corning Incorporated | Method for polishing ceramics |
| US6291351B1 (en) * | 2000-06-28 | 2001-09-18 | International Business Machines Corporation | Endpoint detection in chemical-mechanical polishing of cloisonne structures |
| JP3787485B2 (ja) * | 2000-06-30 | 2006-06-21 | 信越半導体株式会社 | 薄板の加工方法 |
-
2002
- 2002-11-20 CA CA2467806A patent/CA2467806C/en not_active Expired - Lifetime
- 2002-11-20 AU AU2002365979A patent/AU2002365979A1/en not_active Abandoned
- 2002-11-20 EP EP02803675A patent/EP1446263B1/en not_active Expired - Lifetime
- 2002-11-20 JP JP2003545445A patent/JP2005510072A/ja active Pending
- 2002-11-20 AT AT02803675T patent/ATE418420T1/de not_active IP Right Cessation
- 2002-11-20 DE DE60230538T patent/DE60230538D1/de not_active Expired - Lifetime
- 2002-11-20 WO PCT/US2002/037135 patent/WO2003043780A2/en not_active Ceased
- 2002-11-20 US US10/300,481 patent/US7037838B2/en not_active Expired - Lifetime
-
2006
- 2006-02-28 US US11/363,816 patent/US7323414B2/en not_active Expired - Lifetime
-
2012
- 2012-02-06 JP JP2012022627A patent/JP5628224B2/ja not_active Expired - Lifetime
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